FJX3007R NPN Epitaxial Silicon Transistor with Bias Resistor Features Description • 100 mA Output Current Capability • Built-in Bias Resistor (R1 = 22 kΩ, R2 = 47 kΩ) Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design. Application • Switching, Interface, and Driver Circuits • Inverters • Digital Applications in Industrial Segments Equivalent Circuit C 3 R1 B 2 R2 1 SOT-323 1. Base 2. Emitter 3. Collector E Ordering Information Part Number Top Mark Package Packing Method FJX3007RTF S07 SC70 3L (SOT-323) Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 10 V IC Collector Current 100 mA TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to 150 °C © 2002 Fairchild Semiconductor Corporation FJX3007R Rev. 1.1.2 www.fairchildsemi.com 1 FJX3007R — NPN Epitaxial Silicon Transistor with Bias Resistor November 2013 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Value Unit Power Dissipation Parameter 200 mW Derate Above TA = 25°C 1.60 mW/°C Thermal Resistance, Junction to Ambient 625 °C/W Note: 1. PCB size: FR-4 76 x 114 x 0.6T mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter BVCBO Collector-Base Breakdown Voltage BVCEO Conditions Min. IC = 10 μA, IE = 0 50 50 Typ. Max. Unit V Collector-Emitter Breakdown Voltage IC = 100 μA, IB = 0 ICBO Collector Cut-Off Current VCB = 40 V, IE = 0 hFE DC Current Gain VCE = 5 V, IC = 5 mA Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 3.7 pF Current Gain Bandwidth Product VCE = 10 V, IC = 5 mA 250 MHz VCE(sat) fT Cob VI(off) Input-Off Voltage VCE = 5 V, IC = 100 μA VI(on) Input-On Voltage VCE = 0.3 V, IC = 2 mA V 0.1 μA 0.3 V 68 0.4 2.5 V R1 Input Resistor 15 22 29 R1/R2 Resistor Ratio 0.42 0.47 0.52 © 2002 Fairchild Semiconductor Corporation FJX3007R Rev. 1.1.2 V kΩ www.fairchildsemi.com 2 FJX3007R — NPN Epitaxial Silicon Transistor with Bias Resistor Thermal Characteristics(1) 100 VCE = 5V R1 = 22K R2 = 47K VCE = 0.3V R1 = 22K R2 = 47K VI(on)[V], INPUT VOLTAGE hFE, DC CURRENT GAIN 1000 100 10 1 0.1 1 10 10 1 0.1 0.1 100 1 Figure 1. DC Current Gain Figure 2. Input-On Voltage 10k 300 VCE = 5V R1 = 22K R2 = 47K PC[mW], POWER DISSIPATION IC [μA], COLLECTOR CURRENT 100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT 1k 100 10 1 0.0 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 200 150 100 50 0 2.0 0 VI(off)[V], INPUT OFF VOLTAGE 25 50 75 100 125 150 175 o Ta[ C], AMBIENT TEMPERATURE Figure 3. Input-Off Voltage © 2002 Fairchild Semiconductor Corporation FJX3007R Rev. 1.1.2 250 Figure 4. Power Derating www.fairchildsemi.com 3 FJX3007R — NPN Epitaxial Silicon Transistor with Bias Resistor Typical Performance Characteristics FJX3007R — NPN Epitaxial Silicon Transistor with Bias Resistor Physical Dimensions SC-70 3L (SOT-323) Figure 5. 3-LEAD, SC70, EIAJ SC-70, 1.25 MM, WIDE (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MAA03A.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MAA03A_BK.pdf. © 2002 Fairchild Semiconductor Corporation FJX3007R Rev. 1.1.2 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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