SPANSION AM29LV640MB110R 64 megabit (4 m x 16-bit/8 m x 8-bit) mirrorbit-tm 3.0 volt-only boot sector flash memory Datasheet

Am29LV640MT/B
Data Sheet
For new designs, S29GL064M supercedes Am29LV640MT/B and is the factory-recommended migration path for this device. Please refer to the S29GLxxxM Family Datasheet for specifications and
ordering information.
July 2003
The following document specifies Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal datasheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appropriate,
and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order
these products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Publication Number 26190 Revision C
Amendment +3 Issue Date February 12, 2004
THIS PAGE LEFT INTENTIONALLY BLANK.
For new designs, S29GL064M supercedes Am29LV640MT/B and is the factory-recommended migration path
for this device. Please refer to the S29GLxxxM Family Datasheet for specifications and ordering information.
Am29LV640MT/B
64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit™
3.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ Single power supply operation
— 3 V for read, erase, and program operations
■ Manufactured on 0.23 µm MirrorBit process
technology
■ SecSi™ (Secured Silicon) Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
■ Flexible sector architecture
— One hundred twenty-seven 32 Kword/64-Kbyte
sectors
— Eight 4 Kword/8 Kbyte boot sectors
■ Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
■ Minimum 100,000 erase cycle guarantee per sector
■ 20-year data retention at 125°C
PERFORMANCE CHARACTERISTICS
■ High performance
— 90 ns access time
— 25 ns page read times
— 0.5 s typical sector erase time
— 22 µs typical effective write buffer word programming
time: 16-word/32-byte write buffer reduces overall
programming time for multiple-word/byte updates
— 4-word/8-byte page read buffer
— 16-word/32-byte write buffer
■ Low power consumption (typical values at 3.0 V, 5
MHz)
— 30 mA typical active read current
— 50 mA typical erase/program current
— 1 µA typical standby mode current
■ Package options
— 48-pin TSOP
— 63-ball Fine-pitch BGA
— 64-ball Fortified BGA
SOFTWARE & HARDWARE FEATURES
■ Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
■ Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: VID-level method of
changing code in locked sectors
— WP#/ACC input:
Write Protect input (WP#) protects top or bottom two
sectors regardless of sector protection settings
ACC (high voltage) accelerates programming time for
higher throughput during system production
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) indicates program or
erase cycle completion
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Publication# 26190 Rev: C Amendment/+3
Issue Date: February 12, 2004
Refer to AMD’s Website (www.amd.com) for the latest information.
A D V A N C E
I N F O R M A T I O N
GENERAL DESCRIPTION
The Am29LV640MT/B is a 64 Mbit, 3.0 volt single
power supply flash memory device organized as
4,194,304 words or 8,388,608 bytes. The device has
an 8-bit/16-bit bus and can be programmed either in
the host system or in standard EPROM programmers.
An access time of 90, 100, 110, or 120 ns is available.
Note that each access time has a specific operating
voltage range (VCC) and an I/O voltage range (VIO), as
specified in the Product Selector Guide and the Ordering Information sections. The device is offered in a
48-pin TSOP, 63-ball Fine-pitch BGA or 64-ball Fortified BGA package. Each device has separate chip enable (CE#), write enable (WE#) and output enable
(OE#) controls.
Each device requires only a single 3.0 volt power
supply for both read and write functions. In addition to
a V CC input, a high-voltage accelerated program
(ACC) function provides shorter programming times
through increased current on the WP#/ACC input. This
feature is intended to facilitate factory throughput during system production, but may also be used in the
field if desired.
The device is entirely command set compatible with
the JEDEC single-power-supply Flash standard.
Commands are written to the device using standard
microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Device programming and erasure are initiated through
command sequences. Once a program or erase operation has begun, the host system need only poll the
DQ7 (Data# Polling) or DQ6 (toggle) status bits or
monitor the Ready/Busy# (RY/BY#) output to determine whether the operation is complete. To facilitate
programming, an Unlock Bypass mode reduces command sequence overhead by requiring only two write
cycles to program data instead of four.
2
Hardware data protection measures include a low
V CC detector that automatically inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of sectors of memory.
This can be achieved in-system or via programming
equipment.
The Erase Suspend/Erase Resume feature allows
the host system to pause an erase operation in a given
sector to read or program any other sector and then
complete the erase operation. The Program Suspend/Program Resume feature enables the host system to pause a program operation in a given sector to
read any other sector and then complete the program
operation.
The hardware RESET# pin terminates any operation
in progress and resets the device, after which it is then
ready for a new operation. The RESET# pin may be
tied to the system reset circuitry. A system reset would
thus also reset the device, enabling the host system to
read boot-up firmware from the Flash memory device.
The device reduces power consumption in the
standby mode when it detects specific voltage levels
on CE# and RESET#, or when addresses have been
stable for a specified period of time.
The Write Protect (WP#) feature protects the top or
bottom two sectors by asserting a logic low on the
WP#/ACC pin. The protected sector will still be protected even during accelerated programming.
The SecSi™ (Secured Silicon) Sector provides a
128-word/256-byte area for code or data that can be
permanently protected. Once this sector is protected,
no further changes within the sector can occur.
AMD MirrorBit flash technology combines years of
Flash memory manufacturing experience to produce
the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a
sector simultaneously via hot-hole assisted erase. The
data is programmed using hot electron injection.
Am29LV640MT/B
February 12, 2004
A D V A N C E
I N F O R M A T I O N
MIRRORBIT 64 MBIT DEVICE FAMILY
Device
Bus
Sector Architecture
Packages
VIO
RY/BY#
WP#, ACC
WP# Protection
x8
Uniform (64 Kbyte)
48-pin TSOP (std. & rev. pinout),
63-ball FBGA
Yes
Yes
ACC only
No WP#
LV640MT/B
x8/x16
Boot (8 x 8 Kbyte
at top & bottom)
48-pin TSOP, 63-ball Fine-pitch BGA,
64-ball Fortified BGA
No
Yes
WP#/ACC pin
2 x 8 Kbyte
top or bottom
LV640MH/L
x8/x16
Uniform (64 Kbyte)
56-pin TSOP (std. & rev. pinout),
64-ball Fortified BGA
Yes
Yes
WP#/ACC pin
1 x 64 Kbyte
high or low
LV641MH/L
x16
Uniform (32 Kword)
48-pin TSOP (std. & rev. pinout)
Yes
No
Separate WP#
and ACC pins
1 x 32 Kword
top or bottom
LV640MU
x16
Uniform (32 Kword)
64-ball Fortified BGA,
63-ball Fine-pitch BGA
Yes
Yes
ACC only
No WP#
LV065MU
RELATED DOCUMENTS
To download related documents, click on the following
links or go to www.amd.com→Flash Memory→Product Information→MirrorBit→Flash Information→Technical Documentation.
MirrorBit™ Flash Memory Write Buffer Programming
and Page Buffer Read
February 12, 2004
Implementing a Common Layout for AMD MirrorBit
and Intel StrataFlash Memory Devices
Migrating from Single-byte to Three-byte Device IDs
AMD MirrorBit™ White Paper
Am29LV640MT/B
3
A D V A N C E
I N F O R M A T I O N
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 5
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 6
Pin Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 9
Device Bus Operations . . . . . . . . . . . . . . . . . . . . 10
Table 1. Device Bus Operations .....................................................10
Word/Byte Configuration ........................................................ 10
Requirements for Reading Array Data ................................... 10
Page Mode Read .................................................................... 11
Writing Commands/Command Sequences ............................ 11
Write Buffer ............................................................................. 11
Accelerated Program Operation ............................................. 11
Autoselect Functions .............................................................. 11
Standby Mode ........................................................................ 11
Automatic Sleep Mode ........................................................... 12
RESET#: Hardware Reset Pin ............................................... 12
Output Disable Mode .............................................................. 12
Table 2. Am29LV640MT Top Boot Sector Architecture ..................12
Table 3. Am29LV640MB Bottom Boot Sector Architecture .............15
Autoselect Mode..................................................................... 18
Table 4. Autoselect Codes, (High Voltage Method) .......................18
Sector Group Protection and Unprotection ............................. 19
Table 5. Am29LV640MT Top Boot Sector Protection .....................19
Table 6. Am29LV640MB Bottom Boot Sector Protection ................19
Write Protect (WP#) ................................................................ 20
Temporary Sector Group Unprotect ....................................... 20
Figure 1. Temporary Sector Group Unprotect Operation................ 20
Figure 2. In-System Sector Group Protect/Unprotect Algorithms ... 21
SecSi (Secured Silicon) Sector Flash Memory Region .......... 22
Table 12. Command Definitions (x16 Mode, BYTE# = VIH) ............ 35
Table 13. Command Definitions (x8 Mode, BYTE# = VIL)............... 36
Write Operation Status . . . . . . . . . . . . . . . . . . . . . 37
DQ7: Data# Polling ................................................................. 37
Figure 8. Data# Polling Algorithm .................................................. 37
RY/BY#: Ready/Busy#............................................................ 38
DQ6: Toggle Bit I .................................................................... 38
Figure 9. Toggle Bit Algorithm........................................................ 39
DQ2: Toggle Bit II ................................................................... 39
Reading Toggle Bits DQ6/DQ2 ............................................... 39
DQ5: Exceeded Timing Limits ................................................ 40
DQ3: Sector Erase Timer ....................................................... 40
DQ1: Write-to-Buffer Abort ..................................................... 40
Table 14. Write Operation Status ................................................... 40
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 41
Figure 10. Maximum Negative Overshoot Waveform ................... 41
Figure 11. Maximum Positive Overshoot Waveform..................... 41
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 41
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 42
Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 12. Test Setup.................................................................... 43
Table 15. Test Specifications ......................................................... 43
Key to Switching Waveforms. . . . . . . . . . . . . . . . 43
Figure 13. Input Waveforms and
Measurement Levels...................................................................... 43
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 44
Read-Only Operations ........................................................... 44
Figure 14. Read Operation Timings ............................................... 44
Figure 15. Page Read Timings ...................................................... 45
Hardware Reset (RESET#) .................................................... 46
Figure 16. Reset Timings ............................................................... 46
Table 7. SecSi Sector Contents ......................................................22
Figure 3. SecSi Sector Protect Verify.............................................. 23
Erase and Program Operations .............................................. 47
Hardware Data Protection ...................................................... 23
Low VCC Write Inhibit ............................................................ 23
Write Pulse “Glitch” Protection ............................................... 23
Logical Inhibit .......................................................................... 23
Power-Up Write Inhibit ............................................................ 23
Common Flash Memory Interface (CFI) . . . . . . . 23
Temporary Sector Unprotect .................................................. 52
Table 9. System Interface String......................................................24
Command Definitions . . . . . . . . . . . . . . . . . . . . . 26
Reading Array Data ................................................................ 26
Reset Command ..................................................................... 27
Autoselect Command Sequence ............................................ 27
Enter SecSi Sector/Exit SecSi Sector Command Sequence .. 27
Word/Byte Program Command Sequence ............................. 27
Unlock Bypass Command Sequence ..................................... 28
Write Buffer Programming ...................................................... 28
Accelerated Program .............................................................. 29
Figure 4. Write Buffer Programming Operation............................... 30
Figure 5. Program Operation .......................................................... 31
Program Suspend/Program Resume Command Sequence ... 31
Figure 6. Program Suspend/Program Resume............................... 32
Chip Erase Command Sequence ........................................... 32
Sector Erase Command Sequence ........................................ 32
Figure 7. Erase Operation............................................................... 33
Erase Suspend/Erase Resume Commands ........................... 34
Command Definitions ............................................................. 35
4
Figure 17. Program Operation Timings..........................................
Figure 18. Accelerated Program Timing Diagram..........................
Figure 19. Chip/Sector Erase Operation Timings ..........................
Figure 20. Data# Polling Timings (During Embedded Algorithms).
Figure 21. Toggle Bit Timings (During Embedded Algorithms)......
Figure 22. DQ2 vs. DQ6.................................................................
48
48
49
50
51
51
Figure 23. Temporary Sector Group Unprotect Timing Diagram ... 52
Figure 24. Sector Group Protect and Unprotect Timing Diagram .. 53
Alternate CE# Controlled Erase and Program Operations ..... 54
Figure 25. Alternate CE# Controlled Write (Erase/Program)
Operation Timings.......................................................................... 55
Erase And Programming Performance. . . . . . . . 56
Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 56
TSOP Pin and BGA Package Capacitance . . . . . 56
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 58
TS 048—48-Pin Standard Pinout Thin Small Outline Package
(TSOP) ................................................................................... 58
FBE063—63-Ball Fine-pitch Ball Grid Array (FBGA)
12 x 11 mm Package .............................................................. 59
LAA064—64-Ball Fortified Ball Grid Array (FBGA)
13 x 11 mm Package .............................................................. 60
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 61
Am29LV640MT/B
February 12, 2004
A D V A N C E
I N F O R M A T I O N
PRODUCT SELECTOR GUIDE
Part Number
Am29LV640MT/B
VCC = 3.0–3.6 V
Speed
Option
90R
100R
VCC = 2.7–3.6 V
110R
120R
100
110
120
Max. Access Time (ns)
90
100
110
120
Max. CE# Access Time (ns)
90
100
110
120
Max. Page access time (tPACC)
25
30
30
40
30
40
Max. OE# Access Time (ns)
25
30
30
40
30
40
Note:
1.
See “AC Characteristics” for full specifications.
BLOCK DIAGRAM
DQ0–DQ15 (A-1)
RY/BY#
VCC
Sector Switches
VSS
Erase Voltage
Generator
Input/Output
Buffers
RESET#
WE#
WP#/ACC
BYTE#
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
OE#
VCC Detector
Timer
A21–A0
February 12, 2004
Am29LV640MT/B
Address Latch
STB
STB
Data
Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
5
A D V A N C E
I N F O R M A T I O N
CONNECTION DIAGRAMS
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RESET#
A21
WP#/ACC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
A8
B8
NC
NC
A7
B7
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
48-Pin Standard TSOP
63-ball Fine-pitch BGA (FBGA)
Top View, Balls Facing Down
C7
D7
E7
F7
G7
H7
J7
BYTE# DQ15/A-1
L8
M8
NC*
NC*
K7
L7
M7
VSS
NC*
NC*
A13
A12
A14
A15
A16
C6
D6
E6
F6
G6
H6
J6
K6
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
C5
D5
E5
F5
G5
H5
J5
K5
WE#
RESET#
A21
A19
DQ5
DQ12
VCC
DQ4
C4
D4
E4
F4
G4
H4
J4
K4
A18
A20
DQ2
DQ10
DQ11
DQ3
RY/BY# WP#/ACC
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
C3
D3
E3
F3
G3
H3
J3
K3
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
A2
C2
D2
E2
F2
G2
H2
J2
K2
L2
M2
NC*
A3
A4
A2
A1
A0
CE#
OE#
VSS
NC*
NC*
L1
M1
NC*
NC*
A1
B1
* Balls are shorted together via the substrate but not connected to the die.
NC*
6
NC*
Am29LV640MT/B
February 12, 2004
A D V A N C E
I N F O R M A T I O N
CONNECTION DIAGRAMS
64-Ball Fortified BGA (fBGA)
Top View, Balls Facing Down
A8
B8
C8
D8
E8
F8
G8
H8
NC
NC
NC
NC
VSS
NC
NC
NC
A7
B7
C7
D7
E7
F7
G7
H7
A13
A12
A14
A15
A16
A6
B6
C6
D6
E6
F6
VSS
G6
H6
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
A5
B5
C5
D5
E5
F5
G5
H5
WE#
RESET#
A21
A19
DQ5
DQ12
VCC
DQ4
A4
B4
C4
D4
E4
F4
G4
H4
A18
A20
DQ2
DQ10
DQ11
DQ3
RY/BY# WP#/ACC
A3
B3
C3
D3
E3
F3
G3
H3
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
A2
B2
C2
D2
E2
F2
G2
H2
A3
A4
A2
A1
A0
CE#
OE#
VSS
A1
B1
C1
D1
E1
F1
G1
H1
NC
NC
NC
NC
NC
NC
NC
NC
Special Package Handling Instructions
Special handling is required for Flash Memory products
in molded packages (TSOP and BGA). The package
February 12, 2004
BYTE# DQ15/A-1
and/or data integrity may be compromised if the
package body is exposed to temperatures above 150°C
for prolonged periods of time.
Am29LV640MT/B
7
A D V A N C E
I N F O R M A T I O N
PIN DESCRIPTION
A21–A0
LOGIC SYMBOL
= 22 Address inputs
22
DQ14–DQ0 = 15 Data inputs/outputs
A21–A0
DQ15/A-1
= DQ15 (Data input/output, word mode),
A-1 (LSB Address input, byte mode)
CE#
CE#
= Chip Enable input
OE#
OE#
= Output Enable input
WE#
WE#
= Write Enable input
WP#/ACC
WP#/ACC
= Hardware Write Protect input/Programming Acceleration input
RESET#
RESET#
= Hardware Reset Pin input
RY/BY#
= Ready/Busy output
BYTE#
= Selects 8-bit or 16-bit mode
VCC
= 3.0 volt-only single power supply
(see Product Selector Guide for
speed options and voltage
supply tolerances)
VSS
= Device Ground
NC
= Pin Not Connected Internally
8
Am29LV640MT/B
BYTE#
16 or 8
DQ15–DQ0
(A-1)
RY/BY#
February 12, 2004
A D V A N C E
I N F O R M A T I O N
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is
formed by a combination of the following:
Am29LV640M
T
120R
PC
I
TEMPERATURE RANGE
I
= Industrial (–40°C to +85°C)
PACKAGE TYPE
E
= 48-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 048)
PC = 64-Ball Fortified Ball Grid Array
1.0 mm pitch, 13 x 11 mm package (LAA064)
WH = 63-Ball Fine Pitch Ball Grid Array
0.80 mm pitch, 12 x 11 mm package (FBE063)
SPEED OPTION
See Product Selector Guide and Valid Combinations
SECTOR ARCHITECTURE AND WP# PROTECTION (WP# = VIL)
T
= Top boot sector device, top two address sectors protected
B
= Bottom boot sector device, bottom two address sectors protected
DEVICE NUMBER/DESCRIPTION
Am29LV640MT/B
64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit™ Boot Sector Flash Memory
3.0 Volt-only Read, Program, and Erase
Valid Combinations for
TSOP Package
Speed
(ns)
VCC
Range
Am29LV640MT90R,
Am29LV640MB90R
90
3.0–3.6 V
Am29LV640MT100,
Am29LV640MB100
100
Am29LV640MT110,
Am29LV640MB110
110
Am29LV640MT120,
Am29LV640MB120
EI
2.7–3.6 V
120
Am29LV640MT100R,
Am29LV640MB100R
100
Am29LV640MT110R,
Am29LV640MB110R
110
Am29LV640MT120R,
Am29LV640MB120R
120
3.0–3.6 V
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm
availability of specific valid combinations and to check on newly released combinations.
February 12, 2004
Valid Combinations for
BGA Packages
Order Number
Package Marking
WHI L640MT90RI
Am29LV640MT90R
PCI L640MT90NI
WHI L640MB90RI
Am29LV640MB90R
PCI L640MB90NI
WHI L640MT10VI
Am29LV640MT100
PCI L640MT10PI
WHI L640MB10VI
Am29LV640MB100
PCI L640MB10PI
WHI L640MT11VI
Am29LV640MT110
PCI L640MT11PI
WHI L640MB11VI
Am29LV640MB110
PCI L640MB11PI
WHI L640MT12VI
Am29LV640MT120
PCI L640MT12PI
WHI L640MB12VI
Am29LV640MB120
PCI L640MB12PI
WHI L640MT10RI
Am29LV640MT100R
PCI L640MT10NI
WHI L640MB10RI
Am29LV640MB100R
PCI L640MB10NI
WHI L640MT11RI
Am29LV640MT110R
PCI L640MT11NI
WHI L640MB11RI
Am29LV640MB110R
PCI L640MB11NI
WHI L640MT12RI
Am29LV640MT120R
PCI L640MT12NI
WHI L640MB12RI
Am29LV640MB120R
PCI L640MB12NI
Am29LV640MT/B
Speed
(ns)
VCC
Range
90
3.0–
3.6 V
100
110
2.7–
3.6 V
120
100
110
3.0–
3.6 V
120
9
A D V A N C E
I N F O R M A T I O N
DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information
needed to execute the command. The contents of the
Table 1.
register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the
device. Table 1 lists the device bus operations, the inputs and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.
Device Bus Operations
DQ8–DQ15
CE#
OE#
WE#
RESET#
WP#
ACC
Addresses
(Note 2)
DQ0–
DQ7
BYTE#
= VIH
Read
L
L
H
H
X
X
AIN
DOUT
DOUT
Write (Program/Erase)
L
H
L
H
(Note 3)
X
AIN
(Note 4) (Note 4)
Accelerated Program
L
H
L
H
(Note 3)
VHH
AIN
(Note 4) (Note 4)
VCC ±
0.3 V
X
X
VCC ±
0.3 V
X
H
X
High-Z
High-Z
High-Z
Output Disable
L
H
H
H
X
X
X
High-Z
High-Z
High-Z
Reset
X
X
X
L
X
X
X
High-Z
High-Z
High-Z
Sector Group Protect
(Note 2)
L
H
L
VID
H
X
SA, A6 =L,
A3=L, A2=L,
A1=H, A0=L
(Note 4)
X
X
Sector Group Unprotect
(Note 2)
L
H
L
VID
H
X
SA, A6=H,
A3=L, A2=L,
A1=H, A0=L
(Note 4)
X
X
Temporary Sector Group
Unprotect
X
X
X
VID
H
X
AIN
Operation
Standby
(Note 4) (Note 4)
BYTE#
= VIL
DQ8–DQ14
= High-Z,
DQ15 = A-1
High-Z
Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 11.5–12.5 V, VHH = 11.5–12.5 V, X = Don’t Care, SA = Sector Address,
AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Addresses are A21:A0 in word mode; A21:A-1 in byte mode. Sector addresses are A21:A12 in both modes.
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector Group
Protection and Unprotection” section.
3. If WP# = VIL, the first or last sector remains protected. If WP# = VIH, the top two or bottom two sectors will be protected or
unprotected as determined by the method described in “Sector Group Protection and Unprotection”. All sectors are unprotected
when shipped from the factory (The SecSi Sector may be factory protected depending on version ordered.)
4. DIN or DOUT as required by command sequence, data polling, or sector protect algorithm (see Figure 2).
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O
pins operate in the byte or word configuration. If the
BYTE# pin is set at logic ‘1’, the device is in word configuration, DQ0–DQ15 are active and controlled by
CE# and OE#.
If the BYTE# pin is set at logic ‘0’, the device is in byte
configuration, and only data I/O pins DQ0–DQ7 are
active and controlled by CE# and OE#. The data I/O
10
pins DQ8–DQ14 are tri-stated, and the DQ15 pin is
used as an input for the LSB (A-1) address function.
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output control and gates array data to the output pins. WE#
should remain at VIH.
Am29LV640MT/B
February 12, 2004
A D V A N C E
I N F O R M A T I O N
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No command is necessary in this mode to obtain array data.
Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid
data on the device data outputs. The device remains
enabled for read access until the command register
contents are altered.
See “Reading Array Data” for more information. Refer
to the AC Read-Only Operations table for timing specifications and to Figure 14 for the timing diagram. Refer
to the DC Characteristics table for the active current
specification on reading array data.
Page Mode Read
The device is capable of fast page mode read and is
compatible with the page mode Mask ROM read operation. This mode provides faster read access speed
for random locations within a page. The page size of
the device is 4 words/8 bytes. The appropriate page is
selected by the higher address bits A(max)–A2. Address bits A1–A0 in word mode (A1–A-1 in byte mode)
determine the specific word within a page. This is an
asynchronous operation; the microprocessor supplies
the specific word location.
The random or initial page access is equal to tACC or
tCE and subsequent page read accesses (as long as
the locations specified by the microprocessor falls
within that page) is equivalent to tPACC. When CE# is
deasserted and reasserted for a subsequent access,
the access time is t ACC or t CE . Fast page mode accesses are obtained by keeping the “read-page addresses” constant and changing the “intra-read page”
addresses.
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four. The
“Word/Byte Program Command Sequence” section
has details on programming data to the device using
both standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Tables 3 and 2 indicates the
address space that each sector occupies.
Refer to the DC Characteristics table for the active
current specification for the write mode. The AC Char-
February 12, 2004
acteristics section contains timing specification tables
and timing diagrams for write operations.
Write Buffer
Write Buffer Programming allows the system to write a
maximum of 16 words/32 bytes in one programming
operation. This results in faster effective programming
time than the standard programming algorithms. See
“Write Buffer” for more information.
Accelerated Program Operation
The device offers accelerated program operations
through the ACC function. This is one of two functions
provided by the WP#/ACC pin. This function is primarily intended to allow faster manufacturing throughput
at the factory.
If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass
mode, temporarily unprotects any protected sectors,
and uses the higher voltage on the pin to reduce the
time required for program operations. The system
would use a two-cycle program command sequence
as required by the Unlock Bypass mode. Removing
VHH from the WP#/ACC pin returns the device to normal operation. Note that the WP#/ACC pin must not be
at VHH for operations other than accelerated programming, or device damage may result. In addition, no external pullup is necessary since the WP#/ACC pin has
internal pullup to VCC.
Autoselect Functions
If the system writes the autoselect command sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in
this mode. Refer to the Autoselect Mode and Autoselect Command Sequence sections for more information.
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
and the outputs are placed in the high impedance
state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at VCC ± 0.3 V.
(Note that this is a more restricted voltage range than
VIH.) If CE# and RESET# are held at VIH, but not within
VCC ± 0.3 V, the device will be in the standby mode,
but the standby current will be greater. The device requires standard access time (t CE ) for read access
when the device is in either of these standby modes,
before it is ready to read data.
Am29LV640MT/B
11
A D V A N C E
I N F O R M A T I O N
If the device is deselected during erasure or programming, the device draws active current until the
operation is completed.
Refer to the DC Characteristics table for the standby
current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables
this mode when addresses remain stable for t ACC +
30 ns. The automatic sleep mode is independent of
the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output
data is latched and always available to the system.
Refer to the DC Characteristics table for the automatic
sleep mode current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the
device immediately terminates any operation in
progress, tristates all output pins, and ignores all
Table 2.
12
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is
ready to accept another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VSS±0.3 V, the device
draws CMOS standby current (ICC4). If RESET# is held
at VIL but not within VSS±0.3 V, the standby current will
be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firmware from the Flash memory.
Refer to the AC Characteristics tables for RESET# parameters and to Figure 16 for the timing diagram.
Output Disable Mode
When the OE# input is at VIH, output from the device is
disabled. The output pins are placed in the high
impedance state.
Am29LV640MT Top Boot Sector Architecture
Sector
Sector Address
A21–A12
Sector Size
(Kbytes/Kwords)
(x8)
Address Range
(x16)
Address Range
SA0
0000000xxx
64/32
000000h–00FFFFh
00000h–07FFFh
SA1
0000001xxx
64/32
010000h–01FFFFh
08000h–0FFFFh
SA2
0000010xxx
64/32
020000h–02FFFFh
10000h–17FFFh
SA3
0000011xxx
64/32
030000h–03FFFFh
18000h–1FFFFh
SA4
0000100xxx
64/32
040000h–04FFFFh
20000h–27FFFh
SA5
0000101xxx
64/32
050000h–05FFFFh
28000h–2FFFFh
SA6
0000110xxx
64/32
060000h–06FFFFh
30000h–37FFFh
SA7
0000111xxx
64/32
070000h–07FFFFh
38000h–3FFFFh
SA8
0001000xxx
64/32
080000h–08FFFFh
40000h–47FFFh
SA9
0001001xxx
64/32
090000h–09FFFFh
48000h–4FFFFh
SA10
0001010xxx
64/32
0A0000h–0AFFFFh
50000h–57FFFh
SA11
0001011xxx
64/32
0B0000h–0BFFFFh
58000h–5FFFFh
SA12
0001100xxx
64/32
0C0000h–0CFFFFh
60000h–67FFFh
SA13
0001101xxx
64/32
0D0000h–0DFFFFh
68000h–6FFFFh
SA14
0001101xxx
64/32
0E0000h–0EFFFFh
70000h–77FFFh
SA15
0001111xxx
64/32
0F0000h–0FFFFFh
78000h–7FFFFh
SA16
0010000xxx
64/32
100000h–00FFFFh
80000h–87FFFh
SA17
0010001xxx
64/32
110000h–11FFFFh
88000h–8FFFFh
SA18
0010010xxx
64/32
120000h–12FFFFh
90000h–97FFFh
SA19
0010011xxx
64/32
130000h–13FFFFh
98000h–9FFFFh
SA20
0010100xxx
64/32
140000h–14FFFFh
A0000h–A7FFFh
SA21
0010101xxx
64/32
150000h–15FFFFh
A8000h–AFFFFh
SA22
0010110xxx
64/32
160000h–16FFFFh
B0000h–B7FFFh
SA23
0010111xxx
64/32
170000h–17FFFFh
B8000h–BFFFFh
SA24
0011000xxx
64/32
180000h–18FFFFh
C0000h–C7FFFh
SA25
0011001xxx
64/32
190000h–19FFFFh
C8000h–CFFFFh
SA26
0011010xxx
64/32
1A0000h–1AFFFFh
D0000h–D7FFFh
SA27
0011011xxx
64/32
1B0000h–1BFFFFh
D8000h–DFFFFh
Am29LV640MT/B
February 12, 2004
A D V A N C E
Table 2.
I N F O R M A T I O N
Am29LV640MT Top Boot Sector Architecture (Continued)
Sector
Sector Address
A21–A12
Sector Size
(Kbytes/Kwords)
(x8)
Address Range
(x16)
Address Range
SA28
0011000xxx
64/32
1C0000h–1CFFFFh
E0000h–E7FFFh
SA29
0011101xxx
64/32
1D0000h–1DFFFFh
E8000h–EFFFFh
SA30
0011110xxx
64/32
1E0000h–1EFFFFh
F0000h–F7FFFh
SA31
0011111xxx
64/32
1F0000h–1FFFFFh
F8000h–FFFFFh
SA32
0100000xxx
64/32
200000h–20FFFFh
F9000h–107FFFh
SA33
0100001xxx
64/32
210000h–21FFFFh
108000h–10FFFFh
SA34
0100010xxx
64/32
220000h–22FFFFh
110000h–117FFFh
SA35
0101011xxx
64/32
230000h–23FFFFh
118000h–11FFFFh
SA36
0100100xxx
64/32
240000h–24FFFFh
120000h–127FFFh
SA37
0100101xxx
64/32
250000h–25FFFFh
128000h–12FFFFh
SA38
0100110xxx
64/32
260000h–26FFFFh
130000h–137FFFh
SA39
0100111xxx
64/32
270000h–27FFFFh
138000h–13FFFFh
SA40
0101000xxx
64/32
280000h–28FFFFh
140000h–147FFFh
SA41
0101001xxx
64/32
290000h–29FFFFh
148000h–14FFFFh
SA42
0101010xxx
64/32
2A0000h–2AFFFFh
150000h–157FFFh
SA43
0101011xxx
64/32
2B0000h–2BFFFFh
158000h–15FFFFh
SA44
0101100xxx
64/32
2C0000h–2CFFFFh
160000h–167FFFh
SA45
0101101xxx
64/32
2D0000h–2DFFFFh
168000h–16FFFFh
SA46
0101110xxx
64/32
2E0000h–2EFFFFh
170000h–177FFFh
SA47
0101111xxx
64/32
2F0000h–2FFFFFh
178000h–17FFFFh
SA48
0110000xxx
64/32
300000h–30FFFFh
180000h–187FFFh
SA49
0110001xxx
64/32
310000h–31FFFFh
188000h–18FFFFh
SA50
0110010xxx
64/32
320000h–32FFFFh
190000h–197FFFh
SA51
0110011xxx
64/32
330000h–33FFFFh
198000h–19FFFFh
SA52
0100100xxx
64/32
340000h–34FFFFh
1A0000h–1A7FFFh
SA53
0110101xxx
64/32
350000h–35FFFFh
1A8000h–1AFFFFh
SA54
0110110xxx
64/32
360000h–36FFFFh
1B0000h–1B7FFFh
SA55
0110111xxx
64/32
370000h–37FFFFh
1B8000h–1BFFFFh
SA56
0111000xxx
64/32
380000h–38FFFFh
1C0000h–1C7FFFh
SA57
0111001xxx
64/32
390000h–39FFFFh
1C8000h–1CFFFFh
SA58
0111010xxx
64/32
3A0000h–3AFFFFh
1D0000h–1D7FFFh
SA59
0111011xxx
64/32
3B0000h–3BFFFFh
1D8000h–1DFFFFh
SA60
0111100xxx
64/32
3C0000h–3CFFFFh
1E0000h–1E7FFFh
SA61
0111101xxx
64/32
3D0000h–3DFFFFh
1E8000h–1EFFFFh
SA62
0111110xxx
64/32
3E0000h–3EFFFFh
1F0000h–1F7FFFh
SA63
0111111xxx
64/32
3F0000h–3FFFFFh
1F8000h–1FFFFFh
SA64
1000000xxx
64/32
400000h–40FFFFh
200000h–207FFFh
SA65
1000001xxx
64/32
410000h–41FFFFh
208000h–20FFFFh
SA66
1000010xxx
64/32
420000h–42FFFFh
210000h–217FFFh
SA67
1000011xxx
64/32
430000h–43FFFFh
218000h–21FFFFh
SA68
1000100xxx
64/32
440000h–44FFFFh
220000h–227FFFh
SA69
1000101xxx
64/32
450000h–45FFFFh
228000h–22FFFFh
SA70
1000110xxx
64/32
460000h–46FFFFh
230000h–237FFFh
SA71
1000111xxx
64/32
470000h–47FFFFh
238000h–23FFFFh
SA72
1001000xxx
64/32
480000h–48FFFFh
240000h–247FFFh
SA73
1001001xxx
64/32
490000h–49FFFFh
248000h–24FFFFh
SA74
1001010xxx
64/32
4A0000h–4AFFFFh
250000h–257FFFh
SA75
1001011xxx
64/32
4B0000h–4BFFFFh
258000h–25FFFFh
SA76
1001100xxx
64/32
4C0000h–4CFFFFh
260000h–267FFFh
SA77
1001101xxx
64/32
4D0000h–4DFFFFh
268000h–26FFFFh
SA78
1001110xxx
64/32
4E0000h–4EFFFFh
270000h–277FFFh
SA79
1001111xxx
64/32
4F0000h–4FFFFFh
278000h–27FFFFh
SA80
1010000xxx
64/32
500000h–50FFFFh
280000h–28FFFFh
SA81
1010001xxx
64/32
510000h–51FFFFh
288000h–28FFFFh
SA82
1010010xxx
64/32
520000h–52FFFFh
290000h–297FFFh
February 12, 2004
Am29LV640MT/B
13
A D V A N C E
Table 2.
14
I N F O R M A T I O N
Am29LV640MT Top Boot Sector Architecture (Continued)
Sector
Sector Address
A21–A12
Sector Size
(Kbytes/Kwords)
(x8)
Address Range
(x16)
Address Range
SA83
1010011xxx
64/32
530000h–53FFFFh
298000h–29FFFFh
SA84
1010100xxx
64/32
540000h–54FFFFh
2A0000h–2A7FFFh
SA85
1010101xxx
64/32
550000h–55FFFFh
2A8000h–2AFFFFh
SA86
1010110xxx
64/32
560000h–56FFFFh
2B0000h–2B7FFFh
SA87
1010111xxx
64/32
570000h–57FFFFh
2B8000h–2BFFFFh
SA88
1011000xxx
64/32
580000h–58FFFFh
2C0000h–2C7FFFh
SA89
1011001xxx
64/32
590000h–59FFFFh
2C8000h–2CFFFFh
SA90
1011010xxx
64/32
5A0000h–5AFFFFh
2D0000h–2D7FFFh
SA91
1011011xxx
64/32
5B0000h–5BFFFFh
2D8000h–2DFFFFh
SA92
1011100xxx
64/32
5C0000h–5CFFFFh
2E0000h–2E7FFFh
SA93
1011101xxx
64/32
5D0000h–5DFFFFh
2E8000h–2EFFFFh
SA94
1011110xxx
64/32
5E0000h–5EFFFFh
2F0000h–2FFFFFh
SA95
1011111xxx
64/32
5F0000h–5FFFFFh
2F8000h–2FFFFFh
SA96
1100000xxx
64/32
600000h–60FFFFh
300000h–307FFFh
SA97
1100001xxx
64/32
610000h–61FFFFh
308000h–30FFFFh
SA98
1100010xxx
64/32
620000h–62FFFFh
310000h–317FFFh
SA99
1100011xxx
64/32
630000h–63FFFFh
318000h–31FFFFh
SA100
1100100xxx
64/32
640000h–64FFFFh
320000h–327FFFh
SA101
1100101xxx
64/32
650000h–65FFFFh
328000h–32FFFFh
SA102
1100110xxx
64/32
660000h–66FFFFh
330000h–337FFFh
SA103
1100111xxx
64/32
670000h–67FFFFh
338000h–33FFFFh
SA104
1101000xxx
64/32
680000h–68FFFFh
340000h–347FFFh
SA105
1101001xxx
64/32
690000h–69FFFFh
348000h–34FFFFh
SA106
1101010xxx
64/32
6A0000h–6AFFFFh
350000h–357FFFh
SA107
1101011xxx
64/32
6B0000h–6BFFFFh
358000h–35FFFFh
SA108
1101100xxx
64/32
6C0000h–6CFFFFh
360000h–367FFFh
SA109
1101101xxx
64/32
6D0000h–6DFFFFh
368000h–36FFFFh
SA110
1101110xxx
64/32
6E0000h–6EFFFFh
370000h–377FFFh
SA111
1101111xxx
64/32
6F0000h–6FFFFFh
378000h–37FFFFh
SA112
1110000xxx
64/32
700000h–70FFFFh
380000h–387FFFh
SA113
1110001xxx
64/32
710000h–71FFFFh
388000h–38FFFFh
SA114
1110010xxx
64/32
720000h–72FFFFh
390000h–397FFFh
SA115
1110011xxx
64/32
730000h–73FFFFh
398000h–39FFFFh
SA116
1110100xxx
64/32
740000h–74FFFFh
3A0000h–3A7FFFh
SA117
1110101xxx
64/32
750000h–75FFFFh
3A8000h–3AFFFFh
SA118
1110110xxx
64/32
760000h–76FFFFh
3B0000h–3B7FFFh
SA119
1110111xxx
64/32
770000h–77FFFFh
3B8000h–3BFFFFh
SA120
1111000xxx
64/32
780000h–78FFFFh
3C0000h–3C7FFFh
SA121
1111001xxx
64/32
790000h–79FFFFh
3C8000h–3CFFFFh
SA122
1111010xxx
64/32
7A0000h–7AFFFFh
3D0000h–3D7FFFh
SA123
1111011xxx
64/32
7B0000h–7BFFFFh
3D8000h–3DFFFFh
SA124
1111100xxx
64/32
7C0000h–7CFFFFh
3E0000h–3E7FFFh
SA125
1111101xxx
64/32
7D0000h–7DFFFFh
3E8000h–3EFFFFh
SA126
1111110xxx
64/32
7E0000h–7EFFFFh
3F0000h–3F7FFFh
SA127
1111111000
8/4
7F0000h–7F1FFFh
3F8000h–3F8FFFh
SA128
1111111001
8/4
7F2000h–7F3FFFh
3F9000h–3F9FFFh
SA129
1111111010
8/4
7F4000h–7F5FFFh
3FA000h–3FAFFFh
SA130
1111111011
8/4
7F6000h–7F7FFFh
3FB000h–3FBFFFh
SA131
1111111100
8/4
7F8000h–7F9FFFh
3FC000h–3FCFFFh
SA132
1111111101
8/4
7FA000h–7FBFFFh
3FD000h–3FDFFFh
SA133
1111111110
8/4
7FC000h–7FDFFFh
3FE000h–3FEFFFh
SA134
1111111111
8/4
7FE000h–7FFFFFh
3FF000h–3FFFFFh
Am29LV640MT/B
February 12, 2004
A D V A N C E
Table 3.
I N F O R M A T I O N
Am29LV640MB Bottom Boot Sector Architecture
Sector
Sector Address
A21–A12
Sector Size
(Kbytes/Kwords)
(x8)
Address Range
(x16)
Address Range
SA0
0000000000
8/4
000000h–001FFFh
00000h–00FFFh
SA1
0000000001
8/4
002000h–003FFFh
01000h–01FFFh
SA2
0000000010
8/4
004000h–005FFFh
02000h–02FFFh
SA3
0000000011
8/4
006000h–007FFFh
03000h–03FFFh
SA4
0000000100
8/4
008000h–009FFFh
04000h–04FFFh
SA5
0000000101
8/4
00A000h–00BFFFh
05000h–05FFFh
SA6
0000000110
8/4
00C000h–00DFFFh
06000h–06FFFh
SA7
0000000111
8/4
00E000h–00FFFFFh
07000h–07FFFh
SA8
0000001xxx
64/32
010000h–01FFFFh
08000h–0FFFFh
SA9
0000010xxx
64/32
020000h–02FFFFh
10000h–17FFFh
SA10
0000011xxx
64/32
030000h–03FFFFh
18000h–1FFFFh
SA11
0000100xxx
64/32
040000h–04FFFFh
20000h–27FFFh
SA12
0000101xxx
64/32
050000h–05FFFFh
28000h–2FFFFh
SA13
0000110xxx
64/32
060000h–06FFFFh
30000h–37FFFh
SA14
0000111xxx
64/32
070000h–07FFFFh
38000h–3FFFFh
SA15
0001000xxx
64/32
080000h–08FFFFh
40000h–47FFFh
SA16
0001001xxx
64/32
090000h–09FFFFh
48000h–4FFFFh
SA17
0001010xxx
64/32
0A0000h–0AFFFFh
50000h–57FFFh
SA18
0001011xxx
64/32
0B0000h–0BFFFFh
58000h–5FFFFh
SA19
0001100xxx
64/32
0C0000h–0CFFFFh
60000h–67FFFh
SA20
0001101xxx
64/32
0D0000h–0DFFFFh
68000h–6FFFFh
SA21
0001101xxx
64/32
0E0000h–0EFFFFh
70000h–77FFFh
SA22
0001111xxx
64/32
0F0000h–0FFFFFh
78000h–7FFFFh
SA23
0010000xxx
64/32
100000h–00FFFFh
80000h–87FFFh
SA24
0010001xxx
64/32
110000h–11FFFFh
88000h–8FFFFh
SA25
0010010xxx
64/32
120000h–12FFFFh
90000h–97FFFh
SA26
0010011xxx
64/32
130000h–13FFFFh
98000h–9FFFFh
SA27
0010100xxx
64/32
140000h–14FFFFh
A0000h–A7FFFh
SA28
0010101xxx
64/32
150000h–15FFFFh
A8000h–AFFFFh
SA29
0010110xxx
64/32
160000h–16FFFFh
B0000h–B7FFFh
SA30
0010111xxx
64/32
170000h–17FFFFh
B8000h–BFFFFh
SA31
0011000xxx
64/32
180000h–18FFFFh
C0000h–C7FFFh
SA32
0011001xxx
64/32
190000h–19FFFFh
C8000h–CFFFFh
SA33
0011010xxx
64/32
1A0000h–1AFFFFh
D0000h–D7FFFh
SA34
0011011xxx
64/32
1B0000h–1BFFFFh
D8000h–DFFFFh
SA35
0011000xxx
64/32
1C0000h–1CFFFFh
E0000h–E7FFFh
SA36
0011101xxx
64/32
1D0000h–1DFFFFh
E8000h–EFFFFh
SA37
0011110xxx
64/32
1E0000h–1EFFFFh
F0000h–F7FFFh
SA38
0011111xxx
64/32
1F0000h–1FFFFFh
F8000h–FFFFFh
SA39
0100000xxx
64/32
200000h–20FFFFh
F9000h–107FFFh
SA40
0100001xxx
64/32
210000h–21FFFFh
108000h–10FFFFh
SA41
0100010xxx
64/32
220000h–22FFFFh
110000h–117FFFh
SA42
0101011xxx
64/32
230000h–23FFFFh
118000h–11FFFFh
SA43
0100100xxx
64/32
240000h–24FFFFh
120000h–127FFFh
SA44
0100101xxx
64/32
250000h–25FFFFh
128000h–12FFFFh
SA45
0100110xxx
64/32
260000h–26FFFFh
130000h–137FFFh
SA46
0100111xxx
64/32
270000h–27FFFFh
138000h–13FFFFh
SA47
0101000xxx
64/32
280000h–28FFFFh
140000h–147FFFh
SA48
0101001xxx
64/32
290000h–29FFFFh
148000h–14FFFFh
SA49
0101010xxx
64/32
2A0000h–2AFFFFh
150000h–157FFFh
SA50
0101011xxx
64/32
2B0000h–2BFFFFh
158000h–15FFFFh
SA51
0101100xxx
64/32
2C0000h–2CFFFFh
160000h–167FFFh
SA52
0101101xxx
64/32
2D0000h–2DFFFFh
168000h–16FFFFh
SA53
0101110xxx
64/32
2E0000h–2EFFFFh
170000h–177FFFh
February 12, 2004
Am29LV640MT/B
15
A D V A N C E
Table 3.
16
I N F O R M A T I O N
Am29LV640MB Bottom Boot Sector Architecture (Continued)
Sector
Sector Address
A21–A12
Sector Size
(Kbytes/Kwords)
(x8)
Address Range
(x16)
Address Range
SA54
0101111xxx
64/32
2F0000h–2FFFFFh
178000h–17FFFFh
SA55
0110000xxx
64/32
300000h–30FFFFh
180000h–187FFFh
SA56
0110001xxx
64/32
310000h–31FFFFh
188000h–18FFFFh
SA57
0110010xxx
64/32
320000h–32FFFFh
190000h–197FFFh
SA58
0110011xxx
64/32
330000h–33FFFFh
198000h–19FFFFh
SA59
0100100xxx
64/32
340000h–34FFFFh
1A0000h–1A7FFFh
SA60
0110101xxx
64/32
350000h–35FFFFh
1A8000h–1AFFFFh
SA61
0110110xxx
64/32
360000h–36FFFFh
1B0000h–1B7FFFh
SA62
0110111xxx
64/32
370000h–37FFFFh
1B8000h–1BFFFFh
SA63
0111000xxx
64/32
380000h–38FFFFh
1C0000h–1C7FFFh
SA64
0111001xxx
64/32
390000h–39FFFFh
1C8000h–1CFFFFh
SA65
0111010xxx
64/32
3A0000h–3AFFFFh
1D0000h–1D7FFFh
SA66
0111011xxx
64/32
3B0000h–3BFFFFh
1D8000h–1DFFFFh
SA67
0111100xxx
64/32
3C0000h–3CFFFFh
1E0000h–1E7FFFh
SA68
0111101xxx
64/32
3D0000h–3DFFFFh
1E8000h–1EFFFFh
SA69
0111110xxx
64/32
3E0000h–3EFFFFh
1F0000h–1F7FFFh
SA70
0111111xxx
64/32
3F0000h–3FFFFFh
1F8000h–1FFFFFh
SA71
1000000xxx
64/32
400000h–40FFFFh
200000h–207FFFh
SA72
1000001xxx
64/32
410000h–41FFFFh
208000h–20FFFFh
SA73
1000010xxx
64/32
420000h–42FFFFh
210000h–217FFFh
SA74
1000011xxx
64/32
430000h–43FFFFh
218000h–21FFFFh
SA75
1000100xxx
64/32
440000h–44FFFFh
220000h–227FFFh
SA76
1000101xxx
64/32
450000h–45FFFFh
228000h–22FFFFh
SA77
1000110xxx
64/32
460000h–46FFFFh
230000h–237FFFh
SA78
1000111xxx
64/32
470000h–47FFFFh
238000h–23FFFFh
SA79
1001000xxx
64/32
480000h–48FFFFh
240000h–247FFFh
SA80
1001001xxx
64/32
490000h–49FFFFh
248000h–24FFFFh
SA81
1001010xxx
64/32
4A0000h–4AFFFFh
250000h–257FFFh
SA82
1001011xxx
64/32
4B0000h–4BFFFFh
258000h–25FFFFh
SA83
1001100xxx
64/32
4C0000h–4CFFFFh
260000h–267FFFh
SA84
1001101xxx
64/32
4D0000h–4DFFFFh
268000h–26FFFFh
SA85
1001110xxx
64/32
4E0000h–4EFFFFh
270000h–277FFFh
SA86
1001111xxx
64/32
4F0000h–4FFFFFh
278000h–27FFFFh
SA87
1010000xxx
64/32
500000h–50FFFFh
280000h–28FFFFh
SA88
1010001xxx
64/32
510000h–51FFFFh
288000h–28FFFFh
SA89
1010010xxx
64/32
520000h–52FFFFh
290000h–297FFFh
SA90
1010011xxx
64/32
530000h–53FFFFh
298000h–29FFFFh
SA91
1010100xxx
64/32
540000h–54FFFFh
2A0000h–2A7FFFh
SA92
1010101xxx
64/32
550000h–55FFFFh
2A8000h–2AFFFFh
SA93
1010110xxx
64/32
560000h–56FFFFh
2B0000h–2B7FFFh
SA94
1010111xxx
64/32
570000h–57FFFFh
2B8000h–2BFFFFh
SA95
1011000xxx
64/32
580000h–58FFFFh
2C0000h–2C7FFFh
SA96
1011001xxx
64/32
590000h–59FFFFh
2C8000h–2CFFFFh
SA97
1011010xxx
64/32
5A0000h–5AFFFFh
2D0000h–2D7FFFh
SA98
1011011xxx
64/32
5B0000h–5BFFFFh
2D8000h–2DFFFFh
SA99
1011100xxx
64/32
5C0000h–5CFFFFh
2E0000h–2E7FFFh
SA100
1011101xxx
64/32
5D0000h–5DFFFFh
2E8000h–2EFFFFh
SA101
1011110xxx
64/32
5E0000h–5EFFFFh
2F0000h–2FFFFFh
SA102
1011111xxx
64/32
5F0000h–5FFFFFh
2F8000h–2FFFFFh
SA103
1100000xxx
64/32
600000h–60FFFFh
300000h–307FFFh
SA104
1100001xxx
64/32
610000h–61FFFFh
308000h–30FFFFh
SA105
1100010xxx
64/32
620000h–62FFFFh
310000h–317FFFh
SA106
1100011xxx
64/32
630000h–63FFFFh
318000h–31FFFFh
SA107
1100100xxx
64/32
640000h–64FFFFh
320000h–327FFFh
SA108
1100101xxx
64/32
650000h–65FFFFh
328000h–32FFFFh
Am29LV640MT/B
February 12, 2004
A D V A N C E
Table 3.
I N F O R M A T I O N
Am29LV640MB Bottom Boot Sector Architecture (Continued)
Sector
Sector Address
A21–A12
Sector Size
(Kbytes/Kwords)
(x8)
Address Range
(x16)
Address Range
SA109
1100110xxx
64/32
660000h–66FFFFh
330000h–337FFFh
SA110
1100111xxx
64/32
670000h–67FFFFh
338000h–33FFFFh
SA111
1101000xxx
64/32
680000h–68FFFFh
340000h–347FFFh
SA112
1101001xxx
64/32
690000h–69FFFFh
348000h–34FFFFh
SA113
1101010xxx
64/32
6A0000h–6AFFFFh
350000h–357FFFh
SA114
1101011xxx
64/32
6B0000h–6BFFFFh
358000h–35FFFFh
SA115
1101100xxx
64/32
6C0000h–6CFFFFh
360000h–367FFFh
SA116
1101101xxx
64/32
6D0000h–6DFFFFh
368000h–36FFFFh
SA117
1101110xxx
64/32
6E0000h–6EFFFFh
370000h–377FFFh
SA118
1101111xxx
64/32
6F0000h–6FFFFFh
378000h–37FFFFh
SA119
1110000xxx
64/32
700000h–70FFFFh
380000h–387FFFh
SA120
1110001xxx
64/32
710000h–71FFFFh
388000h–38FFFFh
SA121
1110010xxx
64/32
720000h–72FFFFh
390000h–397FFFh
SA122
1110011xxx
64/32
730000h–73FFFFh
398000h–39FFFFh
SA123
1110100xxx
64/32
740000h–74FFFFh
3A0000h–3A7FFFh
SA124
1110101xxx
64/32
750000h–75FFFFh
3A8000h–3AFFFFh
SA125
1110110xxx
64/32
760000h–76FFFFh
3B0000h–3B7FFFh
SA126
1110111xxx
64/32
770000h–77FFFFh
3B8000h–3BFFFFh
SA127
1111000xxx
64/32
780000h–78FFFFh
3C0000h–3C7FFFh
SA128
1111001xxx
64/32
790000h–79FFFFh
3C8000h–3CFFFFh
SA129
1111010xxx
64/32
7A0000h–7AFFFFh
3D0000h–3D7FFFh
SA130
1111011xxx
64/32
7B0000h–7BFFFFh
3D8000h–3DFFFFh
SA131
1111100xxx
64/32
7C0000h–7CFFFFh
3E0000h–3E7FFFh
SA132
1111101xxx
64/32
7D0000h–7DFFFFh
3E8000h–3EFFFFh
SA133
1111110xxx
64/32
7E0000h–7EFFFFh
3F0000h–3F7FFFh
SA134
1111111000
64/32
7F0000h–7FFFFFh
3F8000h–3FFFFFh
Note: The address range is A21:A-1 in byte mode (BYTE# = VIL) or A21:A0 in word mode (BYTE# = VIH)
February 12, 2004
Am29LV640MT/B
17
A D V A N C E
I N F O R M A T I O N
Autoselect Mode
In addition, when verifying sector protection, the sector
address must appear on the appropriate highest order
address bits (see Tables 2 and 3). Table 4 shows the
remaining address bits that are don’t care. When all
necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on DQ7–DQ0.
The autoselect mode provides manufacturer and device identification, and sector protection verification,
through identifier codes output on DQ7–DQ0. This
mode is primarily intended for programming equipment to automatically match a device to be programmed with its c orresponding programm ing
algorithm. However, the autoselect codes can also be
accessed in-system through the command register.
To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in Tables 12 and 13. This
method does not require VID. Refer to the Autoselect
Command Sequence section for more information.
When using programming equipment, the autoselect
mode requires V ID on address pin A9. Address pins
A6, A3, A2, A1, and A0 must be as shown in Table 4.
Table 4.
Description
CE#
Manufacturer ID: AMD
L
OE# WE#
L
H
Autoselect Codes, (High Voltage Method)
A21 A14
to
to
A15 A10
X
X
A8
to
A7
A6
A5
to
A4
A3
to
A2
A1
A0
VID
X
L
X
L
L
L
00
X
01h
L
L
H
22
X
7Eh
H
H
L
22
X
10h
H
H
H
22
X
00 (bottom boot)
01h (top boot)
Device ID
Cycle 1
Cycle 2
L
L
H
X
X
DQ8 to DQ15
A9
VID
X
L
X
Cycle 3
BYTE# BYTE#
= VIH
= VIL
DQ7 to DQ0
Sector Protection
Verification
L
L
H
SA
X
VID
X
L
X
L
H
L
X
X
01h (protected),
00h (unprotected)
SecSi Sector Indicator
Bit (DQ7), WP#
protects top two
address sector
L
L
H
X
X
VID
X
L
X
L
H
H
X
X
98h (factory locked),
18h (not factory locked)
SecSi Sector Indicator
Bit (DQ7), WP#
protects bottom two
address sector
L
L
H
X
X
VID
X
L
X
L
H
H
X
X
88h (factory locked),
08h (not factory locked)
Legend: L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.
18
Am29LV640MT/B
February 12, 2004
A D V A N C E
I N F O R M A T I O N
Sector Group Protection and
Unprotection
Sector
A21–A12
Sector/
Sector Block Size
SA80-SA83
10100XXXXX
256 (4x64) Kbytes
SA84-SA87
10101XXXXX
256 (4x64) Kbytes
SA88-SA91
10110XXXXX
256 (4x64) Kbytes
SA92-SA95
10111XXXXX
256 (4x64) Kbytes
SA96-SA99
11000XXXXX
256 (4x64) Kbytes
SA100-SA103
11001XXXXX
256 (4x64) Kbytes
SA104-SA107
11010XXXXX
256 (4x64) Kbytes
SA108-SA111
11011XXXXX
256 (4x64) Kbytes
SA112-SA115
11100XXXXX
256 (4x64) Kbytes
SA116-SA119
11101XXXXX
256 (4x64) Kbytes
SA120-SA123
11110XXXXX
256 (4x64) Kbytes
SA124-SA126
1111100XXX
1111101XXX
1111110XXX
192 (3x64) Kbytes
SA127
1111111000
8 Kbytes
SA128
1111111001
8 Kbytes
The device is shipped with all sector groups unprotected. AMD offers the option of programming and protecting sector groups at its factory prior to shipping the
device through AMD’s ExpressFlash™ Service. Contact an AMD representative for details.
SA129
1111111010
8 Kbytes
SA130
1111111011
8 Kbytes
SA131
1111111100
8 Kbytes
SA132
1111111101
8 Kbytes
SA133
1111111110
8 Kbytes
It is possible to determine whether a sector group is
protected or unprotected. See the Autoselect Mode
section for details.
SA134
1111111111
8 Kbytes
The hardware sector group protection feature disables
both program and erase operations in any sector
group. In this device, a sector group consists of four
adjacent sectors that are protected or unprotected at
the same time (see Tables 5 and 6). The hardware
sector group unprotection feature re-enables both program and erase operations in previously protected
sector groups. Sector group protection/unprotection
can be implemented via two methods.
Sector protection/unprotection requires VID on the RESET# pin only, and can be implemented either in-system or via programming equipment. Figure 2 shows
the algorithms and Figure 24 shows the timing diagram. This method uses standard microprocessor bus
cycle timing. For sector group unprotect, all unprotected sector groups must first be protected prior to
the first sector group unprotect write cycle.
Table 5.
Table 6.
Am29LV640MT Top Boot
Sector Protection
Am29LV640MB Bottom Boot
Sector Protection
Sector
A21–A12
Sector/
Sector Block Size
SA0
0000000000
8 Kbytes
Sector
A21–A12
Sector/
Sector Block Size
SA0-SA3
00000XXXXX
256 (4x64) Kbytes
SA1
0000000001
8 Kbytes
SA4-SA7
00001XXXXX
256 (4x64) Kbytes
SA2
0000000010
8 Kbytes
SA8-SA11
00010XXXXX
256 (4x64) Kbytes
SA3
0000000011
8 Kbytes
SA12-SA15
00011XXXXX
256 (4x64) Kbytes
SA4
0000000100
8 Kbytes
SA16-SA19
00100XXXXX
256 (4x64) Kbytes
SA5
0000000101
8 Kbytes
SA20-SA23
00101XXXXX
256 (4x64) Kbytes
SA6
0000000110
8 Kbytes
SA24-SA27
00110XXXXX
256 (4x64) Kbytes
SA7
0000000111
8 Kbytes
SA28-SA31
00111XXXXX
256 (4x64) Kbytes
SA32-SA35
01000XXXXX
256 (4x64) Kbytes
SA8–SA10
0000001XXX,
0000010XXX,
0000011XXX,
192 (3x64) Kbytes
SA36-SA39
01001XXXXX
256 (4x64) Kbytes
SA11–SA14
00001XXXXX
256 (4x64) Kbytes
SA40-SA43
01010XXXXX
256 (4x64) Kbytes
SA15–SA18
00010XXXXX
256 (4x64) Kbytes
SA44-SA47
01011XXXXX
256 (4x64) Kbytes
SA19–SA22
00011XXXXX
256 (4x64) Kbytes
SA48-SA51
01100XXXXX
256 (4x64) Kbytes
SA52-SA55
01101XXXXX
256 (4x64) Kbytes
SA56-SA59
01110XXXXX
256 (4x64) Kbytes
SA60-SA63
01111XXXXX
256 (4x64) Kbytes
SA64-SA67
10000XXXXX
256 (4x64) Kbytes
SA68-SA71
10001XXXXX
256 (4x64) Kbytes
SA72-SA75
10010XXXXX
256 (4x64) Kbytes
SA76-SA79
10011XXXXX
256 (4x64) Kbytes
February 12, 2004
SA23–SA26
00100XXXXX
256 (4x64) Kbytes
SA27-SA30
00101XXXXX
256 (4x64) Kbytes
SA31-SA34
00110XXXXX
256 (4x64) Kbytes
SA35-SA38
00111XXXXX
256 (4x64) Kbytes
SA39-SA42
01000XXXXX
256 (4x64) Kbytes
SA43-SA46
01001XXXXX
256 (4x64) Kbytes
SA47-SA50
01010XXXXX
256 (4x64) Kbytes
SA51-SA54
01011XXXXX
256 (4x64) Kbytes
Am29LV640MT/B
19
A D V A N C E
I N F O R M A T I O N
Temporary Sector Group Unprotect
Table 6. Am29LV640MB Bottom Boot
Sector Protection (Continued)
Sector
A21–A12
Sector/
Sector Block Size
SA55–SA58
01100XXXXX
256 (4x64) Kbytes
SA59–SA62
01101XXXXX
256 (4x64) Kbytes
SA63–SA66
01110XXXXX
256 (4x64) Kbytes
SA67–SA70
01111XXXXX
256 (4x64) Kbytes
SA71–SA74
10000XXXXX
256 (4x64) Kbytes
SA75–SA78
10001XXXXX
256 (4x64) Kbytes
SA79–SA82
10010XXXXX
256 (4x64) Kbytes
SA83–SA86
10011XXXXX
256 (4x64) Kbytes
SA87–SA90
10100XXXXX
256 (4x64) Kbytes
SA91–SA94
10101XXXXX
256 (4x64) Kbytes
SA95–SA98
10110XXXXX
256 (4x64) Kbytes
SA99–SA102
10111XXXXX
256 (4x64) Kbytes
SA103–SA106
11000XXXXX
256 (4x64) Kbytes
SA107–SA110
11001XXXXX
256 (4x64) Kbytes
SA111–SA114
11010XXXXX
256 (4x64) Kbytes
SA115–SA118
11011XXXXX
256 (4x64) Kbytes
SA119–SA122
11100XXXXX
256 (4x64) Kbytes
SA123–SA126
11101XXXXX
256 (4x64) Kbytes
SA127–SA130
11110XXXXX
256 (4x64) Kbytes
SA131–SA134
11111XXXXX
256 (4x64) Kbytes
(Note: In this device, a sector group consists of four adjacent
sectors that are protected or unprotected at the same time
(see Table 6).
This feature allows temporary unprotection of previously protected sector groups to change data in-system. The Sector Group Unprotect mode is activated by
setting the RESET# pin to VID. During this mode, formerly protected sector groups can be programmed or
erased by selecting the sector group addresses. Once
VID is removed from the RESET# pin, all the previously
protected sector groups are protected again. Figure 1
shows the algorithm, and Figure 23 shows the timing
diagrams, for this feature.
START
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
RESET# = VIH
Write Protect (WP#)
The Write Protect function provides a hardware
method of protecting the top two or bottom two sectors
without using V ID. WP# is one of two functions provided by the WP#/ACC input.
If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the first
or last sector independently of whether those sectors
were protected or unprotected using the method described in “Sector Group Protection and Unprotection”.
Note that if WP#/ACC is at VIL when the device is in
the standby mode, the maximum input load current is
increased. See the table in “DC Characteristics”.
Temporary Sector
Group Unprotect
Completed (Note 2)
Notes:
1. All protected sector groups unprotected (If WP# = VIL,
the first or last sector will remain protected).
2. All previously protected sector groups are protected
once again.
If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the top or bottom two sectors
were previously set to be protected or unprotected
using the method described in “Sector Group Protection and Unprotection”. Note: No external pullup is
necessary since the WP#/ACC pin has internal pullup
to VCC
20
Am29LV640MT/B
Figure 1. Temporary Sector Group
Unprotect Operation
February 12, 2004
A D V A N C E
I N F O R M A T I O N
START
START
PLSCNT = 1
RESET# = VID
Wait 1 µs
Temporary Sector
Group Unprotect
Mode
No
PLSCNT = 1
Protect all sector
groups: The indicated
portion of the sector
group protect algorithm
must be performed for all
unprotected sector
groups prior to issuing
the first sector group
unprotect address
RESET# = VID
Wait 1 µs
First Write
Cycle = 60h?
First Write
Cycle = 60h?
Temporary Sector
Group Unprotect
Mode
Yes
Yes
Set up sector
group address
No
All sector
groups
protected?
Yes
Sector Group Protect:
Write 60h to sector
group address with
A6–A0 = 0xx0010
Set up first sector
group address
Sector Group
Unprotect:
Write 60h to sector
group address with
A6–A0 = 1xx0010
Wait 150 µs
Verify Sector Group
Protect: Write 40h
to sector group
address with
A6–A0 = 0xx0010
Increment
PLSCNT
No
Reset
PLSCNT = 1
Read from
sector group address
with A6–A0
= 0xx0010
Wait 15 ms
Verify Sector Group
Unprotect: Write
40h to sector group
address with
A6–A0 = 1xx0010
Increment
PLSCNT
No
No
PLSCNT
= 25?
Read from
sector group
address with
A6–A0 = 1xx0010
Data = 01h?
Yes
No
Yes
Device failed
Protect
another
sector group?
Yes
PLSCNT
= 1000?
No
Yes
Remove VID
from RESET#
Device failed
Write reset
command
Sector Group
Protect
Algorithm
Set up
next sector group
address
No
Data = 00h?
Yes
Last sector
group
verified?
No
Yes
Sector Group
Protect complete
Sector Group
Unprotect
Algorithm
Remove VID
from RESET#
Write reset
command
Sector Group
Unprotect complete
Figure 2.
February 12, 2004
In-System Sector Group Protect/Unprotect Algorithms
Am29LV640MT/B
21
A D V A N C E
I N F O R M A T I O N
SecSi (Secured Silicon) Sector Flash
Memory Region
Factory Locked: SecSi Sector Programmed and
Protected At the Factory
The SecSi (Secured Silicon) Sector feature provides a
Flash memory region that enables permanent part
identification through an Electronic Serial Number
(ESN). The SecSi Sector is 128 words/256 bytes in
length, and uses a SecSi Sector Indicator Bit (DQ7) to
indicate whether or not the SecSi Sector is locked
when shipped from the factory. This bit is permanently
set at the factory and cannot be changed, which prevents cloning of a factory locked part. This ensures the
security of the ESN once the product is shipped to the
field.
In devices with an ESN, the SecSi Sector is protected
when the device is shipped from the factory. The SecSi
Sector cannot be modified in any way. See Table 7 for
SecSi Sector addressing.
AMD offers the device with the SecSi Sector either
fac t or y l ocke d or c u s t om e r l o ckabl e. T he fac tory-locked version is always protected when shipped
from the factory, and has the SecSi (Secured Silicon)
Sector Indicator Bit permanently set to a “1.” The customer-lockable version is shipped with the SecSi Sector unprotected, allowing customers to program the
sector after receiving the device. The customer-lockable version also has the SecSi Sector Indicator Bit
permanently set to a “0.” Thus, the SecSi Sector Indicator Bit prevents customer-lockable devices from
being used to replace devices that are factory locked.
The SecSi sector address space in this device is allocated as follows:
Table 7.
SecSi Sector Address
Range
SecSi Sector Contents
Standard
Factory
Locked
ExpressFlash
Factory Locked
x16
x8
000000h–
000007h
000000h–
00000Fh
ESN
ESN or
determined
by customer
000008h–
00007Fh
000010h–
0000FFh
Unavailable
Determined
by customer
Customer
Lockable
Determined
by customer
The system accesses the SecSi Sector through a
command sequence (see “Enter SecSi Sector/Exit
SecSi Sector Command Sequence”). After the system
has written the Enter SecSi Sector command sequence, it may read the SecSi Sector by using the addresses normally occupied by the first sector (SA0).
This mode of operation continues until the system issues the Exit SecSi Sector command sequence, or
until power is removed from the device. On power-up,
or following a hardware reset, the device reverts to
sending commands to sector SA0. Note that the ACC
function and unlock bypass modes are not available
when the SecSi Sector is enabled.
22
Customers may opt to have their code programmed by
AMD through the AMD ExpressFlash service. The devices are then shipped from AMD’s factory with the
SecSi Sector permanently locked. Contact an AMD
representative for details on using AMD’s ExpressFlash service.
Customer Lockable: SecSi Sector NOT
Programmed or Protected At the Factory
As an alternative to the factory-locked version, the device may be ordered such that the customer may program and protect the 128-word/256 bytes SecSi
sector.
The system may program the SecSi Sector using the
write-buffer, accelerated and/or unlock bypass methods, in addition to the standard programming command sequence. See Command Definitions.
Programming and protecting the SecSi Sector must be
used with caution since, once protected, there is no
procedure available for unprotecting the SecSi Sector
area and none of the bits in the SecSi Sector memory
space can be modified in any way.
The SecSi Sector area can be protected using one of
the following procedures:
■ Write the three-cycle Enter SecSi Sector Region
command sequence, and then follow the in-system
sector protect algorithm as shown in Figure 2, except that RESET# may be at either VIH or VID. This
allows in-system protection of the SecSi Sector
without raising any device pin to a high voltage.
Note that this method is only applicable to the SecSi
Sector.
■ To verify the protect/unprotect status of the SecSi
Sector, follow the algorithm shown in Figure 3.
Once the SecSi Sector is programmed, locked and
verified, the system must write the Exit SecSi Sector
Region command sequence to return to reading and
writing within the remainder of the array.
Am29LV640MT/B
February 12, 2004
A D V A N C E
I N F O R M A T I O N
hardware data protection measures prevent accidental
erasure or programming, which might otherwise be
caused by spurious system level signals during VCC
power-up and power-down transitions, or from system
noise.
START
RESET# =
VIH or VID
Wait 1 ms
Write 60h to
any address
If data = 00h,
SecSi Sector is
unprotected.
If data = 01h,
SecSi Sector is
protected.
Remove VIH or VID
from RESET#
Write 40h to SecSi
Sector address
with A6 = 0,
A1 = 1, A0 = 0
Read from SecSi
Sector address
with A6 = 0,
A1 = 1, A0 = 0
Figure 3.
Low VCC Write Inhibit
Write reset
command
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets to the read mode. Subsequent
writes are ignored until VCC is greater than VLKO. The
system must provide the proper signals to the control
pins to prevent unintentional writes when V CC is
greater than VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
SecSi Sector
Protect Verify
complete
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
SecSi Sector Protect Verify
Power-Up Write Inhibit
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Tables 12 and 13
for command definitions). In addition, the following
If WE# = CE# = VIL and OE# = V IH during power up,
the device does not accept commands on the rising
edge of WE#. The internal state machine is automatically reset to the read mode on power-up.
COMMON FLASH MEMORY INTERFACE (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device
families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address
55h, any time the device is ready to read array data.
The system can read CFI information at the addresses
given in Tables 8–11. To terminate reading CFI data,
the system must write the reset command.
February 12, 2004
The system can also write the CFI query command
when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 8–11. The
system must write the reset command to return the
device to reading array data.
For further information, please refer to the CFI Specification and CFI Publication 100, available via the World
Wide Web at http://www.amd.com/flash/cfi. Alternatively, contact an AMD representative for copies of
these documents.
Am29LV640MT/B
23
A D V A N C E
Table 8.
I N F O R M A T I O N
CFI Query Identification String
Addresses
(x16)
Addresses
(x8)
Data
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Description
Table 9.
System Interface String
Addresses
(x16)
Addresses
(x8)
Data
1Bh
36h
0027h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0036h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
3Ch
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
3Eh
0007h
Typical timeout per single byte/word write 2N µs
20h
40h
0007h
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2N ms
22h
44h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
46h
0001h
Max. timeout for byte/word write 2N times typical
24h
48h
0005h
Max. timeout for buffer write 2N times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2N times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
24
Description
Am29LV640MT/B
February 12, 2004
A D V A N C E
Table 10.
Addresses
(x16)
Addresses
(x8)
I N F O R M A T I O N
Device Geometry Definition
Data
Description
N
27h
4Eh
0017h
Device Size = 2 byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0005h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
58h
0002h
Number of Erase Block Regions within device (01h = uniform device, 02h = boot
device)
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
007Fh
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
007Eh
0000h
0000h
0001h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)
February 12, 2004
Am29LV640MT/B
25
A D V A N C E
Table 11.
I N F O R M A T I O N
Primary Vendor-Specific Extended Query
Addresses
(x16)
Addresses
(x8)
Data
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
86h
0031h
Major version number, ASCII
44h
88h
0033h
Minor version number, ASCII
45h
8Ah
0008h
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Description
Process Technology (Bits 7-2) 0010b = 0.23 µm MirrorBit
46h
8Ch
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
8Eh
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
90h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
92h
0004h
Sector Protect/Unprotect scheme
04 = 29LV800 mode
4Ah
94h
0000h
Simultaneous Operation
00 = Not Supported, X = Number of Sectors in Bank
4Bh
96h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
98h
0001h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
9Ah
00B5h
4Eh
9Ch
00C5h
4Fh
9Eh
0002h/
0003h
50h
A0h
0001h
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
Top/Bottom Boot Sector Flag
00h = Uniform Device without WP# protect, 02h = Bottom Boot Device, 03h = Top
Boot Device, 04h = Uniform sectors bottom WP# protect, 05h = Uniform sectors top
WP# protect
Program Suspend
00h = Not Supported, 01h = Supported
COMMAND DEFINITIONS
Writing specific address and data commands or sequences into the command register initiates device operations. Tables 12 and 13 define the valid register
command sequences. Writing incorrect address and
data values or writing them in the improper sequence
may place the device in an unknown state. A reset
command is then required to return the device to reading array data.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
26
first. Refer to the AC Characteristics section for timing
diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the erase-suspend-read mode, after
Am29LV640MT/B
February 12, 2004
A D V A N C E
I N F O R M A T I O N
which the system can read data from any
non-erase-suspended sector. After completing a programming operation in the Erase Suspend mode, the
system may once again read array data with the same
exception. See the Erase Suspend/Erase Resume
Commands section for more information.
The system must issue the reset command to return
the device to the read (or erase-suspend-read) mode if
DQ5 goes high during an active program or erase operation, or if the device is in the autoselect mode. See
the next section, Reset Command, for more information.
See also Requirements for Reading Array Data in the
Device Bus Operations section for more information.
The Read-Only Operations table provides the read parameters, and Figure 14 shows the timing diagram.
Reset Command
Writing the reset command resets the device to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the device to the read
mode. Once erasure begins, however, the device ignores reset commands until the operation is complete.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the device to
the read mode. If the program command sequence is
written while the device is in the Erase Suspend mode,
writing the reset command returns the device to the
erase-suspend-read mode. Once programming begins, however, the device ignores reset commands
until the operation is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to the read mode. If the device entered the autoselect mode while in the Erase
Suspend mode, writing the reset command returns the
device to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to the
read mode (or erase-suspend-read mode if the device
was in Erase Suspend).
Note that if DQ1 goes high during a Write Buffer Programming operation, the system must write the
Write-to-Buffer-Abort Reset command sequence to
reset the device for the next operation.
February 12, 2004
Autoselect Command Sequence
The autoselect command sequence allows the host
system to read several identifier codes at specific addresses:
Identifier Code
A7:A0
(x16)
A6:A-1
(x8)
Manufacturer ID
00h
00h
Device ID, Cycle 1
01h
02h
Device ID, Cycle 2
0Eh
1Ch
Device ID, Cycle 3
0Fh
1Eh
SecSi Sector Factory Protect
03h
06h
Sector Protect Verify
(SA)02h
(SA)04h
Note: The device ID is read over three cycles. SA = Sector
Address
Tables 12 and 13 show the address and data requirements. This method is an alternative to that shown in
Table 4, which is intended for PROM programmers
and requires VID on address pin A9. The autoselect
command sequence may be written to an address that
is either in the read or erase-suspend-read mode. The
autoselect command may not be written while the device is actively programming or erasing.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the autoselect command. The
device then enters the autoselect mode. The system
may read at any address any number of times without
initiating another autoselect command sequence.
The system must write the reset command to return to
the read mode (or erase-suspend-read mode if the device was previously in Erase Suspend).
Enter SecSi Sector/Exit SecSi Sector
Command Sequence
The SecSi Sector region provides a secured data area
containing an 8-word/16-byte random Electronic Serial
Number (ESN). The system can access the SecSi
Sector region by issuing the three-cycle Enter SecSi
Sector command sequence. The device continues to
access the SecSi Sector region until the system issues the four-cycle Exit SecSi Sector command sequence. The Exit SecSi Sector command sequence
returns the device to normal operation. Tables 12 and
13 show the address and data requirements for both
command sequences. See also “SecSi (Secured Silicon) Sector Flash Memory Region” for further information.
Word/Byte Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two
unlock write cycles, followed by the program set-up
command. The program address and data are written
next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further
Am29LV640MT/B
27
A D V A N C E
I N F O R M A T I O N
controls or timings. The device automatically provides
internally generated program pulses and verifies the
programmed cell margin. Tables 12 and 13 show the
address and data requirements for the word program
command sequence. Note that the autoselect and CFI
functions are unavailable when a program operation is
in progress.
When the Embedded Program algorithm is complete,
the device then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by using
DQ7 or DQ6. Refer to the Write Operation Status section for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program
operation. The program command sequence should
be reinitiated once the device has returned to the read
mode, to ensure data integrity.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from “0” back to a “1.” Attempting to do so may
cause the device to set DQ5 = 1, or cause the DQ7
and DQ6 status bits to indicate the operation was successful. However, a succeeding read will show that the
data is still “0.” Only erase operations can convert a “0”
to a “1.”
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program words to the device faster than using the standard program command sequence. The unlock bypass
command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. The device
then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is
required to program in this mode. The first cycle in this
sequence contains the unlock bypass program command, A0h; the second cycle contains the program
address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial
two unlock cycles required in the standard program
command sequence, resulting in faster total programming time. Tables 12 and 13 show the requirements
for the command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the data
90h. The second cycle must contain the data 00h. The
device then returns to the read mode.
28
Write Buffer Programming
Write Buffer Programming allows the system write to a
maximum of 16 words/32 bytes in one programming
operation. This results in faster effective programming
time than the standard programming algorithms. The
Write Buffer Programming command sequence is initiated by first writing two unlock cycles. This is followed
by a third write cycle containing the Write Buffer Load
command written at the Sector Address in which programming will occur. The fourth cycle writes the sector
address and the number of word locations, minus one,
to be programmed. For example, if the system will program 6 unique address locations, then 05h should be
written to the device. This tells the device how many
write buffer addresses will be loaded with data and
therefore when to expect the Program Buffer to Flash
command. The number of locations to program cannot
exceed the size of the write buffer or the operation will
abort.
The fifth cycle writes the first address location and
data to be programmed. The write-buffer-page is selected by address bits A MAX–A 4 . All subsequent add r e s s / d a t a p a i r s m u s t fa l l w i t h i n t h e
selected-write-buffer-page. The system then writes the
remaining address/data pairs into the write buffer.
Write buffer locations may be loaded in any order.
The write-buffer-page address must be the same for
all address/data pairs loaded into the write buffer.
(This means Write Buffer Programming cannot be performed across multiple write-buffer pages. This also
means that Write Buffer Programming cannot be performed across multiple sectors. If the system attempts
to load programming data outside of the selected
write-buffer page, the operation will abort.
Note that if a Write Buffer address location is loaded
multiple times, the address/data pair counter will be
decremented for every data load operation. The host
s y s t e m m u s t t h e r e fo r e a c c o u n t fo r l o a d i n g a
write-buffer location more than once. The counter decrements for each data load operation, not for each
unique write-buffer-address location. Note also that if
an address location is loaded more than once into the
buffer, the final data loaded for that address will be
programmed.
Once the specified number of write buffer locations
have been loaded, the system must then write the Program Buffer to Flash command at the sector address.
Any other address and data combination aborts the
Write Buffer Programming operation. The device then
begins programming. Data polling should be used
while monitoring the last address location loaded into
the write buffer. DQ7, DQ6, DQ5, and DQ1 should be
monitored to determine the device status during Write
Buffer Programming.
Am29LV640MT/B
February 12, 2004
A D V A N C E
I N F O R M A T I O N
The write-buffer programming operation can be suspended using the standard program suspend/resume
commands. Upon successful completion of the Write
Buffer Programming operation, the device is ready to
execute the next command.
command sequence must be written to reset the device for the next operation. Note that the full 3-cycle
Write-to-Buffer-Abort Reset command sequence is required when using Write-Buffer-Programming features
in Unlock Bypass mode.
The Write Buffer Programming Sequence can be
aborted in the following ways:
Accelerated Program
■ Load a value that is greater than the page buffer
size during the Number of Locations to Program
step.
■ Write to an address in a sector different than the
one specified during the Write-Buffer-Load command.
■ Write an Address/Data pair to a different
write-buffer-page than the one selected by the
Starting Address during the write buffer data loading stage of the operation.
■ Write data other than the Confirm Command after
the specified number of data load cycles.
The abort condition is indicated by DQ1 = 1, DQ7 =
DATA# (for the last address location loaded), DQ6 =
toggle, and DQ5=0. A Write-to-Buffer-Abort Reset
February 12, 2004
The device offers accelerated program operations
through the WP#/ACC pin. When the system asserts
VHH on the WP#/ACC pin, the device automatically enters the Unlock Bypass mode. The system may then
write the two-cycle Unlock Bypass program command
sequence. The device uses the higher voltage on the
WP#/ACC pin to accelerate the operation. Note that
the WP#/ACC pin must not be at V HH for operations
other than accelerated programming, or device damage may result. In addition, no external pullup is necessary since the WP#/ACC pin has internal pullup to
VCC.
Figure 5 illustrates the algorithm for the program operation. Refer to the Erase and Program Operations
table in the AC Characteristics section for parameters,
and Figure 17 for timing diagrams.
Am29LV640MT/B
29
A D V A N C E
I N F O R M A T I O N
Write “Write to Buffer”
command and
Sector Address
Part of “Write to Buffer”
Command Sequence
Write number of addresses
to program minus 1(WC)
and Sector Address
Write first address/data
Yes
WC = 0 ?
No
Write to a different
sector address
Abort Write to
Buffer Operation?
Yes
Write to buffer ABORTED.
Must write “Write-to-buffer
Abort Reset” command
sequence to return
to read mode.
No
(Note 1)
Write next address/data pair
WC = WC - 1
Write program buffer to
flash sector address
Notes:
1.
Read DQ7 - DQ0 at
Last Loaded Address
No
2. DQ7 may change simultaneously with DQ5.
Therefore, DQ7 should be verified.
3. If this flowchart location was reached because
DQ5= “1”, then the device FAILED. If this
flowchart location was reached because DQ1=
“1”, then the Write to Buffer operation was
ABORTED. In either case, the proper reset
command must be written before the device can
begin another operation. If DQ1=1, write the
Write-Buffer-Programming-Abort-Reset
command. if DQ5=1, write the Reset command.
Yes
DQ7 = Data?
No
No
DQ1 = 1?
DQ5 = 1?
Yes
Yes
When Sector Address is specified, any address in
the selected sector is acceptable. However, when
loading Write-Buffer address locations with data, all
addresses must fall within the selected Write-Buffer
Page.
4.
See Table 13 for command sequences required for
write buffer programming.
Read DQ7 - DQ0 with
address = Last Loaded
Address
(Note 2)
DQ7 = Data?
Yes
No
(Note 3)
FAIL or ABORT
Figure 4.
30
PASS
Write Buffer Programming Operation
Am29LV640MT/B
February 12, 2004
A D V A N C E
I N F O R M A T I O N
Program Suspend/Program Resume
Command Sequence
The Program Suspend command allows the system to
interrupt a programming operation or a Write to Buffer
programming operation so that data can be read from
any non-suspended sector. When the Program Suspend command is written during a programming process, the device halts the program operation within 15
µs maximum (5 µs typical) and updates the status bits.
Addresses are not required when writing the Program
Suspend command.
START
Write Program
Command Sequence
Data Poll
from System
Embedded
Program
algorithm
in progress
Verify Data?
No
Yes
Increment Address
No
Last Address?
Yes
Programming
Completed
Note: See Table 13 for program command sequence.
Figure 5.
February 12, 2004
Program Operation
After the programming operation has been suspended, the system can read array data from any
non-suspended sector. The Program Suspend command may also be issued during a programming operation while an erase is suspended. In this case, data
may be read from any addresses not in Erase Suspend or Program Suspend. If a read is needed from
the SecSi Sector area (One-time Program area), then
user must use the proper command sequences to
enter and exit this region.
The system may also write the autoselect command
sequence when the device is in the Program Suspend
mode. The system can read as many autoselect codes
as required. When the device exits the autoselect
mode, the device reverts to the Program Suspend
mode, and is ready for another valid operation. See
Autoselect Command Sequence for more information.
After the Program Resume command is written, the
device reverts to programming. The system can determine the status of the program operation using the
DQ7 or DQ6 status bits, just as in the standard program operation. See Write Operation Status for more
information.
Am29LV640MT/B
31
A D V A N C E
I N F O R M A T I O N
The system must write the Program Resume command (address bits are don’t care) to exit the Program
Suspend mode and continue the programming operation. Further writes of the Resume command are ignored. Another Program Suspend command can be
written after the device has resume programming.
Any commands written during the chip erase operation
are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence should be
reinitiated once the device has returned to reading
array data, to ensure data integrity.
Program Operation
or Write-to-Buffer
Sequence in Progress
Write address/data
XXXh/B0h
Write Program Suspend
Command Sequence
Figure 7 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters,
and Figure 19 section for timing diagrams.
Command is also valid for
Erase-suspended-program
operations
Wait 15 µs
Read data as
required
No
Autoselect and SecSi Sector
read operations are also allowed
Data cannot be read from erase- or
program-suspended sectors
Done
reading?
Yes
Write address/data
XXXh/30h
Write Program Resume
Command Sequence
Device reverts to
operation prior to
Program Suspend
Figure 6.
Program Suspend/Program Resume
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any controls or timings during these operations. Tables 12 and
13 shows the address and data requirements for the
chip erase command sequence. Note that the autoselect and CFI functions are unavailable when an erase
operation is in progress.
32
When the Embedded Erase algorithm is complete, the
device returns to the read mode and addresses are no
longer latched. The system can determine the status
of the erase operation by using DQ7, DQ6, or DQ2.
Refer to the Write Operation Status section for information on these status bits.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and
the sector erase command. Tables 12 and 13 shows
the address and data requirements for the sector
erase command sequence. Note that the autoselect
and CFI functions are unavailable when an erase operation is in progress.
The device does not require the system to preprogram
prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or timings during these operations.
After the command sequence is written, a sector erase
time-out of 50 µs occurs. During the time-out period,
additional sector addresses and sector erase commands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time
between these additional cycles must be less than 50
µs, otherwise erasure may begin. Any sector erase address and command following the exceeded time-out
may or may not be accepted. It is recommended that
processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can
be re-enabled after the last Sector Erase command is
written. Any command other than Sector Erase or
Erase Suspend during the time-out period resets
the device to the read mode. The system must rewrite the command sequence and any additional addresses and commands.
Am29LV640MT/B
February 12, 2004
A D V A N C E
I N F O R M A T I O N
The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3:
Sector Erase Timer.). The time-out begins from the rising edge of the final WE# pulse in the command
sequence.
START
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses
are no longer latched. The system can determine the
status of the erase operation by reading DQ7, DQ6, or
DQ2 in the erasing sector. Refer to the Write Operation Status section for information on these status bits.
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands are ignored. However, note that a hardware
reset immediately terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once the device has returned to
reading array data, to ensure data integrity.
No
Figure 7 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters,
and Figure 19 section for timing diagrams.
Embedded
Erase
algorithm
in progress
Data = FFh?
Yes
Erasure Completed
Notes:
1. See Table 12 and Table 13 for erase command
sequence.
2. See the section on DQ3 for information on the sector
erase timer.
Figure 7.
February 12, 2004
Am29LV640MT/B
Erase Operation
33
A D V A N C E
I N F O R M A T I O N
Erase Suspend/Erase Resume
Commands
Autoselect Mode and Autoselect Command Sequence
sections for details.
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected
for erasure. This command is valid only during the sector erase operation, including the 50 µs time-out period during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program
algorithm.
To resume the sector erase operation, the system
must write the Erase Resume command. Fur ther
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the chip
has resumed erasing.
When the Erase Suspend command is written during
the sector erase operation, the device requires a typical of 5 µs (maximum of 20 µs) to suspend the erase
operation. However, when the Erase Suspend command is written during the sector erase time-out, the
device immediately terminates the time-out period and
suspends the erase operation.
After the erase operation has been suspended, the
device enters the erase-suspend-read mode. The system can read data from or program data to any sector
not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Reading at
any address within erase-suspended sectors produces status information on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
Refer to the Write Operation Status section for information on these status bits.
Note: During an erase operation, this flash device performs multiple internal operations which are invisible
to the system. When an erase operation is suspended,
any of the internal operations that were not fully completed must be restarted. As such, if this flash device
is continually issued suspend/resume commands in
rapid succession, erase progress will be impeded as a
function of the number of suspends. The result will be
a longer cumulative erase time than without suspends.
Note that the additional suspends do not affect device
reliability or future performance. In most systems rapid
erase/suspend activity occurs only briefly. In such
cases, erase performance will not be significantly impacted.
After an erase-suspended program operation is complete, the device returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard word program operation.
Refer to the Write Operation Status section for more
information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
34
Am29LV640MT/B
February 12, 2004
A D V A N C E
I N F O R M A T I O N
Command Definitions
Table 12.
Read (Note 5)
Autoselect (Note 7)
Reset (Note 6)
Bus Cycles (Notes 1–4)
Cycles
Command Sequence
(Notes)
Command Definitions (x16 Mode, BYTE# = VIH)
Addr
Data
1
RA
RD
First
Second
Third
Fourth
Fifth
Addr
Data
Addr
Data
Addr
Data
1
XXX
F0
Manufacturer ID
4
555
AA
2AA
55
555
90
X00
0001
Device ID (Note 8)
6
555
AA
2AA
55
555
90
X01
227E
SecSi™ Sector Factory Protect
(Note 9)
4
555
AA
2AA
55
555
90
X03
(Note 9)
Sector Group Protect Verify
(Note 10)
4
555
AA
2AA
55
555
90
(SA)X02
00/01
Sixth
Addr
Data
Addr
Data
X0E
2210
X0F
2200/
2201
PA
PD
WBL
PD
Enter SecSi Sector Region
3
555
AA
2AA
55
555
88
Exit SecSi Sector Region
4
555
AA
2AA
55
555
90
XXX
00
Program
4
555
AA
2AA
55
555
A0
PA
PD
Write to Buffer (Note 11)
6
555
AA
2AA
55
SA
25
SA
WC
Program Buffer to Flash
1
SA
29
Write to Buffer Abort Reset (Note 12)
3
555
AA
2AA
55
555
F0
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass Program (Note 13)
2
XXX
A0
PA
PD
Unlock Bypass Reset (Note 14)
2
XXX
90
XXX
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Program/Erase Suspend (Note 15)
1
XXX
B0
Program/Erase Resume (Note 16)
1
XXX
30
CFI Query (Note 17)
1
55
98
Legend:
X = Don’t care
RA = Read Address of the memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on the falling edge of the WE#
or CE# pulse, whichever happens later.
PD = Program Data for location PA. Data latches on the rising edge of
WE# or CE# pulse, whichever happens first.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
SA = Sector Address of sector to be verified (in autoselect mode) or
erased. Address bits A21–A15 uniquely select any sector.
WBL = Write Buffer Location. Address must be within the same write
buffer page as PA.
WC = Word Count. Number of write buffer locations to load minus 1.
bottom two address sectors, the data is 88h for factory locked and
08h for not factor locked.
3. Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
10. The data is 00h for an unprotected sector group and 01h for a
protected sector group.
4. During unlock cycles, when lower address bits are 555 or 2AAh
as shown in table, address bits higher than A11 (except where BA
is required) and data bits higher than DQ7 are don’t cares.
11. The total number of cycles in the command sequence is
determined by the number of words written to the write buffer. The
maximum number of cycles in the command sequence is 21.
5. No unlock or command cycles required when device is in read
mode.
12. Command sequence resets device for next command after
aborted write-to-buffer operation.
6. The Reset command is required to return to the read mode (or to
the erase-suspend-read mode if previously in Erase Suspend)
when the device is in the autoselect mode, or if DQ5 goes high
while the device is providing status information.
13. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
14. The Unlock Bypass Reset command is required to return to the
read mode when the device is in the unlock bypass mode.
7. The fourth cycle of the autoselect command sequence is a read
cycle. Data bits DQ15–DQ8 are don’t care. Except RD, PD and
WC. See the Autoselect Command Sequence section for more
information.
15. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation.
8. The device ID must be read in three cycles. The data is 2201h for
top boot and 2200h for bottom boot.
16. The Erase Resume command is valid only during the Erase
Suspend mode.
9. If WP# protects the top two address sectors, the data is 98h for
factory locked and 18h for not factory locked. If WP# protects the
17. Command is valid when device is ready to read array data or when
device is in autoselect mode.
February 12, 2004
Am29LV640MT/B
35
A D V A N C E
Table 13.
Read (Note 5)
Autoselect (Note 7)
Reset (Note 6)
Command Definitions (x8 Mode, BYTE# = VIL)
Bus Cycles (Notes 1–4)
Cycles
Command Sequence
(Notes)
I N F O R M A T I O N
Addr
Data
1
RA
RD
First
Second
Third
Fourth
Addr
Data
Addr
Data
Addr
Fifth
Data
1
XXX
F0
Manufacturer ID
4
AAA
AA
555
55
AAA
90
X00
01
Device ID (Note 8)
6
AAA
AA
555
55
AAA
90
X02
7E
SecSi™ Sector Factory Protect
(Note 9)
4
AAA
AA
555
55
AAA
90
X06
(Note 9)
Sector Group Protect Verify
(Note 10)
4
AAA
AA
555
55
AAA
90
(SA)X04
00/01
Sixth
Addr
Data
Addr
Data
X1C
10
X1E
00/01
PA
PD
WBL
PD
Enter SecSi Sector Region
3
AAA
AA
555
55
AAA
88
Exit SecSi Sector Region
4
AAA
AA
555
55
AAA
90
XXX
00
Program
4
AAA
AA
555
55
AAA
A0
PA
PD
Write to Buffer (Note 11)
6
AAA
AA
555
55
SA
25
SA
BC
Program Buffer to Flash
1
SA
29
Write to Buffer Abort Reset (Note 12)
3
AAA
AA
555
55
AAA
F0
Unlock Bypass
3
AAA
AA
555
55
AAA
20
Unlock Bypass Program (Note 13)
2
XXX
A0
PA
PD
Unlock Bypass Reset (Note 14)
2
XXX
90
XXX
00
Chip Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Sector Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
SA
30
Program/Erase Suspend (Note 15)
1
XXX
B0
Program/Erase Resume (Note 16)
1
XXX
30
CFI Query (Note 17)
1
AA
98
Legend:
X = Don’t care
RA = Read Address of the memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on the falling edge of the WE#
or CE# pulse, whichever happens later.
PD = Program Data for location PA. Data latches on the rising edge of
WE# or CE# pulse, whichever happens first.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
SA = Sector Address of sector to be verified (in autoselect mode) or
erased. Address bits A21–A15 uniquely select any sector.
WBL = Write Buffer Location. Address must be within the same write
buffer page as PA.
BC = Byte Count. Number of write buffer locations to load minus 1.
bottom two address sectors, the data is 88h for factory locked and
08h for not factor locked.
3. Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
10. The data is 00h for an unprotected sector group and 01h for a
protected sector group.
4. During unlock cycles, when lower address bits are 555 or AAAh
as shown in table, address bits higher than A11 (except where BA
is required) and data bits higher than DQ7 are don’t cares.
11. The total number of cycles in the command sequence is
determined by the number of words written to the write buffer. The
maximum number of cycles in the command sequence is 37.
5. No unlock or command cycles required when device is in read
mode.
12. Command sequence resets device for next command after
aborted write-to-buffer operation.
6. The Reset command is required to return to the read mode (or to
the erase-suspend-read mode if previously in Erase Suspend)
when the device is in the autoselect mode, or if DQ5 goes high
while the device is providing status information.
13. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
7. The fourth cycle of the autoselect command sequence is a read
cycle. Data bits DQ15–DQ8 are don’t care. See the Autoselect
Command Sequence section for more information.
8. The device ID must be read in three cycles. The data is 01h for
top boot and 00h for bottom boot
9. If WP# protects the top two address sectors, the data is 98h for
factory locked and 18h for not factory locked. If WP# protects the
36
14. The Unlock Bypass Reset command is required to return to the
read mode when the device is in the unlock bypass mode.
15. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation.
16. The Erase Resume command is valid only during the Erase
Suspend mode.
17. Command is valid when device is ready to read array data or when
device is in autoselect mode.
Am29LV640MT/B
February 12, 2004
A D V A N C E
I N F O R M A T I O N
WRITE OPERATION STATUS
The device provides several bits to determine the status of a
program or erase operation: DQ2, DQ3, DQ5, DQ6, and
DQ7. Table 14 and the following subsections describe the
function of these bits. DQ7 and DQ6 each offer a method for
determining whether a program or erase operation is complete or in progress. The device also provides a hardware-based output signal, RY/BY#, to determine
whether an Embedded Program or Erase operation is
in progress or has been completed.
valid data, the data outputs on DQ0–DQ6 may be still
invalid. Valid data on DQ0–DQ7 will appear on successive read cycles.
Table 14 shows the outputs for Data# Polling on DQ7.
Figure 8 shows the Data# Polling algorithm. Figure 20
in the AC Characteristics section shows the Data#
Polling timing diagram.
DQ7: Data# Polling
START
The Data# Polling bit, DQ7, indicates to the host system
whether an Embedded Program or Erase algorithm is in
progress or completed, or whether the device is in Erase
Suspend. Data# Polling is valid after the rising edge of the
final WE# pulse in the command sequence.
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to
DQ7. This DQ7 status also applies to programming during
Erase Suspend. When the Embedded Program algorithm is
complete, the device outputs the datum programmed to
DQ7. The system must provide the program address to
read valid status information on DQ7. If a program address
falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then the device returns to the
read mode.
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
No
No
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the device enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
The system must provide an address within any of the
sectors selected for erasure to read valid status information on DQ7.
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 µs, then the
device returns to the read mode. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected
sector, the status may not be valid.
Just prior to the completion of an Embedded Program
or Erase operation, DQ7 may change asynchronously
with DQ0–DQ6 while Output Enable (OE#) is asserted
low. That is, the device may change from providing
status information to valid data on DQ7. Depending on
when the system samples the DQ7 output, it may read
the status or valid data. Even if the device has completed the program or erase operation and DQ7 has
February 12, 2004
Yes
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector address
within the sector being erased. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Am29LV640MT/B
Figure 8. Data# Polling Algorithm
37
A D V A N C E
I N F O R M A T I O N
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin
which indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in
the Erase Suspend mode.) If the output is high
(Ready), the device is in the read mode, the standby
mode, or in the erase-suspend-read mode. Table 14
shows the outputs for RY/BY#.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase
Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final
WE# pulse in the command sequence (prior to the
program or erase operation), and during the sector
erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause
DQ6 to toggle. The system may use either OE# or
CE# to control the read cycles. When the operation is
complete, DQ6 stops toggling.
38
After an erase command sequence is written, if all sectors
selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading array data. If not all
selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected.
The system can use DQ6 and DQ2 together to determine
whether a sector is actively erasing or is erase-suspended.
When the device is actively erasing (that is, the Embedded
Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling.
However, the system must also use DQ2 to determine
which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see the subsection on
DQ7: Data# Polling).
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 µs after the program
command sequence is written, then returns to reading
array data.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Program algorithm is complete.
Table 14 shows the outputs for Toggle Bit I on DQ6.
Figure 9 shows the toggle bit algorithm. Figure 21 in
the “AC Characteristics” section shows the toggle bit
timing diagrams. Figure 22 shows the differences between DQ2 and DQ6 in graphical form. See also the
subsection on DQ2: Toggle Bit II.
Am29LV640MT/B
February 12, 2004
A D V A N C E
I N F O R M A T I O N
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
START
Read DQ7–DQ0
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but
cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and
mode information. Refer to Table 14 to compare outputs for DQ2 and DQ6.
Read DQ7–DQ0
Toggle Bit
= Toggle?
No
Yes
No
Figure 9 shows the toggle bit algorithm in flowchart
form, and the section “DQ2: Toggle Bit II” explains the
algorithm. See also the RY/BY#: Ready/Busy# subsection. Figure 21 shows the toggle bit timing diagram.
Figure 22 shows the differences between DQ2 and
DQ6 in graphical form.
DQ5 = 1?
Yes
Read DQ7–DQ0
Twice
Toggle Bit
= Toggle?
Reading Toggle Bits DQ6/DQ2
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Note: The system should recheck the toggle bit even if
DQ5 = “1” because the toggle bit may stop toggling as DQ5
changes to “1.” See the subsections on DQ6 and DQ2 for
more information.
Figure 9.
Toggle Bit Algorithm
Refer to Figure 9 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Typically,
the system would note and store the value of the toggle bit after the first read. After the second read, the
system would compare the new value of the toggle bit
with the first. If the toggle bit is not toggling, the device
has completed the program or erase operation. The
system can read array data on DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling
just as DQ5 went high. If the toggle bit is no longer
toggling, the device has successfully completed the
program or erase operation. If it is still toggling, the device did not completed the operation successfully, and
the system must write the reset command to return to
reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor
the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform
February 12, 2004
Am29LV640MT/B
39
A D V A N C E
I N F O R M A T I O N
other system tasks. In this case, the system must start
at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 9).
DQ5: Exceeded Timing Limits
DQ5 indic ates whether the program, erase, or
write-to-buffer time has exceeded a specified internal
pulse count limit. Under these conditions DQ5 produces a
“1,” indicating that the program or erase cycle was not successfully completed.
The device may output a “1” on DQ5 if the system tries
to program a “1” to a location that was previously programmed to “0.” Only an erase operation can
change a “0” back to a “1.” Under this condition, the
device halts the operation, and when the timing limit
has been exceeded, DQ5 produces a “1.”
In all these cases, the system must write the reset
command to return the device to the reading the array
(or to erase-suspend-read if the device was previously
in the erase-suspend-program mode).
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not
erasure has begun. (The sector erase timer does not
apply to the chip erase command.) If additional
sectors are selected for erasure, the entire time-out
also applies after each additional sector erase com-
Table 14.
Standard
Mode
Program
Suspend
Mode
Erase
Suspend
Mode
Write-toBuffer
Status
Embedded Program Algorithm
Embedded Erase Algorithm
Program-Suspended
Program- Sector
Suspend
Non-Program
Read
Suspended Sector
Erase-Suspended
EraseSector
Suspend
Non-Erase Suspended
Read
Sector
Erase-Suspend-Program
(Embedded Program)
Busy (Note 3)
Abort (Note 4)
mand. When the time-out period is complete, DQ3
switches from a “0” to a “1.” If the time between additional sector erase commands from the system can be
assumed to be less than 50 µs, the system need not
monitor DQ3. See also the Sector Erase Command
Sequence section.
After the sector erase command is written, the system
should read the status of DQ7 (Data# Polling) or DQ6
(Toggle Bit I) to ensure that the device has accepted
the command sequence, and then read DQ3. If DQ3 is
“1,” the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored
until the erase operation is complete. If DQ3 is “0,” the
device will accept additional sector erase commands.
To ensure the command has been accepted, the system software should check the status of DQ3 prior to
and following each subsequent sector erase command. If DQ3 is high on the second status check, the
last command might not have been accepted.
Table 14 shows the status of DQ3 relative to the other
status bits.
DQ1: Write-to-Buffer Abort
DQ1 indicates whether a Write-to-Buffer operation
was aborted. Under these conditions DQ1 produces a
“1”.
The
system
must
issue
the
Write-to-Buffer-Abort-Reset command sequence to return the device to reading array data. See Write Buffer
Write Operation Status
DQ7
(Note 2)
DQ7#
0
1
DQ6
Toggle
Toggle
No toggle
DQ5
(Note 1)
0
0
DQ3
N/A
1
DQ2
(Note 2)
No toggle
Toggle
DQ1
0
N/A
RY/BY#
0
0
Invalid (not allowed)
1
Data
1
0
N/A
Toggle
N/A
Data
1
1
DQ7#
Toggle
0
N/A
N/A
N/A
0
DQ7#
DQ7#
Toggle
Toggle
0
0
N/A
N/A
N/A
N/A
0
1
0
0
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program, Embedded Erase, or Write-to-Buffer operation has exceeded the
maximum timing limits. Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location.
4. DQ1 switches to ‘1’ when the device has aborted the write-to-buffer operation.
40
Am29LV640MT/B
February 12, 2004
A D V A N C E
I N F O R M A T I O N
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –65°C to +125°C
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
20 ns
20 ns
+0.8 V
–0.5 V
–2.0 V
VIO . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to +4.0 V
20 ns
A9, OE#, ACC, and RESET#
(Note 2) . . . . . . . . . . . . . . . . . . . .–0.5 V to +12.5 V
Figure 10. Maximum Negative
Overshoot Waveform
All other pins (Note 1) . . . . . . –0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V.
During voltage transitions, input or I/O pins may
overshoot V SS to –2.0 V for periods of up to 20 ns.
Maximum DC voltage on input or I/O pins is VCC +0.5 V.
See Figure 10. During voltage transitions, input or I/O
pins may overshoot to VCC +2.0 V for periods up to 20 ns.
See Figure 11.
2. Minimum DC input voltage on pins A9, OE#, ACC, and
RESET# is –0.5 V. During voltage transitions, A9, OE#,
ACC, and RESET# may overshoot V SS to –2.0 V for
periods of up to 20 ns. See Figure 10. Maximum DC
input voltage on pin A9, OE#, ACC, and RESET# is
+12.5 V which may overshoot to +14.0 V for periods up
to 20 ns.
20 ns
VCC
+2.0 V
VCC
+0.5 V
2.0 V
20 ns
20 ns
Figure 11. Maximum Positive
Overshoot Waveform
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This
is a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
OPERATING RANGES
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C
Supply Voltages
VCC for full voltage range . . . . . . . . . . . . . . . 2.7–3.6 V
VCC for regulated voltage range . . . . . . . . . . 3.0–3.6 V
Note: Operating ranges define those limits between which
the functionality of the device is guaranteed.
February 12, 2004
Am29LV640MT/B
41
A D V A N C E
I N F O R M A T I O N
DC CHARACTERISTICS
CMOS Compatible
Parameter
Symbol
Parameter Description
(Notes)
Test Conditions
Min
ILI
Input Load Current (1)
VIN = VSS to VCC,
VCC = VCC max
ILIT
A9, ACC Input Load Current
VCC = VCC max; A9 = 12.5 V
ILO
Output Leakage Current
VOUT = VSS to VCC,
VCC = VCC max
ILR
Reset Leakage Current
VCC = VCC max; RESET= 12.5 V
ICC1
VCC Active Read Current
(2, 3)
CE# = VIL, OE# = VIH,
ICC2
VCC Initial Page Read Current (2, 3)
ICC3
Typ
Max
Unit
±1.0
µA
35
µA
±1.0
µA
35
µA
5 MHz
15
20
1 MHz
15
20
CE# = VIL, OE# = VIH
30
50
mA
VCC Intra-Page Read Current (2, 3)
CE# = VIL, OE# = VIH
10
20
mA
ICC4
VCC Active Write Current (3, 4)
CE# = VIL, OE# = VIH
50
60
mA
ICC5
VCC Standby Current (3)
CE#, RESET# = VCC ± 0.3 V,
WP# = VIH
1
5
µA
ICC6
VCC Reset Current (3)
RESET# = VSS ± 0.3 V, WP# = VIH
1
5
µA
ICC7
Automatic Sleep Mode (3, 5)
VIH = VCC ± 0.3 V;
VIL = VSS ± 0.3 V, WP# = VIH
1
5
µA
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
1.9
VCC + 0.5
V
VID
Voltage for Autoselect and Temporary
VCC = 2.7 –3.6 V
Sector Unprotect
11.5
12.5
V
VOL
Output Low Voltage
0.15 x VCC
V
VOH1
Output High Voltage
VOH2
VLKO
mA
IOL = 4.0 mA, VCC = VCC min
IOH = –2.0 mA, VCC = VCC min
0.85 VCC
V
IOH = –100 µA, VCC = VCC min
VCC–0.4
V
Low VCC Lock-Out Voltage (6)
2.3
2.5
V
Notes:
1.
On the WP#/ACC pin only, the maximum input load current when
WP# = VIL is ± 5.0 µA.
4. ICC active while Embedded Erase or Embedded Program is in
progress.
2. The ICC current listed is typically less than 2 mA/MHz, with OE# at
VIH.
5. Automatic sleep mode enables the low power mode when
addresses remain stable for tACC + 30 ns.
3. Maximum ICC specifications are tested with VCC = VCCmax.
6. Not 100% tested.
7. Includes RY/BY#
42
Am29LV640MT/B
February 12, 2004
A D V A N C E
I N F O R M A T I O N
TEST CONDITIONS
Table 15.
3.3 V
Test Condition
2.7 kΩ
Device
Under
Test
CL
Test Specifications
6.2 kΩ
All Speeds
Output Load
1 TTL gate
Output Load Capacitance, CL
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
0.0–3.0
V
Input timing measurement
reference levels (See Note)
1.5
V
Output timing measurement
reference levels
0.5 VIO
V
Input Pulse Levels
Note: Diodes are IN3064 or equivalent
Figure 12.
Test Setup
Unit
Note: If VIO < VCC, the reference level is 0.5 VIO.
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
3.0 V
Input
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
1.5 V
Measurement Level
0.5 VIO V
Output
0.0 V
Note: If VIO < VCC, the input measurement reference level is 0.5 VIO.
Figure 13. Input Waveforms and
Measurement Levels
February 12, 2004
Am29LV640MT/B
43
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Read-Only Operations
Parameter
Speed Options
JEDEC Std. Description
Test Setup
tAVAV
tRC Read Cycle Time (Note 1)
tAVQV
tACC Address to Output Delay
tELQV
tCE Chip Enable to Output Delay
tPAC
90R
100R
100
110R
110,
120R
120
Unit
Min
90
100
110
120
ns
CE#, OE#
= VIL
Max
90
100
110
120
ns
OE# = VIL
Max
90
100
110
120
ns
Max
25
30
30
40
30
40
ns
25
30
30
40
30
40
ns
Page Access Time
C
tGLQV
tOE Output Enable to Output Delay
Max
tEHQZ
tDF
Chip Enable to Output High Z
(Note 1)
Max
16
ns
tGHQZ
tDF
Output Enable to Output High
Z (Note 1)
Max
16
ns
tAXQX
Output Hold Time From
tOH Addresses, CE# or OE#,
Whichever Occurs First
Min
0
ns
Min
0
ns
Min
10
ns
Output Enable Read
tOEH Hold Time
Toggle and
(Note 1)
Data# Polling
Notes:
1. Not 100% tested.
2. See Figure 12 and Table 15 for test specifications.
tRC
Addresses Stable
Addresses
tACC
CE#
tRH
tRH
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0V
Figure 14.
44
Read Operation Timings
Am29LV640MT/B
February 12, 2004
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Same Page
A21-A2
A1-A0
Aa
Ab
tPACC
tACC
Data Bus
Qa
Ad
Ac
tPACC
Qb
tPACC
Qc
Qd
CE#
OE#
* Figure shows word mode. Addresses are A1–A-1 for byte mode.
Figure 15.
February 12, 2004
Page Read Timings
Am29LV640MT/B
45
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JEDEC
Std.
Description
All Speed Options
Unit
tReady
RESET# Pin Low (During Embedded Algorithms)
to Read Mode (See Note)
Max
20
µs
tReady
RESET# Pin Low (NOT During Embedded
Algorithms) to Read Mode (See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
Reset High Time Before Read (See Note)
Min
50
ns
tRPD
RESET# Low to Standby Mode
Min
20
µs
Note: Not 100% tested.
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
Figure 16.
46
Reset Timings
Am29LV640MT/B
February 12, 2004
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Erase and Program Operations
Parameter
Speed Options
90R
100,
100R
112,
112R
120,
120R
Unit
90
100
110
120
ns
JEDEC
Std.
Description
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit
polling
Min
15
ns
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
tDVWH
tDS
Data Setup Time
Min
45
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOEPH
Output Enable High during toggle bit polling
Min
20
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
ns
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
Write Buffer Program Operation (Notes 2, 3)
Typ
352
µs
Per Byte
Typ
11
µs
Per Word
Typ
22
µs
Per Byte
Typ
8.8
µs
Per Word
Typ
17.6
µs
tWLAX
Effective Write Buffer Program
Operation (Notes 2, 4)
tWHWH1
tWHWH1
Accelerated Effective Write Buffer
Program Operation (Notes 2, 4)
Byte
Single Word/Byte Program
Operation (Note 2, 5)
µs
Word
Accelerated Single Word/Byte
Programming Operation (Note 2, 5)
tWHWH2
100
Typ
100
Byte
90
Typ
µs
Word
90
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
tVHH
VHH Rise and Fall Time (Note 1)
Min
250
ns
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tBUSY
WE# High to RY/BY# Low
Min
tPOLL
Program Valid Before Status Polling (Note 6)
Max
90
100
110
4
120
ns
µs
Notes:
1.
Not 100% tested.
2. See the “Erase And Programming 32-byte Performance” section
for more information.
3. For 1–16 words/ 1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/
32-byte write buffer operation.
February 12, 2004
5. Word/Byte programming specification is based upon a single
word/byte programming operation not utilizing the write buffer.
6. When using the program suspend/resume feature, if the suspend
command is issued within tPOLL, tPOLL must be fully re-applied
upon resuming the programming operation. If the suspend
command is issued after tPOLL, tPOLL is not required again prior to
reading the status bits upon resuming.
Am29LV640MT/B
47
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
tAS
tWC
Addresses
Read Status Data (last two cycles)
555h
PA
PA
PA
tAH
CE#
tCH
OE#
tPOLL
tWP
WE#
tWPH
tCS
tDS
tDH
PD
A0h
Data
tWHWH1
Status
tBUSY
DOUT
tRB
RY/BY#
VCC
tVCS
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 17.
Program Operation Timings
VHH
ACC
VIL or VIH
VIL or VIH
tVHH
Figure 18.
48
tVHH
Accelerated Program Timing Diagram
Am29LV640MT/B
February 12, 2004
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
tAS
tWC
2AAh
Addresses
Read Status Data
VA
SA
VA
555h for chip erase
tAH
CE#
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
In
Progress
30h
Complete
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCC
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”.
2. These waveforms are for the word mode.
Figure 19.
February 12, 2004
Chip/Sector Erase Operation Timings
Am29LV640MT/B
49
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
tRC
Addresses
VA
tPOLL
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
DQ15 and DQ7
DQ14–DQ8, DQ6–DQ0
Complement
Complement
Status Data
Status Data
True
True
Valid Data
Valid Data
High Z
High Z
tBUSY
RY/BY#
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Figure 20.
50
Data# Polling Timings (During Embedded Algorithms)
Am29LV640MT/B
February 12, 2004
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
tAHT
tAS
Addresses
tAHT
tASO
CE#
tCEPH
tOEH
WE#
tOEPH
OE#
tDH
DQ6/DQ2
tOE
Valid
Status
Valid
Status
Valid
Status
(first read)
(second read)
(stops toggling)
Valid Data
Valid Data
RY/BY#
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status
read cycle, and array data read cycle
Figure 21.
Enter
Embedded
Erasing
WE#
Erase
Suspend
Erase
Toggle Bit Timings (During Embedded Algorithms)
Enter Erase
Suspend Program
Erase
Suspend
Program
Erase Suspend
Read
Erase
Resume
Erase Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle
DQ2 and DQ6.
Figure 22.
February 12, 2004
DQ2 vs. DQ6
Am29LV640MT/B
51
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Temporary Sector Unprotect
Parameter
JEDEC
Std
Description
tVIDR
VID Rise and Fall Time (See Note)
tRSP
RESET# Setup Time for Temporary Sector
Unprotect
All Speed Options
Unit
Min
500
ns
Min
4
µs
Note: Not 100% tested.
VID
RESET#
VID
VSS, VIL,
or VIH
VSS, VIL,
or VIH
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRRB
tRSP
RY/BY#
Figure 23.
52
Temporary Sector Group Unprotect Timing Diagram
Am29LV640MT/B
February 12, 2004
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
VID
VIH
RESET#
SA, A6,
A1, A0
Valid*
Valid*
Sector Group Protect or Unprotect
Data
60h
60h
Valid*
Verify
40h
Status
Sector Group Protect: 150 µs,
Sector Group Unprotect: 15 ms
1 µs
CE#
WE#
OE#
* For sector group protect, A6–A0 = 0xx0010. For sector group unprotect, A6–A0 = 1xx0010.
Figure 24.
February 12, 2004
Sector Group Protect and Unprotect Timing Diagram
Am29LV640MT/B
53
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Parameter
Speed Options
90R
100,
100R
112,
112R
120,
120R
Unit
90
100
110
120
ns
JEDEC
Std.
Description
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
45
ns
tDVEH
tDS
Data Setup Time
Min
45
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
45
ns
tEHEL
tCPH
CE# Pulse Width High
Min
30
ns
Write Buffer Program Operation (Notes 2, 3)
Typ
352
µs
Per Byte
Typ
11
µs
Per Word
Typ
22
µs
Per Byte
Typ
8.8
µs
Per Word
Typ
17.6
µs
Effective Write Buffer Program
Operation (Notes 2, 4)
tWHWH1
tWHWH1
Accelerated Effective Write Buffer
Program Operation (Notes 2, 4)
Byte
Single Word/Byte Program
Operation (Note 2)
Word
Accelerated Single Word/Byte
Programming Operation (Note 2)
tWHWH2
tWHWH2
tRH
tPOLL
100
Typ
µs
100
Byte
90
Typ
Word
µs
90
Sector Erase Operation (Note 2)
Typ
0.5
sec
RESET High Time Before Write (Note 1)
Min
50
ns
Program Valid Before Status Polling (Note 6)
Max
4
µs
Notes:
1. Not 100% tested.
2.
3.
4.
5.
6.
54
See the “Erase And Programming Performance” section for more information.
For 1–16 words programmed/1–32 bytes programmed.
Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
When using the program suspend/resume feature, if the suspend command is issued within tPOLL, tPOLL must be fully re-applied
upon resuming the programming operation. If the suspend command is issued after tPOLL, tPOLL is not required again prior to
reading the status bits upon resuming.
Am29LV640MT/B
February 12, 2004
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tPOLL
tGHEL
OE#
tWHWH1 or 2
tCP
CE#
tWS
tCPH
tBUSY
tDS
tDH
DQ7#,
DQ15
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device.
4. Waveforms are for the word mode.
Figure 25.
February 12, 2004
Alternate CE# Controlled Write (Erase/Program)
Operation Timings
Am29LV640MT/B
55
A D V A N C E
I N F O R M A T I O N
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Sector Erase Time
0.5
15
sec
Chip Erase Time
32
128
sec
Byte
100
TBD
µs
Word
100
TBD
µs
Byte
90
TBD
µs
Word
90
TBD
µs
352
TBD
µs
Per Byte
11
TBD
µs
Per Word
22
TBD
µs
282
TBD
µs
8.8
TBD
µs
Comments
Single Word/Byte Program Time (Note 3)
Accelerated Single Word/Byte Program Time
(Note 3)
Total Write Buffer Program Time (Note 4)
Effective Write Buffer Program Time (Note 5)
Total Accelerated Effective Write Buffer
Program Time (Note 4)
Effective Accelerated Write Buffer PRogram
Time (Note 4)
Byte
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC. Programming specifications assume that
all bits are programmed to 00h.
2. Maximum values are measured at VCC = 3.0 V, worst case temperature. Maximum values are valid up to and including 100,000
program/erase cycles.
3. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
4. For 1-16 words or 1-32 bytes programmed in a single write buffer programming operation.
5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence(s) for the program command. See Tables 12 and
11 for further information on command definitions.
8. The device has a minimum erase and program cycle endurance of 100,000 cycles.
LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
–100 mA
+100 mA
VCC Current
Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
TSOP PIN AND BGA PACKAGE CAPACITANCE
Parameter Symbol
Parameter Description
CIN
Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
Test Setup
VIN = 0
VOUT = 0
VIN = 0
Typ
Max
Unit
TSOP
6
7.5
pF
Fine-pitch BGA
4.2
5.0
pF
TSOP
8.5
12
pF
Fine-pitch BGA
5.4
6.5
pF
TSOP
7.5
9
pF
Fine-pitch BGA
3.9
4.7
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
56
Am29LV640MT/B
February 12, 2004
A D V A N C E
I N F O R M A T I O N
DATA RETENTION
Parameter Description
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
Minimum Pattern Data Retention Time
February 12, 2004
Am29LV640MT/B
57
A D V A N C E
I N F O R M A T I O N
PHYSICAL DIMENSIONS
TS 048—48-Pin Standard Pinout Thin Small Outline Package (TSOP)
Dwg rev AA; 10/99
58
Am29LV640MT/B
February 12, 2004
A D V A N C E
I N F O R M A T I O N
PHYSICAL DIMENSIONS
FBE063—63-Ball Fine-pitch Ball Grid Array (FBGA) 12 x 11 mm Package
Dwg rev AF; 10/99
February 12, 2004
Am29LV640MT/B
59
A D V A N C E
I N F O R M A T I O N
PHYSICAL DIMENSIONS
LAA064—64-Ball Fortified Ball Grid Array (FBGA) 13 x 11 mm Package
60
Am29LV640MT/B
February 12, 2004
REVISION SUMMARY
Revision A (April 26, 2002)
Revision B+3 (September 19, 2002)
Initial release.
Ordering Information
Revision B (May 23, 2002)
Deleted FI from Valid Combinations Table.
Changed packaging from 64-ball FBGA to 64-ball Fortified BGA.
Revision B+4 (October 15, 2002)
Connection Diagrams
Changed Block Diagram: Moved VIO from RY/BY# to
Input/Output Buffers.
Changed from 56-Pin Standard TSOP to 48-Pin Standard TSOP.
Changed Note about WP#/ACC pin to indicate internal
pullup to VCC.
Product Selector Guide
Revision B+1 (July 31, 2002)
Added regulated OPNs.
Revision C (December 5, 2002)
MIRRORBIT 64 MBIT Device Family
Added 64 Fortified BGA to LV640MU device.
Alternate CE# Controlled Erase and Program
Operations
Added tRH parameter to table.
Erase and Program Operations
Added tBUSY parameter to table.
SecSi Sector Flash Memory Region, and Enter
SecSi Sector/Exit SecSi Sector Command
Sequence
Noted that the ACC function and unlock bypass modes
are not available when the SecSi sector is enabled.
Byte/Word Program Command Sequence, Sector
Erase Command Sequence, and Chip Erase Command Sequence
Added RY/BY# to waveform.
Noted that the SecSi Sector, autoselect, and CFI functions are unavailable when a program or erase operation is in progress.
TSOP and BGA PIN Capacitance
Common Flash Memory Interface (CFI)
Added the FBGA package.
Changed CFI website address.
Program Suspend/Program Resume Command
Sequence
Command Definitions
Figure 16. Program Operation Timings
Changed 15 µs typical to maximum and added 5 µs
typical.
Erase Suspend/Erase Resume Commands
Changed typical from 20 µs to 5 µs and added a maximum of 20 µs.
Changed wording in last sentence of first paragraph
from, “...resets the device to reading array data.” to
...”may place the device to an unknown state. A reset
command is then required to return the device to reading array data.”
CMOS Compatible
Revision B+2 (August 9, 2002)
Added ILR parameter to table.
Valid Combinations for TSOP Package
Added 100R, 110R, and 120R OPNs.
Removed VIL, VIH, VOL, and VOH from table and added
V IL1 , V IH1 , V IL2 , V IH2 , V OL , V OH1 , and V OH2 from the
CMOS table in the Am29LV640MH/L datasheet.
Valid Combinations for BGA Package
Changed VIH1 and VIH2 minimum to 1.9.
Added 100R, 110R, and 120R OPNs.
Removed typos in notes.
CMOS Compatible
AC Characteristics and Read-Only Operations
Added Note 8.
Changed the Chip Enable to Output High Z and Output Enable to Output High Z Speed Options from 30
ns to 16 ns.
Special package handling instructions
Modified the special handling wording.
DC Characteristics table
Deleted the IACC specification row.
CFI
Changed text in the third paragraph of CFI to read
“reading array data.”
Word/Byte Configuration
Changed BYTE# Switching Low to Output High Z
Speed Options from 30 ns to 16 ns.
Customer Lockable: SecSi Sector NOT
Programmed or Protected at the factory.
Added second bullet, SecSi sector-protect.
A D V A N C E
I N F O R M A T I O N
Revision C+1 (February 16, 2003)
Erase and Programming Performance
Modified table and notes, inserted values for Typical.
Distinctive Characteristics
Corrected performance characteristics.
Revision C+3 (February 12, 2004)
Product Selector Guide
Erase Suspend/Erase Resume Commands
Added note 2.
Added note reference to erase operation.
Connection Diagrams
Table 12 & Table 13: Command Definitions
Changed pin F1 to NC.
Modified the Addr information for both Program/Erase
Suspend and Program/Erase Resume from BA to
XXX.
Ordering Information
Corrected Valid Combinations table.
AC Characteristics - Erase and Program
Operations, and Alternate CE# Controlled Erase
and Program Operations
Added Note.
AC Characteristics
Added tPOLL information.
Removed 93, 93R speed option.
Added Note
Input values in the tWHWH 1 and tWHWH 2 parameters in
the Erase and Program Options table that were previously TBD. Also, added note 5.
AC Characteristics Figures - Program Operation
Timings, Data# Polling Timings (During Embedded
Algorithms, and Alternate CE# Controlled Write
(Erase/Program) Operation Timings
Updated figures with tPOLL information.
Input values in the tWHWH 1 and tWHWH 2 parameters in
the Alternate CE# Controlled Erase and Program Options table that were previously TBD. Also, added note
5.
Erase and Programming Performance
Input values into table that were previously TBD.
Added note 3 and 4
Revision C+2 (June 12, 2003)
Ordering Information
Added 90R speed grade.
62
Am29LV640MT/B
February 12, 2004
A D V A N C E
I N F O R M A T I O N
Trademarks
Copyright © 2004 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
February 12, 2004
Am29LV640MT/B
63
Representatives in U.S. and Canada
Sales Offices and Representatives
North America
ALABAMA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 5 6 ) 8 3 0 - 9 1 9 2
ARIZONA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 6 0 2 ) 24 2 - 4 4 0 0
CALIFORNIA,
Irvine . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 4 9 ) 4 5 0 - 7 5 0 0
Sunnyvale . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 4 0 8 ) 7 3 2 - 24 0 0
COLORADO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 3 0 3 ) 74 1 - 2 9 0 0
CONNECTICUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 0 3 ) 2 6 4 - 7 8 0 0
FLORIDA,
Clearwater . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 2 7 ) 7 9 3 - 0 0 5 5
Miami (Lakes) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 3 0 5 ) 8 2 0 - 1 1 1 3
GEORGIA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 7 0 ) 8 1 4 - 0 2 2 4
ILLINOIS,
Chicago . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 6 3 0 ) 7 7 3 - 4 4 2 2
MASSACHUSETTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 8 1 ) 2 1 3 - 6 4 0 0
MICHIGAN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 4 8 ) 4 7 1 - 6 2 9 4
MINNESOTA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 6 1 2 ) 74 5 - 0 0 0 5
NEW JERSEY,
Chatham . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 7 3 ) 7 0 1 - 1 7 7 7
NEW YORK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 1 6 ) 4 2 5 - 8 0 5 0
NORTH CAROLINA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 1 9 ) 8 4 0 - 8 0 8 0
OREGON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 5 0 3 ) 24 5 - 0 0 8 0
PENNSYLVANIA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 1 5 ) 3 4 0 - 1 1 8 7
SOUTH DAKOTA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 6 0 5 ) 69 2 - 5 7 7 7
TEXAS,
Austin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 5 1 2 ) 3 4 6 - 7 8 3 0
Dallas . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 7 2 ) 9 8 5 - 1 3 4 4
Houston . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 8 1 ) 3 76 - 8 0 8 4
VIRGINIA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 0 3 ) 7 3 6 - 9 5 6 8
International
AUSTRALIA, North Ryde . . . . . . . . . . . . . . . . . . . . . . . T E L ( 6 1 ) 2 - 8 8 - 7 7 7 - 2 2 2
BELGIUM, Antwerpen . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 2 ) 3 - 2 4 8 - 4 3 - 0 0
BRAZIL, San Paulo . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 5 5 ) 1 1 - 5 5 0 1 - 2 1 0 5
CHINA,
Beijing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 6 ) 1 0 - 6 5 1 0 - 2 1 8 8
Shanghai . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 6 ) 2 1 - 6 3 5 - 0 0 8 3 8
Shenzhen . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 6 ) 7 5 5 - 24 6 - 1 5 5 0
FINLAND, Helsinki . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 5 8 ) 8 8 1 - 3 1 1 7
FRANCE, Paris . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 3 ) - 1 - 4 9 7 5 1 0 1 0
GERMANY,
Bad Homburg . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 9 ) - 6 1 7 2 - 9 2 6 7 0
Munich . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 9 ) - 8 9 - 4 5 0 5 3 0
HONG KONG, Causeway Bay . . . . . . . . . . . . . . . . . . . T E L ( 8 5 ) 2 - 2 9 5 6 - 0 3 8 8
ITALY, Milan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 9 ) - 0 2 - 3 8 1 9 6 1
INDIA, New Delhi . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 9 1 ) 1 1 - 6 2 3 - 8 6 2 0
JAPAN,
Osaka . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 1 ) 6 - 6 2 4 3 - 3 2 5 0
Tokyo . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 1 ) 3 - 3 3 4 6 - 7 6 0 0
KOREA, Seoul . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 2 ) 2 - 3 4 6 8 - 2 6 0 0
RUSSIA, Moscow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(7)-095-795-06-22
SWEDEN, Stockholm . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 6 ) 8 - 5 62 - 5 4 0 - 0 0
TAIWAN,Taipei . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 8 6 ) 2 - 8 7 7 3 - 1 5 5 5
UNITED KINGDOM,
Frimley . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 4 ) 1 2 7 6 - 8 0 3 1 0 0
Haydock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 4 ) 1 9 4 2 - 2 7 2 8 8 8
Advanced Micro Devices reserves the right to make changes in its product without notice
in order to improve design or performance characteristics.The performance
characteristics listed in this document are guaranteed by specific tests, guard banding,
design and other practices common to the industry. For specific testing details, contact
your local AMD sales representative.The company assumes no responsibility for the use of
any circuits described herein.
© Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD Arrow logo and combination thereof, are trademarks of
Advanced Micro Devices, Inc. Other product names are for informational purposes only
and may be trademarks of their respective companies.
es
ARIZONA,
Tempe - Centaur . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 4 8 0 ) 8 3 9 - 2 3 2 0
CALIFORNIA,
Calabasas - Centaur . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 8 1 8 ) 8 7 8 - 5 8 0 0
Irvine - Centaur . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 4 9 ) 2 6 1 - 2 1 2 3
San Diego - Centaur. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 8 5 8 ) 2 7 8 - 4 9 5 0
Santa Clara - Fourfront. . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 4 0 8 ) 3 5 0 - 4 8 0 0
CANADA,
Burnaby, B.C. - Davetek Marketing. . . . . . . . . . . . . . . . . . . . ( 6 0 4 ) 4 3 0 - 3 6 8 0
Calgary, Alberta - Davetek Marketing. . . . . . . . . . . . . . . . . ( 4 0 3 ) 2 8 3 - 3 5 7 7
Kanata, Ontario - J-Squared Tech. . . . . . . . . . . . . . . . . . . . ( 6 1 3 ) 5 9 2 - 9 5 4 0
Mississauga, Ontario - J-Squared Tech. . . . . . . . . . . . . . . . . . ( 9 0 5 ) 6 7 2 - 2 0 3 0
St Laurent, Quebec - J-Squared Tech. . . . . . . . . . . . . . . . ( 5 1 4 ) 7 4 7 - 1 2 1 1
COLORADO,
Golden - Compass Marketing . . . . . . . . . . . . . . . . . . . . . . ( 3 0 3 ) 2 7 7 - 0 4 5 6
FLORIDA,
Melbourne - Marathon Technical Sales . . . . . . . . . . . . . . . . ( 3 2 1 ) 7 2 8 - 7 7 0 6
Ft. Lauderdale - Marathon Technical Sales . . . . . . . . . . . . . . ( 9 5 4 ) 5 2 7 - 4 9 4 9
Orlando - Marathon Technical Sales . . . . . . . . . . . . . . . . . . ( 4 0 7 ) 8 7 2 - 5 7 7 5
St. Petersburg - Marathon Technical Sales . . . . . . . . . . . . . . ( 7 2 7 ) 8 9 4 - 3 6 0 3
GEORGIA,
Duluth - Quantum Marketing . . . . . . . . . . . . . . . . . . . . . ( 6 7 8 ) 5 8 4 - 1 1 2 8
ILLINOIS,
Skokie - Industrial Reps, Inc. . . . . . . . . . . . . . . . . . . . . . . . . ( 8 4 7 ) 9 6 7 - 8 4 3 0
INDIANA,
Kokomo - SAI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 6 5 ) 4 5 7 - 7 2 4 1
IOWA,
Cedar Rapids - Lorenz Sales . . . . . . . . . . . . . . . . . . . . . . ( 3 1 9 ) 2 9 4 - 1 0 0 0
KANSAS,
Lenexa - Lorenz Sales . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 1 3 ) 4 6 9 - 1 3 1 2
MASSACHUSETTS,
Burlington - Synergy Associates . . . . . . . . . . . . . . . . . . . . . ( 7 8 1 ) 2 3 8 - 0 8 7 0
MICHIGAN,
Brighton - SAI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 8 1 0 ) 2 2 7 - 0 0 0 7
MINNESOTA,
St. Paul - Cahill, Schmitz & Cahill, Inc. . . . . . . . . . . . . . . . . . ( 6 5 1 ) 69 9 - 0 2 0 0
MISSOURI,
St. Louis - Lorenz Sales . . . . . . . . . . . . . . . . . . . . . . . . . . ( 3 1 4 ) 9 9 7 - 4 5 5 8
NEW JERSEY,
Mt. Laurel - SJ Associates . . . . . . . . . . . . . . . . . . . . . . . . . ( 8 5 6 ) 8 6 6 - 1 2 3 4
NEW YORK,
Buffalo - Nycom, Inc. . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 1 6 ) 7 4 1 - 7 1 1 6
East Syracuse - Nycom, Inc. . . . . . . . . . . . . . . . . . . . . . . ( 3 1 5 ) 4 3 7 - 8 3 4 3
Pittsford - Nycom, Inc. . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 1 6 ) 5 8 6 - 3 6 6 0
Rockville Centre - SJ Associates . . . . . . . . . . . . . . . . . . . . ( 5 1 6 ) 5 3 6 - 4 2 4 2
NORTH CAROLINA,
Raleigh - Quantum Marketing . . . . . . . . . . . . . . . . . . . . . . ( 9 1 9 ) 8 4 6 - 5 7 2 8
OHIO,
Middleburg Hts - Dolfuss Root & Co. . . . . . . . . . . . . . . . . ( 4 4 0 ) 8 1 6 - 1 6 6 0
Powell - Dolfuss Root & Co. . . . . . . . . . . . . . . . . . . . . . . ( 6 1 4 ) 7 8 1 - 0 7 2 5
Vandalia - Dolfuss Root & Co. . . . . . . . . . . . . . . . . . . . . . ( 9 3 7 ) 8 9 8 - 9 6 1 0
Westerville - Dolfuss Root & Co. . . . . . . . . . . . . . . . . . . ( 6 1 4 ) 5 2 3 - 1 9 9 0
OREGON,
Lake Oswego - I Squared, Inc. . . . . . . . . . . . . . . . . . . . . . . ( 5 0 3 ) 6 7 0 - 0 5 5 7
UTAH,
Murray - Front Range Marketing . . . . . . . . . . . . . . . . . . . . ( 8 0 1 ) 2 8 8 - 2 5 0 0
VIRGINIA,
Glen Burnie - Coherent Solution, Inc. . . . . . . . . . . . . . . . . ( 4 1 0 ) 7 6 1 - 2 2 5 5
WASHINGTON,
Kirkland - I Squared, Inc. . . . . . . . . . . . . . . . . . . . . . . . . . . ( 4 2 5 ) 8 2 2 - 9 2 2 0
WISCONSIN,
Pewaukee - Industrial Representatives . . . . . . . . . . . . . . . . ( 2 6 2 ) 5 74 - 9 3 9 3
Representatives in Latin America
ARGENTINA,
Capital Federal Argentina/WW Rep. . . . . . . . . . . . . . . . . . . .54-11)4373-0655
CHILE,
Santiago - LatinRep/WWRep. . . . . . . . . . . . . . . . . . . . . . . . . .(+562)264-0993
COLUMBIA,
Bogota - Dimser. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 5 7 1 ) 4 1 0 - 4 1 8 2
MEXICO,
Guadalajara - LatinRep/WW Rep. . . . . . . . . . . . . . . . . . . . ( 5 2 3 ) 8 1 7 - 3 9 0 0
Mexico City - LatinRep/WW Rep. . . . . . . . . . . . . . . . . . . . ( 5 2 5 ) 7 5 2 - 2 7 2 7
Monterrey - LatinRep/WW Rep. . . . . . . . . . . . . . . . . . . . . ( 5 2 8 ) 3 69 - 6 8 2 8
PUERTO RICO,
Boqueron - Infitronics. . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 8 7 ) 8 5 1 - 6 0 0 0
One AMD Place, P.O. Box 3453, Sunnyvale, CA 94088-3453 408-732-2400
TWX 910-339-9280 TELEX 34-6306 800-538-8450 http://www.amd.com
©2003 Advanced Micro Devices, Inc.
01/03
Printed in USA