BYT115/200/400 Vishay Telefunken Ultra Fast Recovery Silicon Power Rectifier Features D D D D D D Multiple diffusion Epitaxial – planar Ultra fast forward recovery time Ultra fast reverse recovery time Low reverse current Very good reverse current stability at high temperature D Low thermal resistance 14282 Applications Fast rectifiers in S.M.P.S Freewheeling diodes and snubber diodes in motor control circuits Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage Peak forward surge current Repetitive peak forward current Average forward current Junction and storage temperature range Test Conditions Type BYT115/200 BYT115/400 tp=10ms Symbol VR=VRRM VR=VRRM IFSM IFRM IFAV Tj=Tstg Value 200 400 100 30 15 –55...+150 Unit V V A A A °C Maximum Thermal Resistance Tj = 25_C Parameter Junction case Junction ambient Rev. A2, 24-Jun-98 Test Conditions Symbol RthJC RthJA Value 1.75 85 Unit K/W K/W 1 (5) BYT115/200/400 Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage g Test Conditions IF=15A IF=15A, Tj=100°C VR=VRRM VR=VRRM; Tj=100°C IF=15A, diF/dt 50A/ms Reverse current Type Symbol Min Typ Max VF 1.3 VF 1.2 IR 2 IR 0.2 tfr 350 VFP 4 x Forward recovery time Turn on transient peak voltage Reverse recovery y characteristics x I =15A, di /dtx–150A/ms, IF=15A, diF/dt –150A/ms, VBatt=200V Reverse recovery time F IRM tIRM trr F VBatt=200V IF=0.5A, IR=1A, iR=0.25A BYT115/200 BYT115/400 Unit V V mA mA ns V 12 75 140 A ns ns trr trr 35 50 ns ns Characteristics (Tj = 25_C unless otherwise specified) 16 I FAV– Average Forward Current ( A ) I R – Reverse Current ( mA ) 1000 100 10 1 VR = 200/400 V 0.1 0 94 9510 40 80 120 160 12 RthJA=5K/W 8 RthJA=10K/W 4 RthJA=85K/W 0 200 Tj – Junction Temperature ( °C ) Figure 1. Typ. Reverse Current vs. Junction Temperature 2 (5) RthJC=1.75K/W 0 94 9508 40 80 120 160 200 Tamb – Ambient Temperature ( °C ) Figure 2. Max. Average Forward Current vs. Ambient Temperature Rev. A2, 24-Jun-98 BYT115/200/400 Vishay Telefunken 20 IRM – Reverse Recovery Current ( A ) IF – Forward Current ( A ) 100 10 1 0.1 15 10 5 0 0.01 0 0.6 1.2 1.8 3.0 2.4 VF – Forward Voltage ( V ) 94 9509 0 94 9513 1000 200 250 300 350 600 400 dIF/dt=150A/ms 200 200 150 100 50 0 0 0 3 6 9 12 15 21 18 IF – Forward Current ( A ) 94 9515 0 94 9512 Figure 4. Reverse Recovery Charge vs. Forward Current 160 120 80 40 50 100 150 200 250 300 350 –dIF/dt – Forward Current Rate of Change ( A/ms ) Figure 7. Reverse Recovery Time vs. Forward Current Rate of Change Q rr – Reverse Recovery Charge ( nC ) t IRM – Reverse Recovery Time for IRM ( ns ) 150 250 800 1200 1000 800 600 400 200 0 0 0 94 9514 100 Figure 6. Reverse Recovery Current vs. Forward Current Rate of Change t rr – Reverse Recovery Time ( ns ) Q rr – Reverse Recovery Charge ( nC ) Figure 3. Typ. Forward Current vs. Forward Voltage 50 –dIF/dt – Forward Current Rate of Change ( A/ms ) 50 100 150 200 250 300 350 –dIF/dt – Forward Current Rate of Change ( A/ms ) Figure 5. Reverse Recovery Time for IRM vs. Forward Current Rate of Change Rev. A2, 24-Jun-98 0 94 9511 50 100 150 200 250 300 350 –dIF/dt – Forward Current Rate of Change ( A/ms ) Figure 8. Reverse Recovery Charge vs. Forward Current Rate of Change 3 (5) BYT115/200/400 Vishay Telefunken Dimensions in mm 14276 4 (5) Rev. A2, 24-Jun-98 BYT115/200/400 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Rev. A2, 24-Jun-98 5 (5)