LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon MMBT6517LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 350 Vdc Collector–Base Voltage V CBO 350 Vdc Emitter–Base Voltage V 5.0 Vdc EBO Base Current IB 250 mAdc Collector Current — Continuous IC 500 mAdc CASE 318–08, STYLE 6 SOT–23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW RθJA PD 1.8 556 300 mW/°C °C/W mW RθJA TJ , Tstg 2.4 417 –55 to +150 mW/°C °C/W °C DEVICE MARKING MMBT6517LT1 = 1Z ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit V (BR)CEO 350 — Vdc V (BR)CBO 350 — Vdc V 6.0 — Vdc I CBO — 50 nAdc I EBO — 50 nAdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 1.0 mAdc ) Collector–Base Breakdown Voltage (I C = 100 µAdc ) Emitter–Base Breakdown Voltage (I E = 10 µAdc ) Collector Cutoff Current ( V CB = 250Vdc ) Emitter Cutoff Current ( V EB = 5.0Vdc ) (BR)EBO 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. M23–1/5 LESHAN RADIO COMPANY, LTD. MMBT6517LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 20 30 30 20 15 — — 200 200 — — — — — 0.30 0.35 0.50 1.0 — — — 0.75 0.85 0.90 — 2.0 Vdc 40 200 MHz — 6.0 pF — 80 pF ON CHARACTERISTICS DC Current Gain (I C = 1.0 mAdc, V CE = 10 Vdc) (I C = 10mAdc, V CE = 10 Vdc) (I C = 30 mAdc, V CE = 10 Vdc) (I C = 50 mAdc, V CE = 10 Vdc) (I C = 100 mAdc, V CE = 10 Vdc) Collector–Emitter Saturation Voltage(3) (I C = 10mAdc, I B = 1.0mAdc) (I C = 20 mAdc, I B = 2.0 mAdc) (I C = 30 mAdc, I B = 3.0mAdc) (I C = 50 mAdc, I B = 5.0 mAdc) Base – Emitter Saturation Voltage (I C = 10mAdc, I B = 1.0mAdc,) (I C = 20mAdc, I B = 2.0mAdc,) (I C = 30mAdc, I B = 3.0mAdc,) Base–Emitter On Voltage (I C = 100mAdc, V CE = 10Vdc) hFE — VCE(sat) Vdc Vdc VBE(sat) V BE(on) SMALL–SIGNAL CHARACTERISTICS Current Gain–Bandwidth Product fT (V CE = 20 Vdc, I C = 10mAdc, f = 20 MHz) Collector –Base Capacitance C cb (V CB = 20 Vdc, f = 1.0 MHz) Emitter –Base Capacitance C eb (V EB=0.5 Vdc, f = 1.0 MHz) 3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%. M23–2/5 LESHAN RADIO COMPANY, LTD. f T, CURRENT– GAIN — BANDWIDTH PRODUCT (MHz) MMBT6517LT1 200 T J = 125°C V CE = 10 V h FE , DC CURRENT GAIN 100 25°C 70 50 –55°C 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 70 50 T J = 25°C V CE = 20 V 30 f = 20 MHz 20 10 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 1. DC Current Gain Figure 2. Current–Gain — Bandwidth Product 1.4 100 1.2 1.0 0.8 V BE(sat) @ I C /I B = 10 0.6 V BE(on) @ V CE = 10 V 0.4 V CE(sat) @ I C /I B = 10 0.2 V CE(sat) @ I C /I B = 5.0 R θV , TEMPERATURE COEFFICIENTS (mV/°C) 2.5 T J = 25°C 0 IC 2.0 IB = 10 1.5 25°C to 125°C 1.0 0.5 R θVC for V CE(sat) 0 –55°C to 25°C –0.5 –1.0 –55°C to 125°C –1.5 R θVC for V BE –2.0 –2.5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 3. “On” Voltages Figure 4. Temperature Coefficients 70 100 100 70 T J = 25°C 50 C eb 30 C, CAPACITANCE (pF) V, VOLTAGE (VOLTS) 100 20 10 7.0 5.0 C cb 3.0 2.0 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 V R , REVERSE VOLTAGE (VOLTS) Figure 5. Capacitance M23–3/5 LESHAN RADIO COMPANY, LTD. MMBT6517LT1 10k 1.0k 700 7.0k V CE(off) = 100 V 500 t d @ V BE(off) = 2.0 V 5.0k I C /I B = 5.0 T J = 25°C 300 ts 3.0k 2.0k 200 V CE(off) = 100 V I C /I B = 5.0 t, TIME (ns) t, TIME (ns) tr 100 70 50 30 1.0k tf I B1 = I B2 T J = 25°C 700 500 300 200 20 100 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 6. Turn–On Time Figure 7. Turn–Off Time 70 100 +V CC V CC ADJUSTED FOR V CE(off) = 100 V +10.8 V 2.2 k 50 Ω SAMPLING SCOPE 20 k 50 1.0 k 1/2MSD7000 –9.2 V PULSE WIDTH ~ ~ 100 ms t r , t f < 5.0 ns (ADJUST FOR V (BE)off = 2.0 V) APPROXIMATELY –1.35 V DUTY CYCLE <1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES Figure 8. Switching Time Test Circuit RESISTANCE (NORMALIZED) 1.0 0.7 D = 0.5 0.5 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 SINGLE PULSE 0.07 0.05 Z qJC(t) = r(t) • R qJC T J(pk) – T C = P (pk) Z qJC(t) Z qJA(t) = r(t) • R qJA T J(pk) – T A = P (pk) Z qJA(t) 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k t, TIME (ms) Figure 9. Thermal Response M23–4/5 LESHAN RADIO COMPANY, LTD. MMBT6517LT1 FIGURE A t P PP t PP 1 1/f DUTY CYCLE =t 1 f = t1 tP PEAK PULSE POWER = P P Design Note: Use of Transient Thermal Resistance Data M23–5/5