PD - 91879A
IRF7207
HEXFET® Power MOSFET
l
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l
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Generation 5 Technology
P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
VDSS = -20V
RDS(on) = 0.06Ω
T op V ie w
Description
Fifth Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in a
typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
VGS
VGSM
EAS
dv/dt
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
Units
-20
-5.4
-4.3
-43
2.5
1.6
0.02
± 12
-16
140
-5.0
-55 to + 150
V
A
W
W/°C
V
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient
Typ.
Max.
Units
–––
50
°C/W
1
6/5/00
IRF7207
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-20
–––
–––
–––
-0.7
8.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.011
–––
–––
–––
–––
–––
–––
–––
–––
15
2.2
5.7
11
24
43
41
780
410
200
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
0.06
VGS = -4.5V, ID = -5.4A
Ω
0.10
VGS = -2.7V, ID = -2.7A
–––
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -5.4A
-1.0
VDS = -16V, VGS = 0V
µA
-25
VDS = -16V, VGS = 0V, TJ = 125°C
-100
VGS = 12V
nA
100
VGS = -12V
22
ID = -5.4A
3.3
nC
VDS = -10V
8.6
VGS = -4.5V,
–––
VDD = -10V
–––
ID = -1.0A
ns
–––
RG = 6.0Ω
–––
RD = 10Ω,
–––
VGS = 0V
–––
pF
VDS = -15V
–––
ƒ = 1.0MHz,
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-3.1
–––
–––
-43
–––
–––
–––
–––
42
50
-1.0
63
75
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -3.1A, VGS = 0V
TJ = 25°C, I F = -3.1A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 9.6mH
ISD ≤ -5.4A, di/dt ≤ -79A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = -5.4A.
When mounted on 1 inch square copper board, t<10 sec
2
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IRF7207
100
100
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
10
-2.25V
20µs PULSE WIDTH
T = 25 C
J
1
0.1
°
1
10
-2.25V
10
Fig 1. Typical Output Characteristics
TJ = 25 ° C
TJ = 150 ° C
10
V DS = -10V
20µs PULSE WIDTH
4.0
5.0
Fig 3. Typical Transfer Characteristics
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6.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
2.0
3.0
°
1
10
Fig 2. Typical Output Characteristics
100
-VGS , Gate-to-Source Voltage (V)
J
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
1
2.0
20µs PULSE WIDTH
T = 150 C
1
0.1
ID = -5.4A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
-10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7207
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
1200
Ciss
800
Coss
400
Crss
10
10
8
6
4
2
0
1
ID = -5.4A
VDS = -10V
-VGS , Gate-to-Source Voltage (V)
1600
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
5
-VDS , Drain-to-Source Voltage (V)
10
15
20
25
30
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY R
TJ = 150 ° C
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
DS(on)
10
TJ = 25 ° C
1
0.1
0.4
V GS = 0 V
0.6
0.7
0.9
1.1
1.2
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1.4
100us
10
1ms
1
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7207
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
TC , Case Temperature
150
EAS , Single Pulse Avalanche Energy (mJ)
5.0
-ID , Drain Current (A)
400
6.0
ID
-2.4A
-4.3A
BOTTOM -5.4A
TOP
300
200
100
0
25
( °C)
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
P DM
0.02
1
t1
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7207
SO-8 Package Details
D IM
D
-B -
5
8
E
-A -
1
7
2
5
A
6
3
e
6X
5
H
0 .2 5 (.0 1 0 )
4
M
A M
θ
e1
-C -
0 .1 0 (.0 0 4 )
B 8X
0 .2 5 (.0 1 0 )
A1
L
8X
6
C
8X
M C A S B S
NOTES:
1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 .
2 . C O N T R O L L IN G D IM E N S IO N : IN C H .
3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A .
5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ).
6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E ..
M IN
M AX
.05 32
.06 88
1.3 5
1.75
.00 40
.00 98
0.1 0
0.25
B
.01 4
.01 8
0.3 6
0.46
C
.00 75
.009 8
0.19
0.25
D
.18 9
.196
4.80
4.98
E
.15 0
.15 7
3.8 1
3.99
e1
θ
A
M ILLIM E T E R S
M AX
A1
e
K x 4 5°
IN C H E S
M IN
.05 0 B A S IC
1.27 B A S IC
.02 5 B A S IC
0 .635 B A S IC
H
.22 84
.244 0
K
.01 1
.01 9
0.2 8
5.8 0
0.48
6.20
L
0.16
.05 0
0.4 1
1.27
θ
0°
8°
0°
8°
R E C O M M E N D E D F O O T P R IN T
0 .7 2 (.0 2 8 )
8X
6 .4 6 ( .2 5 5 )
1 .7 8 (.0 7 0 )
8X
1 .2 7 ( .0 5 0 )
3X
Part Marking
6
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IRF7207
Tape and Reel
T E R M IN A L N U M B E R 1
1 2 .3 ( .48 4 )
1 1 .7 ( .46 1 )
8 .1 ( .31 8 )
7 .9 ( .31 2 )
F E E D D IR E C T IO N
N O TES:
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1.
33 0.0 0
(1 2 .9 9 2 )
M AX .
1 4 .4 0 ( .5 66 )
1 2 .4 0 ( .4 88 )
N O TE S :
1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
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Data and specifications subject to change without notice. 6/00
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