Gunter Semiconductor GmbH GFCF20 N Channel Power MOSFET Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 150℃ ℃ Operating Temperature * Fast Switching * Fully Avalanche Rated Mechanical Data: D11 Dimension 3.56mm x 3.63mm 480 µm Thickness: Metallization: Al Top : : CrNiAg / Au Backside : Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn Source Bonding Wire: 5 mil Al Absolute Maximum Rating Characteristics @Ta=25℃ ℃ Symbol Limit Unit Test Conditions Drain-to-Source Breakdown Voltage V(BR)DSS 900 V VGS=0V, ID=250µΑ Static Drain-to - Source On-resistance RDS(ON) 8 Ω VGS=10V, ID=1Α Continuous Drain current ( in target package) ID@25℃ 1.7 A VGS=10V Continuous Drain current ( in target package) ID@100℃ 1.1 A VGS=10V Tj -55~150 ℃ TSTR -55~150 ℃ PD 54 W Operation Junction Storage Temperature Target Device: IRFBF20 TO-220AB @Tc=25℃