HA1127, HA1127P, HA1127FP 5 Transistor Arrays Pin Arrangement 503 HA1127, HA1127P, HA1127FP Absolute Maximum Ratings (Ta = 25°C) Item Symbol HA1127 Unit Collector base voltage VCBO 20 V Collector substrate voltage VCIO 20 V Collector emitter voltage VCEO 15 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Allowable collector power Allowable collector power PC* 1 PC 300 mW 750* 2 625* 3 mW Operating temperature Topr –55 to +125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. Allowable value per individual transistor. This is the allowable value up to Ta = 25°C. Derate at 3 mW/°C above that temperature. 2. Allowable value for the whole package. This is the allowable value up to Ta = 35°C for the HA1127P. Derate at 8.3 mW/°C above that temperature. 3. See page 51. 504 HA1127, HA1127P, HA1127FP Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Collector-base breakdown voltage V(BR)CBO 20 — — V IC = 10 µA, IE = 0 Collector-emitter breakdown voltage V(BR)CEO 15 — — V IC = 1 mA, R BE = Collector-substrate breakdown voltage V(BR)CIO 20 — — V IC = 10 µA, IE = 0, IB = 0 Emitter-base breakdown voltage V(BR)EBO 5 — — V IE = 10 µA, IC = 0 Collector cutoff current ICBO — 0.002 40 nA VCB = 10 V, IE = 0 ICEO — — 0.5 µA VCE = 10 V, R BE = Collector-emitter saturation voltage VCE(sat) — 0.17 — V IC = 10 mA, IB = 1 mA Base-emitter voltage VBE — 0.72 — V VCE = 3 V — 0.80 — V DC current amplification ratio hFE 40 140 — — 120 — Gain-bandwidth product fT — 460 — MHz VCE = 3 V, IC = 3 mA Collector output capacitance Cob — 1.7 — pF VCB = 3 V, IE = 0, f = 1 MHz Emitter input capacitance Cin — 2.0 — pF VCB = 3 V, IE = 0, f = 1 MHz Switching time ton — 35 — ns VCC = 10 V, IC = 10IB1 = –10IB2 = 10 mA toff — 130 — ns tstg — 75 — ns IC = 1 mA IC = 10 mA VEE = 3 V IC = 1 mA IC = 10 mA 505 HA1127, HA1127P, HA1127FP 506 HA1127, HA1127P, HA1127FP 507 HA1127, HA1127P, HA1127FP 508 HA1127, HA1127P, HA1127FP 509