Sony MCX18N00B Micro unit ccd Datasheet

MCX18N00A/MCX18N00B
Micro Unit CCD
Description
The micro unit CCD is a CCD color camera unit
with built-in CCD image sensor, drive system IC,
sample-and-hold IC, signal processor IC and lens
system.
64 pin QFN (Ceramic)
Features
• Ultra-compact size:
MCX18N00A
18.3mm × 18.3mm × 8.4mm
MCX18N00B
18.3mm × 18.3mm × 9.6mm
• Y/C analog output
• Employs a Type 1/5,
180,000-pixel color CCD image sensor
• Equipped with a fixed focus lens:
MCX18N00A
F2.8/f = 2.9mm
MCX18N00B
F2.8/f = 4.0mm
Peripheral ICs
• EVR: MB88347 (Fujitsu Limited.)
• EEPROM: AK6420 (Asahi Kasei Microsystems
Co., Ltd.)
Applications
• TV conference cameras
• Image input cameras
Absolute Maximum Ratings
• Supply voltage
VH
DVDD1, DVDD2, AVDD6
AVDD1, AVDD2, AVDD3
AVDD4, AVDD5
VCC
VL
• Input voltage
VI
• Operating temperature
Topr
• Storage temperature
Tstg
+18
+7.0
+7.0
+7.0
+14.0
–17.5
–0.5 to DVDD + 0.5
0 to +40
–30 to +80
V
V
V
V
V
V
V
°C
°C
Recommended Operating Conditions
• Supply voltage
VH
DVDD1, DVDD2, AVDD6
AVDD1, AVDD2, AVDD3
AVDD4, AVDD5
VCC
VL
• Input voltage
VDCIN
• Operating temperature
Topr
14.25 to 15.75
3.0 to 3.6
4.75 to 5.25
4.5 to 5.5
4.5 to 5.25
–8.5 to –7.5
1.0 to 4.5
0 to +40
V
V
V
V
V
V
V
°C
Block Diagram
Lens
CCD
Image
Sensor
S/H
Digital
Signal
Process
Y/C
Timing
Generator
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E97432B9X
MCX18N00A/MCX18N00B
SCK
XCLR
AVDD6
4FSCI
4FSCO
AGND
PCOMP
VD
HD
DGND
DGND
DGND
CCDOUT
VBC
VREFC
IREFC
Pin Configuration
56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41
40 SI
VGC 57
AVDD5 58
39 SO
IOC 59
38 CASI
IOY 60
37 CSROM
36 RESETTG
VGY 61
IREFY 62
35 DGND
VREFY 63
34 OSCI
33 OSCO
VBY 64
DGND
1
DGND
2
32 CK
31 DVDD1
30 XCS
DGND 3
SHOUT
4
29 CASCK
SHIN
5
28 CASO
AGND
6
27 CSEVR
AGND
7
26 DGND
SIFSEL
8
25 VL
–2–
DCOUT
SUBOUT
DCIN
AVDD3
AVDD1
AVDD2
OFFSET
AGCCONT
SUBIN
VCC
TEST
AGND
AVDD4
VH
AGND
DVDD2
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
MCX18N00A/MCX18N00B
Pin Description
Pin
No.
Symbol
I/O
Description
1
DGND
—
Digital GND
2
DGND
—
Digital GND
3
DGND
—
Digital GND
4
SHOUT
O
Sample-and-hold output. Connect directly to Pin 5.
5
SHIN
I
Sample-and-hold input.
6
AGND
—
Analog GND
7
AGND
I
Analog GND
8
SIFSEL
I
Serial communication mode selection: Microcomputer (low)/RS232C (high).
9
DVDD2
—
+3.3V power supply for signal processing system.
10
AGND
—
Analog GND
11
VH
—
+15V power supply for CCD image sensor drive.
12
AGND
—
Analog GND
13
AVDD4
—
+5V power supply for A/D converter.
14
VCC
—
+5V power supply for sample-and-hold.
15
TEST
I
Test pin. Connect to VCC.
16
SUBIN
I
CCD image sensor SUB voltage input.
17
AGCCONT
I
AGC control.
18
OFFSET
I
OFFSET control.
19
AVDD1
—
+5V power supply for sample-and-hold pulse.
20
AVDD2
—
+5V power supply for RG pulse.
21
AVDD3
—
+5V power supply for H pulse.
22
DCIN
I
DC amplifier input.
23
DCOUT
O
DC amplifier output.
24
SUBOUT
O
SUB pulse output.
25
VL
—
–8V power supply for CCD image sensor drive.
26
DGND
—
Digital GND
27
CSEVR
O
EVR chip select.
28
CASO
O
Serial communication data output for peripheral ICs (EVR, EEPROM).
29
CASCK
O
Serial communication clock output for peripheral ICs (EVR, EEPROM).
30
XCS
I
Switched by the SIFSEL setting.
Chip select during microcomputer mode.
Baud rate setting (4800bps (low)/9600bps (high)) during RS232C mode.
31
DVDD1
32
CK
I
27MHz clock input.
33
OSCO
O
27MHz oscillator output.
34
OSCI
I
27MHz oscillator input.
35
DGND
—
—
+3.3V power supply for timing generator.
Digital GND
–3–
MCX18N00A/MCX18N00B
Pin
No.
Symbol
I/O
36
RESETTG
I
Reset pin (active low) with pull-up resistor for timing generator.
37
CSROM
O
EEPROM chip select.
38
CASI
I
Serial communication data input for peripheral ICs (EVR, EEPROM).
39
SO
O
Serial communication data output.
40
SI
I
Serial communication data input.
41
SCK
I
Serial communication clock input.
42
XCLR
I
Initialization pin (active low). EEPROM re-read.
43
AVDD6
—
44
4FSCI
I
4fsc oscillator input.
45
4FSCO
O
4fsc oscillator output.
46
AGND
—
Analog GND
47
PCOMP
O
Phase comparison output for PLL lock.
48
VD
O
Vertical sync output.
49
HD
O
Horizontal sync output.
50
DGND
—
Digital GND
51
DGND
—
Digital GND
52
DGND
—
Digital GND
53
CCDOUT
O
CCD image sensor buffer output.
54
VBC
55
VREFC
56
IREFC
57
VGC
58
AVDD5
—
+5V power supply for D/A converter.
59
IOC
O
Chroma signal output.
60
IOY
O
Luminance signal output.
61
VGY
62
IREFY
63
VREFY
64
VBY
I
I
Description
+3.3V power supply for 4fsc oscillator.
D/A converter peripheral circuit connection pins for chroma signal.
D/A converter peripheral circuit connection pins for luminance signal.
–4–
MCX18N00A/MCX18N00B
Electrical Characteristics
DC Characteristics
Item
Symbol
Supply voltage
Operating
current
Conditions
Min.
Typ.
Max.
Unit
DVDD1
3.0
3.3
3.6
V
DVDD2
3.0
3.3
3.6
V
AVDD1
4.75
5.00
5.25
V
AVDD2
4.75
5.00
5.25
V
AVDD3
4.75
5.00
5.25
V
Pins
AVDD4
A/D input amplitude = 2Vp-p
4.5
5.0
5.5
V
AVDD5
D/A output amplitude = 2Vp-p
4.5
5.0
5.5
V
AVDD6
3.0
3.3
3.6
V
VCC
4.5
5.0
5.25
V
VH
14.25
15.00
15.75
V
VL
–8.5
–8.0
–7.5
V
IDD1
DVDD1 = 3.3V
7.2
mA
IDD2
DVDD2 = 3.3V
36
mA
IADD1
AVDD1 = 5.0V
3.1
mA
IADD2
AVDD2 = 5.0V
1.0
mA
IADD3
AVDD3 = 5.0V
4.9
mA
IADD4
AVDD4 = 5.0V
15
mA
IADD5
AVDD5 = 5.0V
24
mA
IADD6
AVDD6 = 3.3V
1.0
mA
ICC
VCC = 5.0V
54
mA
IH
VH = 15.0V
6.9
mA
IL
VL = –8.0V
1.4
mA
Input voltage 1
∗5, ∗7
VT+
VT–
DVDD2 × 0.8
Input voltage 2
∗1, ∗6
VIH1
VIL1
DVDD1 × 0.7
Input voltage 3
DCIN
VDCIN
1.0
Display
Display
value – 0.1 value
Input voltage 4 SUBIN VSUB
Input voltage 5 4FSCI
AVDD4 × 0.7
VIH2
VIL2
–5–
DVDD2 × 0.2
V
DVDD1 × 0.3
V
4.5
V
Display
value + 0.1
V
AVDD4 × 0.3
V
MCX18N00A/MCX18N00B
Item
Conditions
Pins
Symbol
Output voltage 1
∗2
VOH1
VOL1
IOH1 = –1.2mA
IOL1 = 2.4mA
DVDD2 – 0.8
Output voltage 2
∗3
VOH2
VOL2
IOH2 = –2.4mA
IOL2 = 4.8mA
DVDD2 – 0.8
Output voltage 3
∗4
VOH3
VOL3
IOH3 = –8mA
IOL3 = 8mA
DVDD1/2
Output voltage 4
SUBOUT
VOH4
VOL4
IOH4 = –4mA
IOL4 = 5.4mA
VH – 0.25
Output voltage 5
4FSCO
VOH5
VOL5
IOH5 = –3mA
IOL5 = 3mA
AVDD4/2
Min.
Typ.
Max.
0.4
0.4
DVDD1/2
VL + 0.25
AVDD4/2
Unit
V
V
V
V
V
Hysteresis 1
∗7
0.5
V
Hysteresis 2
∗5
0.6
V
Threshold value 1
VTH1
1.35
V
Threshold value 2
TEST
∗6
VTH2
DVDD1/2
V
Threshold value 3
4FSCI
VTH3
AVDD4/2
V
Feedback resistance 1
OSC
RFE1
OSCI = DVDD1 or GND
500k
2M
5M
Ω
Feedback resistance 2
4FSC
RFE2
4FSCI = AVDD4 or GND
250k
1M
2.5M
Ω
Input amplitude
OSC
Pull-up resistance
∗1
DC amplifier gain
Input leak current 1
Input leak current 2
∗1
∗2
∗3
∗4
∗5
∗6
∗7
50MHz sine wave
0.5
50k
RPU
G
SIFSEL II3
∗5
II2
Vp-p
100k
150k
Ω
75
µA
10
µA
4.4
VIN = DVDD2
12
VIN = GND or DVDD2
–10
RESETTG
CSEVR, CSROM, SO, PCOMP, VD, HD
CASO, CASCK
OSCO
XCS, SI, SCK, XCLR, CASI
OSCI, CK
SIFSEL
–6–
30
MCX18N00A/MCX18N00B
Note) VSUB display value
The VSUB display value is displayed by a code on the rear surface of the MUC.
—
Symbol
Actual voltage (V) 5.00
E
Symbol
Actual voltage (V) 8.50
W
Symbol
=
0
1
2
3
4
6
7
8
9
A
C
D
5.25
5.50
5.75
6.00
6.25
6.50
6.75
7.00
7.25
7.50
7.75
8.00
8.25
f
G
h
J
K
L
m
N
P
R
S
U
V
8.75
9.00
9.25
9.50
X
Y
Z
9.75 10.00 10.25 10.50 10.75 11.00 11.25 11.50 11.75
Actual voltage (V) 12.00 12.25 12.50 12.75
AC Characteristics
Classification
Item
Symbol
Min.
Typ.
Max. Unit
XCLR
Minimum low interval
TWCLR
500
—
—
ns
RESETTG
Minimum low interval
TWRST
35
—
—
ns
SCK input pulse width (high interval)
TWHSCK
430
—
—
ns
SCK input pulse width (low interval)
TWLSCK
430
—
—
ns
XCS input setup time, activated by the falling edge
of SCK
TSUXCS
430
—
—
ns
XCS input hold time, activated by the rising edge of
SCK
THXCS
640
—
—
ns
TSUSI
140
—
—
ns
THSI
140
—
—
ns
SO output transition time (Hi-Z → Data active),
activated by the falling edge of XCS
TZDSO
70
—
200
ns
SO transition time (Data active → Hi-Z),
activated by the rising edge of XCS
TDZSO
70
—
200
ns
SO output delay time, activated by the falling edge
of SCK
TPDSO
70
—
240
ns
SI input setup time, activated by the rising edge of
Serial
SCK
communication
SI input hold time, activated by the rising edge of
SCK
TSUXCS
THXCS
XCS
TWLSCK
TWHSCK
SCK
TPDSO
TDZSO
TZDSO
SO
DATA
DATA
DATA
TSUSI THSI
SI
DATA
DATA
–7–
DATA
MCX18N00A/MCX18N00B
Image Sensor Characteristics
Item
(Ta = 25°C)
Unit
Measurement
method
mV
1
Center of screen
mV
2
Ta = 60°C, center of screen
0.012
%
3
Ydt
2
mV
4
Ta = 60°C
∆Ydt
1
mV
5
Ta = 60°C
Symbol
Min.
Typ.
Sensitivity
S
285
360
Saturation signal
Ysat
700
Smear
Sm
Dark signal
Dark signal shading
0.007
Max.
Measurement System
[∗A]
CCD OUT
[∗Y]
Micro unit CCD
C.D.S
AMP
LPF1
Y signal output
(3dB down 4MHz)
Note) Adjust the amplifier gain so that the gain between [∗A] and [∗Y] equals 1.
–8–
Remarks
MCX18N00A/MCX18N00B
Image Sensor Characteristics Measurement Method
Measurement conditions
(1) In the following measurements, each supply voltage is at the typical values.
(2) In the following measurements, spot blemishes are excluded and, unless otherwise specified, the optical
black level (OB) is used as the reference for the signal output, which is taken as the value of Y signal
output of the measurement system.
Definition of Standard Imaging Conditions
1) Standard imaging condition I: Use a pattern box (luminance 706cd/m2, color temperature of 3200K halogen
source) as a subject. (Pattern for evaluation is not applicable.) Use a ND2 filter and image at F5.6 or
equivalent. The luminous intensity to the sensor receiving surface at this point is defined as the standard
sensitivity testing luminous intensity.
2) Standard imaging condition II: Image a light source with a uniformity of brightness within 2% at all angles
(color temperature of 3200K).
1. Sensitivity
Set to standard imaging condition I. After selecting the electronic shutter mode with a shutter speed of
1/250s, measure the Y signal (Ys) at the center of the screen and substitute the values into the following
formula.
S = Ys ×
250
[mV]
60
2. Saturation signal
Set to standard imaging condition II. After adjusting the luminous intensity to 10 times the intensity applying
with an average value of Y signal output, 200mV, measure the minimum value of the Y signal.
3. Smear
Set to standard imaging condition II. With using ND2 filter and the lens diaphragm at F5.6 or equivalent,
adjust the luminous intensity to 500 times the intensity applying with an average value of Y signal output,
200mV. When the readout clock is stopped and the charge drain is executed by the electronic shutter at
the respective H blankings, measure the maximum value YSm [mV] of the Y signal output, and substitute
the values into the following formula.
Sm =
1
YSm
1
×
×
× 100 [%] (1/10V method conversion value)
10
200
500
4. Dark signal
Measure the average value of the Y signal output (Ydt [mV]) with the device ambient temperature of 60°C
and the device in the light-obstructed state, using the horizontal idle transfer level as a reference.
5. Dark signal shading
After measuring 4, measure the maximum (Ydmax [mV]) and minimum (Ydmin [mV]) values of the Y signal
output, and substitute the values into the following formula.
∆Ydt = Ydmax – Ydmin [mV]
–9–
MCX18N00A/MCX18N00B
Optical Characteristics
MCX18N00A
Item
Symbol
Min.
Typ.
Max.
Unit
SH
50
%
Horizontal
SV
25
%
Vertical
Focus length
f
2.9
Aperture
F
2.8
Shading
Resolution
220
R
Remarks
TV lines
Center of screen
Max.
Unit
Remarks
SH
30
%
Horizontal
SV
15
%
Vertical
MCX18N00B
Item
Symbol
Min.
Typ.
Focus length
f
4.0
Aperture
F
2.8
Shading
Resolution
220
R
TV lines
Center of screen
Measurement System
IOY
LPF
Micro unit CCD
AMP
IOC
BPF
– 10 –
VIDEO OUT
MCX18N00A/MCX18N00B
Communication Code Table
CateByte Bit
gory
Symbol
Description
Recommended Initial
EEPROM
value (H)
value (H) Address (H)
1
1
0 to 7
00
00
01
1
2
0 to 7
01
01
02
1
3
0 to 3
0
D
03
1
3
4 to 7
6
6
03
1
4
0 to 3
E
E
04
1
4
4 to 7 YDLY
8
4
04
1
5
0 to 7
24
24
05
1
6
0 to 7
34
34
06
1
7
0 to 7
0B
0B
07
1
8
0 to 7 RMATY
Matrix coefficient
2A
32
08
1
9
0 to 7 RMATC
Matrix coefficient
12
F8
09
1
10 0 to 7 BMATY
Matrix coefficient
3E
32
0A
1
11 0 to 7 BMATC
Matrix coefficient
CA
D3
0B
1
12 0 to 7
0C
0C
0C
1
13 0 to 7
00
00
0D
1
14 0 to 7
FF
00
0E
2
1
0 to 7 YGAIN
86
86
0F
2
2
0 to 7
AA
AA
10
2
3
0 to 7
26
26
11
2
4
0 to 7
84
84
12
2
5
0 to 7
04
04
13
2
6
0 to 7
FC
FC
14
2
7
0 to 3 RBQUAD
Linear matrix quadrant control
—
F
2
7
4
CONGAIN
Linear matrix gain
—
1
2
7
5
CONHUE
Linear matrix hue
—
1
2
7
6 to 7
—
0
2
8
0 to 7 RYGAIN
Linear matrix coefficient
Adjustment value
20
4F, 51, 53, 55
2
9
0 to 7 BYGAIN
Linear matrix coefficient
Adjustment value
11
50, 52, 54, 56
2
10 0 to 7 RYHUE
Linear matrix coefficient
Adjustment value
D0
57, 59, 5B, 5D
2
11 0 to 7 BYHUE
Linear matrix coefficient
Adjustment value
F8
58, 5A, 5C, 5E
3
1
0 to 7
00
00
15
3
2
0 to 7
00
00
16
3
3
0 to 7
00
00
17
3
4
0 to 7 SHOFST
3D
3D
18
3
5
0 to 7
89
89
19
3
6
0 to 7
00
00
1A
Setup level
Luminance signal delay adjustment
Luminance signal gain
Sample-and-hold output offset
– 11 –
MCX18N00A/MCX18N00B
CateByte Bit
gory
Symbol
3
7
0 to 7
4
1
0 to 7 VREFY
4
2
4
Description
Recommended Initial
EEPROM
value (H)
value (H) Address (H)
00
00
1B
VREFY adjustment
Adjustment value
70
1C
0 to 7 VREFC
VREFC adjustment
Adjustment value
66
1D
3
0 to 7 VSUB
VSUB adjustment
Adjustment value
80
1E
4
4
0 to 7
80
80
1F
5
1
0 to 7 AGCCONT Gain control
1E
1E
20
5
2
0 to 7
FF
FF
21
5
3
0
SHTSPDM
Shutter speed (bit 8)
—
0
5
3
1
SHTHL
Electronic shutter high speed/
low speed switching
—
0
5
3
2
SHTON
Electronic shutter OFF/ON
—
0
5
3
3 to 7
—
10
5
4
0 to 7 SHTSPDL
—
00
5
5
0 to 7
—
00
5
6
0 to 7
—
00
5
7
0 to 7
—
00
6
1
0 to 7 WBR
White balance control
3A
3A
22
6
2
0 to 7 WBG
White balance control
26
26
23
6
3
0 to 7 WBB
White balance control
48
48
24
6
4
0 to 7
—
D0
6
5
0 to 7
—
04
7
1
0 to 7
00
00
25
7
2
0 to 7
14
14
26
7
3
0 to 7
05
05
27
7
4
0 to 7
55
55
28
7
5
0 to 7
74
74
29
8
1
0 to 2
—
0
8
1
3
—
0
8
1
4 to 6 AEADJUST AE adjustment mode switching
—
0
8
1
7
AE
AE control
—
0
8
2
0
MCR
Microcontroller control
—
0
8
2
1
SPRS
Suppress control
—
0
8
2
2
—
0
8
2
3
—
0
8
2
4 to 7
—
0
8
3
0 to 7
—
00
AWB
SW
Shutter speed (bit 0 to bit 7)
AWB control
External switch control
– 12 –
MCX18N00A/MCX18N00B
CateByte Bit
gory
Symbol
Description
Recommended Initial
EEPROM
value (H)
value (H) Address (H)
8
4
0
FLON
Flickerless ON/OFF
—
0
8
4
1
BLCOF
Backlight compensation ON/OFF
—
0
8
4
2 to 4
—
0
8
4
5
AWB1
AWB mode selection
—
0
8
4
6
AWB2
AWB mode selection
—
0
8
4
7
AWB3
AWB mode selection
—
0
8
5
0
E2WR
EEPROM write control
—
0
8
5
1
E2WEN
EEPROM write enable transmit
—
0
8
5
2
—
0
8
5
3
E2RSW
EEPROM read control
—
0
8
5
4
E2RAL1
EEPROM read range specification
—
0
8
5
5
E2RAL2
EEPROM read range specification
—
0
8
5
6
E2RAL3
EEPROM read range specification
—
0
8
5
7
E2RAL4
EEPROM read range specification
—
0
8
6
0 to 7 E2CODE
EEPROM control code
—
00
8
7
0 to 7 E2ADRS
EEPROM address
—
00
8
8
0 to 7 E2DATA
EEPROM data
—
00
8
9
0 to 7 SPCODE
SPEC code
—
00
8
10 0 to 7 SPCDAT
SPEC data
—
00
8
11 0 to 7
—
00
9
1
0 to 7
07
07
2A
9
2
0 to 7
00
00
2B
9
3
0 to 7
02
02
2C
9
4
0 to 7
00
00
2D
9
5
0 to 7
80
80
2E
10
1
0 to 7
—
00
10
2
0 to 6 ADJSTH
Horizontal position specification
—
00
10
2
ADJSTVL
Vertical position specification
—
0
10
3
0 to 1 ADJSTVM
Vertical position specification
—
0
10
3
2
—
0
10
3
3
—
0
10
3
4 to 7
—
0
10
4
0
PGON1
Pattern generator ON/OFF
—
0
10
4
1
PGON2
Pattern generator ON/OFF
—
0
10
4
2
—
0
10
4
3
—
0
7
PGON3
Pattern generator ON/OFF
– 13 –
MCX18N00A/MCX18N00B
CateByte Bit
gory
Symbol
10
4
10
4
10
5
0
10
5
1
10
5
10
5
4
10
5
5
10
5
6 to 7 PGGAIN
10
6
10
Recommended Initial
EEPROM
value (H)
value (H) Address (H)
Color bar monochrome switching
—
0
Color specification
—
0
PGHV
Horizontal/vertical switching
—
0
PGRSTR
Raster setting
—
0
Pattern switching
—
0
Pattern generator ON/OFF
—
0
—
0
—
0
0 to 7
—
00
7
0 to 7
—
00
10
8
0 to 7
—
00
10
9
0 to 7
—
00
4
PGCOLSEL
Description
5 to 7 PGCOL
2 to 3 PGPTSL
PGON4
Output level
– 14 –
MCX18N00A/MCX18N00B
SPEC Code Table
Code (H)
1
Symbol
[AE] SPD
Description
AE response speed
2
Recommended
value (H)
Initial
Address
value (H) (H)
08
08
2F
04
04
30
3
[AE] MAX
AE maximum gain
BB
BB
31
4
[AE] MIN
AE minimum gain
Adjustment value
11
32
5
[AE] LIM
AE shutter speed upper limit
07
07
33
EE
EE
34
6
7
[AE] BLC
Backlight compensation control
0C
0C
35
8
[AE] HIST
Histogram backlight compensation control
00
00
36
9
01
01
37
0A
01
01
38
0B
03
03
39
0C
03
03
3A
11
[AWB] SPD
AWB response speed
02
02
3B
12
[AWB] FRM
AWB detection window setting
12
00
3C
13
[AWB] RSFT
03
03
3D
14
[AWB] BSFT
02
02
3E
15
[AWB] USRR
4C
4C
3F
16
[AWB] USRB
58
58
40
17
[AWB] PRER
Adjustment value
3A
41
18
[AWB] PREB
Adjustment value
90
42
21
08
08
43
22
05
05
44
23
05
05
45
24
04
04
46
25
07
07
47
31
52
52
48
32
80
80
49
33
8A
8A
4A
34
3D
3D
4B
35
80
80
4C
36
00
00
4D
– 15 –
MCX18N00A/MCX18N00B
Notes on Handling
1) Static charge prevention
Micro unit CCDs are easily damaged by static discharge. Before handling be sure to take the following
protective measures.
a) Either handle bare handed or use non-chargeable gloves, clothes or material.
Also use conductive shoes.
b) When handling directly use an earth band.
c) Install a conductive mat on the floor or working table to prevent the generation of static electricity.
d) Ionized air is recommended for discharge when handling micro unit CCDs.
e) For the shipment of mounted substrates, use boxes treated for the prevention of static charges.
2) Please use IC socket for mounting of micro unit CCDs.
IC socket : HS6401-K YAMATO SCIENTIFIC CO.,LTD.
3) Dust and dirt protection
a) Operate in clean environments.
b) Do not either touch lens by hand or have any object come in contact with lens surfaces.
Should dirt stick to a lens surface, blow it off with an air blower.
(For dirt stuck through static electricity ionized air is recommended.)
c) Clean with a cotton bud and ethyl alcohol if the grease stained. Be careful not to scratch the lens.
d) Keep in a case to protect from dust and dirt. To prevent dew condensation, preheat or precool when
moving to a room with great temperature differences.
4) Do not expose to strong light (sun rays) for long periods.
5) Exposure to high temperature or humidity will affect the characteristics.
Accordingly avoid storage or usage in such conditions.
6) Micro unit CCDs are precise optical equipment that should not be subject to mechanical shocks.
– 16 –
GND
+15V
+5V
–8V
+3.3V
C132
0.1
DI 14
CLK 13
LD 12
DO 11
AO8 10
VCC 9
4 AO4
5 AO5
6 AO6
7 AO7
8 VDD
AO1 15
2 AO2
3 AO3
GND 16
1 VSS
L109
10µH
L101
10µH
C101
10/6.3V
TP101
S/H OUT
57 VGC
7 AGND
SIFSEL
8
6 AGND
5 SHIN
4 SHOUT
3 DGND
2 DGND
1 DGND
64 VBY
63 VREFY
62 IREFY
61 VGY
60 IOY
59 IOC
TP102
CCDOUT
C126
0.1
R105 220
X102
14.31818MHz
C125 C124
18p 18p
56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41
58 AVDD5
IC101
MCX18N00A/B
C102
0.1
C105
0.1
SO 39
SI 40
CSROM 37
C106 0.1
C107 0.1
C108 0.1
C109 2.2/20V
C110 0.1
X101
27MHz
C121 10p
C111
22/20V
C112
6.8
16V
R118
1k
C116
0.1
L110
10µH
Q103
2SA1586YG
R117
3.3k
C115
1000p
50V
LPF (3.0MHz)
1 2 3
R119
1k
1 2 3
C133
27p
FL101
BPF (3.58MHz)
R114
1k
Q101
2SA1586YG
R113
3.3k
D101
MA159A-TX
(2/2)
R102
1M
C114
0.1
25V
R101
100k
C113
1
35V
D101
MA159A-TX
(1/2)
L106 10µH
C118
0.1
C1191000p C120
10p
C117
10/16V
VL 25
CSEVR 27
DGND 26
CASO 28
CASCK 29
XCS 30
DVDD1 31
CK 32
OSCO 33
OSCI 34
DGND 35
RESETTG 36
C123
0.1
R103 270
C122 0.1
1 2 3
CASI 38
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
C103
2.2/20V
IC104
S-80730AN
R121
47k
R120
33k
R115
1k
+5V
Y
R122
2.2k
C
Q104
2SD2216J-Q
R116
3.3k
Q102
2SD2216J-Q
Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for
any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same.
C104
1/10V
R110 10
R111 3.3k 0.5%
C130 0.1
C129 0.1
R109 220 0.5%
R108 220 0.5%
C127 R107
0.1
10
C128
0.1
VREFC
AGND
IC102
MB88347PFV
R106
3.3k
0.5%
VBC
VH
L102 100µH
R112
10k
CCDOUT
AGND
GND 5
DGND
AVDD4
L103 10µH
RESET 6
DGND
VCC
4 DO
DGND
TEST
L104 10µH
3 DI
VD
AGCCONT
VCC 8
HD
SUBIN
BUSY 7
AGND
AVDD1
2 SK
AVDD6
1 CS
L108 10µH
DCIN
C131
0.1
4FSCI
AVDD3
IC103
AK6420AM
4FSCO
AVDD2
L105 10µH
SO
SI
DCOUT
IREFC
DVDD2
PCOMP
OFFSET
XCLR
OUT
VDD
VSS
RS-232C
R104 100k
SCK
SUBOUT
– 17 –
L107 100µH
IN
GND
OUT
IN
GND
OUT
Application Circuit
MCX18N00A/MCX18N00B
– 18 –
41
56
18.28 ± 0.3
16.2
7.6
40
2°
57
PACKAGE WEIGHT
4.20g
Au
LEAD TREATMENT
LEAD MATERIAL
ceramic
0.30min
64 1
Ø
04
1.
25
9
24
8
1st. pin Index.
35°
18.28 ± 0.3
7.6
PACKAGE MATERIAL
PACKAGE STRUCTURE
MCX18N00A
3.5 ± 0.4
3.20max.
2-1.50max
64pin QFN (720mil)
3.20max.
64-R(0.25)
5.50max
16.08 ± 0.2
P1.016 X 15 = 15.24
64 - 0.50
5.50max
Unit: mm
2-1.50max
8.37 ± 0.5
7.30 ± 0.5
Package Outline
MCX18N00A/MCX18N00B
64 - 0.80
– 19 –
56
57
2°
41
40
PACKAGE WEIGHT
4.20g
Au
LEAD TREATMENT
LEAD MATERIAL
ceramic
PACKAGE MATERIAL
0.30min
64 1
04
1.
Ø
25
9
24
35°
8
1st. pin Index.
18.28 ± 0.3
7.6
3.5 ± 0.4
18.28 ± 0.3
16.2
7.6
PACKAGE STRUCTURE
MCX18N00B
Unit: mm
3.20max.
2-1.50max
64pin QFN (720mil)
5.50max
3.20max.
64-R(0.25)
5.50max
16.08 ± 0.2
P1.016 X 15 = 15.24
64 - 0.50
2-1.50max
9.57 ± 0.5
8.50 ± 0.5
Package Outline
MCX18N00A/MCX18N00B
64 - 0.80