IRFIB6N60A, SiHFIB6N60A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low gate charge Qg results in simple drive requirement Available • Improved gate, avalanche and dynamic dV/dt ruggedness Available • Fully characterized capacitance and avalanche voltage and current • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 600 RDS(on) () VGS = 10 V Qg max. (nC) 0.75 49 Qgs (nC) 13 Qgd (nC) 20 Configuration Single Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. D TO-220 FULLPAK G G D S APPLICATIONS • • • • S N-Channel MOSFET Switch mode power supply (SMPS) Uninterruptible power supply High speed power switching High voltage isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) TYPICAL SMPS TOPOLOGIES • Single transistor forward • Active clamped forward ORDERING INFORMATION Package TO-220 FULLPAK IRFIB6N60APbF Lead (Pb)-free SiHFIB6N60A-E3 IRFIB6N60A SnPb SiHFIB6N60A ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ± 30 VGS at 10 V Continuous Drain Current Pulsed Drain TC = 25 °C TC = 100 °C Current a ID IDM Linear Derating Factor UNIT V 5.5 3.5 37 0.48 W/°C mJ Single Pulse Avalanche Energy b EAS 290 Repetitive Avalanche Current a IAR 9.2 A Repetitive Avalanche Energy a EAR 6.0 mJ Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dt c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) Mounting Torque d for 10 s 6-32 or M3 screw PD 60 W dV/dt 5.0 V/ns TJ, Tstg -55 to +150 300 °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 6.8 mH, RG = 25 , IAS = 9.2 A (see fig. 12). c. ISD 9.2 A, dI/dt 50 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. S16-0763-Rev. D, 02-May-16 Document Number: 91175 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFIB6N60A, SiHFIB6N60A www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 65 Maximum Junction-to-Case (Drain) RthJC - 2.1 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS VGS = 0 V, ID = 250 μA 600 - - V VDS/TJ Reference to 25 °C, ID = 1 mA d - 660 - mV/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 25 VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 250 Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance μA - - 0.75 gfs VDS = 25 V, ID = 5.5 A 5.5 - - S VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1400 - - 180 - - 7.1 - VDS = 1.0 V, f = 1.0 MHz - 1957 - VDS = 480 V, f = 1.0 MHz - 49 - - 96 - - - 49 - - 13 - - 20 - 13 - - 25 - - 30 - - 22 - 0.5 - 3.2 - - 5.5 - - 37 RDS(on) ID = 3.3 A b VGS = 10 V Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Coss VGS = 0 V Coss eff. Effective Output Capacitance Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Gate Input Resistance Rg VDS = 0 V to 480 VGS = 10 V Vc ID = 9.2 A, VDS = 400 V, see fig. 6 and 13 b VDD = 300 V, ID = 9.2 A, RG = 9.1, RD = 35.5, see fig. 10 b f = 1 MHz, open drain pF nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Current a Body Diode Voltage IS ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 9.2 A, VGS = 0 V b TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μs b - - 1.5 V - 530 800 ns - 3.0 4.4 μC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. d. t = 60 s, f = 60 Hz. S16-0763-Rev. D, 02-May-16 Document Number: 91175 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFIB6N60A, SiHFIB6N60A www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 1 4.7V 20µs PULSE WIDTH TJ = 25 °C 0.1 0.1 1 10 10 TJ = 25 ° C 1 0.1 4.0 100 VDS , Drain-to-Source Voltage (V) I D , Drain-to-Source Current (A) 10 4.7V 20µs PULSE WIDTH TJ = 150 °C 10 VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics S16-0763-Rev. D, 02-May-16 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 3.0 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V 1 5.0 6.0 7.0 8.0 9.0 10.0 Fig. 3 - Typical Transfer Characteristics TOP 1 V DS = 50V 20µs PULSE WIDTH VGS , Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics 100 TJ = 150 ° C ID = 9.2A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91175 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFIB6N60A, SiHFIB6N60A www.vishay.com 2400 100 ISD , Reverse Drain Current (A) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 2000 C, Capacitance (pF) Vishay Siliconix iss 1600 oss 1200 800 rss 400 0 10 TJ = 150 ° C 1 TJ = 25 ° C 0.1 0.2 A 1 10 100 1000 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 1.0 1.2 Fig. 7 - Typical Source-Drain Diode Forward Voltage 1000 ID = 9.2A OPERATION IN THIS AREA LIMITED BY RDS(on) VDS = 480V VDS = 300V VDS = 120V 16 100 I D , Drain Current (A) VGS , Gate-to-Source Voltage (V) 0.7 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) 20 V GS = 0 V 0.5 12 8 10us 10 100us 1ms 1 10ms 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 10 20 30 40 50 QG , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage S16-0763-Rev. D, 02-May-16 0.1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91175 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFIB6N60A, SiHFIB6N60A www.vishay.com Vishay Siliconix RD VDS 6.0 VGS ID , Drain Current (A) D.U.T. RG 5.0 + - VDD 10 V 4.0 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 3.0 Fig. 10a - Switching Time Test Circuit 2.0 VDS 90 % 1.0 0.0 25 50 75 100 125 150 10 % VGS TC , Case Temperature ( °C) t d(on) Fig. 9 - Maximum Drain Current vs. Case Temperature tr t d(off) t f Fig. 10b - Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 P DM 0.05 0.1 t1 0.02 t2 0.01 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S16-0763-Rev. D, 02-May-16 Document Number: 91175 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFIB6N60A, SiHFIB6N60A www.vishay.com Vishay Siliconix V DS tp 15 V Driver L VDS D.U.T. RG + A - VDD IAS 20 V tp A 0.01 Ω I AS Fig. 12b - Unclamped Inductive Waveforms EAS , Single Pulse Avalanche Energy (mJ) Fig. 12a - Unclamped Inductive Test Circuit 600 TOP 500 BOTTOM ID 4.1A 5.8A 9.2A 400 300 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. QG 50 kΩ 12 V 0.2 µF 0.3 µF 10 V QGS + Q GD D.U.T. VG - VDS VGS 3 mA Charge Fig. 13a - Basic Gate Charge Waveform S16-0763-Rev. D, 02-May-16 IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91175 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFIB6N60A, SiHFIB6N60A www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91175. S16-0763-Rev. D, 02-May-16 Document Number: 91175 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 1 Document Number: 91000