JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
MPS651
TRANSISTOR (NPN)
1.EMITTER
FEATURES
z General Purpose Amplifier
2.BASE
3.COLLECTOR
1
Equivalent Circuit
MPS651
333
036 'HYLFHFRGH
6ROLGGRW
*UHHQPROGLQJFRPSRXQGGHYLFH
LIQRQHWKHQRUPDOGHYLFH
;;; &RGH
,& & &('
" !
"-.*
"-.*
"-./
036
72
%XON
1000pcs/Bag
0367$
72
Tape
2000pcs/Box
!
" #
#$%& Collector-Base Voltage
80
V
#$'& Collector-Emitter Voltage
60
V
#'%& Emitter-Base Voltage
5
V
$ Collector Current -Continuous
2
A
)
*
625
mW
Thermal Resistance I rom Junction
Wo Ambient
200
Junction Temperature
1
/W
Collector Power Dissipation
"( ș +
www.cj-elec.com
-55 a
St orage Temperature
1
(,$XJ,201
'4'$ $4$7$ '
$
T =25 unless otherwise specified
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter
breakdown
Emitter-base breakdown voltage
Test
V(BR)CBO
V(BR)CEO
*
V(BR)EBO
conditions
Min
Typ
Max
Unit
IC= 0.1mA,IE=0
80
V
IC=10mA,IB=0
60
V
IE=0.01mA,IC=0
5
V
Collector cut-off current
ICBO
VCB=80V,IE=0
0.1
A
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.1
A
*
hFE(1)
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE=2V, IC=50mA
75
hFE(2)
*
VCE=2V, IC=500mA
75
hFE(3)
*
VCE=2V, IC=1A
75
hFE(4)
*
VCE=2V, IC=2A
40
VCE(sat) (1)
*
IC=2A,IB=200mA
0.5
V
VCE(sat) (2)
*
IC=1A,IB=100mA
0.3
V
IC=1A,IB=100mA
1.2
V
1
V
VBE(sat)
Base-emitter voltage
VBE
Transition frequency
fT
*
*
IC=1A, VCE=2V
VCE=5V,IC=50mA,f=100MHz
75
MHz
*Pulse test: pulse width 300s, duty cycle 2.0%.
www.cj-elec.com
($XJ
Typical Characteristics
Static Characteristic
o
Ta=100 C
COMMON
EMITTER
Ta=25ć
5.5mA
4.95mA
4.4mA
1.0
hFE —— IC
300
DC CURRENT GAIN hFE
COLLECTOR CURRENT IC (A)
1.5
3.85mA
3.3mA
2.75mA
2.2mA
0.5
1.65mA
250
200
o
Ta=25 C
150
1.1mA
VCE= 2V
IB=0.55mA
0.0
0
2
4
6
COLLECTOR-EMITTER VOLTAGE
8
VCE
1
10
VCEsat ——
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
200
800
Ta=25ć
600
Ta=100ć
400
100
COLLECTOR CURRENT
(V)
VBEsat —— IC
1000
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
100
IC
1000
(mA)
2000
IC
=10
150
100
Ta=100ć
50
Ta=25ć
=10
200
0.1
1
10
100
COLLECTOR CURRENT
IC ——
0
1000 2000
1
10
(mA)
100
COLLECTOR CURRENT
VBE
Cob / Cib
1000
——
1500
1000
o
Ta=100 C
Ta=25ć
2000
1000
IC
(mA)
VCB / VEB
f=1MHz
IE=0 / IC=0
50
CAPACITANCE C (pF)
COLLECTOR CURRENT
IC (mA)
2000
IC
o
Ta=25 C
Cib
100
Cob
500
VCE=2V
0
0
200
400
600
BASE-EMITTER VOLTAGE
fT
——
10
0.1
1000
IC
1
REVERSE VOLTAGE
Pc
750
COLLECTOR POWER DISSIPATION
Pc (mW)
TRANSITION FREQUENCY fT (MHz)
300
800
VBE(mV)
100
——
V
(V)
10
20
Ta
625
500
375
250
125
VCE=5V
o
Ta=25 C
10
0
20
40
COLLECTOR CURRENT
www.cj-elec.com
60
IC
0
80
0
25
50
75
AMBIENT TEMPERATURE
(mA)
100
Ta
125
150
(ć )
(,$XJ,201
&9:"-.*&( !
A
A1
b
c
D
D1
E
e
e1
L
h
( ( -
3
3
3.300
3.700
0.130
0.146
1.100
1.400
0.043
0.055
0.380
0.550
0.015
0.022
0.360
0.510
0.014
0.020
4.
4.700
3.430
0.135
4.300
4.700
0.169
0.185
1.270 TYP
0.050 TYP
2.440
2.640
0.096
0.104
14.100
14.500
0.555
0.571
1.600
0.063
0.000
0.380
0.000
0.015
&9: **"4
ZZZFMHOHFFRP($XJ
&9:7DSHDQG5HHO
ZZZFMHOHFFRP($XJ