S D S S D S ARF1500 D ARF1500 BeO RF POWER MOSFET 1525-xx G S N - CHANNEL ENHANCEMENT MODE S G S S G S 125V 750W 40MHz The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz. • Specified 125 Volt, 27.12 MHz Characteristics: • Output Power = 750 Watts. • Gain = 17dB (Class C) • Efficiency > 75% • High Performance Power RF Package. • Very High Breakdown for Improved Ruggedness. • Low Thermal Resistance. • Nitride Passivated Die for Improved Reliability. MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter ARF1500 UNIT Drain-Source Voltage 500 Volts Continuous Drain Current @ TC = 25°C 60 Amps VGS Gate-Source Voltage ±30 Volts PD Total Device Dissipation @ TC = 25°C 1500 Watts TJ,TSTG TL -55 to 200 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 On State Drain Voltage 1 (ID(ON) = 30A, VGS = 10V) TYP MAX 6 7.5 Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 1000 IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±400 g fs Forward Transconductance (VDS = 25V, ID = 30A) IDSS V isolation RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute) VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 6 7.5 UNIT Volts µA nA mhos 2500 Volts 3 5 Volts MAX UNIT Characteristic (per package unless otherwise noted) RθJC Junction to Case RθCS Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP 0.12 0.09 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com °C/W 050-5965 Rev C Symbol 9-2005 THERMAL CHARACTERISTICS DYNAMIC CHARACTERISTICS Symbol ARF1500 Test Conditions Characteristic MIN TYP MAX 5150 6030 VDS = 150V 500 650 f = 1 MHz 215 225 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time VGS = 15V 7.5 Rise Time VDD = 250 6.0 ID = 60A @ 25°C 20 RG = 1.6 Ω 10 tr td(off) tf VGS = 0V Turn-off Delay Time Fall Time UNIT pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS η ψ Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 27.12 MHz 17 19 dB 70 75 % VGS = 0V Drain Efficiency Electrical Ruggedness VSWR 10:1 VDD = 125V Pout = 750W MAX UNIT No Degradation in Output Power 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%. APT Reserves the right to change, without notice, the specifications and information contained herein. Per transistor section unless otherwise specified. 20,000 10,000 Ciss CAPACITANCE (pf) 5000 1000 Coss 500 Crss 100 .1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1, Typical Capacitance vs. Drain-to-Source Voltage 240 VDS> ID(ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 50 TJ = -55°C 40 30 20 TJ = +25°C 10 DATA FOR BOTH SIDES IN PARALLEL ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 050-5965 Rev C 9-2005 60 100 0 2 4 6 8 10 12 14 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Transfer Characteristics 100us 50 10 1ms 5 TC =+25°C TJ =+200°C SINGLE PULSE TJ = +125°C 0 OPERATION HERE LIMITED BY RDS (ON) 1 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Maximum Safe Operating Area 10ms 100ms 1.15 ID, DRAIN CURRENT (AMPERES) 1.10 VGS(th), THRESHOLD VOLTAGE (NORMALIZED) ARF1500 6 1.05 1.00 0.95 0.90 0.85 10.2V 5 8.2V 4 6.2V 3 4.2V 2 2.2V 1 0.80 0.75 -50 -25 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 4, Typical Threshold Voltage vs Temperature 2V 0 5 10 15 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5, Typical Output Characteristics 0.12 D = 0.9 0.10 0.7 0.08 0.5 0.06 0.3 0.04 t2 0.1 Peak TJ = PDM x ZθJC + TC 0.05 10-5 t1 Duty Factor D = t1/t2 SINGLE PULSE 0.02 0 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 0.14 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 6, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration 1.0 Table 1 - Typical Class AB Large Signal Impedance -- ARF1500 ZOL (Ω) 7.5 -j 0.8 7.1 -j 1.7 6.1 -j 3.0 5.0 -j 3.6 Zin - Gate shunted with 25Ω IDQ = 100mA ZOL - Conjugate of optimum load for 750 Watts output at Vdd = 125V Clamp 1.065 .250 Thermal Considerations and Package Mounting: S S .500 Heat Sink The rated 1500W power dissipation is only available when the package mounting surface is at 25°C and the junction temperature is 200°C. The thermal resistance between junctions and case mounting surface is 0.12 °C/W. When installed, an additional thermal impedance of 0.1°C/W between the package base and the mounting surface is typical. Insure that the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to obtain best results. The package is designed to be clamped to a heatsink. A clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the device and the heat sink. A simple clamp, and two 6-32 (M3.5) screws can provide the minimum 125 lb required mounting force. T = 12 in-lb. D ARF15-BeO 1525-xx 1.065 .045 S G S .207 .375 .207 .500 .005 .105 typ. HAZARDOUS MATERIAL WARNING D G S The ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area . These devices must never be thrown away with general industrial or domestic waste. 9-2005 2.0 13.5 27 40 Zin (Ω) 6.7-j 12 0.45 -j 2.5 0.22 -j 0.67 0.2 + j .19 050-5965 Rev C F (MHz) C7 C9 C10 L4 RF Input L1 L2 + 125V - C8 L5 L3 TL1 Output C4 C11 C5 R1 C1 C2 C3 ARF1500 27.12 MHz Test Circuit C1,C11 ARCO 465 50-450pF mica trimmer C2 1500pF ATC 700B C3 2x 3300 pF ATC 700B C4 8200pF 500V NPO ceramic C5 150pF 500V NPO C7-C8 .1uF 250V ceramic chip C9- C10 1000pF Z5U 500V L1 120 nH 5t #20 .25"d .3"l L2 20 nH #20 hairpin loop .3" x .125" L3 175 nH - 4t #10 .625" dia .875" l L4 2uH - 22t #24 enam. .312" dia. L5 500nH 2t on 850u .5" bead R1 51 Ω .5W TL1 .25" x 1.75" (30 Ω) Stripline 27 MHz Test Amp ARF1500 BeO 135-05 ARF1500 J1 J2 RF 3-02 Parts placement 050-5965 Rev C 9-2005 27 MHz Test Amp ARF1500 RF 3-02 1:1 pcb artwork