NEC NE73430-T1 Npn silicon general purpose transistor Datasheet

NPN SILICON GENERAL
PURPOSE TRANSISTOR
NE734
SERIES
FEATURES
• LOW NOISE FIGURE: < 3 dB at 500 MHz
• HIGH GAIN: 15 dB at 500 MHz
• HIGH GAIN BANDWIDTH PRODUCT: 2 GHz
(3 GHz for the NE73435)
• SMALL COLLECTOR CAPACITANCE: 1 pF
• HIGH RELIABILITY METALLIZATION
35 (MICRO-X)
30 (SOT 323 STYLE)
DESCRIPTION
NE73433 is in the plastic Mini-Mold package designed for
high-speed automated assembly operations for large volume
hybrid ICs. For hybrid MIC applications requiring more performance, the NE73435 is recommended. This device is packaged in the economical metal-ceramic, hermetic Micro-X package.
The NE734 series of NPN silicon general purpose UHF transistors provide the designer with a wide selection of reliable
transistors for high speed logic and wide-band low noise
amplifier applications. The series uses NEC's highly reliable
platinum-silicide, titanium, platinum, and gold metallization
system to assure uniform performance and reliability. The
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
fT
PARAMETERS AND CONDITIONS
Gain Bandwidth Product at
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 5 mA
NFMIN
MAG
|S21E|2
hFE
Minimum Noise Figure2 at
VCE = 10 V, IC = 3 mA, f = 0.5 GHz
VCE = 10 V, IC = 5 mA, f = 0.9 GHz
Maximum Available Gain3 at
VCE = 10 V, IC = 10 mA,
f = 0.5 GHz
f = 1 GHz
Insertion Power Gain at VCE = 10 V, IC = 10 mA,
f = 0.5 GHz
f = 1 GHz
NE73430
2SC4185
30
UNITS
MIN
TYP
GHz
GHz
2.3
dB
dB
4.0
MAX
MIN
TYP
1.5
3.0
2.1
dB
dB
17
dB
dB
Forward Current Gain Ratio at
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 5 mA
NE73435
2SC2148
35
100
3.5
18
13
8
40
MAX
8
16
9
25
100
200
180
ICBO
Collector Cutoff Current at VCB = 15 V, IE = 0
µA
IEBO
Emitter Cutoff Current at VEB = 2 V, IC = 0
µA
CCB
Collector to Base Capacitance4 at
VCB = 10 V, IC = 0 mA, f = 1 MHz
pF
Total Power Dissipation
mW
150
250
Thermal Resistance (Junction to Case)
°C/W
833
550
PT
RTH
0.1
0.1
0.1
1.5
0.75
.55
1.5
Notes:
1. Electronic Industrial Association of Japan.
2. Input and output are tuned for optimum noise figures.
3. Maximum Available Gain (MAG) is calculated
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
4. CCB measurement employs a three-terminal capacitance bridge incorporating a guard circuit. The emitter terminal shall be connected to the
guard terminal.
California Eastern Laboratories
NE734 SERIES
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
30
VCEO
Collector to Emitter Voltage
V
14
VEBO
Emitter to Base Voltage
V
3
NE73435
TYPICAL NOISE PARAMETERS (TA = 25°C)
ΓOPT
FREQ.
NFOPT
GA
(MHz)
(dB)
(dB)
MAG
ANG
Rn/50
VCE = 10 V, IC = 3 mA
IC
Collector Current
mA
50
500
2.0
16.1
0.30
80
0.63
TJ
Junction Temperature
°C
2002
3.1
11.2
0.43
126
0.33
Storage Temperature
°C
1000
TSTG
-65 to +2003
1500
4.2
9.2
0.54
168
0.19
2000
5.1
7.1
0.56
178
0.20
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Maximum Junction Temperature for the NE73430 is 150°C.
3. Maximum Storage Temperature for the NE73430 and the
NE73435 Grade D is 150°C.
VCE = 10 V, IC = 15 mA
500
3.3
17.5
0.34
120
0.36
1000
4.7
13.5
0.47
168
0.27
1500
6.5
10.8
0.67
-174
0.13
2000
7.4
9.2
0.64
-163
0.46
TYPICAL PERFORMANCE CURVES (TA = 25°C)
DC CURRENT GAIN
vs. COLLECTOR CURRENT
SATURATION VOLTAGE vs.
COLLECTOR CURRENT
500
VBE(SAT)
DC Forward Current Gain, hFE
Collector to Emitter and
Base to Emitter Saturation Voltage
VCE (SAT), VBE (SAT) (V)
2
1
0.7
IC = 10XIB
0.5
0.3
0.2
0.1
0.07
VCE(SAT)
0.05
200
VCE = 10 V
100
70
VCE = 1 V
50
30
20
0.03
10
0.02
0.1
0.2
0.5
1
2
5
10
20
50
Collector Current, IC (mA)
10
7
5
3
VCE = 10 V
NE73435
2
1
0.7
0.5
0.3
0.2
0.1
0.5 0.7 1
2
3
5 7
10
20
Collector Current, IC (mA)
0.5 0.7 1
2
3
5
7
10
20
Collector Current, IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain Bandwidth Product, fT (GHz)
300
30
50
30
50
NE734 SERIES
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE73435
NOISE FIGURE vs.
COLLECTOR CURRENT
NE73435
GAIN vs. FREQUENCY
32
6
VCE = 10 V
IC = 30 mA
VCE = 10 V
f = 500 MHz
5
Noise Figure, NF (dB)
24
Gain, (dB)
MAG
|S21E| 2
16
8
4
3
2
NE73435 TUNED
0
1
0.1
0.2
0.3
0.5 0.7
1
2
3
5
0.5 0.7 1
2
3
5
7
10
20
30
50
Collector Current, IC (mA)
Frequency, f (GHz)
ORDERING INFORMATION
PART NUMBER
QUANTITY
NE73430-T1
NE73435
Note:
1. Embossed tape 12 mm wide.
3000
1
PACKAGING
Tape & Reel
ESD Bag
NE734 SERIES
TYPICAL COMMON EMITTER SCATTERING PARAMETERS
90˚
1
0.8
1.5
0.6
2
135˚
0.4
45˚
S21
3
4
5
0.2
0.2
0.4
0.6
0.8 1
1.5
2
3
4 5
10
20
50
10 20 -50
S12
180˚
0.05
-20
-5
-4
S11
10.00
-3
-0.4
-0.6
-1.5
-0.8
15.00
315˚
Coordinates in Ohms 225˚
Frequency in GHz
(VCE = 10 V, IC = 20 mA)
-2
-1
0˚
5.00
-10
S22
-0.2
0.10 0.15
20.00
270˚
NE73435
VCE = 10 V, IC = 3 mA
FREQUENCY
S11
S21
S12
S22
MAG
K
ANG
MAG1
(MHz)
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
100
200
500
1000
1500
2000
2500
3000
4000
0.861
0.810
0.676
0.616
0.607
0.610
0.613
0.618
0.630
-28.4
-55.0
-115.5
-156.0
-175.1
171.3
160.0
149.5
128.9
6.880
6.206
4.323
2.494
1.709
1.317
1.071
0.896
0.647
157.0
139.8
104.1
74.4
55.6
39.0
25.3
13.0
-8.4
0.026
0.047
0.070
0.085
0.095
0.107
0.118
0.132
0.170
70.5
56.9
37.3
30.5
32.2
32.2
33.9
33.5
33.7
0.960 -11.1
0.865 -19.2
0.689 -29.0
0.612 -38.3
0.612 -49.8
0.616 -62.2
0.632 -74.0
0.649 -87.3
0.657 -112.9
0.19
0.28
0.50
0.84
1.05
1.16
1.20
1.19
1.20
24.2
21.2
17.9
14.7
11.2
8.5
6.9
5.7
3.1
-39.0
-74.2
-134.4
-166.4
178.1
166.2
155.9
146.0
126.0
10.428
8.974
5.214
2.797
1.893
1.442
1.161
0.967
0.690
151.6
131.4
96.8
70.8
53.1
37.6
24.2
12.0
-9.3
0.025
0.040
0.056
0.073
0.088
0.102
0.117
0.133
0.176
66.2
52.9
37.4
37.1
39.9
39.9
41.0
40.6
39.2
0.923 -14.4
0.788 -22.4
0.613 -28.4
0.563 -36.6
0.572 -47.9
0.582 -60.5
0.604 -72.5
0.628 -85.9
0.639 -111.8
0.22
0.31
0.62
0.94
1.09
1.16
1.15
1.10
1.09
26.2
23.5
19.7
15.8
11.5
9.1
7.6
6.7
4.1
-62.0
-106.6
-153.4
-175.8
171.8
161.4
151.8
142.4
122.6
16.892
12.598
5.959
3.063
2.039
1.532
1.220
1.009
0.712
142.1
118.5
89.6
67.1
50.5
35.2
22.4
10.4
-10.1
0.020
0.031
0.042
0.061
0.080
0.096
0.112
0.132
0.182
59.4
48.8
42.9
47.2
48.7
48.3
48.3
47.9
44.2
0.846 -19.1
0.677 -24.6
0.541 -25.9
0.521 -33.7
0.541 -45.3
0.559 -58.0
0.586 -70.7
0.612 -84.2
0.627 -111.0
0.26
0.40
0.81
1.07
1.12
1.14
1.10
1.02
0.96
29.3
26.1
21.5
15.4
12.0
9.8
8.4
8.0
5.9
-94.8
-134.2
-165.6
178.2
167.5
157.8
148.5
139.0
119.3
22.708
14.233
6.118
3.061
2.014
1.506
1.190
0.976
0.682
130.8
108.5
84.3
63.8
47.5
32.9
20.3
8.7
-11.2
0.015
0.023
0.034
0.054
0.072
0.089
0.108
0.132
0.190
57.7
48.1
51.7
53.6
55.5
55.1
56.1
55.3
49.2
0.761 -21.6
0.599 -23.0
0.515 -22.0
0.517 -30.8
0.545 -43.4
0.564 -56.8
0.594 -69.8
0.621 -83.9
0.634 -111.2
0.32
0.55
0.95
1.13
1.14
1.12
1.02
0.91
0.86
31.8
27.9
22.6
15.3
12.2
10.2
9.6
8.7
5.6
VCE = 10 V, IC = 5 mA
100
200
500
1000
1500
2000
2500
3000
4000
0.798
0.733
0.628
0.603
0.605
0.613
0.621
0.628
0.644
VCE = 10 V, IC = 10 mA
100
200
500
1000
1500
2000
2500
3000
4000
0.687
0.635
0.603
0.607
0.621
0.633
0.646
0.652
0.672
VCE = 10 V, IC = 20 mA
100
200
500
1000
1500
2000
2500
3000
4000
0.584
0.594
0.613
0.632
0.650
0.666
0.678
0.686
0.699
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE734 SERIES
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 30
RECOMMENDED P.C.B. LAYOUT
OUTLINE 30
(SOT-323)
2.1 ± 0.2
1.25 ± 0.1
1.7
2
2.0 ± 0.2
0.65
2
+0.1
0.3 -0.05
(ALL LEADS)
1.3
3
3
1
MARKING
1.3
1. Emitter
2. Base
3. Collector
0.15
0.9 ± 0.1
0.65
0.6
1
0.8
+0.10
0.15 -0.05
0 to 0.1
PACKAGE OUTLINE 35
(MICRO-X)
E
3.8 MIN
ALL LEADS
0.5±0.06
B
C
45˚
1. Collector
2. Emitter
3. Base
4. Emitter
E
2.55±0.2
+0.06
0.1 -0.04
φ2.1
1.8 MAX
0.55
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES ¥ Headquarters ¥ 4590 Patrick Henry Drive ¥ Santa Clara, CA 95054-1817 ¥ (408) 988-3500 ¥ Telex 34-6393 ¥ FAX (408) 988-02
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) ¥ Internet: http://WWW.CEL.COM
06/21/2001
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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