DMG3N60SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BVDSS RDS(ON) Package ID TC = +25°C 600V 3.5Ω@VGS = 10V TO220AB (Type TH) 3.3A Low Input Capacitance High BVDSS Rating for Power Application Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description Mechanical Data This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Applications Case: TO220AB (Type TH) Case Material: Molded Plastic, “Green” Molding Compound, UL Flammability Classification Rating 94V-0 Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Below Weight: 1.85 grams (Approximate) Motor Control Backlighting DC-DC Converters Power Management Functions TO220AB (Type TH) Bottom View Top View Equivalent Circuit Top View Pin Out Configuration Ordering Information (Note 4) Part Number DMG3N60SCT Notes: Case TO220AB (Type TH) Packaging 50 Pieces/Tube 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 3N60SCT =Manufacturer’s Marking 3N60SCT = Product Type Marking Code YYWW = Date Code Marking YY or YY = Last Two Digits of Year (ex: 16 = 2016) WW or WW = Week Code (01 to 53) YYWW DMG3N60SCT Document number: DS39130 Rev. 2 - 2 1 of 7 www.diodes.com January 2017 © Diodes Incorporated DMG3N60SCT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Continuous Drain Current (Note 5) VGS = 10V TC = +25°C TC = +100°C ID Maximum Body Diode Forward Current (Note 5) Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Avalanche Current, L = 60mH (Note 6) Avalanche Energy, L = 60mH (Note 6) Peak Diode Recovery dv/dt IS IDM IAS EAS dv/dt Value 600 ±30 3.3 2 2.5 3.7 1 30 2.7 Unit V V A A A A mJ V/ns Thermal Characteristics Characteristic Symbol TC = +25°C TC = +100°C Total Power Dissipation (Note 5) Value 104 42 57 1.2 PD Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range RJA RJC TJ, TSTG Unit W °C/W -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 600 1 100 V µA nA VGS = 0V, ID = 250µA VDS = 600V, VGS = 0V VGS = ±30V, VDS = 0V VGS(TH) RDS(ON) VSD 2.0 3.1 2.7 0.87 4.0 3.5 1.5 V V VDS = VGS, ID = 250µA VGS = 10V, ID = 1.5A VGS = 0V, IS = 3.0A Ciss Coss Crss RG Qg Qgs Qgd 354 41 4 2.6 12.6 1.7 7.1 10.6 22 34 28 198 952 pF VDS = 25V, f = 1.0MHz, VGS = 0 VDS = 0V, VGS = 0V, f = 1.0MHz nC VDD = 480V, ID = 2.5A, VGS = 10V ns VDD = 300V, RG = 25, ID = 2.5A, VGS = 10V ns nC dI/dt = 100A/μs, VDS = 100V, IF = 2.5A tD(ON) tR tD(OFF) tF tRR QRR Test Condition 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Guaranteed by design. Not subject to production testing. 7. Short duration pulse test used to minimize self-heating effect. DMG3N60SCT Document number: DS39130 Rev. 2 - 2 2 of 7 www.diodes.com January 2017 © Diodes Incorporated DMG3N60SCT 1 5.0 VDS=10V VGS = 10.0V 0.8 4.0 VGS = 5.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 20.0V 3.0 VGS = 4.5V 2.0 VGS = 8.0V 1.0 0.4 0.2 25℃ 125℃ -55℃ 0.0 0 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 4 2 3.5 VGS = 10V 3 2.5 2 1.5 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 5 10 8 6 ID = 1.5A 4 2 0 0 0.5 1 1.5 2 2.5 3 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 5 10 15 20 25 30 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 3 9 VGS=10V 8 150℃ 7 125℃ 6 5 85℃ 4 3 25℃ 2 1 -55℃ 0 0 0.5 1 1.5 2 2.5 3 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMG3N60SCT Document number: DS39130 Rev. 2 - 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 85℃ 150℃ VGS = 4.0V VGS = 6.0V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.6 2.5 2 VGS = 10V, ID = 4A 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature 3 of 7 www.diodes.com January 2017 © Diodes Incorporated DMG3N60SCT 7 6 5 3.8 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 8 VGS = 10V, ID = 1.5A 4 3 2 1 3.6 3.4 3 2.6 2.4 2.2 2 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 1000 3 CT, JUNCTION CAPACITANCE (pF) VGS = 0V 2.5 IS, SOURCE CURRENT (A) ID = 250μA 2.8 0 2 1.5 TA = 150oC 1 TA = 125oC 0.5 TA = 85oC TA = 25oC TA = -55oC 0 0 f=1MHz Ciss Coss 100 Crss 10 1 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) 40 Figure 10. Typical Junction Capacitance 10 10 RDS(ON) Limited ID, DRAIN CURRENT (A) 8 VGS (V) ID = 1mA 3.2 VDS = 480V, ID = 2.5A 6 4 PW =100µs PW =1µs PW =10µs 1 PW =1ms PW =10ms PW =100ms 0.1 TJ(MAX)=150℃ TC=25℃ Single Pulse DUT on infinite heatsink VGS=10V 2 PW =1s 0.01 0 0 2 4 6 8 10 Qg (nC) Figure 11. Gate Charge DMG3N60SCT Document number: DS39130 Rev. 2 - 2 12 10 14 4 of 7 www.diodes.com 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 1000 January 2017 © Diodes Incorporated DMG3N60SCT r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.9 D=0.5 D=0.7 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 RθJC(t) = r(t) * RθJC RθJC= 1.23℃/W Duty Cycle, D = t1 / t2 D=0.005 D=Single Pulse 0.001 1E-06 DMG3N60SCT Document number: DS39130 Rev. 2 - 2 1E-05 0.0001 0.001 0.01 0.1 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance 5 of 7 www.diodes.com 1 10 January 2017 © Diodes Incorporated DMG3N60SCT Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TO220AB (Type TH) Eb A Ø P A1 Q H1 01 E E2b E2a D D2a D2 D1 A2 E2 01 02 L1 b2 b L C1 e 02(2x) e1 C Ea DMG3N60SCT Document number: DS39130 Rev. 2 - 2 6 of 7 www.diodes.com TO220AB (Type TH) Dim Min Max Typ A 4.27 4.87 4.57 A1 1.12 1.42 1.27 A2 2.39 2.99 2.69 b 0.70 1.01 0.81 b2 1.17 1.50 1.27 c 0.30 0.53 0.38 c1 0.38 0.72 0.56 D 14.60 15.40 15.00 D1 8.40 9.00 8.70 D2 5.33 6.63 6.33 D2a 4.54 5.84 5.54 e 2.54 BSC e1 5.08 BSC E 9.88 10.50 10.16 Ea 9.90 10.45 10.10 Eb 9.90 10.65 10.25 E2 7.06 8.36 8.06 E2a 6.67 7.97 7.67 E2b 4.94 6.24 5.94 H1 5.70 6.65 6.30 L 13.00 13.80 13.40 L1 4.10 3.75 Q 2.50 2.99 2.74 ØP 3.70 3.99 3.84 θ1 4° 10° 7° θ2 0° 6° 3° All Dimensions in mm January 2017 © Diodes Incorporated DMG3N60SCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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