DMP3050LVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) Max ID Max TA = +25°C 50mΩ @ VGS = -10V -4.5A 75mΩ @ VGS = -4.5V -3.7A BVDSS Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Applications Backlighting Power Management Functions DC-DC Converters Case: TSOT26 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.013grams (Approximate) D TSOT26 D 1 6 D D 2 5 D G 3 4 S G S Top View Device Schematic Equivalent Circuit Ordering Information (Note 4) Part Number DMP3050LVT-7 Notes: Case TSOT26 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information G64 Date Code Key Year Code Month Code 2011 Y Jan 1 ~ ~ Feb 2 DMP3050LVT Document number: DS35748 Rev. 4 - 2 2016 D Mar 3 Apr 4 G64 = Product Type Marking Code YM = Date Code Marking Y or Y= Year (ex: D = 2016) M = Month (ex: 9 = September) YM NEW PRODUCT -30V Features 2017 E May 5 2018 F Jun 6 1 of 7 www.diodes.com 2019 G Jul 7 Aug 8 2020 H Sep 9 2021 I Oct O 2022 J Nov N Dec D April 2016 © Diodes Incorporated DMP3050LVT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage (Note 5) Continuous Drain Current (Note 6) VGS = -10V Steady State t<10s TA = +25C TA = +70C TA = +25C TA = +70C Value -30 ±25 -4.5 -3.5 ID A -5.2 -4.1 -2 -25 ID Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Unit V V IS IDM A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Symbol TA = +25°C TA = +70°C Steady State t<10s Steady State Value 1.6 1.0 78 49 13 -55 to +150 PD RJA RJC TJ, TSTG Unit W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 - - -1 ±100 V μA nA VGS = 0V, ID = -250μA VDS = -30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) |Yfs| VSD 36 56 7.2 -0.7 -2.0 50 75 -1.0 V Static Drain-Source On-Resistance -1.0 - VDS = VGS, ID = -250μA VGS = -10V, ID = -4.5A VGS = -4.5V, ID = -3A VDS = -5V, ID = -5A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF - 620 83 62 10.8 5.1 10.5 1.8 1.9 6.8 4.9 28.4 12.4 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: m S V pF pF pF nC nC nC nC ns ns ns ns Test Condition VDS = -15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VDS = -15V, ID = -6A VDD = -15V, VGS = -10V, Rg = 6Ω, ID = -1A 5. AEC-Q101 VGS maximum is ±20V. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMP3050LVT Document number: DS35748 Rev. 4 - 2 2 of 7 www.diodes.com April 2016 © Diodes Incorporated DMP3050LVT 20 VGS = -10V 20 VGS = -5.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 15 VGS = -4.5V VGS = -4.0V 10 VGS = -3.5V 5 15 10 5 TA = 150C VGS = -3.0V TA = 125C VGS = -2.5V 0 0.5 1.0 1.5 2.0 2.5 -V DS, DRAIN -SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics RDS(ON),DRAIN-SOURCE ON-RESISTANCE () 0.12 0.10 0.08 0.06 0.04 0.02 0 0 3.0 0 4 8 12 16 -ID, DRAIN SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage TA = 25C TA = -55C 0 1 2 3 4 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 5 0.08 0.06 0.04 0.02 20 0.10 0 3 4 5 6 7 8 9 -VGS, GATE SOURCE VOLTAGE (V) Fig. 4 Typical On-Resistance vs. Drain Current and Gate Voltage 10 1.7 VGS = -4.5V 0.08 0.06 TA = 150 C TA = 125 C TA = 85C 0.04 T A = 25C TA = -55C 0.02 0 TA = 85C 0.10 R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) R DS(ON),DRAIN-SOURCE ON-RESISTANCE () 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE() NEW PRODUCT VDS = -5.0V 0 5 10 15 -I D, DRAIN SOURCE CURRENT (A) Fig. 5 Typical On-Resistance vs. Drain Current and Temperature DMP3050LVT Document number: DS35748 Rev. 4 - 2 20 3 of 7 www.diodes.com 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature April 2016 © Diodes Incorporated 2.0 0.08 VGS = -4.5V ID = -5A 0.06 1.8 VGS(TH), GATE THRESHOLD VOLTAGE(V) RDS(on), DRAIN-SOURCE ON-RESISTANCE () 0.10 0.04 VGS = -10V ID = -10A 0.02 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -50 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 C)) TA, AMBIENT TEMPERATURE (° (癈 Fig. 8 Gate Threshold Variation vs. Ambient Temperature 10,000 20 CT, JUNCTION CAPACITANCE (pF) f = 1MHz -IS, SOURCE CURRENT (A) 16 12 8 4 0 0.4 1,000 Ciss Coss 100 Crss 10 0.6 0.8 1.0 1.2 1.4 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current 10 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Junction Capacitance 30 100 RDS(ON) Limited 8 ID, DRAIN CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT DMP3050LVT 6 4 PW =100µs 10 1 0.1 2 PW =1ms PW =10ms PW =100ms PW =1s TJ(Max) = 150℃ TC = 25℃ Single Pulse DUT on 1*MRP Board VGS= -10V PW =10s DC 0.01 0 0 2 4 6 8 10 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMP3050LVT Document number: DS35748 Rev. 4 - 2 12 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 Figure 12. SOA, Safe Operation Area 4 of 7 www.diodes.com April 2016 © Diodes Incorporated DMP3050LVT r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t) = r(t) * RθJA RθJA = 101℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) 10 100 1000 Figure 13. Transient Thermal Resistance DMP3050LVT Document number: DS35748 Rev. 4 - 2 5 of 7 www.diodes.com April 2016 © Diodes Incorporated DMP3050LVT Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TSOT26 NEW PRODUCT D e1 01(4x) E1/2 E/2 E1 c E Gauge Plane 0 L e L2 01(4x) b A2 A1 A Seating Plane Seating Plane TSOT26 Dim Min Max Typ A 1.00 A1 0.010 0.100 A2 0.840 0.900 D 2.800 3.000 2.900 E 2.800 BSC E1 1.500 1.700 1.600 b 0.300 0.450 c 0.120 0.200 e 0.950 BSC e1 1.900 BSC L 0.30 0.50 L2 0.250 BSC θ 0° 8° 4° θ1 4° 12° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TSOT26 C Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 Y1 Y X DMP3050LVT Document number: DS35748 Rev. 4 - 2 6 of 7 www.diodes.com April 2016 © Diodes Incorporated DMP3050LVT IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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