DS2102SY DS2102SY Rectifier Diode Replaces September 2001 version, DS4171-5.0 DS4171-5.1 December 2001 FEATURES KEY PARAMETERS ■ Double Side Cooling VRRM 2000V ■ High Surge Capability IF(AV) 6654A IFSM APPLICATIONS 100000A ■ Rectification ■ Freewheel Diode ■ DC Motor Control ■ Power Supplies ■ Welding ■ Battery Chargers VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V DS2102SY20 2000 DS2102SY19 1900 DS2102SY18 1800 DS2102SY17 1700 DS2102SY16 1600 DS2102SY15 1500 Lower voltage grades available. Conditions VRSM = VRRM + 100V Outline type code: F See Package Details for further information. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DS2102SY18 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/7 www.dynexsemi.com DS2102SY CURRENT RATINGS Tcase = 75oC unless otherwise stated Symbol Parameter Conditions Max. Units 6654 A Double Side Cooled Half wave resistive load IF(AV) Mean forward current IF(RMS) RMS value - 10452 A Continuous (direct) forward current - 9275 A 4227 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value - 6640 A Continuous (direct) forward current - 5403 A Conditions Max. Units IF Half wave resistive load Tcase = 100oC unless otherwise stated Symbol Parameter Double Side Cooled IF(AV) Mean forward current Half wave resistive load, Tcase = 100oC 5460 A IF(RMS) RMS value Tcase = 100oC 8575 A Continuous (direct) forward current Tcase = 100oC 7450 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current Half wave resistive load, Tcase = 100oC 3410 A IF(RMS) RMS value Tcase = 100oC 5356 A Continuous (direct) forward current Tcase = 100oC 4260 A IF 2/7 www.dynexsemi.com DS2102SY SURGE RATINGS Symbol IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing Surge (non-repetitive) forward current Conditions Max. Units 10ms half sine; Tcase = 175oC 80.0 kA VR = 50% VRRM - 1/4 sine 32 x 106 A2s 10ms half sine; Tcase =175oC 100.0 kA VR = 0 50 x 106 A2s I2t for fusing THERMAL AND MECHANICAL DATA Min. Max. dc - 0.0095 o Anode dc - 0.019 o Cathode dc - 0.019 o C/W Double side - 0.002 o C/W Single side - 0.004 o C/W Forward (conducting) - 200 o Reverse (blocking) - 175 o Storage temperature range -55 175 o Clamping force 38.0 47.0 Parameter Symbol Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Units C/W C/W Single side cooled Rth(c-h) Tvj Tstg - Thermal resistance - case to heatsink Clamping force 43.0kN with mounting compound C Virtual junction temperature C C kN 3/7 www.dynexsemi.com DS2102SY CHARACTERISTICS Conditions Parameter Symbol Min. Max. Units VFM Forward voltage At 3000A peak, Tcase = 25oC - 1.0 V IRM Peak reverse current At VRRM, Tcase = 175oC - 100 mA QS Total stored charge - 2600 µC Irr Peak reverse recovery current - 120 A VTO rT IF = 2000A, dIRR/dt = 3A/µs Tcase = 175˚C, VR = 100V Threshold voltage At Tvj = 175˚C - 0.75 V Slope resistance At Tvj = 175˚C - 0.0415 mΩ CURVES 10000 12000 Measured under pulse conditions 10000 Mean power dissipation - (W) Instantaneous forward current, IF - (A) 8000 6000 Tj = 175˚C 4000 8000 6000 4000 Tj = 25˚C 2000 2000 0 0.4 0.6 0.8 1.0 Instantaneous forward voltage, VF - (V) 1.2 0 0 Fig.2 Maximum (limit) forward characteristics VFM Equation:VFM = A + Bln (IF) + C.IF+D.√IF dc Half wave 3 phase 6 phase 2000 4000 6000 8000 Mean forward current, IF(AV) - (A) 10000 Fig.3 Dissipation curves Where A = 0.402091 B = 0.011718 C = 6.48 x 10–5 D = 0.005977 these values are valid for Tj = 125˚C for IF 500A to 10000A 4/7 www.dynexsemi.com DS2102SY 100000 1000 IF Conditions: Tj = 175˚C VR = 100V IF = 2000A QS Conditions: Tj = 175˚C VR = 100V IF = 2000A dIF/dt Stored charge, QS - (µC) Reverse recovery current Irr - (A) IRM 10000 1000 0.1 100 1.0 10 Rate of decay of forward current, dIF/dt - (A/µs) 10 0.1 100 Fig.4 Total stored charge 1.0 10 Rate of decay of forward current, dIF/dt - (A/µs) 100 Fig.5 Maximum reverse recovery current 160 0.1 I2t = Î2 x t 2 120 35 100 30 80 25 I2t 60 Thermal impedance - (˚C/W) Anode side cooled I2t value - (A2s x 106) Peak half sine forward current - (kA) 140 0.01 Double side cooled 0.001 20 40 1 10 ms 1 2 3 5 10 20 15 50 Cycles at 50Hz Duration Fig.6 Surge (non-repetitive) forward current vs time (with 50% VRRM at Tcase 175˚C) Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ 0.0001 0.001 0.01 0.1 1 Time - (s) Effective thermal resistance Junction to case ˚C/W Double side 0.0095 0.0105 0.0112 0.0139 10 Single side 0.019 0.020 0.0207 0.0234 100 Fig.7 Maximum (limit) transient thermal impedance junction to case 5/7 www.dynexsemi.com DS2102SY PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole Ø3.6 x 2.0 deep (One in each electrode) Cathode 37.7 36.0 Ø112.5 max Ø73 nom Ø73 nom Anode Nominal weight: 1600g Clamping force: 50kN ±10% Package outine type code: Y Note: 1. Package maybe supplied with pins and/or tags. 6/7 www.dynexsemi.com DS2102SY POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS4171-5 Issue No. 5.1 December 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. 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