isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUW90 DESCRIPTION ·High Current Capability ·Fast Switching Speed ·Low Saturation Voltage and High Gain APPLICATIONS Designed for use in high frequency and efficiency converters such as motor controllers and industrial equipment such as: ·Switching regulators ·Motor control ·High frequency and efficiency converters Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage (VBE= -1.5V) 250 V VCEO Collector-Emitter Voltage 125 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 4 A IBM Base Current-peak 6 A PC Collector Power Dissipation @TC=25℃ 125 W Tj Junction Temperature 175 ℃ -65~175 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.2 ℃/W isc website：www.iscsemi.cn 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUW90 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; IB= 0; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5.5A; IB= 0.35A 0.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 11A; IB= 1.1A 0.9 V Base-Emitter Saturation Voltage IC= 11A; IB= 1.1A 1.6 V ICER Collector Cutoff Current VCE= VCEV;RBE= 10Ω VCE= VCEX;RBE= 10Ω; TC=100℃ 1.0 5.0 mA ICEV Collector Cutoff Current VCE= VCEV; VBE= -1.5V VCE= VCEV; VBE= -1.5V;TC=100℃ 1.0 5.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA 1.0 μs 1.0 μs 0.3 μs VBE(sat) CONDITIONS MIN TYP. MAX UNIT 125 V 7 V Switching times; Resistive Load tr Rise Time ts Storage Time tf Fall Time isc website：www.iscsemi.cn IC= 15A; IB1= 1.8A; VCC= 100V; VBB= -5V; RB2= 1.3Ω; tp= 30μs 2