Seme LAB BCY89 Npn silicon planar dual transistor Datasheet

BCY89
MECHANICAL DATA
Dimensions in mm
NPN SILICON PLANAR DUAL
TRANSISTORS
1 2 .7
m in .
5 .3
m a x
4 .8 m a x
0 .5 1
m a x
2 b
1 b
APPLICATIONS
1 c
4 5
o
1 .1 6 m a x
• Differential Amplifier
• General purpose applications.
1 .1 7 m a x
2 .5 4
1 e
2 e
2 c
5 .8 m a x
TO71 PACKAGE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
45V
VCEO
Collector – Emitter Voltage
40V
PTOT
Total Power Dissipation
TJ
Junction Temperature
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
150mW
175°C
Prelim.5/00
BCY89
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
ICBO
Collector Cut-Off Current
VCB = 20V
hFE
DC Current Gain
IC = 50mA
VCB = 10V
100
450
IC = 10mA
100
600
fT
Transistion Frequency
-IE = 50mA
VCB = 10V
VCB = 10V
10
VCB = 10V
50
Cc
Collector-Capacitance at f = 1MHz
IE = Ie = 0
VCB = 10V
IC = 50µA
VCE = 5V
IC = 50µA
VCE = 5V
f =200Hz
RS = Opt.
NF
Noise Figure
-IE = 50mA
Min.
IE = 0
Typ. Max. Unit
10
f =10Hz to15Hz RS = 10kW
nA
—
MHz
3.5
pF
4
dB
5
MATCHING CHARACTERISTICS
Parameter
|1C/|2C|
Ratio of Collector Currents V1B-1E = V2B-2E
Test Conditions
V1B-1E = V2B-2E
Unit
0.67-1.5
|V1B-1E-V2B-2E| Difference between Base-Emitter Voltages
|1C = |2C|
10mV
||1B-|2B|
Difference between Base Currents
V1B-1E = V2B-2E
300nA
h1FE/h2FE
D.C. Current Gain Ration
|1C = |2C|
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
—
Prelim.5/00
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