MMBD1009 MMBD1011 Surface Mount Switching Diode P b Lead(Pb)-Free SWITCHING DIODE 200m AMPERES 75 VOLTS Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr≤4ns *Small Outline Surface Mount SOT-23 Package 3 1 2 SOT-23 SOT-23 Outline Dimensions Unit:mm A B T OP V I E W E G C D H K J WEITRON http://www.weitron.com.tw L M 1/4 Dim Min Max A B C D E G H J K L M 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 22-Sep-05 MMBD1009 MMBD1011 Maximum Ratings Characteristic Symbol Value Unit Reverse Voltage VR 75 Volts Average Forward Current IO 200 mAdc Peak Forward Surge Current IFM 500 mAdc Thermal Characteristics Max Unit 225 1.8 556 mW mW/ ˚C RθJA 300 2.4 417 mW mW/ ˚C ˚C/W TJ, Tstg -55 to + 150 ˚C Symbol Characteristic Total Device Dissipation FR-5 Board *1, TA=25˚C Derate Above 25˚C PD Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate*2 TA=25˚C Derate Above 25˚C Thermal Resistance Junction to Ambient Junction and Storage Temperature RθJA PD ˚C/W *1 ER-5=1.0x0.75x0.062 in *2 Alumina=0.4x0.3x0.024 in 99.5% Alumina Electrical Characteristics Characteristic (TA=25˚C Unless Otherwise Note) (Each Diode) Symbol Min Max Unit VBR 75 - Vdc IR - 0.1 µAdc Off Characteristics Reverse Breakdown Voltage IBR=100µAdc Reverse Voltage Leakage Current VR=50V WEITRON http://www.weitron.com.tw 2/4 22-Sep-05 MMBD1009 MMBD1011 Off Characteristic Characteristic Diode Capacition VR=0, f=1.0MHz Symbol Min CD - 4.0 PF VF - 1000 1000 1200 mVdc trr - 4.0 nS Forward Voltage IF=10 mAdc IF=50 mAdc IF=100 mAdc Reverse Recovery Time (Figure 1.) IF=IR=10 mAdc, VR=5.0Vdc IR(REC)=1.0 mAdc, RL=100 Max Unit Device Marking Marking Item Eqivalent Circuit diagram MMBD1009 A2 3 1 2 MMBD1011 A6 3 1 2 Figure 1. Recovery Time Equivalent Test Circuit 820 +10V 2.0K IF tp tr 0.1µF 100 µH t IF trr 10% 0.1µF D.U.T. 50 OUTPUT PULSE GENERATOR 90% 50 INPUT SAMPLING OSCILLOSCOPE Notes:1. A 2.0 k t VR INPUT SIGNAL IR IR(REC)=1.0mA OUTPUT PULSE (IF=IR=10mA, MEASURED AT IR(REC)=1.0mA variable resistor for a Forward Current (IF) 0f 10 mA 2. Input pules is adjusted so IR(peak) is equal to 10 mA 3. tp» trr WEITRON http://www.weitron.com.tw 3/4 22-Sep-05 MMBD1009 MMBD1011 10 TA=150 C TA=85 C IA. REVERSE CURRENT (µA) IF, FORWARD CURRENT (mA) 100 TA=-40 C 10 TA=25 C 1.0 TA=125 C 1.0 TA=85 C 0.1 TA=55 C 0.01 TA=25 C 0.1 0.001 0.2 0.4 0.6 0.8 1.0 1.2 0 20 30 40 50 VR. REVERSE VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS) FIGURE 3. LEAKAGE CURRENT FIGURE 2 .FORWARD VOLTAGE 1.0 CD. DIODE CAPACITANCE (PF) 1.75 CD. DIODE CAPACITANCE (PF) 10 1.50 1.25 1.00 0.75 0 2.0 4.0 6.0 8.0 0.9 0.8 0.7 0.6 0 2 4 6 8 VR. REVERSW VOLTAGE (VOLTS) VR. REVERSE VOLTAGE (VOLTS) FIGURE 4. CAPACITANCE(2836) FIGURE 5. CAPACITANCE(2838) CD. DIODE CAPACITANCE (PF) 0.68 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 8.0 VR. REVERSW VOLTAGE (VOLTS) FIGURE 6. CAPACITANCE(7000) WEITRON http://www.weitron.com.tw 4/4 22-Sep-05