ON NVTFS5C454NLWFTAG Power mosfet Datasheet

NVTFS5C454NL
Power MOSFET
40 V, 4.0 mW, 85 A, Single N−Channel
Features
•
•
•
•
•
•
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
NVTFS5C454NLWF − Wettable Flanks Product
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
RDS(on) MAX
ID MAX
4.0 mW @ 10 V
40 V
85 A
6.9 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
85
A
Continuous Drain
Current RqJC
(Notes 1, 2, 3, 4)
TC = 25°C
Power Dissipation
RqJC (Notes 1, 2, 3)
Continuous Drain
Current RqJA
(Notes 1 & 3, 4)
Steady
State
TC = 100°C
TC = 25°C
Power Dissipation
RqJA (Notes 1, 3)
Pulsed Drain Current
60
PD
Steady
State
ID
14
PD
MARKING DIAGRAM
W
3.2
1
1.6
IDM
520
A
TJ, Tstg
−55 to
+175
°C
IS
61
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 5 A)
EAS
202
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
WDFN8
(m8FL)
CASE 511AB
XXXX
A
Y
WW
G
1
S
S
S
G
XXXX
AYWWG
G
D
D
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
S (1, 2, 3)
A
20
TA = 100°C
TA = 25°C, tp = 10 ms
G (4)
27
TA = 100°C
TA = 25°C
W
55
TC = 100°C
TA = 25°C
N−Channel
D (5 − 8)
Symbol
Value
Unit
Junction−to−Case − Steady State (Note 3)
RqJC
2.7
°C/W
Junction−to−Ambient − Steady State (Note 3)
RqJA
47
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2017
February, 2017 − Rev. 2
1
Publication Order Number:
NVTFS5C454NL/D
NVTFS5C454NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
VGS = 0 V,
VDS = 40 V
V
TJ = 25°C
10
TJ = 125°C
250
100
mA
IGSS
VDS = 0 V, VGS = 20 V
nA
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
2.2
V
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 20 A
3.3
4.0
mW
VGS = 4.5 V, ID = 20 A
5.5
6.9
gFS
VDS = 15 V, ID = 40 A
80
S
Input Capacitance
Ciss
1600
pF
Output Capacitance
Coss
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
Reverse Transfer Capacitance
Crss
21
Total Gate Charge
QG(TOT)
8.2
nC
Threshold Gate Charge
QG(TH)
2
nC
ON CHARACTERISTICS (Note 5)
Forward Transconductance
1.2
CHARGES AND CAPACITANCES
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 20 V, ID = 40 A
590
3.8
2.1
VGS = 10 V, VDS = 20 V, ID = 40 A
18
nC
9.3
ns
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = 4.5 V, VDS = 20 V,
ID = 40 A
tf
100
17
4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.86
TJ = 125°C
0.75
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 40 A
29
VGS = 0 V, dlS/dt = 100 A/ms,
IS = 40 A
QRR
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2
V
ns
14
15
20
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
1.2
nC
NVTFS5C454NL
TYPICAL CHARACTERISTICS
80
80
VDS = 10 V
10 V to 3.6 V
70
50
40
2.8 V
30
20
60
50
40
30
TJ = 25°C
20
10
10
0
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
3.2 V
60
0.5
1.0
1.5
2.0
2.5
3.0
TJ = −55°C
2
3
5
4
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
TJ = 25°C
ID = 20 A
18
16
14
12
10
8
6
4
2
3
4
5
6
7
9
8
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
8
TJ = 25°C
7
6
VGS = 4.5 V
5
4
VGS = 10 V
3
2
0
10
20
30
40
50
60
70
80
90 100
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
1.E+05
1.9
VGS = 10 V
ID = 20 A
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50 −25
0
TJ = 175°C
IDSS, LEAKAGE (A)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
20
2
TJ = 125°C
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
70
1.E+04
TJ = 125°C
1.E+03
TJ = 85°C
1.E+02
1.E+01
25
50
75
100
125
150
175
5
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NVTFS5C454NL
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
10000
CISS
1000
COSS
100
VGS = 0 V
TJ = 25°C
f = 1 MHz
CRSS
10
0
5
10
15
20
25
30
35
40
10
QT
9
8
7
6
5
QGD
QGS
4
3
VDS = 20 V
ID = 40 A
TJ = 25°C
2
1
0
0
2
4
6
8
10
12
14
18
16
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
1000
IS, SOURCE CURRENT (A)
VGS = 0 V
tr
t, TIME (ns)
100
td(off)
tf
10
1
td(on)
VGS = 4.5 V
VDD = 20 V
ID = 40 A
1
10
10
1
0.1
0.01
0.001
100
TJ = 25°C
TJ = −55°C
TJ = 125°C
0.2
0
0.4
0.6
0.8
1.0
1.2
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
500 ms
100
10 ms
10
IPEAK, (A)
ID, DRAIN CURRENT (A)
1 ms
TC = 25°C
VGS ≤ 10 V
Single Pulse
1
TJ (initial) = 100°C
RDS(on) Limit
Thermal Limit
Package Limit
1
0.1
0.1
TJ (initial) = 25°C
10
1
10
1E−4
100
1E−3
VDS (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
1E−2
NVTFS5C454NL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
RqJA (°C/W)
10
1
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Marking
Package
Shipping†
NVTFS5C454NLTAG
454L
WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFS5C454NLWFTAG
54LW
WDFN8
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVTFS5C454NL
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
B
D1
2X
0.20 C
8 7 6 5
4X
q
E1 E
c
1 2 3 4
A1
TOP VIEW
0.10 C
A
0.10 C
SIDE VIEW
0.10
8X b
C A B
0.05
C
4X
DETAIL A
6X
C
e
SEATING
PLANE
DETAIL A
8X
e/2
L
0.42
4
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.009
0.012
0.026 BSC
0.012
0.016
0.026
0.032
0.012
0.017
0.002
0.005
0.055
0.059
0_
−−−
MIN
0.028
0.000
0.009
0.006
0.65
PITCH
PACKAGE
OUTLINE
K
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
0.037
0.022
0.008
0.063
12 _
4X
0.66
M
E3
8
G
MILLIMETERS
MIN
NOM
MAX
0.80
0.70
0.75
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.23
0.30
0.40
0.65 BSC
0.30
0.41
0.51
0.65
0.80
0.95
0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0_
−−−
12 _
SOLDERING FOOTPRINT*
1
E2
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
q
5
D2
BOTTOM VIEW
3.60
L1
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NVTFS5C454NL/D