IRF IRHE53034 Radiation hardened power mosfet surface mount (lcc-18) Datasheet

PD - 94239E
IRHE57034
JANSR2N7495U5
60V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
REF: MIL-PRF-19500/700
5
TECHNOLOGY
™
Product Summary
Part Number Radiation Level RDS(on)
IRHE57034
100K Rads (Si)
0.08Ω
IRHE53034
300K Rads (Si)
0.08Ω
ID
11.7A
11.7A
QPL Part Number
JANSR2N7495U5
JANSF2N7495U5
IRHE54034
500K Rads (Si)
0.08Ω
11.7A
JANSG2N7495U5
IRHE58034
1000K Rads (Si)
0.1Ω
11.7A
JANSH2N7495U5
LCC-18
TM
International Rectifier’s R5 technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
11.7
7.4
46.8
25
0.2
±20
87
11.7
2.5
3.4
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (for 5s)
0.42 (Typical)
C
g
For footnotes refer to the last page
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1
04/27/06
IRHE57034, JANSR2N7495U5
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Drain-to-Source Breakdown Voltage
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
60
—
—
V
—
0.058
—
V/°C
—
—
0.08
Ω
2.0
7.0
—
—
—
—
—
—
4.0
—
10
25
V
S( )
Ω
Parameter
BVDSS
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
100
-100
45
15
20
25
100
35
30
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1250
520
16
—
—
—
nA
nC
ns
nH
pF
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
V GS = 12V, ID = 7.4A
Ã
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 7.4A Ã
VDS= 48V ,VGS=0V
VDS = 48V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 11.7A
VDS = 30V
VDD = 30V, ID = 11.7A,
VGS =12V, RG = 7.5Ω
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
11.7
46.8
1.8
125
420
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 11.7A, VGS = 0V Ã
Tj = 25°C, IF = 11.7A, di/dt ≤100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
RthJA
Junction-to-Case
Junction-to-PC board
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
19
75
5.0
—
—
°C/W
Test Conditions
soldered to a copper-clad PC board
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHE57034, JANSR2N7495U5
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Test Conditions
Up to 500K Rads(Si)1 1000K Rads (Si)2 Units
Min
Max
Min
Max
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source Ã
On-State Resistance (LCC-18)
Diode Forward Voltage Ã
60
2.0
—
—
—
—
—
4.0
100
-100
10
0.034
—
0.08
—
1.8
60
1.5
—
—
—
—
—
4.0
100
-100
25
0.043
nA
µA
Ω
VGS = 0V, I D = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS = 48V, VGS =0V
VGS = 12V, ID =7.4A
—
0.1
Ω
VGS = 12V, ID =7.4A
—
1.8
V
V
VGS = 0V, IS = 11.7A
1. Part numbers IRHE57064 (JANSR2N7495U5), IRHE53064 (JANSF2N7495U5) and IRHE54064 (JANSH2N7495U5)
2. Part number IRHE58064 (JANSH2N7495U5)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
VDS (V)
Range
(µm) @V GS =0V @VGS= -5V @VGS= -10V @VGS=-15V @VGS=-20V
36.8
60
60
60
60
40
29
46
46
35
25
15
106
35
35
27
20
14
Energy
(MeV)
285
300
2068
VDS
Br
Xe
Au
LET
(MeV/(mg/cm2))
37.3
63
86.6
70
60
50
40
30
20
10
0
Br
Xe
Au
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHE57034, JANSR2N7495U5
100
Pre-Irradiation
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
10
5.0V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 150 ° C
10
TJ = 25 ° C
V DS = 25V
15
20µs PULSE WIDTH
9.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
10
100
Fig 2. Typical Output Characteristics
2.0
8.0
1
VDS , Drain-to-Source Voltage (V)
100
7.0
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
Fig 1. Typical Output Characteristics
6.0
5.0V
10
VDS , Drain-to-Source Voltage (V)
1
5.0
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
12A
ID = 11.7A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
2400
Ciss
1800
Coss
1200
600
Crss
20
VGS , Gate-to-Source Voltage (V)
3000
IRHE57034, JANSR2N7495U5
ID = 11.7A
12A
VDS = 48V
VDS = 30V
VDS = 12V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
10
0
100
20
30
40
50
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
10
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
TJ = 150 ° C
TJ = 25 ° C
1
V GS = 0 V
0.1
0.2
0.8
1.4
2.0
VSD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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2.6
100µs
10
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
1
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHE57034, JANSR2N7495U5
Pre-Irradiation
12
RD
VDS
VGS
10
D.U.T.
ID , Drain Current (A)
RG
+
-V DD
8
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
4
VDS
2
90%
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
0.1
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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IRHE57034, JANSR2N7495U5
15V
L
VDS
D.U.T.
RG
IAS
VGS
20V
DRIVER
+
- VDD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
Pre-Irradiation
200
ID
5.2A
7.4A
BOTTOM 11.7A
TOP
160
120
80
40
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
V(BR)DSS
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHE57034, JANSR2N7495U5
Pre-Irradiation
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L= 1.27mH
Peak IL = 11.7A, VGS = 12V
 ISD ≤ 11.7A, di/dt ≤ 220A/µs,
VDD ≤ 60V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
48 volt VDS applied and V GS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — LCC-18
PAD ASSIGNMENTS
G = GATE
D = DRAIN
S = SOURCE
NC = NO CONNECTION
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IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
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Data and specifications subject to change without notice. 04/2006
8
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