IRF830
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Ease of Paralleling
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
G
BVDSS
500V
RDS(ON)
1.5Ω
ID
4.5A
S
Description
APEC MOSFET provide the power designer with the best combination of fast
switching , lower on-resistance and reasonable cost.
G
D
S
TO-220(P)
The TO-220 and package is universally preferred for all commercial-industrial
applications. The device is suited for switch mode power supplies ,DC-AC
converters and high current high speed switching circuits.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
4.5
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
2.8
A
18
A
74
W
0.59
W/℃
101
mJ
4.5
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
1.7
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data & specifications subject to change without notice
200420071-1/4
IRF830
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
500
-
-
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=2.7A
-
-
1.5
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=2.7A
-
2.4
-
S
VDS=500V, VGS=0V
-
-
25
uA
Drain-Source Leakage Current (Tj=125 C)
VDS=400V, VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=3.1A
-
28
45
nC
IDSS
o
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=400V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
16
-
nC
3
td(on)
Turn-on Delay Time
VDD=250V
-
10
-
ns
tr
Rise Time
ID=3.1A
-
15
-
ns
td(off)
Turn-off Delay Time
RG=12Ω,VGS=10V
-
41
-
ns
tf
Fall Time
RD=80.6Ω
-
20
-
ns
Ciss
Input Capacitance
VGS=0V
-
710
1140
pF
Coss
Output Capacitance
VDS=25V
-
170
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
3.0
Ω
Min.
Typ.
Tj=25℃, IS=4.5A, VGS=0V
-
-
1.5
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
3
3
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=3.1A, VGS=0V,
-
370
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
3.9
-
uC
Notes:
1.Pulse width limited by Max. junction temperature.
o
2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT
OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
2/4
IRF830
8
5
4
10V
7 .0V
6 .0V
3
5 .0 V
o
T C =25 C
ID , Drain Current (A)
6
ID , Drain Current (A)
T C =150 o C
10V
7.0V
6.0V
4
2
V G = 4. 5 V
5.0V
2
1
V G =4.5V
0
0
0
4
8
12
16
0
20
V DS , Drain-to-Source Voltage (V)
4
8
12
16
20
24
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.2
1.1
Normalized RDS(ON)
Normalized BVDSS (V)
I D =2.7A
V G =10V
1
2
1
0.9
0
0.8
-50
0
50
100
-50
150
o
T j , Junction Temperature ( C)
0
50
100
150
T j , Junction Temperature ( o C )
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.4
8
1.2
T j = 150 o C
Normalized VGS(th) (V)
10
T j = 25 o C
IS (A)
6
4
1
0.8
0.6
2
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
IRF830
f=1.0MHz
10000
12
I D =3.1A
V DS =100V
V DS =250V
V DS =400V
8
1000
C iss
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C oss
4
100
C rss
2
0
10
0
10
20
30
40
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
10
ID (A)
100us
1ms
1
o
T c =25 C
Single Pulse
10ms
100m
1s
DC
0.1
1
10
100
1000
Normalized Thermal Response (Rthjc)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4