Naina MUR30060CT Super fast recovery diode, 300a Datasheet

Naina Semiconductor Ltd.
MUR30040CT thru
MUR30060CTR
Super Fast Recovery Diode, 300A
Features
•
•
•
•
•
Dual Diode Construction
Low Leakage Current
Low forward voltage drop
High surge current capability
Super Fast Switching
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Repetitive peak reverse voltage
Symbol Conditions MUR30040CT(R)
VRRM
400
RMS reverse voltage
VRMS
DC blocking voltage
Average forward current
Non-repetitive forward surge current, half sinewave
VDC
IF(AV)
IFSM
MUR30060CT(R) Units
600
V
280
420
V
TC ≤ 140 C
400
300
600
300
V
A
TC = 25 oC
1500
1500
A
o
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
DC forward voltage
Symbol
VF
DC reverse current
IR
Maximum Reverse Recovery Time
trr
Conditions
IF = 50 A
TJ = 25 oC
VR = 50 V
TJ = 25 oC
VR = 50 V
TJ = 125oC
IF = 0.5A
IR = 1.0A
IRR = 0.25A
MUR30040CT(R) MUR30060CT(R)
Units
1.5
1.7
V
25
25
µA
1
1
mA
110
150
nS
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Thermal resistance
junction to case
Operating, storage temperature range
1
Symbol
MUR30040CT(R) MUR30060CT(R)
RthJ-C
1.0
1.0
TJ , Tstg
- 40 to +175
- 40 to +175
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
Units
o
C/W
o
C
Naina Semiconductor Ltd.
MUR30040CT thru
MUR30060CTR
Package Outline
ALL DIMENSIONS IN MM
Ordering Table
MUR
1
300
2
40
3
CT
4
1 – Device Type
> MUR = Dual Diode Recovery Module
2 – Current Rating = IF(AV)
3 – Voltage = code x 10 = VRRM
4 – Polarity
> CT = Normal (Cathode to Base)
> CTR = Reverse (Anode to Base)
2
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
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