LINER LTC1435 High speed single/dual n-channel mosfet driver Datasheet

LTC1693
High Speed Single/Dual
N-Channel MOSFET Drivers
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FEATURES
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DESCRIPTIO
The LTC®1693 family drives power N-channel MOSFETs
at high speed. The 1.5A peak output current reduces
switching losses in MOSFETs with high gate capacitance.
Dual MOSFET Drivers in SO-8 Package
or Single MOSFET Driver in MSOP Package
1GΩ Electrical Isolation Between the Dual Drivers
Permits High/Low Side Gate Drive
1.5A Peak Output Current
16ns Rise/Fall Times at VCC = 12V, CL = 1nF
Wide VCC Range: 4.5V to 13.2V
CMOS Compatible Inputs with Hysteresis,
Input Thresholds are Independent of VCC
Driver Input Can Be Driven Above VCC
Undervoltage Lockout
Thermal Shutdown
The LTC1693-1 contains two noninverting drivers while
the LTC1693-2 contains one noninverting and one inverting driver. These dual drivers are electrically isolated and
independent. The LTC1693-3 is a single driver with an
output polarity select pin.
All MOSFET drivers offer VCC independent CMOS input
thresholds with 1.2V of typical hysteresis. They can levelshift the input logic signal up or down to the rail-to-rail VCC
drive for the external MOSFET.
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APPLICATIO S
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Power Supplies
High/Low Side Drivers
Motor/Relay Control
Line Drivers
Charge Pumps
The LTC1693-1 and LTC1693-2 come in an 8-lead SO package. The LTC1693-3 comes in an 8-lead MSOP package.
, LTC and LT are registered trademarks of Linear Technology Corporation.
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The LTC1693 contains an undervoltage lockout circuit and
a thermal shutdown circuit that disable the external
N-channel MOSFET gate drive when activated.
TYPICAL APPLICATION
VIN
48VDC
±10%
+
Two Transistor Forward Converter
C2
1.5µF
63V
C1
330µF
63V
R1
0.068Ω
RETURN
Q1
MTD20NO6HD
12V
C5
1µF
D2
MURS120
12VIN
BOOST
C9
1800pF
5%
NPO
1
2
R5
2.49k
1%
4
3
5
6
7
10
C14
3300pF
R9
12k
C12
100pF
LT1339
TG
20
19
SYNC
5VREF
TS
SL/ADJ
SENSE +
CT
SENSE –
IAVG
BG
PHASE
SS
RUN/SHDN
VC
VFB
VREF
SGND
C15
0.1µF
8
PGND
15
18
11
BAT54
C8
1µF
C4
0.1µF
+
Q2
Si4420
×2
C6
470µF
6.3V
×8
R3
249Ω
1%
R4
1.24k
1%
RETURN
16
13
Q3
MTD20NO6HD
Q4
Si4420
VOUT
1.5V/15A
C3
4700pF
25V
R2
5.1Ω
R6 100Ω
12 R7 100Ω
14
•
D3
MURS120
C7
1µF
L1
1.5µH
T1
13:2
•
LTC1693CS8-2
1
8
VCC1
IN1
2
7
GND1 OUT1
3
6
VCC2
IN2
4
5
GND2 OUT2
17
C11
0.1µF
C10
0.1µF
D1
MURS120
R8
301k
1%
9
R10
10k
1%
D4
MBRO530T1
LTC1693CS8-2
1
8
VCC1
IN1
2
7
GND1 OUT1
3
6
IN2
VCC2
4
5
GND2 OUT2
C13
1µF
C1: SANYO 63MV330GX
C2: WIMA SMD4036/1.5/63/20/TR
C6: KEMET T510X477M006AS (×8)
L1: GOWANDA 50-318
T1: GOWANDA 50-319
1693 TA01
1
LTC1693
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ABSOLUTE MAXIMUM RATINGS
(Note 1)
Supply Voltage (VCC) .............................................. 14V
Inputs (IN, PHASE) ................................... – 0.3V to 14V
Driver Output ................................. – 0.3V to VCC + 0.3V
GND1 to GND2 (Note 5) ..................................... ±100V
Junction Temperature .......................................... 150°C
Operating Ambient Temperature Range
C-Grade ................................................... 0°C to 70°C
I-Grade ................................................–40°C to 85°C
Storage Temperature Range ................. – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
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PACKAGE/ORDER INFORMATION
TOP VIEW
TOP VIEW
IN1 1
8
VCC1
IN1 1
8
VCC1
GND1 2
7
OUT1
GND1 2
7
OUT1
IN2 3
6
VCC2
IN2 3
6
VCC2
GND2 4
5
OUT2
GND2 4
5
OUT2
S8 PACKAGE
8-LEAD PLASTIC SO
S8 PACKAGE
8-LEAD PLASTIC SO
TJMAX = 150°C, θJA = 135°C/ W
TJMAX = 150°C, θJA = 135°C/ W
TOP VIEW
IN
NC
PHASE
GND
8
7
6
5
1
2
3
4
VCC
OUT
NC
NC
MS8 PACKAGE
8-LEAD PLASTIC MSOP
TJMAX = 150°C, θJA = 200°C/ W
ORDER PART
NUMBER
S8 PART
MARKING
ORDER PART
NUMBER
S8 PART
MARKING
ORDER PART
NUMBER
MS8 PART
MARKING
LTC1693-1CS8
LTC1693-1IS8
16931
16931I
LTC1693-2CS8
LTC1693-2IS8
16932
16932I
LTC1693-3CMS8
LTEB
Consult factory for Industrial and Military grade parts.
ELECTRICAL CHARACTERISTICS
The ● denotes specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = 12V, unless otherwise noted.
SYMBOL PARAMETER
CONDITIONS
MIN
VCC
Supply Voltage Range
ICC
Quiescent Current
LTC1693-1, LTC1693-2, IN1 = IN2 = 0V (Note 2)
LTC1693-3, PHASE = 12V, IN = 0V
●
●
ICC(SW)
Switching Supply Current
LTC1693-1, LTC1693-2, COUT = 4.7nF, fIN = 100kHz
LTC1693-3, COUT = 4.7nF, fIN = 100kHz
●
●
TYP
MAX
UNITS
13.2
V
720
360
1100
550
µA
µA
14.4
7.2
20
10
mA
mA
4.5
400
200
Input
VIH
High Input Threshold
●
2.2
2.6
3.1
V
VIL
Low Input Threshold
●
1.1
1.4
1.7
V
IIN
Input Pin Bias Current
±0.01
±10
µA
VPH
PHASE Pin High Input Threshold
(Note 3)
●
4.5
5.5
6.5
V
IPH
PHASE Pin Pull-Up Current
PHASE = 0V (Note 3)
●
10
20
45
µA
VOH
High Output Voltage
IOUT = –10mA
●
11.92
11.97
VOL
Low Output Voltage
IOUT = 10mA
●
RONL
Output Pull-Down Resistance
2.85
Ω
RONH
Output Pull-Up Resistance
3.00
Ω
IPKL
Output Low Peak Current
1.70
A
IPKH
Output High Peak Current
1.40
A
●
Output
2
30
V
75
mV
LTC1693
ELECTRICAL CHARACTERISTICS
The ● denotes specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = 12V, unless otherwise noted.
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Switching Timing (Note 4)
tRISE
Output Rise Time
COUT = 1nF
COUT = 4.7nF
●
●
17.5
48.0
35
85
ns
ns
tFALL
Output Fall Time
COUT = 1nF
COUT = 4.7nF
●
●
16.5
42.0
35
75
ns
ns
tPLH
Output Low-High Propagation Delay
COUT = 1nF
COUT = 4.7nF
●
●
38.0
40.0
70
75
ns
ns
tPHL
Output High-Low Propagation Delay
COUT = 1nF
COUT = 4.7nF
●
●
32
35
70
75
ns
ns
Driver Isolation
RISO
GND1-GND2 Isolation Resistance
LTC1693-1, LTC1693-2 GND1-to-GND2 Voltage = 75V ●
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: Supply current is the total current for both drivers.
Note 3: Only the LTC1693-3 has a PHASE pin.
0.075
1
GΩ
Note 4: All AC timing specificatons are guaranteed by design and are not
production tested.
Note 5: Only applies to the LTC1693-1 and LTC1693-2.
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TYPICAL PERFOR A CE CHARACTERISTICS
IN Threshold Voltage
vs Temperature
2.75
3.00
2.50
INPUT THRESHOLD VOLTAGE (V)
INPUT THRESHOLD VOLTAGE (V)
TA = 25°C
VIH
2.25
2.00
1.75
1.50
VIL
1.25
1.00
5
6
7
9
8
VCC (V)
10
11
12
1693 G01
IN Threshold Hysteresis
vs Temperature
1.4
VCC = 12V
INPUT THRESHOLD HYSTERESIS (V)
IN Threshold Voltage vs VCC
2.75
VIH
2.50
2.25
2.00
1.75
1.50
VIL
1.25
1.00
– 50 –25
75
50
25
TEMPERATURE (°C)
0
100
125
1693 G02
VCC = 12V
1.3
1.2
VIH-VIL
1.1
1.0
0.9
0.8
– 50
– 25
0
50
25
75
TEMPERATURE (°C)
100
125
1693 G03
3
LTC1693
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TYPICAL PERFOR A CE CHARACTERISTICS
PHASE Threshold Voltage vs VCC
Rise/Fall Time vs VCC
24
TA = 25°C
5
VPH(H)
Rise/Fall Time vs Temperature
3
2
tRISE
17
tRISE
18
tFALL
16
tFALL
16
15
14
13
14
12
1
12
0
10
5
6
7
9
8
VCC (V)
10
11
12
11
5
6
7
9
8
VCC (V)
10
11
1693 G04
10
–50 –25
12
Rise/Fall Time vs COUT
TA = 25°C
VCC = 12V
100 fIN = 100kHz
45
TIME (ns)
40
40
45
40
tPHL
35
30
25
1000
5
6
7
8
9
VCC (V)
10
1693 G07
200
OUTPUT SATURATION VOLTAGE (mV)
40
TIME (ns)
12
tPLH
tPHL
50
25
75
0
TEMPERATURE (°C)
100
125
1693 G09
Output Saturation Voltage
vs Temperature
TA = 25°C
VCC = 12V
fIN = 100kHz
30
11
1693 G08
Propagation Delay vs COUT
50
20
– 50 – 25
10
10000
Quiescent Current
vs VCC (Single Driver)
350
VCC = 12V
TA = 25°C
VIN = 0V
VOH (50mA) wrt VCC
QUIESCENT CURRENT (µA)
100
COUT (pF)
30
15
0
10
tPHL
25
tFALL
1
tPLH
35
20
tRISE
20
VCC = 12V
COUT = 1nF
fIN = 100kHz
tPLH
TIME (ns)
80
125
Propagation Delay vs Temperature
50
TA = 25°C
COUT = 1nF
fIN = 100kHz
50
100
1693 G06
Propagation Delay vs VCC
55
60
50
25
0
75
TEMPERATURE (°C)
1693 G05
120
TIME (ns)
18
TIME (ns)
VPH(L)
VCC = 12V
COUT = 1nF
fIN = 100kHz
19
20
4
150
VOL (50mA)
100
50
VOH (10mA) wrt VCC
300
250
200
150
VOL (10mA)
20
1
10
100
COUT (pF)
1000
10000
1693 G10
4
20
TA = 25°C
COUT = 1nF
fIN = 100kHz
22
TIME (ns)
PHASE THRESHOLD VOLTAGE (V)
6
0
– 55 – 35 –15
100
5 25 45 65 85 105 125
TEMPERATURE (°C)
1693 G11
5
6
7
9
8
VCC (V)
10
11
12
1693 G12
LTC1693
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TYPICAL PERFOR A CE CHARACTERISTICS
Switching Supply Current
vs COUT (Single Driver)
VOL vs Output Current
300
TA = 25°C
VCC = 12V
90
VCC = 12V
TA = 25°C
250
80
70
200
60
VOL (mV)
SWITCHING SUPPLY CURRENT (mA)
100
50
40
30
750kHz
20
10
200kHz
100kHz
25kHz
VOL
150
100
50
500kHz
0
0
1
10
100
COUT (pF)
1000
10000
0
10 20 30 40 50 60 70 80 90 100
OUTPUT CURRENT (mA)
1693 G13
1693 G14
VOH vs Output Current
300
Thermal Derating Curves
1400
TA = 25°C
VCC = 12V
TJ = 125°C
1200
POWER DISSIPATION (mW)
350
VOH (mV)
250
VOH
200
150
100
50
1000
LTC1693-1/LTC1693-2
800
600
LTC1693-3
400
200
0
0 10 20 30 40 50 60 70 80 90 100
OUTPUT CURRENT (mA)
1693 G15
0
– 55 – 35 –15 5 25 45 65 85 105 125
AMBIENT TEMPERATURE (°C)
1693 G16
5
LTC1693
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PIN FUNCTIONS
SO-8 Package (LTC1693-1, LTC1693-2)
MSOP Package (LTC1693-3)
IN1, IN2 (Pins 1, 3): Driver Inputs. The inputs have VCC
independent thresholds with 1.2V typical hysteresis to
improve noise immunity.
IN (Pin 1): Driver Input. The input has VCC independent
thresholds with hysteresis to improve noise immunity.
GND1, GND2 (Pins 2, 4): Driver Grounds. Connect to a
low impedance ground. The VCC bypass capacitor should
connect directly to this pin. The source of the external
MOSFET should also connect directly to the ground pin.
This minimizes the AC current path and improves signal
integrity. The ground pins should not be tied together if
isolation is required between the two drivers of the
LTC1693-1 and the LTC1693-2.
PHASE (Pin 3): Output Polarity Select. Connect this pin to
VCC or leave it floating for noninverting operation. Ground
this pin for inverting operation. The typical PHASE pin
input current when pulled low is 20µA.
OUT 1, OUT2 (Pins 5, 7): Driver Outputs. The LTC16931’s outputs are in phase with their respective inputs (IN1,
IN2). The LTC1693-2’s topside driver output (OUT1) is in
phase with its input (IN1) and the bottom side driver’s
output (OUT2) is opposite in phase with respect to its input
pin (IN2).
NC (Pins 2, 5, 6): No Connect.
GND (Pin 4): Driver Ground. Connect to a low impedance
ground. The VCC bypass capacitor should connect directly
to this pin. The source of the external MOSFET should also
connect directly to the ground pin. This minimizes the AC
current path and improves signal integrity.
OUT (Pin 7): Driver Output.
VCC (Pin 8): Power Supply Input.
VCC1, VCC2 (Pins 6, 8): Power Supply Inputs.
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BLOCK DIAGRA SM
8
IN1
GND1
IN2
GND2
1
7
2
6
3
4
5
IN1
GND1
VCC2
OUT2
LTC1693-1
DUAL NONINVERTING DRIVER
6
8
VCC1
OUT1
IN2
GND2
1
7
2
6
3
4
5
8
VCC1
OUT1
IN
GND
VCC2
OUT2
LTC1693-2
TOPSIDE NONINVERTING DRIVER
AND BOTTOM SIDE INVERTING DRIVER
PHASE
NC
1
7
4
3
6
2
5
LTC1693-3
SINGLE DRIVER WITH
POLARITY SELECT
VCC
OUT
NC
NC
1693 BD
LTC1693
TEST CIRCUITS
1/2 LTC1693-1 OR 1/2 LTC1693-2
87V
VCC1
4.7µF
12VP-P
0.1µF
1
4.7nF
IN1
OUT1
8
7
75V
A
1/2 LTC1693-1 OR 1/2 LTC1693-2
2
GND1
VCC2
12V
4.7µF
+
–
0.1µF
75V
3
IN2
OUT2
6
5
4.7nF
4
1693 TC03
GND2
1693 TC02
75V High Side Switching Test
LTC1693-1, LTC1693-2 Ground Isolation Test
VCC = 12V
4.7µF
0.1µF
IN
OUT
5V
1nF OR 4.7nF
tRISE/FALL < 10ns
1693 TC01
AC Parameter Measurements
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TI I G DIAGRA
INPUT RISE/FALL TIME < 10ns
INPUT
VIH
VIL
NONINVERTING
OUTPUT
90%
10%
tr
tPLH
INVERTING
OUTPUT
tf
tPHL
90%
10%
tf
tPHL
tr
tPLH
1693 TD
7
LTC1693
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APPLICATIONS INFORMATION
Overview
The LTC1693 single and dual drivers allow 3V- or 5V-based
digital circuits to drive power MOSFETs at high speeds. A
power MOSFET’s gate-charge loss increases with switching frequency and transition time. The LTC1693 is capable
of driving a 1nF load with a 16ns rise and fall time using a
VCC of 12V. This eliminates the need for higher voltage
supplies, such as 18V, to reduce the gate charge losses.
The LTC1693’s 360µA quiescent current is an order of
magnitude lower than most other drivers/buffers. This
improves system efficiency in both standby and switching
operation. Since a power MOSFET generally accounts for
the majority of power loss in a converter, addition of the
LT1693 to a high power converter design greatly improves
efficiency, using very little board space.
The LTC1693-1 and LTC1693-2 are dual drivers that are
electrically isolated. Each driver has independent operation from the other. Drivers may be used in different parts
of a system, such as a circuit requiring a floating driver and
the second driver being powered with respect to ground.
Input Stage
The LTC1693 employs 3V CMOS compatible input thresholds that allow a low voltage digital signal to drive standard
power MOSFETs. The LTC1693 incorporates a 4V internal
regulator to bias the input buffer. This allows the 3V CMOS
compatible input thresholds (VIH = 2.6V, VIL = 1.4V) to be
independent of variations in VCC. The 1.2V hysteresis
between VIH and VIL eliminates false triggering due to
ground noise during switching transitions. The LTC1693’s
input buffer has a high input impedance and draws less
than 10µA during standby.
Output Stage
The LTC1693’s output stage is essentially a CMOS inverter, as shown by the P- and N-channel MOSFETs in
Figure 1 (P1 and N1). The CMOS inverter swings rail-torail, giving maximum voltage drive to the load. This large
voltage swing is important in driving external power
MOSFETs, whose RDS(ON) is inversely proportional to its
gate overdrive voltage (VGS – VT).
8
V+
VCC
LEQ
(LOAD INDUCTOR
OR STRAY LEAD
INDUCTANCE)
VDRAIN
LTC1693
P1
CGD
OUT
POWER
MOSFET
N1
CGS
GND
1693 F01
Figure 1. Capacitance Seen by OUT During Switching
The LTC1693’s output peak currents are 1.4A (P1) and
1.7A (N1) respectively. The N-channel MOSFET (N1) has
higher current drive capability so it can discharge the
power MOSFET’s gate capacitance during high-to-low
signal transitions. When the power MOSFET’s gate is
pulled low by the LTC1693, its drain voltage is pulled high
by its load (e.g., a resistor or inductor). The slew rate of the
drain voltage causes current to flow back to the MOSFETs
gate through its gate-to-drain capacitance. If the MOSFET
driver does not have sufficient sink current capability (low
output impedance), the current through the power
MOSFET’s Miller capacitance (CGD) can momentarily pull
the gate high, turning the MOSFET back on.
Rise/Fall Time
Since the power MOSFET generally accounts for the majority of power lost in a converter, it’s important to quickly
turn it either fully “on” or “off” thereby minimizing the transition time in its linear region. The LTC1693 has rise and
fall times on the order of 16ns, delivering about 1.4A to 1.7A
of peak current to a 1nF load with a VCC of only 12V.
The LTC1693’s rise and fall times are determined by the
peak current capabilities of P1 and N1. The predriver,
shown in Figure 1 driving P1 and N1, uses an adaptive
method to minimize cross-conduction currents. This is
done with a 6ns nonoverlapping transition time. N1 is fully
turned off before P1 is turned-on and vice-versa using this
6ns buffer time. This minimizes any cross-conduction
currents while N1 and P1 are switching on and off yet is
short enough to not prolong their rise and fall times.
LTC1693
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APPLICATIONS INFORMATION
Driver Electrical Isolation
The LTC1693-1 and LTC1693-2 incorporate two individual
drivers in a single package that can be separately connected
to GND and VCC connections. Figure 2 shows a circuit with
an LTC1693-2, its top driver left floating while the bottom
Power Dissipation
VIN
LTC1693-2
VCC1
IN1
OUT1
driver is powered with respect to ground. Similarly Figure
3 shows a simplified circuit of a LTC1693-1 which is driving MOSFETs with different ground potentials. Because
there is 1GΩ of isolation between these drivers in a single
package, ground current on the secondary side will not
recirculate to the primary side of the circuit.
To ensure proper operation and long term reliability, the
LTC1693 must not operate beyond its maximum temperature rating. Package junction temperature can be calculated by:
N1
GND1
TJ = TA + PD(θJA)
•
where:
VCC2
IN2
V+
OUT2
N2
GND2
1693 F02
Figure 2. Simplified LTC1693-2 Floating Driver Application
TJ = Junction Temperature
TA = Ambient Temperature
PD = Power Dissipation
θJA = Junction-to-Ambient Thermal Resistance
Power dissipation consists of standby and switching
power losses:
PD = PSTDBY + PAC
where:
OTHER
PRIMARY-SIDE
CIRCUITS
OTHER
SECONDARY-SIDE
CIRCUITS
•
•
The LTC1693 consumes very little current during standby.
This DC power loss per driver at VCC = 12V is only
(360µA)(12V) = 4.32mW.
LTC1693-1
VCC1
IN1
V+
OUT1
AC switching losses are made up of the output capacitive
load losses and the transition state losses. The capactive
load losses are primarily due to the large AC currents
needed to charge and discharge the load capacitance
during switching. Load losses for the CMOS driver driving
a pure capacitive load COUT will be:
GND1
VCC2
IN2
PSTDBY = Standby Power Losses
PAC = AC Switching Losses
V+
OUT2
Load Capacitive Power (COUT) = (COUT)(f)(VCC)2
GND2
1693 F03
Figure 3. Simplified LTC1693-1 Application
with Different Ground Potentials
The power MOSFET’s gate capacitance seen by the driver
output varies with its VGS voltage level during switching.
A power MOSFET’s capacitive load power dissipation can
be calculated by its gate charge factor, QG. The QG value
9
LTC1693
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APPLICATIONS INFORMATION
corresponding to MOSFET’s VGS value (VCC in this case)
can be readily obtained from the manafacturer’s QGS vs
VGS curves:
VCC
LTC1693
Load Capacitive Power (MOS) = (VCC)(QG)(f)
Transition state power losses are due to both AC currents
required to charge and discharge the drivers’ internal
nodal capacitances and cross-conduction currents in the
internal gates.
INPUT SIGNAL
GOING BEL0W
GND PIN
POTENTIAL
R1
D1
IN
PARASITIC
SUBSTRATE
DIODE
1693 F04
UVLO and Thermal Shutdown
The LTC1693’s UVLO detector disables the input buffer
and pulls the output pin to ground if VCC < 4V. The output
remains off from VCC = 1V to VCC = 4V. This ensures that
during start-up or improper supply voltage values, the
LTC1693 will keep the output power MOSFET off.
The LTC1693 also has a thermal detector that similarly
disables the input buffer and grounds the output pin if
junction temperature exceeds 145°C. The thermal shutdown circuit has 20°C of hysteresis. This thermal limit
helps to shut down the system should a fault condition
occur.
Input Voltage Range
LTC1693’s input pin is a high impedance node and essentially draws neligible input current. This simplifies the
input drive circuitry required for the input.
The LTC1693 typically has 1.2V of hysteresis between its
low and high input thresholds. This increases the driver’s
robustness against any ground bounce noises. However,
care should still be taken to keep this pin from any noise
pickup, especially in high frequency switching
applications.
In applications where the input signal swings below the
GND pin potential, the input pin voltage must be clamped
to prevent the LTC1693’s parastic substrate diode from
turning on. This can be accomplished by connecting a
series current limiting resistor R1 and a shunting Schottky
diode D1 to the input pin (Figure 4). R1 ranges from 100Ω
to 470Ω while D1 can be a BAT54 or 1N5818/9.
GND
Figure 4
Bypassing and Grounding
LTC1693 requires proper VCC bypassing and grounding due
to its high speed switching (ns) and large AC currents (A).
Careless component placement and PCB trace routing may
cause excessive ringing and under/overshoot.
To obtain the optimum performance from the LTC1693:
A. Mount the bypass capacitors as close as possible to the
VCC and GND pins. The leads should be shortened as
much as possible to reduce lead inductance. It is
recommended to have a 0.1µF ceramic in parallel with
a low ESR 4.7µF bypass capacitor.
For high voltage switching in an inductive environment,
ensure that the bypass capacitors’ VMAX ratings are
high enough to prevent breakdown. This is especially
important for floating driver applications.
B. Use a low inductance, low impedance ground plane to
reduce any ground drop and stray capacitance. Remember that the LTC1693 switches 1.5A peak currents
and any significant ground drop will degrade signal
integrity.
C. Plan the ground routing carefully. Know where the large
load switching current is coming from and going to.
Maintain separate ground return paths for the input pin
and output pin. Terminate these two ground traces only
at the GND pin of the driver (STAR network).
D. Keep the copper trace between the driver output pin and
the load short and wide.
10
GND
VIN
5V
+
+
C7
0.1µF
25V
+V1
CIN2
330µF
6.3V
C12
1nF
5%
C4
0.1µF
C11
120pF
5%
NPO
R4
43k
CIN1
330µF
6.3V
4
3
2
1
8
7
6
5
4
3
2
1
SGND
VIN
VFB
SENSE +
C1
100pF
VCC2
OUT2
GND2
GND1
IN2
VCC1
OUT1
IN1
R1
10k
U1
LTC1693-2
SENSE –
ITH
SHDN
LBIN
BINH
CT
LBOUT
PGND
BDRIVE
PINV
PWR VIN
TDRIVE
U2
LTC1266A
5
6
7
8
9
10
11
12
13
14
15
16
C3
0.1µF
C5
1nF
R2
100Ω
D3
MMSD4148
+ VIN
D2
MMSD4148
R5
100Ω
R3
0.010Ω
5
10
C2
0.33µF
Q1
IRL2505
RX1
24Ω
1/2W
C6
1nF
50V
C8
0.1µF
16V
2
•
3
T1A
9.2µH
9T 4× #26
•8
T1D
33T #30
9
6
T1C
33T #30
+
7
•6
D5
MUR120
T1B
123µH
33T #30
•
•
1
+
CA1
220µF
35V
7
4
3
2
CB2
120µF
63V
Q3
MTD2N20
U3
LT1006S8
8
RF1
2.49k
1%
CB1
120µF
63V
+
+
T1E
NOT
USED
D4
MBR1100
–
4
R6
1.2k
RF2
47.5k
1%
R7
1k
5%
C9
10nF
50V
1
8
7
U4
LT1006S8
R10
32k
1%
– 24V
6
CA2
220µF
35V
C10
0.1µF
50V
+
3
2
C12
0.1µF
X7R
•
R8
10k
1%
L1
100µH
+
C13
10nF
100V
R9
4.99k
CA3
220µF
35V
CB3
39µF
100V
RF4
46.4k
0.1%
RF3
24.3k
0.1%
T1: PHILIPS EFD25-3C85
FIRST WIND T1B, T1C AND T1D TRIFILAR
SECOND WIND T1A QUADFILAR
AIR GAP: 0.88mm OR 2 × 0.44mm SPACERS
4
+
1
D6
12V
500mW
+
–
SLIC Power Supply
1693 TA03
– 70V
200mA
C11
0.1µF
100V
– 24V
240mA
GND
LTC1693
TYPICAL APPLICATIONS
11
U
LTC1693
U
TYPICAL APPLICATIONS
Negative-to-Positive Synchronous Boost Converter
+
D2
MBRO530
VS
L2**
1µH
VOUT
3.3V
6A
C3
330µF
6.3V
×2
+
+
C1
330µF
6.3V
×5
C2
330µF
6.3V
×5
R1
0.015Ω
1W
C12
4700pF
L1*
4.8µH
R2
0.015Ω
1W
Q2
Si4420
×2
5
C14
10µF
16V
3
D4
MBRO530
D3
MBRO530
D5
MBRO530
7
R19
1k
C17
100pF
9
+
1
U2A
LTC1693-2 2
C16
10µF
16V
C15
0.1µF
2
3
+
C6
10µF
16V
4
5
6
C5
0.1µF
8
SENSE – SENSE –
TDRV
PWR VIN
BDRV
PINV
U1
LTC1266
BINH
VIN
SHDN
CT
C7
390pF
C9
0.015µF
C8
1500pF
LBI
LBO
ITH
R17
6.81k
1
16
13
3.3V
R8
30.1k
R10
100k
R18
6.81k
R11
100k
Q5
2N3906
Q4
2N3906
11
14
R7
1k
12
15
VS
Q3
2N7002
SGND PGND VFB
7
*PANASONIC ETQPAF4R8HA
**COILCRAFT DO3316P-102
10
C10
220pF
R9
13k
R12
4.75k
R16
3.6k
Q6
2N3904
C4
1000pF
R6
10Ω
R13
1.30k
1693 TA03
12
+
U2B
LTC1693-2 4
8
Q1
Si4420
×2
R4
2.2Ω
C13
0.1µF
6
C11
4700pF
R3
100Ω
VIN
–5V
D1
MBRS130
R5
2.2Ω
R14
51Ω
R15
1.2k
+
R4
390Ω
C6
100pF
NPO
RCL
6.8k
4
3
2
1
WINDING # TURNS AWG
28
T1A
3
28
T1B
1
28
T1C
2
28
3
T1D
28
9
T1E
28
32
T1F
T1 TRANSFORMER
COILTRONICS VP4-TYPE
D10
1N4148
CC2
100pF
5%
C2
0.1µF
GND2
5
6
7
8
+ V1
C5
1nF
R11
12.1k
R5
100Ω
T1 WINDING ORDER:
1. T1A, T1B, T1C, T1D QUAD-FILAR, WOUND FIRST,
AFTER T1A, T1B, T1C AND T1D WOUND, REMOVE
2 TURNS FROM T1B AND 1 TURN FROM T1C
2. T1E WOUND ON TOP, SPREAD EVENLY
3. LAYER OF INSULATION
4. T1F WOUND ON TOP, SPREAD EVENLY
VCC2
OUT2
IN2
OUT1
VCC1
U1
LTC1693-1
GND1
IN1
10
9
SENSE +
VFB
SHDN
11
12
13
14
15
16
RX1
120Ω
1/2W
CX1
220pF
50V
8
5
T1E
9T
#28
4 T1D
3T
#28
9
C4
1nF
50V
DO4
MBRM140
1693 TA04
C11
0.1µF
100V
+
R7
4.7Ω
CO4
220µF
25V
+
D9
5.6V
0.5W
R6
10Ω
CO2A
330µF
6.3V
5V
+
+
CO4B
0.1µF
16V
+
CO2B
330µF
6.3V
CO1A
330µF
6.3V
LO1
1µH
Q3
2N2222
CO3A
330µF
6.3V
C9
1nF
R8
1k
+
LO3
2.2µH
LO2
2.2µH
D6
3.3V 500mW
D7
BAV21
RF1
42.2k
1%
Q1
2N5401
QO2
Si9803
D8
BAV21
R9
1M
DO3
MBRM140
QO1
Si9803
R2
22Ω
T1 CORE:
COILTRONICS VP4-TYPE, AIR GAP, 0.7mm or 2 × 0.35mm SPACERS
PRIMARY INDUCTANCE OF T1F = 50µH
ALTERNATIVE CORES:
SIEMENS EFD20, N67 MATERIAL, TDK PC40-EPC17
R3
0.1Ω
Q2
IRF620
T1B
1T
#28
3 T1C
2T
#28
10
11
•
CC1
10nF
SENSE –
ITH
CT
SGND
LBIN
BINH
VIN
LBOUT
PGND
BDRIVE
PINV
PWR VIN
TDRIVE
T1F 7
32T
#28
50µH 6
•
8
7
6
5
4
3
2
1
U2
LTC1266A
2
T1A
3T
12 #28
1
•
C11
120pF
5% NPO
C7
0.1µF
25V
CIN2
220µF
50V
D2
MMSD4148
•
+ V1
CIN1
220µF
50V
+
C1
220µF
16V
D3
MMSD4148
•
– VIN
–24V TO – 35V
GND
+
+ V1
•
R1
47k
D1
6.2V
500mW
Q4
FZT694B
C3
0.1µF
100V
Multiple Output Telecom Power Supply
+
CO3B
330µF
6.3V
CO1B
330µF
6.3V
– 5V
30mA
2.5V
0.3A
3.3V
0.3A
5V
0.8A
LTC1693
TYPICAL APPLICATIONS
13
U
C1
1.2µF
100V
CER
68µF
20V
AVX
TSPE
10k
P
+
100k
0.1µF
P
3.9k
GND1
IN1
20
PHASE
JP3
W2
T1
2
W3
2
7
5
6
18
1
RUN/SHDN
12VIN
2.2µF
19
OUT1
VCC1
470Ω
OUT2
IN2
VCC2
LTC1693-1
GND2
JP2
100k
14
13
17
1
8
3
4
12V
5VOUT SHORT JP3, OPEN JP2
3.3VOUT, SHORT JP2, OPEN JP3
BAS21
BAS21
BAS21
13k
MMBD914LT1
C2
1.2µF
100V
CER
COILCRAFT
DO1608-105
36k
+VIN
–VIN
INPUT
36V TO
75V
+VIN
+VIN
BAT54
2.2µF
10Ω
5
10
P
W4, 7T 6 x 26AWG
W5, 10T 2 x 26AWG
W1, 10T 32AWG,
W2, 15T 32AWG
W1, 10T 2 x 26AWG
T2
T2
T1
8 15
W4
W4
4.7nF
7
VFB
BG
4.7k
4.7k
9
2MIL
POLY
FILM
2MIL
POLY
FILM
2.4k
1µF
BAT54
+
OUT1
IN1
T2
P
2
7
5
6
85
90
95
100k
+
C5
330µF
6.3V
0
1
1
5
2
REF
6
8
48VIN
72VIN
8
9
10
4.42k
1%
–VOUT
9.31k
1%
BAS21
10Ω
SEC HV
1693 TA10
SHORT JP1
FOR 5VOUT
0.01µF
1k
0.47µF
50V
3.01k
1%
+VOUT
MMFT3904
7
LT1431CS8
36VIN
–VOUT
OUTPUT
5V/10A
+VOUT
2k
3.1V
3 4 5 6 7
OUTPUT CURRENT
COLL
4
2
0.22µF
1µF
4.7µF
25V
1k
–VOUT
FZT600
+
+VOUT
3
C3, C4, C5:
SANYO OS-CON
C4
330µF
6.3V
470Ω
GND1
OUT2
IN2
GND2
VCC2
LTC1693-1
VCC1
CNY17-3
4
1
3
8
SUD30N04-10
W1
470Ω
BAT54
1nF
C3
330µF
6.3V
4.8µH
PANASONIC ETQP AF4R8H
10Ω
470Ω
16 3.3Ω
T1 PHILIPS EFD20-3F3 CORE
LP = 720µH (AI = 1800)
T2 ER11/5 CORE
AI = 960µH
6
10Ω
SEC HV
SUD30N04-10
1nF
4.7nF
4.7nF
W3
LT1339
W5
W1
0.1µF
W3, 10T 32AWG,
W4, 10T 32AWG
2.2nF
2.2nF
4
12
0.025Ω
1/2W
W1, 18T BIFILAR 31AWG
W3, 6T BIFILAR 31AWG
1µF
4.53k
3
11
10Ω
P
IRF1310NS
MURS120
FMMT718
FMMT718
TS
470Ω
SENSE +
CT
W2
SL/ADJ
T2
SGND
47Ω
PGND
MMBD914LT1
TG
SYNC
SENSE –
IAVG
VBOOST
5VREF
MURS120
VREF
IRF1310NS
SS
10Ω
VC
0.1µF
V+
GND-F
+VIN
EFFICIENCY
RTOP
COMP
GND-S
14
RMID
48V to 5V Isolated Synchronous Forward DC/DC Converter
LTC1693
TYPICAL APPLICATIONS
U
LTC1693
U
TYPICAL APPLICATIONS
5V to 12V Boost Converter
R2
13k
1%
D1
BAT85
R1
7.5k
1%
+
C2
0.1µF
C3
4.7µF
VCC = 5V
L1*
D2
22µH 1N5819
VOUT
12V
50mA
8
1
7
LTC1693-3
3
C1
680pF
Q1
BS170
+
CL
47µF
4
1693 TA06a
INDUCTOR PEAK CURRENT ≈ 600mA
R2, C1 SET THE OSCILLATION FREQUENCY AT 200kHz
R1 SETS THE DUTY CYCLE AT 45%
EFFICIENCY ≈ 80% AT 50mA LOAD
*SUMIDA CDRH125-220
Efficiency
Output Voltage
18
100
VCC = 5V
50mA LOAD
VCC = 5V
50mA LOAD
90
14
EFFICIENCY (%)
OUTPUT VOLTAGE (V)
16
12
10
70
60
8
6
80
35
40
45
50
55
DUTY CYCLE (%)
60
65
1693 TA06b
50
10
11
12
13
14
OUTPUT VOLTAGE (V)
15
16
1693 TA06c
15
LTC1693
U
TYPICAL APPLICATIONS
Charge Pump Doubler
R1
11k
1%
VCC = 5V
VCC = 5V
C2
1µF
C3
1µF
8
1
C1
680pF
D1
1N5817
D2
1N5817
7
LTC1693-3
VOUT
+
3
CL
47µF
4
1693 TA07a
R1, C1 SET THE OSCILLATION FREQUENCY AT 150kHz
AND THE DUTY CYCLE AT 35%
Efficiency
Output Voltage
100
12
VCC = 5V
VCC = 5V
80
8
EFFICIENCY (%)
OUTPUT VOLTAGE (V)
10
6
4
40
20
2
0
0
0
10 20 30 40 50 60 70 80 90 100
OUTPUT CURRENT (mA)
1693 TA07b
16
60
0
10 20 30 40 50 60 70 80 90 100
OUTPUT CURRENT (mA)
1693 TA07c
LTC1693
U
TYPICAL APPLICATIONS
Charge Pump Inverter
R1
11k
1%
VCC = 5V
C2
1µF
C3
1µF
8
C1
680pF
7
LTC1693-3
3
4
+
1
D2
1N5817
D1
1N5817
CL
47µF
VOUT
1693 TA08a
R1, C1 SET THE OSCILLATION FREQUENCY AT 150kHz
AND THE DUTY CYCLE AT 35%
Efficiency
Output Voltage
0
100
VCC = 5V
VCC = 5V
80
–2
EFFICIENCY (%)
OUTPUT VOLTAGE (V)
–1
–3
–4
60
40
20
–5
–6
0
10 20 30 40 50 60 70 80 90 100
OUTPUT CURRENT (mA)
1693 TA08b
0
0
10 20 30 40 50 60 70 80 90 100
OUTPUT CURRENT (mA)
1693 TA08c
17
LTC1693
U
TYPICAL APPLICATIONS
Charge Pump Tripler
R1
11k
1%
VCC = 5V
VCC = 5V
C2
1µF
C3
1µF
8
1
C1
680pF
D3
1N5817
D4
1N5817
7
LTC1693-3
3
4
D1
1N5817
D2
1N5817
C5
1µF
+
+
C4
3.3µF
VOUT
CL
47µF
1693 TA09a
R1, C1 SET THE OSCILLATION FREQUENCY AT 150kHz
AND THE DUTY CYCLE AT 35%
Efficiency
Output Voltage
90
16
80
14
70
12
60
10
8
6
50
40
30
4
20
2
10
0
0
0
10 20 30 40 50 60 70 80 90 100
OUTPUT CURRENT (mA)
1693 TA09b
18
VCC = 5V
VCC = 5V
EFFICIENCY (%)
OUTPUT VOLTAGE (V)
18
0
10 20 30 40 50 60 70 80 90 100
OUTPUT CURRENT (mA)
1693 TA09c
LTC1693
U
PACKAGE DESCRIPTION
Dimensions in inches (millimeters) unless otherwise noted.
MS8 Package
8-Lead Plastic MSOP
(LTC DWG # 05-08-1660)
0.118 ± 0.004*
(3.00 ± 0.102)
8
7 6
5
0.118 ± 0.004**
(3.00 ± 0.102)
0.192 ± 0.004
(4.88 ± 0.10)
1
2 3
4
0.040 ± 0.006
(1.02 ± 0.15)
0.007
(0.18)
0.034 ± 0.004
(0.86 ± 0.102)
0° – 6° TYP
SEATING
PLANE 0.012
(0.30)
0.0256
REF
(0.65)
TYP
0.021 ± 0.006
(0.53 ± 0.015)
0.006 ± 0.004
(0.15 ± 0.102)
MSOP (MS8) 1197
* DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
** DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS.
INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
S8 Package
8-Lead Plastic Small Outline (Narrow 0.150)
(LTC DWG # 05-08-1610)
0.189 – 0.197*
(4.801 – 5.004)
8
7
6
5
0.150 – 0.157**
(3.810 – 3.988)
0.228 – 0.244
(5.791 – 6.197)
1
0.010 – 0.020
× 45°
(0.254 – 0.508)
0.008 – 0.010
(0.203 – 0.254)
0.053 – 0.069
(1.346 – 1.752)
0°– 8° TYP
0.016 – 0.050
0.406 – 1.270
0.014 – 0.019
(0.355 – 0.483)
2
3
4
0.004 – 0.010
(0.101 – 0.254)
0.050
(1.270)
TYP
*DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
**DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD
FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
SO8 0996
19
LTC1693
U
TYPICAL APPLICATION
Isolated Push-Pull DC/DC Converter
R1
6.2k
C3
0.1µF
C4
1µF
C2
0.1µF
74HC14
+
T1B 1
10 14
12
11
12
7
PRESET
D
LTC1693-2
7
Q1
Si4410
Q
Q
2
8
GND
6
3
7
LTC1693-2
5
R2
10Ω
Q2
Si4410
2
•
T1D
24T
#32
• 9 T1E
24T
8 #28
•
T1C 3
24T
#32 4
C5
2.2nF
100V
×2
9
1•
24T
#32 2
13
CLR
74HC74
C6
330µF
6.3V
8
1
14
C1
390pF
T1A
24T
#32
VCC = 5V
VCC = 5V
13
VCC = 5V
C7
2.2nF
100V
R3
10Ω
D1
MBR340
L1
1µH
+
• 9 T1F
24T
8 #28
D2
MBR340
C9
270µF
25V
×3
VOUT
12V
1A
3•
4
R4
10Ω
C8
2.2nF
100V
T1: PHILIPS CPHS-EFD20-1S-10P
FIRST WIND T1A AND T1C BIFILAR,
THEN WIND T1E AND T1F BIFILAR,
THEN WIND T1B AND T1D BIFILAR
4
1693 F05a
Efficiency
Output Voltage
14
100
VCC = 5V
VCC = 5V
90
80
10
EFFICIENCY (%)
OUTPUT VOLTAGE (V)
12
8
6
4
70
60
50
40
2
30
20
0
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
OUTPUT CURRENT (A)
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
OUTPUT CURRENT (A)
1693 F05c
1693 F05b
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
LTC1154
High Side Micropower MOSFET Drivers
Internal Charge Pump, 4.5V to 48V Supply Range, tON = 80µs, tOFF = 28µs
LTC1155
Dual Micropower High/Low Side Drivers with
Internal Charge Pump
4.5V to 18V Supply Range
LTC1156
Dual Micropower High/Low Side Drivers with
Internal Charge Pump
4.5V to 18V Supply Range
LTC1157
3.3V Dual Micropower High/Low Side Driver
3.3V or 5V Supply Range
LT®1160/LT1162
Half/Full Bridge N-Channel Power MOSFET Driver
Dual Driver with Topside Floating Driver, 10V to 15V Supply Range
LT1161
Quad Protected High Side MOSFET Driver
8V to 48V Supply Range, tON = 200µs, tOFF = 28µs
LTC1163
Triple 1.8V to 6V High Side MOSFET Driver
1.8V to 6V Supply Range, tON = 95µs, tOFF = 45µs
LT1339
High Power Synchronous DC/DC Controller
Current Mode Operation Up to 60V, Dual N-Channel Synchronous Drive
LTC1435
High Efficiency, Low Noise Current Mode
Step-Down DC/DC Controller
3.5V to 36V Operation with Ultrahigh Efficiency, Dual N-Channel MOSFET
Synchronous Drive
20
Linear Technology Corporation
1693fa LT/TP 1000 2K REV A • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408)432-1900 ● FAX: (408) 434-0507 ● www.linear-tech.com
 LINEAR TECHNOLOGY CORPORATION 1999