HFA15TB60-1 Pb HFA15TB60-1 Pb Free Plating Product 15Amperes,600Volts Single Hyper Fast Soft Recovery Epitaxial Diode TO-262/I2PAK APPLICATION · · · · · · · 4 K(Bottom Side Metal Heatsink) Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE · Ultrafast Recovery Time 3 A 2 K Internal Configuration 1 N/C · Soft Recovery Characteristics · Low Recovery Loss 3 · Low Forward Voltage PIN A=Anode · High Surge Current Capability 2 PIN K=Cathode 4 CASE K=Cathode 1 PIN N/C(None Collect) · Low Leakage Current GENERAL DESCRIPTION HFA15TB60-1 using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics. Absolute Maximum Ratings Parameter Repetitive peak reverse voltage Symbol VRRM Test Conditions Values 600 Continuous forward current IF(AV) Tc =110°C 15 Single pulse forward current IFSM Tc =25°C 120 Maximum repetitive forward current IFRM Square wave, 20kHZ 30 Operating junction Storage temperatures Rev.08T © 1995 Thinki Semiconductor Co., Ltd. Units V A Tj 175 °C Tstg -55 to +175 °C Page 1/3 http://www.thinkisemi.com.tw/ HFA15TB60-1 Electrical characteristics (Ta=25°C unless otherwise specified) Parameter Breakdown voltage Blocking voltage Symbol VBR, VR Forward voltage (Per Diode) VF Reverse leakage current(Per Diode) IR Reverse recovery time(Per Diode) trr Test Conditions Min Typ. Max. Units IR=100µA 600 IF=15A 1.35 1.60 V IF=15A, Tj =125°C 1.20 1.40 VR= VRRM 20 Tj=150°C, VR=600V 200 IF=0.5A, IR=1A, IRR=0.25A 35 45 IF=1A,VR=30V, di/dt =200A/us 27 35 µA ns Thermal characteristics Paramter Symbol Junction-to-Case RθJC Typ ２．０ Units ℃/W Electrical performance (typic) Rev.08T © 1995 Thinki Semiconductor Co., Ltd. Page 2/3 http://www.thinkisemi.com.tw/ HFA15TB60-1 TO-262 DIMENSIONS in millimeters and inches Modified JEDEC outline TO-262 (Datum A) (2) (3) E A A c2 B E A (3) L1 Seating plane D 1 2 3 C L2 B D1 (3) B C L (2) A c 3 x b2 3xb E1 A1 (3) Section A - A 2xe Plating 0.010 M A M B (4) b1, b3 Base metal Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip SYMBOL c1 c (4) (b, b2) Section B - B and C - C Scale: None MILLIMETERS INCHES MIN. MAX. MIN. MAX. 0.190 A 4.06 4.83 0.160 A1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 NOTES 4 4 4 D 8.51 9.65 0.335 0.380 D1 6.86 8.00 0.270 0.315 3 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 e 2.54 BSC 0.100 BSC L 13.46 14.10 0.530 0.555 L1 - 1.65 - 0.065 L2 3.56 3.71 0.140 0.146 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 Rev.08T © 1995 Thinki Semiconductor Co., Ltd. 2 (4) (5) (6) 3 Dimension b1 and c1 apply to base metal only Controlling dimension: inches Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline Page 3/3 http://www.thinkisemi.com.tw/