LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only BAR DIGIT LED DISPLAY LBD1F1/25-XX DATA SHEET DOC. NO : QW0905- LBD1F1/25-XX REV. : B DATE : 11 - Feb. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/7 PART NO. LBD1F1/25-XX Package Dimensions 58.0(2.28") 56(2.20") 8.0(0.31") 1.6 A 5.0(2.0") B C D E F G H I J K L 7.0(0.28") 4*1.5 4.3*11=47.3(1.86") 21.59(0.85") 21.59(0.85") 4.5±0.5 Ø0.51 TYP 2.54*6= 15.24(0.6") 2.54*6= 15.24(0.6") PIN NO.1 Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25(0.01") unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/7 PART NO.LBD1F1/25-XX Internal Circuit Diagram LBD1F15-XX COM,1 A 2 B 3 D C 4 COM,14 5 E 6 F 8 7 H G 9 I J K L 10 11 12 13 LBD1F25-XX COM,1 A 2 B 3 D C 4 COM,14 5 E 6 F 7 H G 8 9 I J K L 10 11 12 13 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO.LBD1F1/25-XX Page 3/7 Electrical Connection PIN NO. LBD1F15-XX PIN NO. LBD1F25-XX 1 Common Cathode 1 Common Anode 2 Anode A 2 Cathode A 3 Anode B 3 Cathode B 4 Anode C 4 Cathode C 5 Anode D 5 Cathode D 6 Anode E 6 Cathode E 7 Anode F 7 Cathode F 8 Anode F 8 Cathode F 9 Anode F 9 Cathode F 10 Anode G 10 Cathode G 11 Anode A 11 Cathode A 12 Anode A 12 Cathode A 13 Anode F 13 Cathode F 14 Common Cathode 14 Common Anode LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/7 PART NO.LBD1F1/25-XX Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT SR Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 100 mA Power Dissipation Per Chip PD 100 mW Ir 10 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode Material Emitted or anode CHIP PART NO △λ (nm) (nm) Vf(v) Iv(mcd) IV-M Min. Typ. Max. Min. Typ. Common Cathode LBD1F15-XX GaAlAs LBD1F25-XX Electrical λP 660 Red 20 1.5 1.8 Common Anode Note : 1.The forward voltage data did not including ± 0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 2.4 5.0 8.5 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/7 PART NO.LBD1F1/25-XX Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Peak Wavelength λP nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO.LBD1F1/25-XX Page 6/7 Typical Electro-Optical Characteristics Curve SR CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 1.0 5.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 600 650 700 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 750 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO.LBD1F1/25-XX Page 7/7 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5 ℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11