1200V 30A APT30DQ120B APT30DQ120S APT30DQ120BG* APT30DQ120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE (B) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters -Inverters • Snubber Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • PFC TO - 24 7 D3PAK 1 2 • Cooler Operation • Popular TO-247 Package or Surface Mount D3PAK Package • Higher Reliability Systems • Low Forward Voltage • Low Leakage Current 2 1 (S) 2 1 • Increased System Power Density • Avalanche Energy Rated 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol VR All Ratings: TC = 25°C unless otherwise specified. Characteristic / Test Conditions APT30DQ120B_S(G) UNIT 1200 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 103°C, Duty Cycle = 0.5) 30 RMS Forward Current (Square wave, 50% duty) 43 IF(RMS) IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) EAVL Avalanche Energy (1A, 40mH) TJ,TSTG TL Amps 210 20 mJ -55 to 175 Operating and StorageTemperature Range °C 300 Lead Temperature for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS VF Characteristic / Test Conditions Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V MIN TYP MAX IF = 30A 2.8 3.3 IF = 60A 3.4 IF = 30A, TJ = 125°C 2.1 Volts VR = 1200V 100 VR = 1200V, TJ = 125°C 500 Microsemi Website - http://www.microsemi.com 36 UNIT µA pF 053-4244 Rev B 7-2009 Symbol DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Time Qrr Reverse Recovery Charge trr IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C VR = 800V, TC = 25°C IF = 30A, diF/dt = -200A/µs Maximum Reverse Recovery Current VR = 800V, TC = 125°C Reverse Recovery Time Qrr IRRM IF = 30A, diF/dt = -1000A/µs Reverse Recovery Charge Maximum Reverse Recovery Current MIN TYP MAX UNIT - 26 - 320 - 545 - 4 - 435 ns - 2100 nC - 9 - 180 ns - 2975 nC - 28 Amps MIN TYP ns IF = 30A, diF/dt = -200A/µs Maximum Reverse Recovery Current trr IRRM APT30DQ120B_S(G) VR = 800V, TC = 125°C nC - - Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC WT Torque Characteristic / Test Conditions Junction-to-Case Thermal Resistance Package Weight MAX UNIT .80 °C/W 0.22 oz 5.9 g Maximum Mounting Torque 10 lb•in 1.1 N•m Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.80 D = 0.9 0.70 0.60 0.7 0.50 0.5 0.40 0.30 0.3 t1 t2 0.20 t SINGLE PULSE 0.1 0.10 0.05 0 10 053-4244 Rev B 7-2009 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 0.90 -5 10-4 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION APT30DQ120B_S(G) TYPICAL PERFORMANCE CURVES 200 160 140 TJ = 175°C 120 100 80 TJ = 25°C TJ = 125°C 60 40 TJ = -55°C 20 0 0 1 2 3 4 5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage Qrr, REVERSE RECOVERY CHARGE (nC) 5000 T = 125°C J V = 800V R 60A 4000 3000 30A 2000 15A 1000 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change R 400 30A 300 15A 200 100 35 T = 125°C J V = 800V R 30 60A 25 30A 20 15 15A 10 5 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 50 trr 1.0 60A 500 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 1.2 Qrr Duty cycle = 0.5 T = 175°C 45 J 40 trr 0.8 IRRM 35 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) T = 125°C J V = 800V 0 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 180 trr, REVERSE RECOVERY TIME (ns) 600 0.6 30 25 20 0.4 Qrr 15 10 0.2 5 0.0 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 200 160 140 120 100 80 60 40 20 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-4244 Rev B 7-2009 CJ, JUNCTION CAPACITANCE (pF) 180 APT30DQ120B_S(G) Vr diF /dt Adjust +18V APT10035LLL 0V D.U.T. 30μH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 0.25 IRRM 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions 3 D PAK Package Outline TO-247 Package Outline e1 SAC: Tin, Silver, Copper 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC Cathode e3 100% Sn 5.38 (.212) 6.20 (.244) 4.90 (.193) 5.10 (.201) 1.45 (.057) 1.60 (.063) 15.85 (.624) 16.05(.632) 1.00 (.039) 1.15(.045) 20.80 (.819) 21.46 (.845) 0.40 (.016) 0.65 (.026) 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 0.020 (.001) 0.250 (.010) 2.70 (.106) 2.90 (.114) 1.15 (.045) 1.45 (.057) 1.20 (.047) 1.90 (.075) 1.40 (.055) 2.10 (.083) 5.45 (.215) BSC (2 Plcs.) Anode 2.21 (.087) 2.59 (.102) Cathode 10.90 (.430) BSC Dimensions in Millimeters and (Inches) 13.30 (.524) 13.60(.535) 12.40 (.488) 12.70 (.500) 18.70 (.736) 19.10 (.752) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 053-4244 Rev B 7-2009 Cathode (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.40 (.094) 2.70 (.106) (Base of Lead) Heat Sink (Cathode) and Leads are Plated Anode Cathode Dimensions in Millimeters (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.