AH118 / ECG099 ¼ Watt, High Linearity InGaP HBT Amplifier Product Features • 60 – 3500 MHz • +24.7 dBm P1dB • +40.5 dBm Output IP3 • 20.4 dB Gain @ 900 MHz • 16.5 dB Gain @ 1900 MHz • +5V Single Positive Supply • Available in lead-free / green SOT-89 SMT Package Style Applications • Final stage amplifiers for Repeaters • Mobile Infrastructure • DBS / WLL / W-LAN • Defense / Homeland Security Product Description Functional Diagram The AH118 / ECG099 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance across a broad range with +40.5 dBm OIP3 and +24.7 dBm of compressed 1dB power. The AH118 / ECG099 is available in a lead-free/green/RoHS-compliant SOT-89 package. All devices are 100% RF and DC tested. GND 4 The AH118 / ECG099 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. Internal biasing allows the AH118 to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations. Specifications (1) Parameter Product Information 1 2 3 RF IN GND RF OUT Function Input / Base Output / Collector Ground Pin No. 1 3 2, 4 Typical Performance (3) Units Min MHz MHz dB dB dB dBm dBm 60 Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) IS-95A Channel Power @ -45 dBc ACPR 13.5 +23 +39.5 Typ Max Parameter 3500 1900 16.5 12 18 +24.7 +40.5 Frequency S21 - Gain S11 - Input R.L. S22 - Output R.L. Output P1dB Output IP3 IS-95A Channel Power MHz dB dB dB dBm dBm 900 20.4 -15 -12 +24.2 +40 1900 16.5 -12 -18 +24.7 +40.5 dBm +18.2 +18 +18 W-CDMA Channel Power dBm dBm W-CDMA Channel Power dBm +16.7 Noise Figure Operating Current Range Device Voltage dB mA V 4.3 160 +5 @ -45 dBc ACLR, 2140 MHz 140 Units @ -45 dBc ACPR, @ -45 dBc ACLR Noise Figure Supply Bias 175 Typical dB 2140 16.3 -15 -16 +24.7 +40.5 +16.7 4.0 4.3 4.8 +5 V @ 160 mA 3. Typical parameters reflect performance in a tuned application circuit: Vsupply = +5 V, I = 160 mA, +25° C 1. Test conditions unless otherwise noted: 25ºC, Vsupply = +5 V, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Ordering Information Absolute Maximum Rating Part No. Parameter Rating AH118-89* Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Junction Temperature -40 to +85 °C -65 to +150 °C +15 dBm +6 V 220 mA +250 °C ECG099B* Operation of this device above any of these parameters may cause permanent damage. AH118-89G AH118-89PCB900 AH118-89PCB1900 AH118-89PCB2140 Description High Linearity InGaP HBT Amplifier (lead-tin SOT-89 Pkg) High Linearity InGaP HBT Amplifier (lead-tin SOT-89 Pkg) High Linearity InGaP HBTAmplifier (lead-free/green/RoHS-compliant SOT-89 Pkg) 900 MHz Evaluation Board 1900 MHz Evaluation Board 2140 MHz Evaluation Board * This package is being phased out in favor of the green package type which is backwards compatible for existing designs. Refer to Product Change Notification WJPCN06MAY05TC1 on the WJ website. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 1 of 7 June 2005 AH118 / ECG099 The Communications Edge TM ¼ Watt, High Linearity InGaP HBT Amplifier Product Information Typical Device Data S-Parameters (VDevice = +5 V, ICC = 160 mA, 25° C, unmatched 50 ohm system) S11 0 3. 1.0 0 3. 0 4. 25 0. 2 20 0 4. 5.0 5.0 0. 2 5 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 10.0 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 10 0.6 0 0.2 15 0.4 10.0 -10.0 -4 .0 -5. 0 -3 .0 -0.8 Swp Min 0.01GHz .0 -2 .4 -0 Swp Min 0.01GHz -1.0 2.5 -0 .6 2 -0.8 1 1.5 Frequency (GHz) -1.0 0.5 -0 .6 0 .0 -2 .4 -0 -10 2 -0 . -3 .0 2 -0 . -4 .0 -5. 0 0 -5 -10.0 Gain (dB) Swp Max 6GHz 2. 0 0. 4 30 0.8 2. 0 DB(GMax) 6 0. 1.0 0.8 6 0. DB(|S[2,1]|) 35 S22 Swp Max 6GHz 0. 4 Gain / Maximum Stable Gain 40 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance plots are shown from 50 – 6000 MHz, with markers placed at 0.5 – 6.0 GHz in 0.5 GHz increments. S-Parameters (VDevice = +5 V, ICC = 160 mA, 25°C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -2.69 -2.16 -1.91 -1.77 -1.60 -1.45 -1.40 -1.25 -1.20 -1.17 -1.13 -1.11 -1.05 -0.99 -0.93 -0.95 -0.92 -173.38 -177.19 178.30 172.47 166.83 161.09 155.39 149.59 143.79 137.57 132.05 126.72 121.50 115.58 110.41 105.30 100.11 21.74 19.63 18.22 17.13 15.99 14.97 13.84 12.76 11.71 10.63 9.75 8.88 8.00 7.31 6.52 5.73 5.05 153.70 150.82 148.19 135.41 121.91 109.02 97.28 86.83 76.95 68.15 59.55 52.22 45.09 37.40 30.66 23.51 17.07 -31.02 -30.31 -29.87 -29.83 -29.49 -29.18 -28.70 -28.63 -28.30 -27.94 -27.63 -27.51 -27.06 -27.02 -26.78 -26.66 -26.61 11.24 7.90 5.01 4.07 2.79 2.11 1.64 -0.09 -1.34 -4.47 -7.00 -8.43 -11.00 -14.19 -18.24 -20.10 -23.28 -7.02 -5.57 -5.06 -4.77 -4.60 -4.44 -4.26 -4.14 -3.97 -4.00 -3.86 -3.84 -3.62 -3.55 -3.46 -3.34 -3.30 -148.17 -162.45 -173.51 177.87 171.65 166.08 160.40 155.01 149.63 144.03 139.02 134.24 129.30 124.42 119.42 114.26 109.29 Application Circuit PC Board Layout Circuit Board Material: .062” total thickness with a .014” Getek top RF layer, 4 layers (other layers added for rigidity), 1 oz copper, Microstrip line details: width = .026”, spacing = .026” The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 2 of 7 June 2005 AH118 / ECG099 The Communications Edge TM ¼ Watt, High Linearity InGaP HBT Amplifier Product Information 900 MHz Application Circuit (AH118-89PCB900) Typical RF Performance at 25°°C Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 900 MHz 20.4 dB -15 dB -12 dB +24.2 dBm Channel Power +18.2 dBm (+11 dBm / tone, 1 MHz spacing) (@-45 dBc ACPR, IS-95 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current Vcc = +5 V CAP ID=C2 C= 56 pF The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. DIODE1 ID= D1 5.6 V Component R1 is shown in the silkscreen but is not used for this configuration. PORT P= 1 Z=50 Ohm +40 dBm CAP ID= C4 C=56 pF 4 dB +5 V 160 mA IND ID=L1 L=33 nH RES ID=L2 R=0 Ohm The capacitor should be placed 19.9° @ 0.9GHz from pin 3 of the AH118. Return Loss -5 20 -10 19 -15 18 -20 ACPR vs. Channel Power S11 1000 800 IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 900 MHz -40 S22 -50 -60 -25 950 PORT P= 2 Z=50 Ohm C9 should be placed between silk screen markers '8' and '9' on the WJ evaluation board. The capacitor should be placed 13.7° @ 0.9GHz from pin 1 of the AH118 21 900 CAP ID=C9 C= 2.4 pF C6 should be placed at the silk screen marker 'F' on the WJ evaluation board. 0 17 CAP ID=C5 C= 56 pF IND ID=L3 L= 3.3 nH SUBCKT ID=U1 NET="AH118" CAP ID= C6 C= 6.8 pF Gain 850 CAP ID= C3 C= 1000 pF size 0805 L2 - the 0 ohm resistor - can be removed (with a thru line) in the final circuit layout. 22 800 CAP ID=C1 C=1e5 pF size 1206 All passive components are of size 0603 unless otherwise noted. -70 850 Frequency (MHz) 900 950 1000 12 13 Frequency (MHz) 14 15 16 17 18 19 Output Channel Power (dBm) 1900 MHz Application Circuit (AH118-89PCB1900) Typical RF Performance at 25°°C Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 (+11 dBm / tone, 1 MHz spacing) Channel Power (@-45 dBc ACPR, IS-95 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current Vcc = +5 V 1900 MHz 16.5 dB -12 dB -18 dB +24.7 dBm CAP ID=C2 C= 56 pF The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. DIODE1 ID= D1 5.6 V Component R1 is shown in the silkscreen but is not used for this configuration. PORT P= 1 Z=50 Ohm +40.5 dBm IND ID=L2 L=4.7 nH CAP ID= C7 C=2.7 pF 4.3 dB +5 V 160 mA IND ID=L1 L=18 nH CAP ID= C4 C=56 pF +18 dBm 17 -5 16 -10 15 -15 14 -20 Frequency (MHz) 2000 1800 C9 should be placed at silk screen marker '4' on the WJ evaluation board. ACPR vs. Channel Power S11 -40 S22 IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 1900 MHz -50 -60 -25 1950 CAP ID=C9 C= 1.5 pF PORT P= 2 Z=50 Ohm The capacitor should be placed 18.4° @ 1.9GHz from pin 3 of the AH118. Return Loss 13 CAP ID=C5 C= 56 pF The capacitor should be placed 4.6° @ 1.9GHz from pin 1 of the AH118 0 1900 RES ID=L3 R=0 Ohm SUBCKT ID=U1 NET="AH118" C7 should be placed at the silk screen marker 'A' on the WJ evaluation board. Gain 1850 CAP ID= C3 C= 1000 pF size 0805 L3 - the 0 ohm resistor - can be removed (with a thru line) in the final circuit layout. 18 1800 CAP ID=C1 C=1e5 pF size 1206 All passive components are of size 0603 unless otherwise noted. -70 1850 1900 1950 2000 Frequency (MHz) 12 13 14 15 16 17 18 19 Output Channel Power (dBm) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 3 of 7 June 2005 AH118 / ECG099 The Communications Edge TM ¼ Watt, High Linearity InGaP HBT Amplifier Product Information 2140 MHz Application Circuit (AH118-89PCB2140) Typical RF Performance at 25°°C Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 +40.5 dBm Channel Power +16.7 dBm Vcc = +5 V 2140 MHz 16.3 dB -15 dB -16 dB +24.7 dBm (+11 dBm / tone, 1 MHz spacing) (@-45 dBc ACPR, IS-95 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current CAP ID=C2 C= 56 pF The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. DIODE1 ID= D1 5.6 V Component R1 is shown in the silkscreen but is not used for this configuration. CAP ID= C4 C=56 pF PORT P= 1 Z=50 Ohm IND ID=L1 L=18 nH CAP ID= L2 C= 1.5 pF 4.8 dB +5 V 160 mA RES ID=L3 R=0 Ohm SUBCKT ID=U1 NET="AH118" CAP ID= C6 C= 1.8 pF C6 should be placed at the silk screen marker 'F' on the WJ evaluation board. The capacitor should be placed 32.6° @ 2.14GHz from pin 1 of the AH118 Gain Return Loss -5 -40 16 -10 -45 15 -15 -50 14 -20 -55 S11 -35 S22 -25 2150 2170 Frequency (MHz) 2110 CAP ID=C9 C= 1.2 pF PORT P= 2 Z=50 Ohm C9 should be placed at silk screen marker '5' on the WJ evaluation board. ACLR vs. Channel Power 17 13 CAP ID=C5 C= 56 pF The capacitor should be placed 26.7° @ 2.14G Hz from pin 3 of the AH118. 0 2130 CAP ID= C3 C= 1000 pF size 0805 L3 - the 0 ohm resistor - can be removed (with a thru line) in the final circuit layout. 18 2110 CAP ID=C1 C=1e5 pF size 1206 All passive components are of size 0603 unless otherwise noted. 3GPP W-CDMA, Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz -60 2130 2150 2170 12 Frequency (MHz) 13 14 15 16 17 18 Output Channel Power (dBm) 3500 MHz Application Circuit Typical RF Performance at 25°°C Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 +38.5 dBm Noise Figure Device / Supply Voltage Quiescent Current 5.0 dB +5 V 160 mA (+11 dBm / tone, 1 MHz spacing) 3500 MHz 8.5 dB -12 dB -12 dB +23.5 dBm Vcc = +5 V CAP ID=C1 C=1e5 pF size 1206 All passive components are of size 0603 unless otherwise noted. CAP ID=C2 C=56 pF The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically required in the final circuit layout in a system using a DC regulator. DIODE1 ID=D1 5.6 V Component R1 is shown in the silkscreen but is not used for this configuration. L3 - the 0 ohm resistor - can be removed (with a thru line) in the final circuit layout. PORT P=1 Z=50 Ohm IND ID=L1 L=15 nH CAP ID=C4 C=27 pF IND ID=L2 L=5.6 nH CAP ID=C7 C=0.2 pF CAP ID=C3 C=1000 pF size 0805 SUBCKT ID=U1 NET="AH118" CAP ID=C5 C=27 pF PORT P=2 Z=50 Ohm RES ID=L3 R=0 Ohm CAP ID=C9 C=0.2 pF Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 4 of 7 June 2005 AH118 / ECG099 The Communications Edge TM ¼ Watt, High Linearity InGaP HBT Amplifier Product Information AH118-89 (SOT-89 Package) Mechanical Information This package may contain lead-bearing materials. The plating material on the leads is SnPb. Outline Drawing Product Marking The component will be marked with an “AH118” designator with an alphanumeric lot code on the top surface of the package. Tape and reel specification for this part is located on the website in the “Application Notes” section. ESD / MSL Information ESD Rating: Value: Test: Standard: Land Pattern Class 1A Passes between 250 and 500V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +235° C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes Thermal Specifications Parameter Rating Operating Case Temperature Thermal Resistance (1) Junction Temperature (2) -40 to +85° C 92° C / W 159° C Notes: 1. The thermal resistance is referenced from the hottest part of the junction to the ground tab (pin 4). 2. This corresponds to the typical biasing condition of +5V, 160 mA at an 85° C ground tab temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247° C. 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. MTTF vs. GND Tab Temperature 100000 10000 1000 100 60 70 80 90 100 110 120 Tab Temperature (°C) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 5 of 7 June 2005 AH118 / ECG099 The Communications Edge TM ¼ Watt, High Linearity InGaP HBT Amplifier Product Information AH118-89G (Green / Lead-free SOT-89 Package) Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260°C reflow temperature) and leaded (maximum 245°C reflow temperature) soldering processes. The plating material on the leads is NiPdAu. Outline Drawing Product Marking The component will be marked with an “AH118G” designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section. MSL / ESD Rating ESD Rating: Value: Test: Standard: Class 1A Passes between 250 and 500V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +260° C convection reflow Standard: JEDEC Standard J-STD-020 Land Pattern Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Thermal Specifications Parameter Rating Operating Case Temperature Thermal Resistance (1) Junction Temperature (2) -40 to +85° C 92° C / W 159° C Notes: 1. The thermal resistance is referenced from the hottest part of the junction to the ground tab (pin 4). 2. This corresponds to the typical biasing condition of +5V, 160 mA at an 85° C ground tab temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247° C. MTTF vs. GND Tab Temperature 100000 10000 1000 100 60 70 80 90 100 110 120 Tab Temperature (°C) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 6 of 7 June 2005 AH118 / ECG099 The Communications Edge TM ¼ Watt, High Linearity InGaP HBT Amplifier Product Information ECG099B (SOT-89 Package) Mechanical Information This package may contain lead-bearing materials. The plating material on the leads is SnPb. Outline Drawing Product Marking The component will be marked with an “E099” designator with an alphanumeric lot code on the top surface of the package. Tape and reel specification for this part is located on the website in the “Application Notes” section. ESD / MSL Information ESD Rating: Value: Test: Standard: Class 1A Passes between 250 and 500V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +235° C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes Land Pattern Thermal Specifications Parameter Rating Operating Case Temperature Thermal Resistance (1) Junction Temperature (2) -40 to +85° C 92° C / W 159° C Notes: 1. The thermal resistance is referenced from the hottest part of the junction to the ground tab (pin 4). 2. This corresponds to the typical biasing condition of +5V, 160 mA at an 85° C ground tab temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247° C. 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. MTTF vs. GND Tab Temperature 100000 10000 1000 100 60 70 80 90 100 110 120 Tab Temperature (°C) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 7 of 7 June 2005