SSM3K7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K7002FU High Speed Switching Applications Analog Switch Applications • Small package • Low ON resistance Unit: mm : Ron = 3.3 Ω (max) (@VGS = 4.5 V) 2.1± 0.1 : Ron = 3.2 Ω (max) (@VGS = 5 V) 1.25 ± 0.1 60 V V ± 20 ID 200 Pulse IDP 800 Drain power dissipation (Ta = 25°C) PD (Note 1) mA 150 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C +0.1 0.3 - 0 3 0~0.1 VGSS 2 +0.1 0.15 -0.05 VDS 1.3 ± 0.1 Unit DC Gate-Source voltage Drain current Rating 1 0.7 Drain-Source voltage Symbol 0.9 ± 0.1 Characteristics 2.0 ± 0.2 Absolute Maximum Ratings (Ta = 25°C) 0.65 0.65 : Ron = 3.0 Ω (max) (@VGS = 10 V) 1. GATE Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6mm × 3) USM JEDEC 2. SOURCE 3. DRAIN ⎯ JEITA SC-70 TOSHIBA 2-2E1E 0.6 mm 1.0 mm Marking Equivalent Circuit (top view) 3 3 NC 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01 SSM3K7002FU Electrical Characteristics (Ta = 25°C) Characteristics Symbol Min Typ Max Unit VGS = ± 20 V, VDS = 0 ⎯ ⎯ ± 10 μA V (BR) DSS ID = 0.1 mA, VGS = 0 60 ⎯ ⎯ V IDSS VDS = 60 V, VGS = 0 ⎯ ⎯ 1 μA Gate leakage current IGSS Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Vth VDS = 10 V, ID = 0.25 mA 1.0 ⎯ 2.5 V ⎪Yfs⎪ VDS = 10 V, ID = 200 mA 170 ⎯ ⎯ mS ID = 500 mA, VGS = 10 V ⎯ 2.0 3.0 ID = 100 mA, VGS = 5 V ⎯ 2.1 3.2 ID = 100 mA, VGS = 4.5 V ⎯ 2.2 3.3 ⎯ 17 ⎯ pF ⎯ 1.4 ⎯ pF ⎯ 5.8 ⎯ pF ⎯ 2.4 4.0 ⎯ 26 40 RDS (ON) Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Switching time Test Condition Turn-on delay time td(on) Turn-off delay time td(off) VDS = 25 V, VGS = 0, f = 1 MHz VDD = 30V, ID = 200 mA, VGS = 0 ~ 10V Ω ns Switching Time Test Circuit (a) Test circuit 0 (b) VIN 10 V 90% IN 50 Ω 10V OUT 10 μs VDD = 30 V Duty < = 1% VIN: tr, tf < 2 ns (Zout = 50 Ω) Common Source Ta = 25°C 10% 0V RL VDD (c) VOUT VDD 10% 90% VDS (ON) tr tf td(on) td(off) Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 250 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. 2 2007-11-01 SSM3K7002FU ID - VDS ID - VGS 1000 1000 Common Source Ta=25°C 900 Common Source VDS=10V 4.5 4.0 100 7 700 Drain current ID (mA) Drain current ID (mA) 800 5 10 600 3.3 500 3.0 400 2.7 300 2.5 200 100 Ta=100°C 10 0.1 VGS=2.3V 0.01 0 0 0.5 1 1.5 2 0 1 Drain-Source on resistance RDS(ON) (Ω) Drain-Source on resistance RDS(ON) (Ω) VGS=4.5V 5.0V 2 10V 1 0 10 4 5 5 Common Source Ta=25°C 3 3 RDS(ON) - VGS RDS(ON) - ID 5 4 2 Gate-Source voltage VGS (V) Drain-Source voltage VDS (V) 100 Drain current ID (mA) Common Source ID=100mA 4 Ta=100°C 3 25°C 2 -25°C 1 0 0 1000 2 4 6 8 Gate-Source voltage VGS (V) RDS(ON) - Ta 10 Vth - Ta 5 2 Common Source 4 VGS=4.5V,ID=100mA 3 10V,500mA 2 Common Source ID=0.25mA VDS=10V 1.8 Gate threshold voltage Vth(V) Drain-Source on resistance RDS(ON) (Ω) -25°C 25°C 1 5.0V,100mA 1 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 -25 0 25 50 75 100 125 Ambient temperature Ta (°C) 150 -25 3 0 25 50 75 100 125 Ambient temperature Ta (°C) 150 2007-11-01 SSM3K7002FU |Yfs| - ID IDR - VDS 1000 Drain reverse current IDR (mA) Forward transfer admittance |Yfs| (mS) 1000 100 Common source VDS=10V Ta=25°C Common Source VGS=0V Ta=25°C 900 800 700 D 600 500 IDR G 400 S 300 200 100 0 10 10 100 Drain current ID (mA) 0 1000 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 Drain-Source voltage VDS (V) C - VDS t - ID 10000 Common Source VGS=0V f=1MHz Ta=25°C Switching time t (ns) Capacitance C (pF) 100 Ciss 10 Coss Common Source VDD=30V VGS=0~10V Ta=25°C tf 1000 100 td(off) 10 td(on) Crss tr 1 1 0.1 1 10 Drain-Source voltage VDS (V) 1 100 10 100 Drain current ID (mA) 1000 PD - Ta Drain power dissipation PD (mW) 250 mounted on FR4 board （25.4mm×25.4mm×1.6t Cu Pad：0.6mm2×3） 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 4 2007-11-01 SSM3K7002FU RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01