BVDSS = 800 V RDS(on) typ = 4.0 Ω HFS3N80 ID = 3.0 A 800V N-Channel MOSFET TO-220F FEATURES Originative New Design 11 2 Superior Avalanche Rugged Technology Robust Gate Oxide Technology 3 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Value Units 800 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 3.0* A Drain Current – Continuous (TC = 100℃) 1.9* A IDM Drain Current – Pulsed 12* A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 320 mJ IAR Avalanche Current (Note 1) 3.0 A EAR Repetitive Avalanche Energy (Note 1) 10.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25℃) - Derate above 25℃ 39 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds (Note 1) 0.31 W/℃ -55 to +150 ℃ 300 ℃ * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Typ. Max. RθJC Symbol Junction-to-Case Parameter -- 3.2 RθJA Junction-to-Ambient -- 62.5 Units ℃/W ◎ SEMIHOW REV.A0,Dec 2005 HFS3N80 Dec 2005 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 1.5 A -- 4.0 4.8 Ω VGS = 0 V, ID = 250 ㎂ 800 -- -- V ID = 250 ㎂, Referenced to25℃ -- 0.99 -- V/℃ VDS = 800 V, VGS = 0 V -- -- 1 ㎂ VDS = 640 V, TC = 125℃ -- -- 10 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 ㎁ -- 700 910 ㎊ -- 70 90 ㎊ -- 7 9 ㎊ -- 20 40 ㎱ -- 55 110 ㎱ -- 30 60 ㎱ -- 40 80 ㎱ -- 17 22 nC -- 4.5 -- nC -- 7.5 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 400 V, ID = 3.0 A, RG = 25 Ω (Note 4,5) VDS = 640V, ID = 3.0 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 3.0 ISM Pulsed Source-Drain Diode Forward Current -- -- 12 VSD Source-Drain Diode Forward Voltage IS = 3.0 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time -- 650 -- ㎱ Qrr Reverse Recovery Charge IS = 3.0 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 5.2 -- μC A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=67mH, IAS=3.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤3.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,Dec 2005 HFS3N80 Electrical Characteristics TC=25 °C HFS3N80 ID, Drain Current [A] ID, Drain Current [A] Typical Characteristics VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 1 RDS(on), [Ω] Drain-Source On-Resistance IDR, Reverse Drain Current [A] 10 0 10 150 ℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test -1 10 0.2 0.4 0.6 1.0 1.2 1.4 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 12 1500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss 900 Coss 600 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz Crss 300 VDS = 160V VGS, Gate-Source Voltage [V] 1200 Capacitance [pF] 0.8 VSD, Source-Drain voltage [V] ID, Drain Current [A] 10 VDS = 400V VDS = 640V 8 6 4 2 ※ Note : ID = 3.0A 0 -1 10 0 0 10 1 10 0 4 8 12 16 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 20 ◎ SEMIHOW REV.A0,Dec 2005 (continued) 1.2 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage HFS3N80 Typical Characteristics 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 1.5 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 3.0 Operation in This Area is Limited by R DS(on) 100 µs 2.5 ID, Drain Current [A] 1 ms 10 ms 100 100 ms DC 10-1 * Notes : 1. TC = 25 oC 10-2 100 2.0 1.5 1.0 0.5 2. TJ = 150 oC 3. Single Pulse 101 0.0 25 103 102 50 75 100 125 150 TC, Case Temperature [ ℃] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature D=0.5 Zθ JC(t), Thermal Response ID, Drain Current [A] 101 0 10 0.2 ※ Notes : 1. Zθ JC(t) = 3.2 ℃/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zθ JC(t) 0.1 0.05 -1 10 0.02 PDM 0.01 t1 single pulse -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 t2 0 10 1 10 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,Dec 2005 (continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance 1.2 BVDSS, (Normalized) Drain-Source Breakdown Voltage HFS3N80 Typical Characteristics 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 1.5 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 3.0 Operation in This Area is Limited by R DS(on) 2.5 1 ID, Drain Current [A] 10 µs 100 µs 1 ms 0 10 10 ms DC -1 10 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 10 2 1 10 2.0 1.5 1.0 0.5 0.0 25 -2 10 3 10 10 50 75 100 125 150 TC, Case Temperature [ ℃] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature D=0.5 Zθ JC(t), Thermal Response ID, Drain Current [A] 10 0 10 0.2 ※ Notes : 1. Zθ JC(t) = 3.2 ℃/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zθ JC(t) 0.1 0.05 -1 10 0.02 PDM 0.01 t1 single pulse t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,Dec 2005 HFS3N80 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,Dec 2005 HFS3N80 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,Dec 2005 HFS3N80 Package Dimension TO-220F ±0.20 ±0.20 0 0.2 2.54±0.20 6.68±0.20 0.70±0.20 12.42±0.20 3.30±0.20 2.76±0.20 1.47max 9.75±0.20 15.87±0.20 φ 8± 1 . 3 0.80±0.20 0.50±0.20 2.54typ 2.54typ ◎ SEMIHOW REV.A0,Dec 2005