IQBD30E120A1 ® Pb IQBD30E120A1 Pb Free Plating Product 30.0 Ampere SwitchMode Single Fast Recovery Epitaxial Diode TO-247-2L APPLICATION · · · · · · · Cathode(Bottom Side Metal Heatsink) Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS Anode PRODUCT FEATURE · Ultrafast Recovery Time Internal Configuration · Soft Recovery Characteristics Cathode Base Backside · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Current GENERAL DESCRIPTION IQBD30E120A1 using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristic. ABSOLUTE MAXIMUM RATINGS Symbol T C =25°C unless otherwise specified Parameter Test Conditions Values Unit VR Maximum D.C. Reverse Voltage 1200 V V RRM Maximum Repetitive Reverse Voltage 1200 V I F(AV) Average Forward Current 30 A I F(RMS) RMS Forward Current T C =110°C 42 A I FSM Non-Repetitive Surge Forward Current T J =45°C, t=10ms, 50Hz, Sine 300 A PD Power Dissipation 115 W TJ Junction Temperature -40 to +150 °C T STG Storage Temperature Range -40 to +150 °C Torque Module-to-Sink Recommended（M3） 1.1 N·m R θJC Thermal Resistance Junction-to-Case 1.1 °C /W 7.0 g T C =110°C Weight ELECTRICAL CHARACTERISTICS Symbol Parameter T C =25°C unless otherwise specified Test Conditions Min. Typ. Max. Unit V R =1200V -- -- 100 µA V R =1200V, T J =125°C -- -- 1 mA I F =30A -- 2.15 2.5 V I F =30A, T J =125°C -- 1.75 -- V I RM Reverse Leakage Current VF Forward Voltage t rr Reverse Recovery Time I F =1A, V R =30V, di F /dt=-200A/μs -- 30 -- ns t rr Reverse Recovery Time V R =600V, I F =30A -- 160 -- ns I RRM Max. Reverse Recovery Current di F /dt=-200A/μs, T J =25°C -- 5 -- A t rr Reverse Recovery Time V R =600V, I F =30A -- 300 -- ns I RRM Max. Reverse Recovery Current di F /dt=-200A/μs, T J =125°C -- 11 -- A Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/3 http://www.thinkisemi.com/ IQBD30E120A1 ® 60 500 VR=600V TJ =125°C 50 400 trr (ns) 40 IF (A) IF=60A TJ =125°C 30 300 200 IF=30A 20 IF=15A TJ =25°C 100 10 0 0 0 1.0 2.0 3.0 1.5 2.5 VF（V） Fig1. Forward Voltage Drop vs Forward Current 0.5 50 0 200 400 600 800 1000 diF/dt（A/μs） Fig2. Reverse Recovery Time vs diF/dt 5 VR=600V TJ =125°C VR=600V TJ =125°C 40 4 IF=60A 30 IF=30A 20 3 Qrr (μc) IRRM (A) IF=60A 2 IF=15A IF=30A 10 IF=15A 1 0 0 0 400 600 1000 800 diF/dt（A/μs） Fig3. Reverse Recovery Current vs diF/dt 200 1.4 0 200 400 600 800 1000 diF/dt（A/μs） Fig4. Reverse Recovery Charge vs diF/dt 10 1.2 1 ZthJC (K/W) 1.0 Kf 0.8 0.6 trr 0.4 IRRM 0.2 Qrr 0 0 25 100 125 150 75 TJ (°C) Fig5. Dynamic Parameters vs Junction Temperature Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. . -1 10 -2 10 50 . 10 . Duty 0.5 0.2 0.1 0.05 Single Pulse -3 10 -4 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration (seconds) Fig6. Transient Thermal Impedance Page 2/3 http://www.thinkisemi.com/ IQBD30E120A1 ® IF trr IRRM 0.25 IRRM Qrr 0.9 IRRM dIF/dt Fig7. Diode Reverse Recovery Test Circuit and Waveform D A Ejector pin hole thickness (h) L2 E2 E1 H c1 L L1 Ø A1 b1 b e c TO-247-2L DIMENSIONS DIMENSIONS IN MILLIMETERS SYMBOL DIMENSIONS IN INCHES MIN. MAX. MIN. MAX. A 4.850 5.150 0.191 0.200 A1 2.200 2.600 0.087 0.102 b 1.000 1.400 0.039 0.055 b1 1.800 2.200 0.071 0.087 c 0.500 0.700 0.020 0.028 c1 1.900 2.100 0.075 0.083 D 15.450 15.750 0.608 0.620 E1 3.500 Ref. E2 3.600 Ref. 0.138 Ref. 0.142 Ref. L 40.900 41.300 1.610 1.626 L1 24.800 25.100 0.976 0.988 L2 20.300 20.600 0.799 0.811 Ø 7.100 7.300 0.280 e 10.900 Typ. H h Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. 5.980 Typ. 0.000 0.287 0.429 Typ. 0.235 Typ. 0.300 0.000 0.012 Page 3/3 http://www.thinkisemi.com/