NL27WZ32 Dual 2-Input OR Gate The NL27WZ32 is a high performance dual 2−input OR Gate operating from a 1.65 V to 5.5 V supply. Features • • • • • • • • • • Extremely High Speed: tPD 2.5 ns (typical) at VCC = 5 V Designed for 1.65 V to 5.5 V VCC Operation Over Voltage Tolerant Inputs LVTTL Compatible − Interface Capability With 5 V TTL Logic with VCC = 3 V LVCMOS Compatible 24 mA Balanced Output Sink and Source Capability Near Zero Static Supply Current Substantially Reduces System Power Requirements Replacement for NC7WZ32 Chip Complexity: FET = 120 These Devices are Pb−Free and are RoHS Compliant http://onsemi.com MARKING DIAGRAM 8 8 1 L4 M G G US8 US SUFFIX CASE 493 LR M G 1 = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) A1 1 8 *Date Code orientation may vary depending upon manufacturing location. VCC PIN ASSIGNMENT B1 Y2 GND 2 7 3 6 4 5 Y1 B2 A2 Pin Function 1 A1 2 B1 3 Y2 4 GND 5 A2 6 B2 7 Y1 8 VCC Figure 1. Pinout FUNCTION TABLE IEEE/IEC A1 B1 w1 A2 B2 Output Y=A+B Input Y1 A Y2 Figure 2. Logic Symbol B Y L L L L H H H L H H H H ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2012 April, 2012 − Rev. 8 1 Publication Order Number: NL27WZ32/D NL27WZ32 MAXIMUM RATINGS Symbol Value Units DC Supply Voltage −0.5 to +7.0 V VI DC Input Voltage −0.5 to +7.0 V VO DC Output Voltage −0.5 to +7.0 V IIK DC Input Diode Current VI < GND −50 mA IOK DC Output Diode Current VO < GND −50 mA IO DC Output Sink Current ±50 mA ICC DC Supply Current per Supply Pin ±100 mA IGND DC Ground Current per Ground Pin ±100 mA TSTG Storage Temperature Range VCC Parameter −65 to +150 °C TL Lead Temperature, 1 mm from Case for 10 Seconds 260 °C TJ Junction Temperature under Bias +150 °C qJA Thermal Resistance (Note 1) 250 °C/W PD Power Dissipation in Still Air at 85°C 250 mW MSL FR VESD ILatch−Up Moisture Sensitivity Level 1 Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in ESD Withstand Voltage Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) V > 2000 > 200 N/A Latch−Up Performance Above VCC and Below GND at 85°C (Note 5) mA ±500 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Units VCC Supply Voltage Operating Data Retention Only 1.65 1.5 5.5 5.5 VI Input Voltage (Note 6) 0 5.5 V VO Output Voltage (HIGH or LOW State) 0 5.5 V TA Operating Free−Air Temperature −40 +85 °C Dt/DV Input Transition Rise or Fall Rate VCC = 1.8 V ±0.15 V VCC = 2.5 V ±0.2 V VCC = 3.0 V ±0.3 V VCC = 5.0 V ±0.5 V 0 0 0 0 20 20 10 5 6. Unused inputs may not be left open. All inputs must be tied to a high−logic voltage level or a low−logic input voltage level. http://onsemi.com 2 V ns/V NL27WZ32 DC ELECTRICAL CHARACTERISTICS TA = +255C VCC (V) Min HIGH Level Input Voltage 1.65 to 1.95 0.75 VCC 0.7 VCC VIL LOW Level Input Voltage 1.65 to 1.95 2.3 to 5.5 VOH HIGH Level Output Voltage VIN = VIH Symbol Parameter VIH VOL IIN Condition Low−Level Output Voltage VIN = VIL Typ TA = −405C to +855C Max Min 0.75 VCC 0.7 VCC 0.3 VCC 1.65 2.3 3.0 4.5 1.55 2.2 2.9 4.4 1.65 2.3 3.0 4.5 1.55 2.2 2.9 4.4 IOH = −4 mA IOH = −8 mA IOH = −16 mA IOH = −24 mA IOH = −32 mA 1.65 2.3 3.0 3.0 4.5 1.29 1.9 2.4 2.3 3.8 1.52 2.15 2.8 2.68 4.2 1.20 1.9 2.4 2.3 3.8 IOL = 100 mA 1.65 2.3 3.0 4.5 0 0 0 0 0.1 0.1 0.1 0.1 IOH = 4 mA IOH = 8 mA IOH = 16 mA IOH = 24 mA IOH = 32 mA 1.65 2.3 3.0 3.0 4.5 0.08 0.1 0.15 0.22 0.22 0.24 0.3 0.4 0.55 0.55 Input Leakage Current VIN = 5.5 V or GND Power Off Leakage Current VIN = 5.5 V or VOUT = 5.5 V ICC Quiescent Supply Current VIN = 5.5 V or GND Units V 0.3 VCC IOH = −100 mA IOFF Max V V V 0 to 5.5 ±0.1 ±1.0 0 1.0 10 5.5 1.0 10 mA mA AC ELECTRICAL CHARACTERISTICS tR = tF = 3.0 ns VCC Symbol tPLH tPHL Parameter Propagation Delay (Figure 3 and 4) TA = 255C *405C v TA v 855C Condition (V) Min Typ Max Min Max Units RL = 1 MW, CL = 15 pF 1.8 ± 0.15 2.5 ± 0.2 2.0 1.0 8.0 3.5 9.5 5.8 2.0 1.0 10.5 6.2 ns RL = 1 MW, CL = 15 pF RL = 500 W, CL = 50 pF 3.3 ± 0.3 0.8 1.2 2.6 3.2 3.9 4.8 0.8 1.2 4.3 5.2 RL = 1 MW, CL = 15 pF RL = 500 W, CL = 50 pF 5.0 ± 0.5 0.5 0.8 1.9 2.5 3.1 3.7 0.5 0.8 3.3 4.0 CAPACITIVE CHARACTERISTICS Symbol Parameter Condition Typical Units CIN Input Capacitance VCC = 5.5 V, VI = 0 V or VCC 2.5 pF CPD Power Dissipation Capacitance (Note 7) 10 MHz, VCC = 3.3 V, VI = 0 V or VCC 10 MHz, VCC = 5.5 V, VI = 0 V or VCC 9 11 pF 7. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. http://onsemi.com 3 NL27WZ32 tf = 3 ns tf = 3 ns 90% INPUT A and B 50% VCC 90% 50% 10% 10% tPHL INPUT OUTPUT GND RL tPLH CL VOH OUTPUT Y 50% 50% A 1−MHz square input wave is recommended for propagation delay tests. VOL Figure 3. Switching Waveform Figure 4. Test Circuit DEVICE ORDERING INFORMATION Device Order Number NL27WZ32USG Package Shipping† US8 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NL27WZ32 PACKAGE DIMENSIONS US8 US SUFFIX CASE 493−02 ISSUE B −X− A 8 −Y− 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION “A” DOES NOT INCLUDE MOLD FLASH, PROTRUSION OR GATE BURR. MOLD FLASH. PROTRUSION AND GATE BURR SHALL NOT EXCEED 0.140 MM (0.0055”) PER SIDE. 4. DIMENSION “B” DOES NOT INCLUDE INTER−LEAD FLASH OR PROTRUSION. INTER−LEAD FLASH AND PROTRUSION SHALL NOT E3XCEED 0.140 (0.0055”) PER SIDE. 5. LEAD FINISH IS SOLDER PLATING WITH THICKNESS OF 0.0076−0.0203 MM. (300−800 “). 6. ALL TOLERANCE UNLESS OTHERWISE SPECIFIED ±0.0508 (0.0002 “). J DETAIL E B L 1 4 R G P S U C −T− SEATING PLANE D 0.10 (0.004) M H 0.10 (0.004) T K N R 0.10 TYP T X Y V M F DETAIL E SOLDERING FOOTPRINT* DIM A B C D F G H J K L M N P R S U V MILLIMETERS MIN MAX 1.90 2.10 2.20 2.40 0.60 0.90 0.17 0.25 0.20 0.35 0.50 BSC 0.40 REF 0.10 0.18 0.00 0.10 3.00 3.20 0_ 6_ 5_ 10 _ 0.23 0.34 0.23 0.33 0.37 0.47 0.60 0.80 0.12 BSC INCHES MIN MAX 0.075 0.083 0.087 0.094 0.024 0.035 0.007 0.010 0.008 0.014 0.020 BSC 0.016 REF 0.004 0.007 0.000 0.004 0.118 0.126 0_ 6_ 5_ 10 _ 0.010 0.013 0.009 0.013 0.015 0.019 0.024 0.031 0.005 BSC 3.8 0.15 0.50 0.0197 1.8 0.07 0.30 0.012 1.0 0.0394 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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