BYG24D thru BYG24J www.vishay.com Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Fast reverse recovery time • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AC (SMA) • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.5 A VRRM 200 V to 600 V IFSM 30 A IR 1.0 μA VF 1.25 V trr 140 ns ER 20 mJ TJ max. 150 °C MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code BYG24D BYG24G BYG24J BYG24D BYG24G BYG24J 200 400 600 UNIT Maximum repetitive peak reverse voltage VRRM Average forward current at TA = 65 °C IF(AV) 1.5 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 30 A Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, TJ = 25 °C ER 20 mJ Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C Revision: 21-Dec-11 V Document Number: 88960 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG24D thru BYG24J www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) TEST CONDITIONS PARAMETER Minimum breakdown voltage IR = 100 μA Maximum instantaneous forward voltage IF = 1 A IF = 1.5 A Maximum reverse current VR = VRRM Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A TJ = 25 °C TJ = 25 °C TJ = 100 °C SYMBOL BYG24D BYG24G BYG24J UNIT VBR 200 400 600 V 1.15 VF (1) V 1.25 1 IR µA 10 trr 140 ns Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) SYMBOL PARAMETER Junction to case Maximum thermal resistance, junction to ambient BYG24D BYG24G RJC 25 RJA (1) 150 RJA (2) 125 BYG24J UNIT °C/W °C/W Notes Mounted on epoxy-glass hard tissue 35 μm x 17 mm2 cooper area per electrode (2) Mounted on epoxy-glass hard tissue 35 μm x 50 mm2 cooper area per electrode (1) ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BYG24D-E3/TR 0.064 TR 1800 7" diameter plastic tape and reel BYG24D-E3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel BYG24DHE3/TR (1) 0.064 TR 1800 7" diameter plastic tape and reel 0.064 TR3 7500 13" diameter plastic tape and reel PREFERRED P/N (1) BYG24DHE3/TR3 Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 RθJA = 125 K/W 50 VR = VRRM VR = VRRM 155 K/W 40 Reverse Current (µA) Reverse Power Dissipation (mW) 60 PR - Limit at 100 % VR 175 K/W 30 20 10 PR - Limit at 80 % VR 10 0 1 25 50 75 100 125 150 25 50 75 100 125 150 Junction Temperature (°C) Junction Temperature (°C) Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 2 - Reverse Current vs. Junction Temperature Revision: 21-Dec-11 Document Number: 88960 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG24D thru BYG24J www.vishay.com Vishay General Semiconductor 30 100 f = 1 MHz 10 Diode Capacitance (pF) Forward Current (A) 25 TJ = 150 °C TJ = 25 °C 1 0.1 20 15 10 5 0.01 0 0 0.5 1.0 1.5 2.0 2.5 0.1 3.0 1 10 100 Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Forward Current vs. Forward Voltage Fig. 5 - Diode Capacitance vs. Reverse Voltage 1.8 VR = VRRM Half Sine-Wave Average Forward Current (A) 1.6 1.4 RθJA = 25 K/W 1.2 1.0 RθJA = 125 K/W 0.8 0.6 RθJA = 150 K/W 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160 Ambient Temperature (°C) Fig. 4 - Average Forward Current vs. Ambient Temperature PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 21-Dec-11 Document Number: 88960 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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