CJP718 DFNWB2*2-3L Plastic-Encapsulate Transistors CJP718 TRANSISTOR (PNP) DFNWB2*2-3L FEATURE z Low Equivalent On Resistance z Low Staturation Voltage 2 3 1 APPLICATIONS z DC-DC Converters (FET Driving) z Charging Circuits z Power Switches z Motor Control MARKING: COLLECTOR 3 1 BASE front 2 EMITTER back Tape Drawing (Unit : mm) Maximum ratings (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -25 VCEO Collector-Emitter Voltage -20 VEBO Emitter-Base Voltage -7.5 Unit V IC Collector Current-Continuous -6 A PD Power Dissipation 1 W Thermal Resistance. Junction to Ambient 125 ℃/W Junction Temperature 150 RθJA Tj Tstg Storage Temperature Range [email protected] -55~+150 www.zpsemi.com ℃ 1 of 4 CJP718 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA,IE=0 -25 V Collector-emitter breakdown voltage* V(BR)CEO IC=-10mA,IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA,IC=0 -7.5 V Collector cut-off current ICBO VCB=-20V,IE=0 -25 Emitter cut-off current IEBO VEB =-6V , IC=0 -25 nA DC current gain* Collector-emitter saturation voltage* VCE=-2V,IC=-10mA 300 VCE=-2V,IC=-100mA 300 VCE=-2V,IC=-2A 150 VCE=-2V,IC=-6A 15 hFE VCE(sat) IC=-0.1A,IB=-10mA -30 IC=-1A,IB=-20mA -220 IC=-1.5A,IB=-50mA -250 IC=-2.5A,IB=-150mA -350 IC=-3.5A,IB=-350mA -300 Base-emitter turn-on voltage* VBE(on) VCE=-2V,IC=-3.5A Base-emitter saturation voltage* VBE(sat) IB=-350mA,IC=-3.5A VCE=-10V,IC=-50mA, Transition frequency fT Turn-on time ton VCB=-10V,IC=-1A, 40 Turn-off time toff IB1= IB2=-10mA 670 f=100MHz 150 mV -0.95 V -1.075 V MHz ns * Pulse Test : Pulse width≤300µs, duty cycle ≤2%. [email protected] www.zpsemi.com 2 of 4 CJP718 600 -810uA (A) VCE= -2V COMMON EMITTER Ta=25℃ -900uA -0.30 o hFE -720uA IC -630uA DC CURRENT GAIN 400 -540uA -0.20 Ta=100 C 500 -0.25 COLLECTOR CURRENT IC hFE —— Static Characteristic -0.35 -450uA -0.15 -360uA -270uA -0.10 o Ta=25 C 300 o Ta=-45 C 200 -180uA 100 -0.05 IB=-90uA -0.00 -0 -1 -2 -3 -4 -5 COLLECTOR-EMITTER VOLTAGE VBE —— 0 -0.01 -6 -0.1 (V) VCE IC VBEsat —— IC (A) IC -1.4 -6 -6 -1 COLLECTOR CURRENT VCE=-2V β=50 -1.2 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT IC (A) -5 -4 o -3 Ta=100 C o -2 Ta=-45 C -1.0 Ta=-45℃ -0.8 -0.6 Ta=25℃ Ta=100℃ o Ta=25 C -0.4 -1 -0 -0.0 -0.7 BASE-EMITTER VOLTAGE VCEsat —— -0.2 -1E-3 -1.4 VBE(V) -0.01 -0.1 COLLECTOR CURRENT IC -1 VCEsat —— -1 -6 -1 IC (A) IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) β=50 -0.1 β=100 -0.01 β=50 Ta=100℃ Ta=25℃ -0.1 Ta=-45℃ β=10 Ta=25℃ -1E-3 -1E-3 -0.01 -0.1 COLLECTOR CURRENT [email protected] -1 IC -6 -0.01 -1E-3 -0.01 -0.1 COLLECTOR CURRENT (A) www.zpsemi.com -1 IC -6 (mA) 3 of 4 CJP718 fT —— Cob / Cib IC f=1MHz IE=0 / IB=0 o Ta=25 C 250 180 (pF) Cib C 200 CAPACITANCE TRANSITION FREQUENCY VCB / VEB —— 240 fT (MHz) 300 150 100 120 Cob 60 50 VCE=-10V o Ta=25 C 0 -0 -50 -100 COLLECTOR CURRENT Pc COLLECTOR POWER DISSIPATION Pc (W) 1.2 —— IC 0 -0.1 (mA) -1 REVERSE BIAS VOLTAGE -10 V (V) Ta 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 AMBIENT TEMPERATURE [email protected] 100 Ta 125 150 (℃ ) www.zpsemi.com 4 of 4