CEL NE68119-T1-A Npn silicon high frequency transistor Datasheet

SILICON TRANSISTOR
NE681 SERIES
NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz
• LOW NOISE FIGURE:
1.2 dB at 1 GHz
1.6 dB at 2 GHz
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DESCRIPTION
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• HIGH ASSOCIATED GAIN:
15 dB at 1 GHz
12 dB at 2 GHz
00 (CHIP)
35 (MICRO-X)
• LOW COST
NEC's NE681 series of NPN epitaxial silicon transistors are
designed for low noise, high gain, low cost amplifier applications. Both the chip and micro-x versions are suitable for
amplifier applications up to 4 GHz. The NE681 die is also
available in six different low cost plastic surface mount package styles. NE681's unique device characteristics allow you to
use a single matching point to simultaneously achieve both low
noise and high gain.
Minimum Noise Figure, NF min (dB)
VCE = 3 V, IC = 5 mA
MSG
20
MAG
3.0
10
2.0
0
GA
NF
1.0
0.5
1.0
2.0
Associated Gain, Maximum Stable Gain
and Maximum Available Gain,
GA, MSG, MAG (dB)
NOISE FIGURE, GAIN MSG
AND MAG vs. FREQUENCY
18 (SOT 343 STYLE)
19 (3 PIN ULTRA
SUPER MINI MOLD)
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
3.0
Frequency, f (GHz)
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 28, 2005
NE681 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
fT
NF
GNF
|S21E|2
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Gain Bandwidth Product at
VCE = 8 V, IC = 20 mA
VCE = 3 V, IC = 7 mA
NE68100
00 (CHIP)
UNITS MIN TYP MAX
GHz
GHz
NE68118
NE68119
NE68130
2SC5012
2SC5007
2SC4227
18
19
30
MIN TYP MAX MIN TYP MAX MIN TYP MAX
9.0
Noise Figure at VCE = 8 V, IC = 7 mA,
f = 1 GHz
f = 2 GHz
dB
dB
1.6
Associated Gain at VCE = 8 V, IC = 7 mA,
f = 1 GHz
f = 2 GHz
dB
dB
12
Insertion Power Gain at
VCE = 8 V, IC = 20 mA, f = 1 GHz
f = 2 GHz
dB
dB
9.0
7.0
7.0
1.4
1.8
1.5
1.6
14
14
10
13.5
9
13
15
9
14
8
13
7.5
50
100
1.2
2.5
2.3
9
17
11
50
100
Forward Current Gain2 at
VCE = 8 V, IC = 20 mA
VCE = 3 V, IC = 7 mA
Collector Cutoff Current at
VCB = 10 V, IE = 0 mA
µA
1.0
1.0
1.0
1.0
IEBO
Emitter Cutoff Current at
VEB = 1 V, IC = 0 mA
µA
1.0
1.0
1.0
1.0
CRE3
Feedback Capacitance at
VCB = 3 V, IE = 0 mA, f = 1 MHz
VCB = 10 V, IE = 0 mA, f = 1 MHz
pF
pF
hFE
ICBO
RTH (J-A)
PT
250
80
Thermal Resistance (Junction to Ambient) °C/W
Total Power Dissipation
250
mW
160
0.45
0.2
0.7
0.25
40
0.9
240
0.45
0.9
0.8
80
833
1000
833
600
150
100
150
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
fT
Gain Bandwidth Product at VCE = 8 V, IC = 20 mA
VCE = 3 V, IC = 7 mA
NF
GNF
|S21E|2
UNITS
NE68133
NE68135
NE68139/39R
2SC3583
2SC3604
2SC4094
33
35
39
MIN TYP MAX MIN TYP MAX MIN TYP MAX
GHz
GHz
9.0
Noise Figure at VCE = 8 V, IC = 7 mA, f = 1 GHz
f = 2 GHz
dB
dB
1.2
Associated Gain at VCE = 8 V, IC = 7 mA,
f = 1 GHz
f = 2 GHz
dB
dB
13
Insertion Power Gain at VCE = 8 V, IC = 20 mA,
f = 1 GHz
f = 2 GHz
dB
dB
11
9.0
9.0
2
1.2
1.6
2
2.3
13.5
12
12.5
7
9
11
250
50
100
15
8.5
hFE
Forward Current Gain2 at VCE= 8 V, IC = 20 mA
VCE = 3 V, IC = 7 mA
ICBO
Collector Cutoff Current at VCB = 10 V, IE = 0 mA
µA
1.0
1.0
1.0
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0 mA
µA
1.0
1.0
1.0
CRE3
Feedback Capacitance at
VCB = 10 V, IE = 0 mA, f = 1 MHz
RTH (J-A)
PT
50
pF
100
0.35
0.9
0.2
250
0.7
50
100
0.25
200
0.8
Thermal Resistance (Junction to Ambient)
°C/W
625
590
625
Total Power Dissipation
mW
200
295
200
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed (PW ≤ 350 ms, duty cycle ≤ 2 %).
3. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
NE681 SERIES
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
20
VCEO
Collector to Emitter Voltage
V
10
VEBO
Emitter to Base Voltage
V
1.5
mA
65
IC
Collector Current
TJ
Operating Junction
Temperature
°C
1502
Storage Temperature
°C
-55 to +1503
TSTG
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. TJ for NE68135 and NE68100 is 200°C.
3. Maximum storage temperature for the NE68135 is
-65 to +150°C.
NFOPT
GA
(MHz)
(dB)
(dB)
VCE = 2.5 V, IC = 0.3 mA
500
1.24
9.26
800
1000
1.67
2.18
6.95
6.02
ANG
NFOPT
GA
(MHz)
(dB)
(dB)
ΓOPT
MAG
ANG
Rn/50
VCE = 8 V, IC = 7 mA
500
1.3
26.42
0.20
91
0.20
1000
1.45
20.54
0.20
148
0.21
2000
2.1
14.41
0.22
178
0.51
4000
3.25
7.76
0.42
-115
0.85
NE68130
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
NFOPT
GA
(MHz)
(dB)
(dB)
500
ΓOPT
MAG
FREQ.
ΓOPT
MAG
ANG
Rn/50
VCE = 2.5 V, IC = 0.3 mA
NE68119
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
NE68100
TYPICAL NOISE PARAMETERS (TA = 25°C)
Rn/50
1.48
10.23
0.74
43
1.35
0.92
800
1.90
10.15
0.72
79
1000
2.15
9.00
0.69
99
0.60
1500
2.70
4.46
0.66
126
0.38
0.42
VCE = 2.5 V, IC = 1 mA
0.73
42
1.70
0.74
72
1.01
500
1.10
14.69
0.65
45
0.78
800
1.26
12.73
0.60
80
0.30
1000
1.40
11.29
0.56
99
0.24
1.80
7.40
0.53
123
0.17
0.70
90
VCE = 2.5 V, IC = 1 mA
500
0.97
13.86
0.66
43
0.46
1500
800
1.19
9.12
0.59
48
0.35
2000
2.22
6.14
0.47
166
0.12
2500
2.75
4.89
0.49
-166
0.08
0.25
1000
10.09
0.56
89
0.30
1500
1.71
7.99
VCE = 2.5 V, IC = 3 mA
1.31
0.50
131
0.16
VCE = 2.5 V, IC = 3 mA
500
1.00
17.28
0.47
44
500
0.92
17.19
0.49
39
0.28
800
1.06
14.35
0.44
83
0.21
800
1.02
14.23
0.40
68
0.17
1000
1.16
12.69
0.43
100
0.17
1000
1.11
12.78
0.38
87
0.14
1500
1.46
9.50
0.39
130
0.12
1500
1.42
10.30
0.39
134
0.08
2000
1.80
7.70
0.35
177
0.11
8.24
0.36
165
0.11
2500
2.15
6.03
0.35
-177
0.09
50
0.27
0.18
2000
1.82
VCE = 3 V, IC = 5 mA
VCE = 8 V, IC = 7mA
500
1.00
19.00
0.37
43
0.20
800
1.10
15.57
0.31
71
0.15
1000
1.19
13.91
0.30
89
0.13
1500
1.40
11.25
0.33
139
0.09
2000
1.70
9.08
0.32
166
0.11
2500
2.05
7.62
0.36
-163
0.13
20.30
0.36
39
0.22
VCE = 8 V, IC = 7 mA
500
1.10
500
1.30
20.34
0.29
1000
1.40
13.96
0.25
84
2000
1.80
8.56
0.25
155
0.16
3000
2.50
5.64
0.48
-167
0.10
4000
3.60
4.50
0.67
-135
0.20
NE68135
TYPICAL NOISE PARAMETERS (TA = 25°C)
800
1.20
16.82
0.28
64
0.16
1000
1.30
15.10
0.28
81
0.14
FREQ.
NFOPT
GA
130
0.11
(MHz)
(dB)
(dB)
MAG
1500
1.50
12.35
0.28
2000
1.77
10.21
0.28
158
0.12
2500
2.10
8.85
0.33
-166
0.14
3000
2.40
7.86
0.44
-141
0.16
VCE = 8 V, IC = 7 mA
1000
1.1
ΓOPT
ANG
Rn/50
0.22
17.33
0.28
71
2000
1.6
13.60
0.37
160
0.15
4000
3.4
9.25
0.51
-139
0.27
NE681 SERIES
NE68133
TYPICAL NOISE PARAMETERS (TA = 25°C)
NE68139
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
NFOPT
GA
(MHz)
(dB)
(dB)
MAG
ANG
Rn/50
VCE = 2.5 V, IC = 0.3 mA
500
1.21
12.45
0.75
47
1.15
ΓOPT
FREQ.
NFOPT
GA
(MHz)
(dB)
(dB)
MAG
ANG
Rn/50
1.28
ΓOPT
VCE = 2.5 V, IC = 0.3 mA
500
1.20
14.10
0.78
47
800
1.69
7.72
0.74
72
0.97
800
1.45
8.42
0.75
72
0.84
1000
1.95
5.96
0.68
88
0.71
1000
1.67
8.37
0.68
95
0.56
1500
2.52
3.12
0.63
122
0.34
15.71
0.63
44
0.43
VCE = 2.5 V, IC = 1.0 mA
VCE = 2.5 V, IC = 1 mA
500
0.90
500
.92
14.52
0.68
47
0.42
800
1.10
12.30
0.56
72
0.26
800
1.20
10.57
0.63
70
0.34
1000
1.26
11.66
0.53
98
0.20
1000
1.35
9.29
0.57
87
0.30
1500
1.70
8.85
0.49
145
0.12
1500
1.71
6.53
0.50
120
0.17
0.57
178
0.07
2000
2.00
5.53
0.44
168
0.11
2000
2.20
7.12
VCE = 2.5 V, IC = 3 mA
0.45
44
0.25
VCE = 2.5 V, IC = 3 mA
500
0.88
18.20
500
0.86
16.37
0.54
47
0.24
800
1.00
14.62
0.39
73
0.19
800
1.00
12.41
0.51
67
0.20
1000
1.08
13.29
0.37
99
0.16
1000
1.08
11.07
0.46
86
0.18
1500
1.30
10.54
0.35
151
0.09
1500
1.25
8.61
0.36
128
0.12
2000
1.80
8.60
0.43
-177
0.07
2000
1.40
6.99
0.35
172
0.10
VCE = 8 V, IC = 7 mA
500
1.15
20.50
0.26
42
0.17
1000
1.25
15.62
0.16
133
0.14
1500
1.4
12.49
0.20
176
0.09
2000
1.6
10.48
0.31
-165
0.14
3000
2.15
8.00
0.53
-123
0.48
4000
3.0
6.81
0.71
-101
0.90
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE68100 & NE68135
INSERTION GAIN vs.
COLLECTOR CURRENT
FORWARD INSERTION GAIN
AND MAXIMUM AVAILABLE GAIN
vs. FREQUENCY
12
VCE = 8 V
IC = 20 mA
25
|S21E|2 NE68100
MAG NE68135
20
15
10
NE68133
|S21E| 2
MAG
5
0
f = 2 GHz
VCE = 8 V
Insertion Gain, |S21E|2 (dB)
Insertion Gain, |S21E|2 (dB)
Maximum Available Gain, MAG (dB)
30
10
f = 3 GHz
8
f = 4 GHz
6
4
2
0
0.1
0.2 0.3
0.5 0.7 1
2
Frequency, f (GHz)
3
5 7 10
1
2
3
5
7
10
20
Collector Current, IC (mA)
30
50
NE681 SERIES
TYPICAL PERFORMANCE CURVES
(TA = 25°C)
DC POWER DERATING CURVES
COLLECTOR TO BASE CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Collector to Base Capacitance, COB (pF)
Total Power Dissipation, PT (mW)
400
300
200
NE68135
NE68133
100
0
0
50
100
150
3.0
2.0
1.0
0.7
0.5
0.3
NE68133
0.2
NE68135
0.1
200
1
2
3
5
7
10
30
Collector to Base Voltage, VCB (V)
FORWARD CURRENT GAIN
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
50
50
Gain Bandwidth Product, fT (GHz)
VCE = 8 V
300
200
100
70
50
30
20
10
VCE = 8 V
30
20
10
7
5
3
2
1
1
2
3
5
7
10
20
30
50
1
2
3
5
7 10
20
30
Collector Current, IC (mA)
Collector Current, IC (mA)
NE68133
NOISE FIGURE
vs. COLLECTOR CURRENT
NE68100 & NE68135
NOISE FIGURE
vs. COLLECTOR CURRENT
50
3.0
3.0
VCE = 8 V
f = 2 GHz
VCE = 8 V
f = 1 GHz
2.5
2.5
Noise Figure, NF (dB)
Noise Figure, NF (dB)
20
Ambient Temperature, TA (°C)
500
DC Forward Current Gain, hFE
5.0
2.0
1.5
1.0
0.5
2.0
1.5
1.0
0.5
0
0
1
2
3
5
7
10
20
Collector Current, IC (mA)
30
50
1
2
3
5
7
10
20
Collector Current, IC (mA)
30
50
NE681 SERIES
TYPICAL COMMON EMITTER SCATTERING PARAMETERS
j50
90˚
120˚
j100
j25
S11
17 GHz
60˚
150˚
30˚
j10
0
S12
17 GHz
10
25
50
S22
17 GHz
180˚
0
100
S11
0.1 GHz
S21
0.1 GHz
S12
0.1 0.2 0.3 0.4 0.5 0˚
0.1 GHz
S21
17 GHz
10
S22
0.1 GHz
-j10
15
-150˚
NE68100
VCE = 8 V, IC = 7 mA
FREQUENCY
(MHz)
100
200
500
1000
1500
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
Coordinates in Ohms
Frequency in GHz
(VCE = 8 V, IC = 7 mA)
-j100
-j25
-j50
S11
S21
MAG
ANG
0.827
0.809
0.742
0.701
0.689
0.686
0.687
0.693
0.699
0.708
0.717
0.721
0.725
0.726
0.724
0.722
-20.8
-49.5
-101.1
-139.2
-156.6
-167.2
179.8
172.2
166.6
162.1
157.0
151.7
145.5
137.6
131.2
123.6
-47.0
-85.3
-135.8
-161.1
-171.7
-178.4
172.7
167.3
162.6
159.0
154.5
149.4
143.5
135.9
129.4
122.1
MAG
-30˚
20
-120˚
S21 25
-60˚
-90˚
S12
S22
K
ANG
MAG1
ANG
MAG
ANG
MAG
(dB)
19.513
17.981
12.631
7.498
5.182
3.959
2.687
2.048
1.662
1.431
1.250
1.105
0.989
0.868
0.773
0.673
163.9
151.0
123.0
101.5
90.4
82.0
69.7
59.1
49.8
41.1
31.7
23.3
14.2
5.9
-2.0
-9.7
0.012
0.022
0.038
0.047
0.049
0.053
0.061
0.071
0.081
0.096
0.116
0.125
0.146
0.169
0.179
0.192
88.3
65.5
42.2
36.7
33.0
35.0
45.9
48.7
53.2
57.0
56.6
56.9
55.9
54.9
51.9
49.0
0.964
-7.0
0.894 -16.8
0.691 -27.4
0.536 -29.0
0.483 -28.6
0.461 -29.2
0.447 -33.6
0.449 -40.6
0.454 -48.0
0.473 -57.1
0.490 -66.8
0.519 -76.0
0.549 -86.4
0.582 -96.0
0.621 -104.8
0.663 -114.1
0.03
0.13
0.28
0.47
0.71
0.88
1.11
1.21
1.27
1.15
0.99
0.97
0.83
0.74
0.71
0.69
32.1
29.1
25.2
22.0
20.2
18.7
14.4
11.8
10.0
9.4
10.3
9.5
8.3
7.1
6.4
5.4
38.130
31.089
16.975
9.066
6.113
4.627
3.112
2.361
1.913
1.643
1.433
1.266
1.134
1.001
0.897
0.787
154.1
135.9
108.9
93.2
84.9
78.3
67.9
58.6
50.1
42.2
33.3
25.4
16.7
8.4
0.5
-7.1
0.011
0.017
0.025
0.028
0.036
0.042
0.054
0.071
0.086
0.103
0.123
0.133
0.153
0.171
0.185
0.197
90.0
70.3
45.4
49.5
49.6
53.2
59.2
62.6
63.5
65.1
63.2
60.6
60.4
57.3
53.9
51.8
0.885 -15.0
0.753 -26.0
0.504 -30.8
0.404 -27.0
0.377 -26.3
0.369 -26.6
0.361 -31.6
0.362 -38.5
0.372 -45.8
0.386 -55.5
0.405 -65.0
0.433 -74.2
0.464 -84.5
0.500 -94.4
0.546 -103.2
0.587 -112.6
0.01
0.12
0.45
0.82
0.97
1.10
1.25
1.21
1.19
1.08
0.94
0.91
0.84
0.76
0.71
0.72
35.4
32.6
28.3
25.1
22.3
18.5
14.6
12.5
10.8
10.3
10.7
9.8
8.7
7.7
6.9
6.0
VCE = 8 V, IC = 20 mA
100
200
500
1000
1500
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
0.665
0.664
0.663
0.663
0.667
0.669
0.676
0.686
0.693
0.705
0.719
0.727
0.726
0.733
0.732
0.728
S-Parameters include bond wires.
BASE: Total 1 wire (s), 1 per bond pad, 0.0122" (309 µm) long each wire.
COLLECTOR: Total 1 wire (s), 1 per bond pad, 0.008" (203 µm) long each wire.
EMITTER: Total 2 wire (s), 1 per side, 0.0194" (494 µm) long each wire.
WIRE: 0.0007" (17.7 µm) dia., gold.
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE681 SERIES
TYPICAL COMMON EMITTER SCATTERING PARAMETERS
j50
90˚
10
25
50
S22
5 GHz
100
60˚
150˚
S11
5 GHz
j10
0
120˚
j100
j25
30˚
S21
0.5 GHz
S11
0.05 GHz 0
S22
0.05 GHz
S12
0.5 GHz
180˚
0.2 0.3
4
S21
5 GHz
0.5 0˚
S12
5 GHz
-j10
6
-150˚
-30˚
8
-j100
-j25
Coordinates in Ohms
Frequency in GHz
(VCE = 2.5 V, IC = 3 mA)
-j50
NE68119
VCE = 2.5 V, IC = 0.3 mA
FREQUENCY
(MHz)
50
100
200
300
400
500
600
700
800
900
1000
1500
2000
3000
S11
MAG
0.995
0.992
0.981
0.967
0.950
0.929
0.915
0.892
0.874
0.853
0.838
0.770
0.723
0.693
S21
ANG
MAG
-120˚
S21 10
S12
S22
ANG
MAG
ANG
-60˚
-90˚
MAG
K
ANG
MAG1
(dB)
-6.1
-11.9
-23.5
-35.3
-46.1
-57.0
-67.0
-77.0
-86.0
-94.5
-102.9
-139.2
-170.6
132.2
1.283
1.081
1.038
1.021
0.985
0.952
0.936
0.888
0.869
0.808
0.784
0.652
0.564
0.441
174.1
170.4
158.4
149.2
139.2
130.0
121.0
112.7
105.0
97.2
90.6
61.2
39.0
9.0
0.017
0.027
0.052
0.078
0.096
0.114
0.130
0.144
0.153
0.160
0.165
0.169
0.146
0.085
88.1
80.9
74.0
65.0
58.4
52.4
44.5
38.5
32.7
27.3
21.8
1.6
-12.7
6.0
0.997
0.995
0.991
0.989
0.979
0.962
0.948
0.937
0.928
0.916
0.908
0.869
0.842
0.803
-1.1
-4.5
-9.3
-14.3
-18.2
-22.5
-26.4
-30.1
-33.9
-37.1
-40.5
-54.5
-66.5
-91.2
0.02
0.06
0.11
0.15
0.20
0.23
0.30
0.33
0.36
0.42
0.45
0.66
0.95
1.98
18.8
16.0
13.0
11.2
10.1
9.2
8.6
7.9
7.5
7.0
6.8
5.9
5.9
1.5
-8.4
-15.9
-30.0
-44.6
-57.8
-70.1
-81.8
-92.3
-102.0
-110.7
-118.7
-153.7
177.3
125.5
4.317
3.510
3.384
3.234
3.069
2.855
2.671
2.502
2.341
2.195
2.041
1.547
1.255
0.940
172.8
166.3
155.6
145.3
134.8
125.6
116.9
109.0
102.0
95.1
89.4
63.8
43.4
10.4
0.016
0.026
0.049
0.069
0.090
0.104
0.115
0.122
0.127
0.133
0.135
0.132
0.124
0.132
87.7
77.4
71.9
60.3
54.9
45.7
40.8
34.6
29.9
25.9
21.6
9.1
6.7
20.2
0.990
0.986
0.971
0.949
0.918
0.883
0.850
0.822
0.798
0.778
0.762
0.706
0.672
0.627
-1.3
-7.5
-13.0
-19.4
-24.6
-29.1
-33.4
-37.2
-40.6
-43.4
-46.4
-58.1
-68.2
-89.7
0.04
0.10
0.09
0.15
0.17
0.25
0.28
0.33
0.38
0.43
0.48
0.75
1.07
1.41
24.3
21.3
18.4
16.7
15.3
14.4
13.7
13.1
12.7
12.2
11.8
10.7
8.4
4.7
-13.0
-22.9
-44.6
-63.4
-79.9
-93.8
-106.0
-116.4
-125.9
-134.1
-141.6
-172.6
162.4
117.0
10.816
9.618
8.856
7.858
6.982
6.172
5.458
4.898
4.429
4.032
3.696
2.618
2.042
1.474
167.8
161.4
145.9
133.0
121.6
112.2
104.1
97.3
91.1
85.5
80.6
59.5
41.8
11.1
0.014
0.023
0.044
0.061
0.071
0.080
0.086
0.089
0.093
0.095
0.099
0.113
0.130
0.187
85.2
76.5
65.5
55.3
48.3
42.4
38.7
36.7
34.0
33.3
32.1
29.1
28.7
24.2
0.970
0.955
0.907
0.830
0.761
0.699
0.651
0.613
0.587
0.565
0.549
0.508
0.485
0.448
-5.3
-12.0
-21.5
-29.5
-35.9
-39.7
-43.3
-46.0
-48.2
-50.1
-52.3
-59.9
-67.6
-85.5
0.08
0.10
0.16
0.25
0.32
0.41
0.48
0.55
0.62
0.69
0.74
0.99
1.15
1.16
28.9
26.2
23.0
21.1
19.9
18.9
18.0
17.4
16.8
16.3
15.7
13.6
9.6
6.5
VCE = 2.5 V, IC = 1.0 mA
50
100
200
300
400
500
600
700
800
900
1000
1500
2000
3000
0.979
0.965
0.944
0.915
0.877
0.836
0.802
0.770
0.741
0.714
0.694
0.616
0.572
0.555
VCE = 2.5 V, IC = 3 mA
50
100
200
300
400
500
600
700
800
900
1000
1500
2000
3000
0.937
0.904
0.839
0.771
0.699
0.642
0.598
0.564
0.534
0.511
0.494
0.438
0.409
0.410
See note on next page.
NE681 SERIES
TYPICAL COMMON EMITTER SCATTERING PARAMETERS
90˚
j50
j25
120˚
j100
j150
j10
0
60˚
S12
2 GHz
150˚
30˚
j250
10
25
S11
2 GHz
50
S21
0.1 GHz
100 150 250 500 10
S21
2 GHz
180˚
0
S12 .05 .10 .15
0.1 GHz
S22
0.1 GHz
-j10
S22
2 GHz
S11
0.1 GHz
20 25 0˚
10
-j250
15
-150˚
-j150
-30˚
20
-j50
NE68133
VCE = 8 V, IC = 7 mA
FREQUENCY
(MHz)
100
200
500
1000
1500
2000
3000
S11
MAG
0.802
0.639
0.344
0.170
0.115
0.098
0.137
Coordinates in Ohms
Frequency in GHz
(VCE = 8 V, IC = 10 mA)
-j100
-j25
S21
S12
S21 25
-120˚
-60˚
-90˚
S22
K
MAG1
ANG
-27.1
-49.2
-83.3
-113.4
-144.1
-176.3
137.6
MAG
17.578
14.213
7.671
4.126
2.870
2.254
1.669
ANG
153.8
134.2
105.5
86.7
75.3
66.2
53.2
MAG
0.023
0.039
0.065
0.109
0.160
0.212
0.313
ANG
68.7
69.8
67.8
73.5
74.8
74.7
73.2
MAG
0.918
0.783
0.579
0.491
0.454
0.438
0.409
ANG
-12.7
-19.9
-21.5
-17.7
-17.8
-16.9
-21.0
0.37
0.46
0.81
1.01
1.05
1.04
0.99
(dB)
28.8
25.6
20.7
15.2
11.2
9.0
7.3
-31.7
-54.5
-87.1
-115.8
-146.2
180.0
134.2
21.212
16.031
8.093
4.284
2.981
2.350
1.736
148.4
127.9
102.0
85.3
75.2
66.5
53.9
0.017
0.037
0.061
0.109
0.165
0.217
0.320
57.9
69.0
72.6
76.3
75.9
75.2
73.7
0.896
0.737
0.540
0.461
0.430
0.413
0.380
-14.6
-21.7
-20.9
-17.0
-16.5
-16.8
-21.3
0.50
0.54
0.88
1.04
1.04
1.03
0.99
31.0
26.4
21.2
14.7
11.3
9.3
7.3
-43.3
-66.3
-95.5
-127.5
-160.8
167.0
132.5
29.285
19.280
8.683
4.512
3.078
2.406
1.774
138.1
117.5
96.1
82.3
73.3
64.9
53.1
0.013
0.035
0.057
0.110
0.167
0.221
0.322
61.2
73.1
74.0
79.6
78.9
74.9
72.4
0.792
0.614
0.481
0.440
0.416
0.404
0.379
-19.4
-22.6
-16.5
-13.2
-13.9
-13.8
-19.4
0.57
0.69
0.98
1.03
1.04
1.02
0.98
33.5
27.4
21.8
15.1
11.4
9.5
7.4
-46.9
-70.7
-100.5
-136.1
-175.0
156.0
128.4
30.197
19.196
8.499
4.363
3.009
2.348
1.742
135.2
115.1
94.8
81.7
72.7
65.0
53.0
0.017
0.029
0.059
0.111
0.167
0.219
0.325
65.9
73.4
77.7
80.7
80.1
77.1
74.2
0.836
0.664
0.503
0.455
0.428
0.415
0.387
-17.4
-22.2
-17.7
-14.3
-14.2
-14.2
-19.7
0.50
0.67
0.95
1.03
1.03
1.03
0.98
32.5
28.2
21.6
14.9
11.5
9.2
7.3
VCE = 8 V, IC = 10 mA
100
200
500
1000
1500
2000
3000
0.744
0.553
0.277
0.134
0.092
0.079
0.122
VCE = 8 V, IC = 20 mA
100
200
500
1000
1500
2000
3000
0.594
0.389
0.175
0.089
0.064
0.070
0.120
VCE = 8 V, IC = 30 mA
100
200
500
1000
1500
2000
3000
0.557
0.354
0.158
0.080
0.065
0.076
0.127
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE681 SERIES
TYPICAL COMMON EMITTER SCATTERING PARAMETERS
5 GHz
5 GHz
S21
0.1 GHz
S22
S11 0.1 GHz
0.1 GHz
S12
0.1 GHz
5 GHz
5 GHz
Coordinates in Ohms
Frequency in GHz
(VCE = 8 V, IC = 10 mA)
NE68135
VCE = 8 V, IC = 7 mA
FREQUENCY
(MHz)
100
5 00
1000
1500
2000
3000
4000
5000
S11
S21
S12
S22
K
MAG1
(dB)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
.836
.659
.585
.557
.562
.561
.562
.563
-26.1
-105.0
-146.1
-167.0
-180.0
159.6
142.8
127.0
18.427
11.481
6.625
4.555
3.507
2.413
1.854
1.516
160.4
114.7
90.3
75.5
63.9
43.4
25.1
8.0
.014
.041
.051
.058
.068
.088
.113
.142
73.6
44.3
38.3
39.3
41.3
43.1
41.9
38.7
.959
.654
.512
.472
.462
.468
.490
.522
-11.3
-33.2
-38.5
-43.1
-49.4
-64.3
-80.4
-96.0
0.16
0.38
0.68
0.93
1.02
1.11
1.07
0.98
31.1
24.4
21.1
18.9
16.4
12.4
10.6
10.3
-32.1
-117.6
-154.7
-173.1
175.3
156.5
140.6
125.2
24.097
13.015
7.233
4.925
3.778
2.590
1.990
1.629
157.2
109.6
87.5
73.9
62.9
43.3
25.5
8.7
.013
.036
.045
.055
.067
.091
.119
.149
73.4
44.6
43.2
45.8
47.6
47.4
44.2
39.4
.937
.582
.457
.425
.420
.428
.452
.486
-13.9
-35.2
-38.5
-42.6
-48.8
-63.7
-79.7
-95.2
0.15
0.47
0.79
1.00
1.05
1.09
1.05
0.96
32.6
25.6
22.0
19.4
16.1
12.7
10.9
10.4
-49.9
-139.7
-168.1
-177.7
168.5
151.9
137.2
122.7
36.807
14.980
7.916
5.328
4.072
2.780
2.131
1.745
149.3
101.5
83.2
71.3
61.1
42.7
25.5
9.0
.012
.027
.038
.051
.065
.094
.124
.156
67.4
49.0
53.7
56.2
56.6
53.4
47.8
41.3
.877
.475
.392
.375
.376
.389
.415
.451
-19.2
-34.9
-35.7
-39.9
-46.5
-61.9
-78.1
-93.7
0.21
0.66
0.95
1.08
1.09
1.07
1.01
0.94
35.0
27.5
23.2
18.4
16.2
13.1
11.6
10.5
-64.1
-150.2
-173.7
173.7
165.5
149.8
135.7
121.2
43.452
15.238
7.926
5.318
4.058
2.767
2.118
1.731
144.0
97.9
81.2
69.9
60.1
41.9
24.9
8.5
.010
.023
.036
.049
.064
.094
.125
.157
64.1
52.7
58.9
60.7
60.2
55.9
49.8
42.9
.831
.441
.381
.370
.374
.390
.416
.453
-21.9
-32.3
-32.9
-37.8
-44.9
-60.9
-77.4
-93.3
0.26
0.77
1.01
1.11
1.09
1.06
1.00
0.92
36.3
28.2
22.7
18.3
16.1
13.2
12.1
10.4
VCE = 8 V, IC = 10 mA
100
500
1000
1500
2000
3000
4000
5000
.781
.609
.558
.540
.547
.549
.551
.551
VCE = 8 V, IC = 20 mA
100
500
1000
1500
2000
3000
4000
5000
.654
.547
.535
.527
.534
.541
.544
.544
VCE = 8 V, IC = 30 mA
100
500
1000
1500
2000
3000
4000
5000
.575
.539
.537
.532
.541
.549
.552
.553
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE681 SERIES
TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C)
90˚
1
.6
2
S12
3 GHz
135˚
S22
3 GHz
45˚
4
.2
10
0
.2
.6
1
2
4
10
S22
0.5 GHz
-10
S11
0.5 GHz
S11
3 GHz
S12
0.5 GHz
S21
180˚ 0.5 GHz
S21
3 GHz
0.05 0.10 0.15
0˚
2.5
5
-.2
-4
-2
-.6
-1
NE68139
VCE = 2.5 V, IC = 0.3 mA
FREQUENCY
(MHz)
50
100
200
300
400
500
600
800
1000
1500
2000
3000
S11
S21
MAG
0.996
0.995
0.990
0.973
0.953
0.931
0.909
0.862
0.819
0.744
0.732
0.762
ANG
7.5
Coordinates in Ohms
Frequency in GHz
(VCE = 2.5 V, IC = 3 mA)
315˚
225˚
10
270˚
S12
S22
K
ANG
MAG1
(dB)
MAG
ANG
MAG
ANG
MAG
-3.4
-11.4
-20.3
-30.7
-41.2
-50.3
-60.5
-79.9
-98.5
-140.0
-173.0
142.1
1.089
1.079
1.071
1.032
0.993
0.991
1.008
0.908
0.871
0.729
0.632
0.438
175.2
173.1
161.9
153.6
145.9
137.2
129.9
114.3
101.2
72.2
51.7
28.5
0.014
0.027
0.050
0.075
0.098
0.122
0.138
0.167
0.184
0.192
0.155
0.089
83.2
80.3
74.5
68.7
64.3
59.3
53.5
42.7
33.4
14.1
3.4
8.4
0.995
0.993
0.989
0.985
0.976
0.965
0.949
0.918
0.888
0.828
0.802
0.770
-1.1
-2.7
-5.7
-8.7
-11.4
-13.8
-16.4
-21.0
-25.0
-35.2
-46.3
-76.7
0.13
0.06
0.16
0.19
0.19
0.25
0.28
0.37
0.45
0.66
0.85
1.62
18.9
16.0
13.3
11.4
10.1
9.1
8.6
7.4
6.8
5.8
5.0
2.3
-6.8
-14.8
-27.5
-40.4
-53.8
-65.2
-76.9
-98.4
-117.6
-157.8
173.8
136.9
3.763
3.648
3.497
3.346
3.184
3.043
2.880
2.516
2.237
1.686
1.346
0.941
175.3
171.0
159.1
149.4
140.6
131.8
124.1
109.8
98.4
74.8
56.9
30.9
0.016
0.029
0.050
0.070
0.092
0.106
0.119
0.137
0.145
0.145
0.130
0.144
86.4
82.4
74.3
65.4
58.7
53.8
47.7
38.9
32.3
23.5
24.6
47.4
0.989
0.980
0.963
0.946
0.916
0.884
0.845
0.778
0.726
0.631
0.583
0.538
-2.8
-4.8
-9.5
-13.9
-17.8
-20.9
-24.1
-28.6
-31.9
-39.8
-48.9
-75.9
0.01
0.01
0.10
0.17
0.20
0.25
0.30
0.40
0.49
0.75
1.04
1.21
23.7
21.0
18.4
16.8
15.4
14.6
13.8
12.6
11.9
10.7
8.9
5.4
-10.7
-23.5
-42.0
-60.3
-76.4
-90.0
-103.0
-125.0
-143.4
-178.4
159.4
130.6
10.426
9.954
9.011
8.067
7.165
6.329
5.660
4.558
3.815
2.684
2.078
1.442
172.1
164.8
148.6
136.2
125.8
117.1
109.8
97.8
88.7
70.7
56.4
34.1
0.015
0.027
0.046
0.061
0.074
0.083
0.089
0.099
0.106
0.123
0.141
0.197
84.7
79.0
67.6
57.7
52.4
49.8
46.7
43.3
42.0
43.6
47.3
49.7
0.975
0.972
0.910
0.826
0.754
0.690
0.634
0.552
0.496
0.412
0.362
0.302
-4.6
-9.6
-18.1
-24.5
-29.3
-32.3
-34.4
-37.1
-38.6
-43.3
-51.3
-78.6
0.07
0.05
0.19
0.29
0.35
0.43
0.50
0.65
0.77
0.99
1.11
1.08
28.4
25.7
22.9
21.2
19.9
18.8
18.0
16.6
15.6
13.4
9.7
6.9
VCE = 2.5 V, IC = 1.0 mA
50
100
200
300
400
500
600
800
1000
1500
2000
3000
0.985
0.971
0.942
0.914
0.876
0.828
0.790
0.715
0.663
0.596
0.600
0.660
VCE = 2.5 V, IC = 3 mA
50
100
200
300
400
500
600
800
1000
1500
2000
3000
0.916
0.895
0.829
0.755
0.694
0.619
0.574
0.500
0.470
0.453
0.481
0.567
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE681 SERIES
TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C)
NE68139
VCE = 8 V, IC = 7 mA
FREQUENCY
(MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
2000
3000
4000
5000
S11
MAG
0.764
0.675
0.569
0.481
0.432
0.398
0.374
0.354
0.339
0.332
0.333
0.343
0.332
0.343
0.348
0.414
0.502
0.595
0.650
S21
ANG
-28
-55
-76
-94
-110
-120
-133
-141
-152
-159
-166
-174
180
173
171
150
126
110
97
MAG
17.806
15.233
12.659
10.620
8.886
7.696
6.888
6.073
5.422
4.963
4.576
4.264
3.912
3.656
3.433
2.656
1.829
1.426
1.119
S12
ANG
156
138
126
116
107
102
97
93
88
85
81
78
76
73
71
56
38
17
1
MAG
0.002
0.008
0.018
0.025
0.035
0.043
0.046
0.056
0.055
0.066
0.069
0.076
0.080
0.089
0.098
0.129
0.192
0.256
0.317
S22
ANG
53
70
61
59
59
58
59
59
60
61
62
62
63
63
66
60
60
50
44
MAG
ANG
0.944 -12
0.855 -19
0.734 -22
0.698 -25
0.602 -24
0.589 -24
0.530 -26
0.522 -25
0.493 -28
0.493 -25
0.488 -28
0.457 -27
0.467 -29
0.449 -29
0.447 -29
0.388 -40
0.323 -63
0.302 -95
0.343 -126
K
0.91
0.54
0.69
0.74
0.86
0.86
0.99
0.97
1.13
1.05
1.08
1.09
1.12
1.09
1.06
1.04
1.00
0.88
0.83
MAG1
(dB)
39.5
32.8
28.5
26.3
24.0
22.5
21.8
20.4
17.7
17.4
16.5
15.7
14.8
14.3
13.9
11.9
9.8
7.5
5.5
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE681 SERIES
NE68118 NONLINEAR MODEL
SCHEMATIC
Q1
CCBPKG
CCB
LC
LBX
LCX
Collector
LB
Base
CCE
CBEPKG
LE
LC
CCEPKG
LEX
Emitter
BJT NONLINEAR MODEL PARAMETERS(1)
Parameters
Q1
UNITS
Parameters
Q1
IS
2.7e-16
MJC
0.56
BF
185
XCJC
0
NF
1.02
CJS
0
0.75
VAF
15
VJS
IKF
0.055
MJS
0
ISE
1.77e-11
FC
0.5
14e-12
NE
2.1
TF
BR
1
XTF
3
NR
1
VTF
25
VAR
Infinity
ITF
0.1
IKR
Infinity
PTF
0
ISC
0
TR
0.3e-9
NC
2
EG
1.11
RE
0.6
XTB
0
RB
12
XTI
3
RBM
3.7
KF
0
IRB
1.2e-5
AF
1
RC
8
CJE
1.2e-12
VJE
0.77
MJE
0.5
CJC
0.8e-12
VJC
0.27
(1) Gummel-Poon Model
Parameter
time
capacitance
inductance
resistance
voltage
current
Units
seconds
farads
henries
ohms
volts
amps
ADDITIONAL PARAMETERS
Parameters
CCB
CCE
LB
LC
LE
CCBPKG
CCEPKG
CBEPKG
LBX
LCX
LEX
68118
0.07e-12
0.01e-12
1.16e-9
1.54e-9
0.83e-9
0.09e-12
0.51e-12
0.25e-12
0.18e-9
0.8e-9
0.09e-9
MODEL RANGE
Frequency: 0.05 to 5.0 GHz
Bias:
VCE = 2.5 V to 8.0 V, IC = 3 mA to 10 mA
Date:
5/29/96
Note:
1. This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
NE681 SERIES
NE68119 NONLINEAR MODEL
SCHEMATIC
Q1
CCBPKG
CCB
LCX
LBX
Collector
LB
Base
CCE
CCEPKG
LE
LEX
Emitter
UNITS
BJT NONLINEAR MODEL PARAMETERS(1)
Parameters
Q1
Parameters
Q1
IS
BF
2.7e-16
MJC
0.56
185.0
XCJC
0
NF
1.02
CJS
0
VAF
15.0
VJS
0.75
IKF
0.055
MJS
0
ISE
1.77e-11
FC
0.5
NE
2.1
TF
14.0e-12
BR
1
XTF
3
NR
1
VTF
25
VAR
Infinity
ITF
0.1
IKR
Infinity
PTF
0
ISC
0
TR
0.3e-9
NC
2
EG
1.11
RE
0.6
XTB
0
RB
12
XTI
3
RBM
3.7
KF
0
IRB
1.2e-5
AF
1
RC
8
CJE
1.2e-12
VJE
0.77
MJE
0.5
CJC
0.8e-12
VJC
0.27
(1) Gummel-Poon Model
Parameter
time
capacitance
inductance
resistance
voltage
current
Units
seconds
farads
henries
ohms
volts
amps
ADDITIONAL PARAMETERS
Parameters
CCB
CCE
LB
LE
CCBPKG
CCEPKG
LBX
LCX
LEX
68119
0.07e-12
0.01e-12
1.13e-9
0.85e-9
0.18e-12
0.21e-12
0.19e-9
0.19e-9
0.19e-9
MODEL RANGE
Frequency: 0.05 to 3.0 GHz
Bias:
VCE = 2.5 V to 8.0 V, IC = 0.3 mA to 10 mA
NE681 SERIES
NE68130 NONLINEAR MODEL
SCHEMATIC
Q1
CCBPKG
CCB
LCX
LBX
Collector
LB
Base
CCE
CBEPKG
LE
CCEPKG
LEX
Emitter
BJT NONLINEAR MODEL PARAMETERS (1)
Parameters
Q1
Parameters
UNITS
Q1
Parameter
time
seconds
Units
farads
IS
2.7e-16
MJC
0.56
BF
185
XCJC
0
capacitance
NF
1.02
CJS
0
inductance
henries
resistance
ohms
VAF
15
VJS
0.75
IKF
0.055
MJS
0
voltage
volts
ISE
1.77e-11
FC
0.5
current
amps
NE
2.1
TF
14e-12
BR
1
XTF
3
NR
1
VTF
25
VAR
Infinity
ITF
0.1
CCB
0.07e-12
IKR
Infinity
PTF
0
CCE
0.01e-12
ISC
0
TR
0.3e-9
LB
0.52e-9
NC
2
EG
1.11
LE
1.18e-9
RE
0.6
XTB
0
CCBPKG
0.12e-12
ADDITIONAL PARAMETERS
Parameters
68130
RB
12
XTI
3
CCEPKG
0.16e-12
RBM
3.7
KF
0
CBEPKG
0.04e-12
IRB
1.2e-5
AF
1
LBX
0.2e-9
RC
8
LCX
0.8e-9
CJE
1.2e-12
LEX
0.2e-9
VJE
0.77
MJE
0.5
CJC
0.8e-12
VJC
0.27
MODEL RANGE
Frequency: 0.05 to 3.0 GHz
Bias:
VCE = 2.5 V to 8 V, IC = 0.3 mA to 10 mA
Date:
10/11/96
(1) Gummel-Poon Model
Note:
This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
NE681 SERIES
NE68133 NONLINEAR MODEL
SCHEMATIC
Q1
CCBPKG
CCB
LCX
LBX
Collector
LB
Base
CCE
LE
CBEPKG
CCEPKG
LEX
Emitter
BJT NONLINEAR MODEL PARAMETERS
Parameters
Q1
Parameters
(1)
UNITS
Q1
Parameter
Units
IS
2.7e-16
MJC
0.56
time
seconds
BF
185
XCJC
0
capacitance
farads
NF
1.02
CJS
0
inductance
henries
0.75
resistance
ohms
VAF
15
VJS
IKF
0.055
MJS
0
voltage
volts
ISE
1.77e-11
FC
0.5
current
amps
NE
2.1
TF
14e-12
BR
1
XTF
3
NR
1
VTF
25
VAR
Infinity
ITF
0.1
IKR
Infinity
PTF
0
ISC
0
TR
0.3e-9
NC
2
EG
1.11
RE
0.6
XTB
0
RB
12
XTI
3
RBM
3.7
KF
0
IRB
1.2e-5
AF
1
RC
8
CJE
1.2e-12
VJE
0.77
MJE
0.5
CJC
0.8e-12
VJC
0.27
ADDITIONAL PARAMETERS
Parameters
68133
CCB
0.07e-12
CCE
0.01e-12
LB
0.9e-9
LE
1.2e-9
CCBPKG
0.2e-12
CCEPKG
0.2e-12
CBEPKG
0.01e-12
LBX
0.3e-9
LCX
0.6e-9
LEX
0.3e-9
MODEL RANGE
Frequency: 0.1 to 8.0 GHz
Bias:
VCE = 1 V to 8 V, IC = 1 mA to 30 mA
Date:
7/97
(1) Gummel-Poon Model
Note:
This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
NE681 SERIES
NE68135 NONLINEAR MODEL
SCHEMATIC
Q1
CCB_PKG
0.11pF
0.07pF
LC
0.96 nH
CCB
RB_PKG
LB_PKG
LB
0.15nH
0.45nH
COLLECTOR
0.1 ohms
CCE
0.01pF
BASE
0.1 ohms
RC_PKG
LC_PKG
0.15nH
CCE_PKG
0.2pF
CBE_PKG
0.05pF
LE_PKG
0.38nH
RE_PKG
0.1 ohms
CBEX_PKG
CCEX_PKG
0.2pF
0.1pF
EMITTER
BJT NONLINEAR MODEL PARAMETERS
(1)
UNITS
Parameters
Q1
Parameters
Q1
Parameter
IS
2.7e-16
MJC
0.56
time
seconds
Units
BF
185.0
XCJC
0
capacitance
farads
NF
1.02
CJS
0
inductance
henries
VAF
15.0
VJS
0.75
resistance
ohms
IKF
0.055
MJS
0
voltage
volts
current
amps
ISE
1.77e-11
FC
0.5
NE
2.1
TF
14e-12
BR
1
XTF
3
NR
1
VTF
25
0.1
VAR
Infinity
ITF
IKR
Infinity
PTF
0
ISC
0
TR
0.3e-9
1.11
NC
2
EG
RE
0.6
XTB
0
RB
12
XTI
3
RBM
3.7
KF
0
IRB
1.2e-5
AF
1
RC
8
CJE
1.2e-12
VJE
0.77
MJE
0.5
CJC
0.8e-12
VJC
0.27
(1) Gummel-Poon Model
MODEL RANGE
Frequency: 0.05 to 5.0 GHz
Bias:
VCE = 8.0 V, IC = 7 mA to 30 mA
Date:
11/1/96
NE681 SERIES
NE68139 NONLINEAR MODEL
SCHEMATIC
Q1
CCBPKG
CCB
LCX
LBX
LB
Collector
LC
Base
CCE
CBEPKG
CCEPKG
LE
LEX
Emitter
BJT NONLINEAR MODEL PARAMETERS(1)
UNITS
Parameters
Q1
Parameters
Q1
IS
2.7e-16
MJC
0.56
BF
185.0
XCJC
0
NF
1.02
CJS
0
VAF
15.0
VJS
0.750
IKF
0.055
MJS
0
ISE
1.77e-11
FC
0.50
NE
2.1
TF
14.0e-12
Parameter
time
capacitance
inductance
resistance
voltage
current
BR
1.0
XTF
3.0
NR
1.0
VTF
25.0
ADDITIONAL PARAMETERS
Parameters
CCB
CCE
LB
LC
LE
CCBPKG
CCEPKG
CBEPKG
LBX
LCX
LEX
VAR
Infinity
ITF
0.1
IKR
Infinity
PTF
0
ISC
0
TR
0.3e-9
NC
2.0
EG
1.11
RE
0.6
XTB
0
3.0
RB
12.0
XTI
RBM
3.7
KF
0
IRB
1.2e-5
AF
1.0
RC
8.0
CJE
1.2e-12
VJE
0.77
MJE
0.50
CJC
0.8e-12
VJC
0.27
(1) Gummel-Poon Model
Units
seconds
farads
henries
ohms
volts
amps
68139
0.07e-12
0.01e-12
0.88e-9
0.79e-9
0.7e-9
0.165e-12
0.165e-12
0.01e-12
0.39e-9
0.39e-9
0.2e-9
MODEL RANGE
Frequency: 0.1 to 3.0 GHz
Bias:
VCE = 2.5 V to 8.0 V, IC = 0.3 mA to 7 mA
Date:
6/17/96
NE681 SERIES
OUTLINE DIMENSIONS (Units in mm)
NE68100 (CHIP)
(Chip Thickness: 160 mm)
0.35±0.01
0.13
BASE
EMITTER
0.02
0.35±0.01
0.03φ
PACKAGE OUTLINE 18
RECOMMENDED P.C.B. LAYOUT
PACKAGE OUTLINE 18
2.1 ± 0.2
+0.10
0.3 -0.05
(LEADS 2, 3, 4)
1.25 ± 0.1
0.8
3
2
3 0.65
2
0.65
2.0 ± 0.2
1.3
0.60
0.6
0.65
1
4
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
+0.10
0.4 -0.05
0.3
0.9 ± 0.1
1.25
1
+0.10
0.15 -0.05
0 to 0.1
4
1.7
PACKAGE OUTLINE 19
1
PACKAGE OUTLINE 19
RECOMMENDED P.C.B. LAYOUT
1.6 ± 0.1
0.8 ± 0.1
2
1.3
1.6 ± 0.1
0.5
1.0
+0.1
0.2 - 0
3
2
+0.10
0.3 -0.05
LEAD 3 ONLY
1
3
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
1.0
0.5
0.6
0.75 ± 0.05
0.6
1
0.6
+0.1
0.15 -0.05
0 to 0.1
PACKAGE OUTLINE 30
PACKAGE OUTLINE 30
RECOMMENDED P.C.B. LAYOUT
2.1 ± 0.2
1.25 ± 0.1
1.7
0.65
2.0 ± 0.2
2
2
1.3
3
+0.1
0.3 -0.05
(ALL LEADS)
3
1
MARKING
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
0.15
0.9 ± 0.1
1.3
0.65
0.6
1
0.8
0 to 0.1
+0.10
0.15 -0.05
NE681 SERIES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 33
(SOT-23)
PACKAGE OUTLINE 33
RECOMMENDED P.C.B. LAYOUT
+0.2
2.8 -0.3
2.4
2
2.9 ± 0.2 0.95
2
1.9
+0.10
0.4 -0.05
(ALL LEADS)
3
3
1.9
1
+0.10
0.65 -0.15
+0.2
1.5 -0.1
1.1 to 1.4
0.8
0.95
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
0.8
1
1.0
+0.10
0.16 -0.06
0 to 0.1
PACKAGE OUTLINE 35
(MICRO-X)
E
3.8 MIN
ALL LEADS
0.5±0.06
B
C
PIN CONNECTIONS
1.Collector
2. Emitter
3. Base
4. Emitter
45˚
E
2.55±0.2
φ2.1
+0.06
0.1 -0.04
1.8 MAX
0.55
PACKAGE OUTLINE 39
RECOMMENDED P.C.B. LAYOUT
PACKAGE OUTLINE 39
+0.2
2.8 -0.3
+0.2
1.5 -0.1
2
2.9 ± 0.2 0.95
+0.10
0.4 -0.05
(LEADS 2, 3, 4)
2.4
3
3
2
1.9
0.85
PIN CONNECTIONS
1.Collector
2. Emitter
3. Base
4. Emitter
4
1
+0.10
0.6 -0.05
+0.2
1.1 -0.1
1.9
1.0
0.8
0.16 +0.10
-0.06
1
5˚
5˚
0 to 0.1
4
1.0
NE681 SERIES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 39R
PACKAGE OUTLINE 39R
RECOMMENDED P.C.B. LAYOUT
+0.2
2.8 -0.3
+0.10
0.6 -0.05
2.4
+0.2
1.5 -0.1
3
2
3
2
0.85
1.8
2.9 ± 0.2
0.95
1
1.1+0.2
-0.1
4
+0.10
0.4 -0.05
(LEADS 1, 3, 4)
0.16 +0.10
-0.06
0.8
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
1.9
1.0
1
4
1.0
5˚
5˚
0 to 0.1
ORDERING INFORMATION (Solder Contains Lead)
PART
NUMBER
QUANTITY
PACKAGING
NE68100
NE68118-T1
NE68119-T1
NE68130-T1
NE68133-T1B
NE68135
NE68139-T1
NE68139R-T1
100
3000
3000
3000
3000
1
3000
3000
Waffle Pack
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
ESD Bag
Tape & Reel
Tape & Reel
ORDERING INFORMATION (Pb-Free)
PART
NUMBER
QUANTITY
PACKAGING
NE68100
NE68118-T1-A
NE68119-T1-A
NE68130-T1-A
NE68133-T1B-A
NE68135
NE68139-T1-A
NE68139R-T1
100
3000
3000
3000
3000
1
3000
3000
Waffle Pack
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
ESD Bag
Tape & Reel
Tape & Reel
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.
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