NTND31200PZ Small Signal MOSFET −20 V, −127 mA, Dual P−Channel, 0.65 mm x 0.90 mm x 0.4 mm XLLGA6 Package www.onsemi.com Features • Dual P−Channel MOSFET • Offers a Low RDS(ON) Solution in the Ultra Small • V(BR)DSS 0.65 mm × 0.90 mm Package These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant RDS(ON) MAX ID Max 5.0 W @ −4.5 V 6.0 W @ −2.5 V −20 V −127 mA 7.0 W @ −1.8 V 10.0 W @ −1.5 V Applications • • • • P−Channel MOSFET Small Signal Load Switch Analog Switch High Speed Interfacing Optimized for Power Management in Ultra Portable Products S1 S2 G1 G2 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Symbol Value Unit VDSS −20 V VGS ±8 V ID −127 mA Steady State TA = 25°C TA = 85°C −91 t≤5s TA = 25°C −146 Steady State TA = 25°C PD D2 XLLGA6 Case 713AC mW 125 PINOUT DIAGRAM t≤5s Pulsed Drain Current D1 166 tp = 10 ms IDM −488 mA TJ, TSTG −55 to 150 °C Source Current (Body Diode) (Note 2) IS −200 mA Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Operating Junction and Storage Temperature 6 D1 5 G2 4 S2 S1 1 G1 2 D2 3 (Bottom View) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% MARKING DIAGRAM EM 1 E M = Specific Device Code = Date Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2015 November, 2015 − Rev. 0 1 Publication Order Number: NTND31200PZ/D NTND31200PZ THERMAL RESISTANCE RATINGS Parameter Symbol Junction-to-Ambient (Note 3) Steady State t≤5s Max Unit °C/W RqJA 998 751 3. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = −250 mA −20 Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −5 V TJ = 25°C −50 nA TJ = 85°C −200 nA VGS = 0 V, VDS = −16 V TJ = 25°C −100 IGSS VDS = 0 V, VGS = ±5.0 V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA Drain-to-Source On Resistance RDS(ON) VGS = −4.5 V, ID = −100 mA Gate-to-Source Leakage Current V ±100 nA −1.0 V 2.1 5.0 W VGS = −2.5 V, ID = −50 mA 2.7 6.0 VGS = −1.8 V, ID = −20 mA 3.4 7.0 VGS = −1.5 V, ID = −10 mA 4.2 10.0 ON CHARACTERISTICS −0.4 Forward Transconductance gFS VDS = −5.0 V, ID = −125 mA 0.35 Forward Diode Voltage VSD VGS = 0 V, IS = −10 mA −0.6 Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = −15 V 12.8 Output Capacitance COSS 2.8 Reverse Transfer Capacitance CRSS 2.0 S −1.0 V CAPACITANCES pF SWITCHING CHARACTERISTICS, VGS = 4.5 V Turn-On Delay Time Rise Time td(ON) tr Turn-Off Delay Time Fall Time VGS = −4.5 V, VDD = −15 V, ID = −200 mA, RG = 2.0 W 37 ns 71 td(OFF) 280 tf 171 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device NTND31200PZTAG Package Shipping† XLLGA6 (Pb−Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 NTND31200PZ TYPICAL CHARACTERISTICS 0.25 0.25 VGS = −2 V to −5 V VDS = −5 V −ID, DRAIN CURRENT (A) −ID, DRAIN CURRENT (A) −1.8 V 0.20 −1.6 V 0.15 −1.4 V 0.10 −1.2 V 0.05 0.20 0.15 0.10 TJ = 25°C 0.05 TJ = −55°C 1 2 3 4 0 5 1.0 1.5 2.0 −VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 5.0 TJ = 25°C ID = −0.12 A 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 1.0 0.5 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.0 TJ = 25°C VGS = −1.5 V 4.5 4.0 VGS = −1.8 V 3.5 3.0 VGS = −2.5 V 2.5 VGS = −4.5 V 2.0 1.5 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 −VGS, GATE−TO−SOURCE VOLTAGE (V) −ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1000 1.6 1.5 1.4 TJ = 150°C VGS = −4.5 V ID = −0.1 A −IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE TJ = 125°C 0 0 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 −50 TJ = 125°C 100 TJ = 85°C 10 1 0.1 TJ = 25°C 0.01 −25 0 25 50 75 100 125 150 0 5 10 15 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 20 NTND31200PZ TYPICAL CHARACTERISTICS 1000 25 VGS = 0 V TJ = 25°C f = 1 MHz C, CAPACITANCE (pF) 20 VGS = −4.5 V VDS = −15 V ID = −0.2 A td(off) t, TIME (ns) CISS 15 10 tf 100 tr td(on) COSS 5 CRSS 10 0 0 5 10 15 1 20 RG, GATE RESISTANCE (W) Figure 7. Capacitance Variation Figure 8. Resistive Switching Time Variation vs. Gate Resistance 1 VGS ≤ −4.5 V Single Pulse TC = 25°C VGS = 0 V −ID, DRAIN CURRENT (A) 0.009 0.008 0.007 TJ = 125°C 0.006 0.005 TJ = 25°C 0.004 10 ms 0.1 100 ms 1 ms 10 ms 0.01 TJ = −55°C 0.002 RqWJA(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 1000 0.4 0.5 0.6 0.7 dc RDS(on) Limit Thermal Limit Package Limit 0.003 0.3 100 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.010 −IS, SOURCE CURRENT (A) 10 0.001 0.8 0.9 1.0 0.1 1 10 100 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current Figure 10. Maximum Rated Forward Biased Safe Operating Area Duty Cycle = 0.5 0.2 0.1 100 0.05 0.02 10 0.01 Single Pulse 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (s) Figure 11. Thermal Response www.onsemi.com 4 1 10 100 1000 NTND31200PZ PACKAGE DIMENSIONS XLLGA6 0.90x0.65 CASE 713AC ISSUE O PIN ONE REFERENCE 0.05 C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 . 2. CONTROLLING DIMENSION: MILLIMETERS. 3. POSITIONAL TOERANCE APPLIES TO ALL SIX LEADS. A B D ÇÇ ÇÇ E DIM A A1 b b2 D E e e1 e2 e3 e4 L L2 0.05 C 2X TOP VIEW 0.05 C A 0.05 C A1 SIDE VIEW C SEATING PLANE e1 e e2 1 2 3 RECOMMENDED SOLDERING FOOTPRINT* e4 4X L2 0.345 PITCH e3 2X 6 L 2X MILLIMETERS MIN MAX 0.340 0.440 0.000 0.050 0.200 0.300 0.080 0.180 0.900 BSC 0.650 BSC 0.295 BSC 0.340 BSC 0.300 BSC 0.208 BSC 0.158 BSC 0.215 0.315 0.115 0.215 5 4 4X b BOTTOM VIEW b2 0.10 M C A B 0.05 M C 2X 0.300 PITCH 4X 0.300 0.300 NOTE 3 0.781 2X 0.400 1 4X 0.180 0.340 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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