< IGBT MODULES > CM200DY-34A HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .............….......................… 200A Collector-emitter voltage V CES ......................… 1 7 0 0 V Maximum junction temperature T j m a x .............. 1 5 0 °C ●Flat base Type ●Copper base plate ●RoHS Directive compliant ●UL Recognized under UL1557, File E323585 Dual (Half-Bridge) APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm INTERNAL CONNECTION Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 Di1 C2E1 Tr2 E2 Di2 Publication Date : June.2011 1 Tr1 C1 G1 E1 (Es1) Division of Dimension E2 G2 (Es2) Tolerance otherwise specified < IGBT MODULES > CM200DY-34A HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified) Rating Unit VCES Symbol Collector-emitter voltage G-E short-circuited 1700 V VGES Gate-emitter voltage C-E short-circuited ±20 V IC Item Conditions DC, TC=109 °C Collector current ICRM Ptot IE IERM (Note.1) 200 (Note.3) 400 Pulse, Repetitive Total power dissipation (Note.1) (Note.2, 4) Emitter current TC=25 °C (Note.2, 4) TC=25 °C (Note.2, 4) Pulse, Repetitive A 1980 W 200 (Note.3) A 400 Tj Junction temperature - -40 ~ +150 Tstg Storage temperature - -40 ~ +125 Visol Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 3500 °C V ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified) Symbol Item Limits Conditions Min. Typ. Max. Unit ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1.0 mA IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 2.0 μA VGE(th) Gate-emitter threshold voltage IC=20 mA, VCE=10 V V VCEsat Collector-emitter saturation voltage Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance QG Gate charge td(on) Turn-on delay time tr Rise time td(off) Turn-off delay time tf Fall time IC=200 A (Note.5) , VGE=15 V 5.5 7.0 8.5 T j =25 °C - 2.2 2.8 T j =125 °C - 2.45 - - - 49.4 VCE=10 V, G-E short-circuited - - 5.6 - - 1.06 VCC=1000 V, IC=200 A, VGE=15 V - 1330 - - - 550 VCC=1000 V, IC=200 A, VGE=±15 V, RG=2.4 Ω, Inductive load - - 190 - - 750 - - 350 V nF nC ns VEC (Note.1) Emitter-collector voltage IE=200 A - 2.3 3.0 V trr (Note.1) Reverse recovery time VCC=1000 V, IE=200 A, VGE=±15 V, - - 450 ns Qrr (Note.1) μC (Note.5) , G-E short-circuited Reverse recovery charge RG=2.4 Ω, Inductive load - 20 - Eon Turn-on switching energy per pulse VCC=1000 V, IC=IE=200 A, - 94.5 - Eoff Turn-off switching energy per pulse VGE=±15 V, RG=2.4 Ω, T j =125 °C, - 58.7 - Reverse recovery energy per pulse Inductive load - 50.7 - mJ Internal gate resistance Per switch, T c =25 °C - 3.0 - Ω Err (Note.1) rg mJ THERMAL RESISTANCE CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)D Rth(c-s) Item Thermal resistance (Note.2) Contact thermal resistance Limits Conditions (Note.2) Min. Typ. Max. Unit Junction to case, per IGBT - - 0.063 K/W Junction to case, per FWDi - - 0.11 K/W - 0.02 - K/W Case to heat sink, per 1/2 module, Thermal grease applied (Note.6) MECHANICAL CHARACTERISTICS Symbol Mt Ms m ec Item Mounting torque Weight Flatness of base plate Limits Conditions Min. Typ. Max. Unit Main terminals M 6 screw 3.5 4.0 4.5 N·m Mounting to heat sink M 6 screw 3.5 4.0 4.5 N·m - 400 - g -100 - +100 μm On the centerline X, Y Publication Date : June.2011 2 (Note.7) < IGBT MODULES > CM200DY-34A HIGH POWER SWITCHING USE INSULATED TYPE -:Concave +:Convex Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). 2. Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink just under the chips. Refer to the figure of chip location. The heat sink thermal resistance should measure just under the chips. 3. Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating. 4. Junction temperature (T j ) should not increase beyond T j m a x rating. 5. Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit. 6. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K). 7. Base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure. X 3 mm mounting side Y -:Concave mounting side mounting side +:Convex RECOMMENDED OPERATING CONDITIONS Symbol VCC Item (DC) Supply voltage Conditions Applied across C1-E2 Limits Min. Typ. Max. - 1000 1100 Unit V VGEon Gate (-emitter drive) voltage Applied across G1-Es1/G2-Es2 13.5 15.0 16.5 V RG External gate resistance Per switch 2.4 - 24 Ω CHIP LOCATION (Top view) Dimension in mm, tolerance: ±1 mm Tr1/Tr2: IGBT, Di1/Di2: FWDi Publication Date : June.2011 3 < IGBT MODULES > CM200DY-34A HIGH POWER SWITCHING USE INSULATED TYPE TEST CIRCUIT AND WAVEFORMS C1 VGE=15 V IC G1 V Es1 VGE =15 V Tr1 Shortcircuited IE E2 Es2 E2 Di1 Di2 V C E s a t test circuit VEC test circuit ～ vGE iE 90 % Q rr =0.5×I rr ×t r r iE 0V 0 t Load t rr IE + VCC iC t 0A ～ -V GE C2E1 G2 Es2 Tr2 V Es1 G2 E2 Es2 E2 Es2 G1 C2E1 Shortcircuited IC G2 G2 IE Es1 V C2E1 C1 Shortcircuited G1 C2E1 Shortcircuited C1 Shortcircuited G1 Es1 V C1 Shortcircuited 90 % RG +V GE VGE 0V Irr VCE iC -V GE 0A tr t d (o n ) tf t d( o ff) t Switching characteristics test circuit and waveforms t r r , Q r r test waveform iE vCE iC iC ICM 0.5×I r r 10% VCC ICM VCC IEM vEC vCE t 0A 0 0.1×ICM 0.1×VCC t 0 0.1×VCC 0.02×ICM ti ti IGBT Turn-on switching energy IGBT Turn-off switching energy t VCC 0V t ti FWDi Reverse recovery energy Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing) Publication Date : June.2011 4 < IGBT MODULES > CM200DY-34A HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) T j =25 °C 400 VGE=15 V VGE=20 V 4 13 V 12 V COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR CURRENT IC (A) 15 V 300 11 V 200 10 V 100 T j =125 °C 3 T j =25 °C 2 1 9V 8V 0 0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE 10 0 VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 200 300 400 IC (A) FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) T j =25 °C G-E short-circuited 10 1000 IC=400 A IC=200 A IE (A) T j =125 °C IC=80 A EMITTER CURRENT 8 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 100 COLLECTOR CURRENT 6 4 100 T j =25 °C 2 0 5 10 15 GATE-EMITTER VOLTAGE 10 0.5 20 VGE (V) 1.0 1.5 2.0 2.5 3.0 EMITTER-COLLECTOR VOLTAGE Publication Date : June.2011 5 3.5 VEC (V) 4.0 < IGBT MODULES > CM200DY-34A HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=1000 V, VGE=±15 V, RG=2.4 Ω, T j =125 °C, INDUCTIVE LOAD HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=1000 V, IC=200 A, VGE=±15 V, T j =125 °C, INDUCTIVE LOAD 1000 10000 tf td(off) SWITCHING TIME SWITCHING TIME (ns) (ns) td(on) 100 tr 10 td(off) td(on) 1000 tr tf 100 10 100 1000 COLLECTOR CURRENT 1 IC (A) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=1000 V, VGE=±15 V, RG=2.4 Ω, T j =125 °C INDUCTIVE LOAD, PER PULSE 100 10 EXTERNAL GATE RESISTANCE 100 RG (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=1000 V, IC/IE=200 A, VGE=±15 V, T j =125 °C INDUCTIVE LOAD, PER PULSE 1000 1000 Eon 100 Err 1 100 Eon 100 Eoff Err 10 10 10 SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) 10 REVERSE RECOVERY ENERGY (mJ) SWITCHING ENERGY (mJ) Eoff 1 1000 10 EXTERNAL GATE RESISTANCE COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) Publication Date : June.2011 6 100 RG (Ω) < IGBT MODULES > CM200DY-34A HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) VCC=1000 V, VGE=±15 V, RG=2.4 Ω, T j =25 °C, INDUCTIVE LOAD CAPACITANCE CHARACTERISTICS (TYPICAL) G-E short-circuited, T j =25 °C 100 1000 Cies CAPACITANCE (nF) 10 t r r (ns), I r r (A) trr Coes 100 Irr 1 Cres 0.1 10 0.1 1 10 100 COLLECTOR-EMITTER VOLTAGE 10 EMITTER CURRENT TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) IC=200 A, T j =25 °C Single pulse, TC=25°C R t h ( j - c ) Q =0.063 K/W, R t h ( j - c ) D =0.11 K/W 1 Zth(j-c) NORMALIZED TRANSIENT THERMAL IMPEDANCE VCC=1000 V VGE (V) 1000 IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE 100 VCE (V) 15 VCC=800 V 10 5 0 0 500 1000 GATE CHARGE 1500 2000 QG (nC) 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 TIME (S) Publication Date : June.2011 7 0.1 1 10 < IGBT MODULES > CM200DY-34A HIGH POWER SWITCHING USE INSULATED TYPE Keep safety first in your circuit designs! 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