BCY89 MECHANICAL DATA Dimensions in mm NPN SILICON PLANAR DUAL TRANSISTORS 1 2 .7 m in . 5 .3 m a x 4 .8 m a x 0 .5 1 m a x 2 b 1 b APPLICATIONS 1 c 4 5 o 1 .1 6 m a x • Differential Amplifier • General purpose applications. 1 .1 7 m a x 2 .5 4 1 e 2 e 2 c 5 .8 m a x TO71 PACKAGE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage 45V VCEO Collector – Emitter Voltage 40V PTOT Total Power Dissipation TJ Junction Temperature Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 150mW 175°C Prelim.5/00 BCY89 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions ICBO Collector Cut-Off Current VCB = 20V hFE DC Current Gain IC = 50mA VCB = 10V 100 450 IC = 10mA 100 600 fT Transistion Frequency -IE = 50mA VCB = 10V VCB = 10V 10 VCB = 10V 50 Cc Collector-Capacitance at f = 1MHz IE = Ie = 0 VCB = 10V IC = 50µA VCE = 5V IC = 50µA VCE = 5V f =200Hz RS = Opt. NF Noise Figure -IE = 50mA Min. IE = 0 Typ. Max. Unit 10 f =10Hz to15Hz RS = 10kW nA — MHz 3.5 pF 4 dB 5 MATCHING CHARACTERISTICS Parameter |1C/|2C| Ratio of Collector Currents V1B-1E = V2B-2E Test Conditions V1B-1E = V2B-2E Unit 0.67-1.5 |V1B-1E-V2B-2E| Difference between Base-Emitter Voltages |1C = |2C| 10mV ||1B-|2B| Difference between Base Currents V1B-1E = V2B-2E 300nA h1FE/h2FE D.C. Current Gain Ration |1C = |2C| Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk — Prelim.5/00