ON NTF3055L175T1G Power mosfet 2.0 a, 60 v, logic level Datasheet

NTF3055L175
Preferred Device
Power MOSFET
2.0 A, 60 V, Logic Level
N−Channel SOT−223
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
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2.0 A, 60 V
RDS(on) = 175 m
Features
• Pb−Free Packages are Available
Applications
•
•
•
•
N−Channel
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
D
G
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
Vdc
Drain−to−Gate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 10 ms)
VGS
± 15
± 20
Vdc
Vpk
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tp ≤ 10 s)
ID
ID
2.0
1.2
6.0
Adc
2.1
1.3
0.014
W
W
W/°C
Rating
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Derate above 25°C
IDM
PD
1
SOT−223
CASE 318E
STYLE 3
2
3
MARKING DIAGRAM
TJ, Tstg
−55
to 175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL(pk) = 3.6 A, L = 10 mH, VDS = 60 Vdc)
EAS
65
mJ
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
4
Apk
Operating and Storage Temperature Range
Thermal Resistance
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
S
5L175
L
WW
= Device Code
= Location Code
= Work Week
5L175
LWW
PIN ASSIGNMENT
4 Drain
°C/W
RJA
RJA
72.3
114
TL
260
°C
1. When surface mounted to an FR4 board using 1″ pad size, 1 oz. (Cu. Area
0.995 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2−2.4 oz. (Cu. Area 0.272 in2).
1
Gate
2
3
Drain
Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future
use and best overall value.
 Semiconductor Components Industries, LLC, 2004
February, 2004 − Rev. 2
1
Publication Order Number:
NTF3055L175/D
NTF3055L175
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
60
−
72.8
74.4
−
−
−
−
−
−
1.0
10
−
−
± 100
1.0
−
1.7
4.2
2.0
−
−
155
175
−
0.32
0.57
0.42
−
gfs
−
3.2
−
Mhos
Ciss
−
194
270
pF
Coss
−
70
100
Crss
−
29
40
td(on)
−
10.2
20
tr
−
21
40
td(off)
−
14.3
30
tf
−
15.3
30
QT
−
5.1
10
Q1
−
1.4
−
Q2
−
2.5
−
−
−
0.84
0.68
1.0
−
trr
−
28.3
−
ta
−
15.6
−
tb
−
12.7
−
QRR
−
0.027
−
OFF CHARACTERISTICS
V(BR)DSS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current
Vdc
Adc
IDSS
(VGS = ± 15 Vdc, VDS = 0 Vdc)
IGSS
mV/°C
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 5.0 Vdc, ID = 1.0 Adc)
RDS(on)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 5.0 Vdc, ID = 2.0 Adc)
(VGS = 5.0 Vdc, ID = 1.0 Adc, TJ = 150°C)
VDS(on)
Forward Transconductance (Note 3)
(VDS = 8.0 Vdc, ID = 1.5 Adc)
Vdc
mV/°C
m
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 V,
V
f = 1.0 MHz)
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 30 Vdc, ID = 2.0 Adc,
VGS = 5.0
5 0 Vdc,
Vdc
RG = 9.1 ) (Note 3)
Fall Time
Gate Charge
(VDS = 48 Vdc,
Vd ID = 2.0
2 0 Adc,
Ad
VGS = 5.0 Vdc) (Note 3)
ns
nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 2.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc,
TJ = 150°C) (Note 3)
Reverse Recovery Time
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
4. Switching characteristics are independent of operating junction temperatures.
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2
VSD
Vdc
ns
C
3.2
3.2
2.8
2.8
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
NTF3055L175
VGS = 3.5 V
2.4
VGS = 4 V
2.0
VGS = 3 V
1.6
VGS = 5 V
1.2
0.8
VGS = 2.5 V
0.4
0
1.2
0.8
0.4
2.0
1.6
2.4
2
1.6
1.2
TJ = 100°C
0.8
TJ = 25°C
0.4
1
2.8
TJ = −55°C
2.2
2.6
3
3.4
3.8
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
Figure 1. On−Region Characteristics
VGS = 5 V
TJ = 100°C
0.24
0.2
TJ = 25°C
0.16
0.12
TJ = −55°C
0.08
0.04
0.5
1
1.5
2
2.5
3
3.5
4
4.2
0.28
VGS = 10 V
0.24
0.2
0.16
TJ = 25°C
0.12
0.08
0.04
0
0
0.5
1
1.5
2
2.5
3
3.5
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
4
1000
2
1.8
1.8
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.28
0
1.4
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
VGS = 0 V
ID = 1 A
VGS = 5 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
2.4
0
0
0
VDS ≥ 10 V
1.6
1.4
1.2
1
TJ = 150°C
100
TJ = 125°C
10
TJ = 100°C
0.8
0.6
−50
1
−25
0
25
50
75
100
125
150
175
0
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
60
700
VGS = 0 V
VDS = 0 V
TJ = 25°C
600
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
NTF3055L175
Ciss
500
400
Crss
300
Ciss
200
Coss
100
Crss
0
10
5 VGS 0 VDS 5
10
15
20
25
Q2
3
2
1
ID = 2 A
TJ = 25°C
0
0
1
2
3
4
5
6
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
2
IS, SOURCE CURRENT (AMPS)
10
tf
td(off)
td(on)
1
10
100
VGS = 0 V
TJ = 25°C
1.6
1.2
0.8
0.4
0
0.6
0.64
0.68
0.76
0.72
0.8
0.84
0.88
RG, GATE RESISTANCE ()
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage versus Current
VGS = 15 V
SINGLE PULSE
TC = 25°C
10 ms
1 ms
100 s
10 s
1
0.1
0.01
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.001
0.1
1
dc
10
100
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
t, TIME (ns)
ID, DRAIN CURRENT (AMPS)
Q1
4
Figure 7. Capacitance Variation
tr
10
QT
5
Qg, TOTAL GATE CHARGE (nC)
VDS = 30 V
ID = 2 A
VGS = 5 V
100
VGS
6
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
100
1
7
70
ID = 6 A
60
50
40
30
20
10
0
25
50
75
100
125
150
175
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
NTF3055L175
100
D = 0.5
10
0.2
0.1
0.05
1
P(pk)
TEST TYPE > MIN PAD 1 OZ
(Cu Area = 0.272 sq in)
< DIE SIZE 56 X 56 MILS
0.01
t1
RJC = MIN PAD 1 OZ
(Cu Area = 0.272 sq in) °C/W
SINGLE PULSE
t2
DUTY CYCLE, D = t1/t2
0.1
0.00001
0.0001
0.001
0.1
0.01
1
10
100
1000
t, TIME (s)
Figure 13. Thermal Response
ORDERING INFORMATION
Package
Shipping†
NTF3055L175T1
SOT−223 (TO−261)
1000 / Tape & Reel
NTF3055L175T1G
SOT−223 (TO−261)
(Pb−Free)
1000 / Tape & Reel
NTF3055L175T3
SOT−223 (TO−261)
4000 / Tape & Reel
NTF3055L175T3G
SOT−223 (TO−261)
(Pb−Free)
4000 / Tape & Reel
NTF3055L175T3LF
SOT−223 (TO−261)
4000 / Tape & Reel
NTF3055L175T3LFG
SOT−223 (TO−261)
(Pb−Free)
4000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTF3055L175
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
F
INCHES
DIM MIN
MAX
A
0.249
0.263
B
0.130
0.145
C
0.060
0.068
D
0.024
0.035
F
0.115
0.126
G
0.087
0.094
H 0.0008 0.0040
J
0.009
0.014
K
0.060
0.078
L
0.033
0.041
M
0
10 S
0.264
0.287
4
S
B
1
2
3
D
L
G
J
C
0.08 (0003)
STYLE 3:
PIN 1.
2.
3.
4.
M
H
K
MILLIMETERS
MIN
MAX
6.30
6.70
3.30
3.70
1.50
1.75
0.60
0.89
2.90
3.20
2.20
2.40
0.020
0.100
0.24
0.35
1.50
2.00
0.85
1.05
0
10 6.70
7.30
GATE
DRAIN
SOURCE
DRAIN
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm inches
SOT−223
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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NTF3055L175/D
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