DEC DB606 6 amp silicon bridge rectifier Datasheet

DIOTEC ELECTRONICS CORP.
Data Sheet No. BRDB-600-1D
ABDB-600-1D
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
6 AMP SILICON BRIDGE RECTIFIERS
MECHANICAL SPECIFICATION
FEATURES
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
MECHANICAL STRENGTH AND HEAT DISSIPATION
(Solder Voids: Typical < 2%, Max. < 10% of Die Area)
ACTUAL SIZE
SERIES DB600 - DB610 and ADB604 - ADB608
DT
DB602
BUILT-IN STRESS RELIEF MECHANISM FOR
SUPERIOR RELIABILITY AND PERFORMANCE
BH
SURGE OVERLOAD RATING TO 250 AMPS PEAK
UL RECOGNIZED - FILE #E124962
LL
RoHS COMPLIANT
_
LD
+
D1
MECHANICAL DATA
Case: Molded Epoxy (UL Flammability Rating 94V-0)
SYM
Terminals: Round silver plated copper pins
MILLIMETERS
INCHES
+
MIN
MAX
MIN
MAX
D1
BL
14.7
15.7
0.58
0.62
Soldering: Per MIL-STD 202 Method 208 guaranteed
BH
5.8
6.9
0.23
0.27
Polarity: Marked on side of case; positive lead at beveled corner
D1
10.3
11.3
0.405
0.445
Mounting Position: Any. Through hole provided for #6 screw
LL
LD
19.0
1.0
n/a
1.1
0.75
0.039
n/a
0.042
Weight: 0.13 Ounces (3.6 Grams)
BL
_
BL
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
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PARAMETER (TEST CONDITIONS)
SYMBOL
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å
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ïç ð M
ï ñåG
ïMéëòê óOôOõ
UNITS
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oprqtsu=swvx=y{z=||~}===r===
Series Number
Maximum DC Blocking Voltage
V IJ
Working Peak Reverse Voltage
V ;=<?>
Maximum Peak Recurrent Reverse Voltage
V @@A
V BDC BEGF H
RMS Reverse Voltage
Power Dissipation in V
RATINGS
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Region for 100 mS Square Wave
Continuous Power Dissipation in V
8 9
:
@ T =80 C (Heat Sink Temp)
4 567
P lm
Region
Pn
Thermal Energy (Rating for Fusing) t < 8.3mSec
1
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ö
°± ²
÷
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I üýþ
ÿ
T , T Minimum Avalanche Voltage
V! "$#&%('*) +
See Note 5
Maximum Avalanche Voltage
V, -$.&/$0132
See Note 5
V 4(5
Typical Junction Capacitance (Note 4)
Maximum Reverse Current at Rated V M$N
P
@ T = 25 C
Q
R
@T = 125 C
Minimum Insulation Breakdown Voltage (Circuit to Case)
O
ËÌ=Ì
WATTS
û
AMPS
Junction Operating and Storage Temperature Range
Maximum Forward Voltage (Per Diode) at 6 Amps DC
Í=Î=Ï
AMPS
SEC
I3
Average Forward Rectified Current, T = 60 C (Note 2)
%==
VOLTS
It
Peak Forward Surge Current. Single 60Hz Half-Sine Wave
2
Superimposed on Rated Load (JEDEC Method). Tc = 60 C
0
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°C
VOLTS
7 8 9:<; =(>&?&@ AB C(DE7 8 9F
C6
I S$T
V U VW
RIKJL
Typical Thermal Resistance, Junction to Case (Note 2)
f gihj(k$lnm o pKqrKs t3uKv w xzyz{&r3|$}~{ ~tzzw |z £ ¤ ¥ ¦ §z¨©zª~« ¬~£ ®~©z¤ ¯~° zw s w r3| t }~{zv $zs ~rzi~r3K|~xu~{ t { {z|$uKv w xzyz{ z|zxr3z|~t w |~y&zKv z { rKv3$~zw z}~{ tzt v z|~ {zv
m pKq(v w xzyz{&r3K| t {zx&r3|&z ~3 $~ o o t }zw ~ m o ~ ~~zK $~ ~p Ks zw |K~zs t {
m pKq(v w xzyz{&r3K| t {zx&r3|3qr~Kv x £&¤ ¥ ¦&±z² ³z´©zµK² ¶ · ¸ ¹¹º©~µ3² »zª ¼3½z½~¬z«3½ ¾z¿z© ¾z¯z¿Àz« ¤ ¿K°~¬$Á ¬ ¾z¿Á ¬z¯z°z¥ ¦&¼zÂ ~ ~m z zp
m ~pK{~ zKv {zx ~t3o $&z|zx&KzKs w {zxv {~ {zv { ~r3s t ~yz{&rzzz Kr3s t
m ~pz3}~{ {$uKv w xKy~{~{~z}Kw uzw t~t }~{ ~ zs z|z~}~{ z} Kv z t {zv w ~t w tuzv { z xzrz&|z z¡zrKKvzKzKs w t w rK|$v {~3Kw v { K {z~w w &uKv {~z xKrz | ~r3s t ~yz{$v K|~yz{z¢ zs { ~ {& r3|~t ~ t3~z
G&H
X
Y Z
[\]]
pF
mA
VOLTS
^
C/W
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E25
DIOTEC ELECTRONICS CORP.
Data Sheet No. BRDB-600-2D
ABDB-600-2D
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
6 AMP SILICON BRIDGE RECTIFIERS
RATING & CHARACTERISTIC CURVES FOR SERIES DB600 - DB610 and SERIES ADB604 - ADB608
" # $
9.0
Peak Forward Surge Current
(Amperes)
Average Forward Current, Io
(Amperes)
60Hz
Resistive or Inductive Loads
7.5
6.0
Case, Tc
NOTE 1
4.5
3.0
1.5
!
( ) *
% & '
+ , . / /
2 3
4 5
0
0
50
NOTE 2
0 1
150
100
Ê
Temperature, C
Number of Cycles at 60 Hz
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
FIGURE 1. FORWARD CURRENT DERATING CURVE
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õ÷
ü önøKùú<ý û
Instantaneous Reverse Current, I
(Microamperes)
Instantaneous Forward Current
Amperes
100
ËKÌ
1.0
NOTE 3
0.1
0.01
0.4
îæ
ó ïnðKñ3ñ<ô ò
10
1.0
äæ
åèçé<ì ê
ëí
0.1 Þ
0.6
0.8
1.0
1.2
1.4
1.6
ÙÚÜÛÝ
ßàâáã
ÏKÐÐÒÑKÓ3ÔÖÕz×Ø
1.8
Percent of Rated Peak Reverse Voltage
Instantaneous Forward Voltage (Volts)
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS PER DIODE
NOTES
þ$ÿ
(1) Case Temperature, T With Bridge Mounted on 4"Sq. x 0.11" Thick
(10.5cm Sq. x 0.3cm) Aluminum Plate
NOTE 4
Capacitance, pF
100
(2) T = 150 C
(3) T = 25 C; Pulse Width = 300mSec; 1% Duty Cycle
(4) T = 25 C; f = 1 MHz; Vsig = 50mVp-p
50 - 400V
600 - 1000V
Reverse Voltage, (Volts)
FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
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E26

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