SRAM MT5C6404 Austin Semiconductor, Inc. 16K x 4 SRAM PIN ASSIGNMENT (Top View) SRAM MEMORY ARRAY 22-Pin DIP (C) (300 MIL) AVAILABLE AS MILITARY SPECIFICATIONS • • • A5 A6 A7 A8 A9 A10 A11 A12 A13 CE\ Vss SMD 5962-86859 SMD 5962-89692 MIL-STD-883 FEATURES • Speeds: 12, 15, 20, 25, 35, 45, 55, and 70ns • Battery Backup: 2V data retention • High-performance, low-power CMOS double-metal process • Single +5V (+10%) Power Supply • Easy memory expansion with CE\ • All inputs and outputs are TTL compatible OPTIONS MARKING • Timing 12ns access 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access 70ns access -12 -15 -20 -25 -35 -45* -55* -70* • Package(s) Ceramic DIP (300 mil) C Vcc A4 A3 A2 A1 A0 DQ4 DQ3 DQ2 DQ1 WE\ The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE\) on all organizations. This enhancement can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ goes LOW. The device offers a reduced power standby mode when disabled. This allows system designs to achieve low standby power requirements. All devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible. No. 105 L For more products and information please visit our web site at www.austinsemiconductor.com *Electrical characteristics identical to those provided for the 35ns access devices. MT5C6404 Rev. 1.0 9/01 22 21 20 19 18 17 16 15 14 13 12 GENERAL DESCRIPTION • Operating Temperature Ranges Industrial (-40oC to +85oC) IT Military (-55oC to +125oC) XT • 2V data retention/low power 1 2 3 4 5 6 7 8 9 10 11 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 1 SRAM MT5C6404 Austin Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM VCC GND A A A I/O CONTROL A DQ4 ROW DECODER A 65,536-BIT MEMORY ARRAY DQ A A CE\ (LSB) WE\ COLUMN DECODER (LSB) DIP A A A A A A POWER DOWN A TRUTH TABLE MODE STANDBY READ WRITE MT5C6404 Rev. 1.0 9/01 CE\ H L L WE\ X H L DQ HIGH-Z Q D POWER STANDBY ACTIVE ACTIVE Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 SRAM MT5C6404 Austin Semiconductor, Inc. ABSOLUTE MAXIMUM RATINGS* Voltage on any Input or DQ Relative to Vss...-2.0V to +7.0V Voltage on Vcc Supply Relative to Vss...........-1.0V to +7.0V Storage Temperature…..................................-65oC to +150oC Power Dissipation.................................................................1W Max Junction Temperature............................................+175°C Lead Temperature (soldering 10 seconds)...................+260oC Short Circuit Output Current...........................................50mA *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TC < 125oC; VCC = 5V +10%) DESCRIPTION Input High (Logic 1) Voltage CONDITIONS SYM MIN MAX VIH 2.2 Vcc+1.0V V 1 VIL -0.5 0.8 V 1, 2 0V < VIN < VCC ILI -10 10 µA Outputs Disabled 0V < VOUT < VCC ILO -10 10 µA Output High Voltage IOH = -4.0mA VOH 2.4 --- V 1 Output Low Voltage IOL = 8.0mA VOL --- 0.4 V 1 Input Low (Logic 0) Voltage Input Leakage Current Output Leakage Current UNITS NOTES CONDITIONS SYM -12 -15 MAX -20 -25 -35 Power Supply Current: Operating CE\ < VIL; VCC = MAX Output Open Icc 140 125 110 100 90 mA Power Supply Current: Standby CE\ > VIH; VCC = MAX ISBT1 45 41 36 33 30 mA ISBT2 25 25 25 25 25 mA ISBC2 5 5 5 5 5 mA SYM MAX UNITS NOTES CI 6 pF 4 CO 7 pF 4 PARAMETER f = 1/tRC (MIN) Hz UNITS NOTES 3 CE\ > VIH; All Other Inputs < VIL or > VIH, VCC = MAX f = 0 Hz CE\ > (VCC -0.2); VCC = MAX All Other Inputs < 0.2V or > (VCC - 0.2V), f = 0 Hz CAPACITANCE DESCRIPTION Input Capacitance Output Capacitance MT5C6404 Rev. 1.0 9/01 CONDITIONS o TA = 25 C, f = 1MHz Vcc = 5V Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 3 SRAM MT5C6404 Austin Semiconductor, Inc. ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Note 5) (-55oC < TC < 125oC; VCC = 5V +10%) DESCRIPTION READ CYCLE READ cycle time Address access time Chip Enable access time Output hold from address change Chip Enable to output in Low-Z Chip disable to output in High-Z Chip Enable to power-up time Chip disable to power-down time WRITE CYCLE WRITE cycle time Chip Enable to end of write Address valid to end of write Address setup time Address hold from end of write WRITE pulse width Data setup time Data hold time Write disable to output in Low-Z Write Enable to output in High-Z MT5C6404 Rev. 1.0 9/01 -12 -15 -20 -25 -35 SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES tRC tAA tACE tOH tLZCE tHZCE tPU tPD 12 tWC tCW tAW tAS tAH tWP tDS tDH 12 10 10 0 0 10 7 0 2 0 tLZWE tHZWE 15 12 10 2 2 20 15 13 2 2 7 0 2 2 8 0 12 6 2 2 0 7 8 15 ns ns ns ns ns ns ns ns ns ns 2 2 0 15 0 25 25 20 20 0 0 20 12 0 2 0 35 ns ns ns ns ns ns ns ns 35 25 12 20 20 15 15 0 0 15 10 0 2 0 35 25 20 10 15 15 12 12 0 0 12 8 0 2 0 25 20 15 10 35 25 25 0 0 25 15 0 2 0 7 6, 7 7 6, 7 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 4 SRAM MT5C6404 Austin Semiconductor, Inc. +5V AC TEST CONDITIONS +5V 480 Input pulse levels ...................................... Vss to 3.0V Input rise and fall times ......................................... 5ns Input timing reference levels ................................ 1.5V Output reference levels ....................................... 1.5V Output load ................................. See Figures 1 and 2 480 Q 30pF 255 Q Fig. 1 Output Load Equivalent NOTES 5 pF 255 Fig. 2 Output Load Equivalent 7. At any given temperature and voltage condition, tHZCE is less than tLZCE, and tHZWE is less than tLZWE. 8. WE\ is HIGH for READ cycle. 9. Device is continuously selected. Chip enable is held in its active state. 10. Address valid prior to, or coincident with, latest occurring chip enable. 11. tRC = READ Cycle Time. 12. Chip enable (CE\) and write enable (WE\) can initiate and terminate a WRITE cycle. 1. 2. 3. All voltages referenced to VSS (GND). -3V for pulse width < 20ns ICC is dependent on output loading and cycle rates. The specified value applies with the outputs unloaded, and f = 1 Hz. t RC (MIN) 4. This parameter is sampled. 5. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. 6. tHZCE and tHZWE are specified with CL = 5pF as in Fig. 2. Transition is measured ±500mV typical from steady state voltage, allowing for actual tester RC time constant. DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only) CONDITIONS DESCRIPTION VCC for Retention Data Data Retention Current SYM MIN MAX UNITS VDR 2 --- V NOTES CE\ > (VCC - 0.2V) VCC = 2V ICCDR --- 300 µA VIN > (VCC - 0.2V) or < 0.2V VCC = 3V ICCDR --- 500 µA tCDR 0 --- ns 4 tR tRC --- ns 4, 11 Chip Deselect to Data Retention Time Operation Recovery Time LOW Vcc DATA RETENTION WAVEFORM DATA RETENTION MODE VCC 4.5V VDR > 2V t CDR CE\ VIH VIL 1234 123456789 123 123456789 123 1234 123456789 123 1234 123456789 123 1234 4.5V tR VDR 12345678 1234 123 12345678 1234 123 12345678 1234 123 12345678 1234 123 123 123 123 123 DON’T CARE 1234 1234 1234 1234UNDEFINED MT5C6404 Rev. 1.0 9/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 5 SRAM Austin Semiconductor, Inc. MT5C6404 READ CYCLE NO. 1 8, 9 READ CYCLE NO. 2 7, 8, 10 123 123 123DON’T CARE 12345 12345 12345 UNDEFINED 12345 12345 MT5C6404 Rev. 1.0 9/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 6 SRAM Austin Semiconductor, Inc. MT5C6404 WRITE CYCLE NO. 1 12 (Chip Enabled Controlled) WRITE CYCLE NO. 2 7, 12, 13 (Write Enabled Controlled) 123 123 123 123 DON’T CARE 1234 1234 1234 1234 UNDEFINED MT5C6404 Rev. 1.0 9/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 7 SRAM MT5C6404 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #105 (Package Designator C) SMD 5962-86859, Case Outline T SMD 5962-89692, Case Outline X S D S2 A Q L1 E L S1 b1 e b Pin 1 E1 c SYMBOL A b b1 c D E E1 e L L1 Q S S1 S2 SMD SPECIFICATIONS MIN MAX 0.100 0.200 0.014 0.023 0.030 0.060 0.008 0.015 1.050 1.260 0.260 0.310 0.280 0.320 0.100 BSC 0.125 0.200 0.150 --0.015 0.060 0.030 0.065 0.005 --0.005 --- NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. * All measurements are in inches. MT5C6404 Rev. 1.0 9/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 8 SRAM MT5C6404 Austin Semiconductor, Inc. ORDERING INFORMATION EXAMPLE: MT5C6404C-25L/XT Device Number Package Speed Options** Process Type ns MT5C6404 C -12 L /* MT5C6404 C -15 L /* MT5C6404 C -20 L /* MT5C6404 C -25 L /* MT5C6404 C -35 L /* MT5C6404 C -45 L /* MT5C6404 C -55 L /* MT5C6404 C -70 L /* *AVAILABLE PROCESSES IT = Industrial Temperature Range XT = Extended Temperature Range 883C = Full Military Processing -40oC to +85oC -55oC to +125oC -55oC to +125oC ** OPTIONS L = 2V Data Retention/Low Power MT5C6404 Rev. 1.0 9/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 9 SRAM Austin Semiconductor, Inc. MT5C6404 ASI TO DSCC PART NUMBER CROSS REFERENCE* ASI Package Designator C SMD 5962-86859 ASI Part # MT5C6804C-35/883C MT5C6804C-35L/883C MT5C6804C-45/883C MT5C6804C-45L/883C MT5C6804C-55/883C MT5C6804C-55L/883C SMD Part # 5962-8685924TA 5962-8685923TA 5962-8685922TA 5962-8685921TA 5962-8685920TA 5962-8685919TA SMD 5962-89692 ASI Part # MT5C6804C-15/883C MT5C6804C-20/883C MT5C6804C-25/883C SMD Part # 5962-8969202XA 5962-8969204XA 5962-8969206XA * ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD. MT5C6404 Rev. 1.0 9/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 10