April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. _______________________________________________________________________________ D G S Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter BS170 VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS < 1MΩ) 60 V VGSS Gate-Source Voltage ± 20 V ID Drain Current - Continuous Units 500 500 1200 800 Maximum Power Dissipation 830 300 mW Derate Above 25°C 6.6 2.4 mW/°C - Pulsed PD MMBF170 mA TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C TL Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds 300 °C THERMAL CHARACTERISTICS RθJA Thermal Resistacne, Junction-to-Ambient © 1997 Fairchild Semiconductor Corporation 150 417 °C/W BS170 Rev. C / MMBF170 Rev. D Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Type Min 60 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 µA All IDSS Zero Gate Voltage Drain Current VDS = 25 V, VGS = 0 V All 0.5 µA V IGSSF Gate - Body Leakage, Forward VGS = 15 V, VDS = 0 V All 10 nA All 2.1 3 V 5 ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 200 mA All 1.2 gFS Forward Transconductance VDS = 10 V, ID = 200 mA BS170 320 MMBF170 320 All 24 40 pF All 17 30 pF All 7 10 pF ns VDS > 2 VDS(on), ID = 200 mA 0.8 Ω mS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 10 V, VGS = 0 V, f = 1.0 MHz SWITCHING CHARACTERISTICS (Note 1) ton toff Turn-On Time Turn-Off Time VDD = 25 V, ID = 200 m A, VGS = 10 V, RGEN = 25 Ω BS170 10 VDD = 25 V, ID = 500 mA, VGS = 10 V, RGEN = 50 Ω MMBF170 10 VDD = 25 V, ID = 200 m A, VGS = 10 V, RGEN = 25 Ω BS170 10 VDD = 25 V, ID = 500 mA, VGS = 10 V, RGEN = 50 Ω MMBF170 10 ns Note: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. BS170 Rev. C / MMBF170 Rev. D Typical Electrical Characteristics BS170 / MMBF170 2 3 9.0 V GS =4.0V 8.0 , DRAIN-SOURCE CURRENT (A) 7.0 RDS(on) , NORMALIZED 1.5 6.0 1 5.0 0.5 I D 4.0 DRAIN-SOURCE ON-RESISTANCE VGS = 10V 3.0 0 0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 5.0 6 .0 2 7.0 8.0 1.5 9.0 10 1 0.5 5 0 0.8 1.2 I D , DRAIN CURRENT (A) 1.6 2 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 2 3 1.75 V GS = 10V R DS(on) , NORMALIZED ID = 500mA 1.5 1.25 1 0.75 0.5 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.4 Figure 1. On-Region Characteristics. V G S = 10V 2.5 TJ = 125°C 2 1.5 25°C 1 -55°C 0.5 0 150 0 Figure 3. On-Resistance Variation with Temperature. 0.4 0.8 1.2 I D , DRAIN CURRENT (A) 1.6 2 Figure 4. On-Resistance Variation with Drain Current and Temperature. 1.1 VDS = 10V T J = -55°C 25°C 125°C Vth , NORMALIZED 1.6 1.2 0.8 0.4 0 0 2 V GS 4 6 8 , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 10 GATE-SOURCE THRESHOLD VOLTAGE 2 ID , DRAIN CURRENT (A) 4.5 2.5 V DS = VGS I D = 1 mA 1.05 1 0.95 0.9 0.85 0.8 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 Figure 6. Gate Threshold Variation with Temperature. BS170 Rev. C / MMBF170 Rev. D Typical Electrical Characteristics (continued) BS170 / MMBF170 2 ID = 100µA 1.05 1.025 1 0.975 0.95 0.925 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 0.5 TJ = 125°C 0.1 25°C 0.05 -55°C 0.01 0.005 0.001 0.2 150 0.4 0.6 V SD 0.8 1 1.2 1.4 , BODY DIODE FORWARD VOLTAGE (V) Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. Figure 7. Breakdown Voltage Variation with Temperature. 10 60 40 V GS , GATE-SOURCE VOLTAGE (V) 20 C oss 10 5 C rss f = 1 MHz V GS = 0V 2 V DS = 25V ID = 5 0 0 m A C iss CAPACITANCE (pF) V GS = 0V 1 1.075 IS , REVERSE DRAIN CURRENT (A) , NORMALIZED DSS BV DRAIN-SOURCE BREAKDOWN VOLTAGE 1.1 1 8 6 4 2 0 1 2 3 V DS 5 10 20 30 50 0 0.4 0.8 , DRAIN TO SOURCE VOLTAGE (V) Figure 9. Capacitance Characteristics. t on t d(on) R GEN t d(off) tf 90% 90% V OUT Output, Vout 10% 10% 90% DUT G Input, Vin S Figure 11. Switching Test Circuit. 2 t off tr RL D VGS 1.6 Figure 10. Gate Charge Characteristics. VDD V IN 1.2 Q g , GATE CHARGE (nC) Inverted 50% 50% 10% Pulse Width Figure 12. Switching Waveforms. BS170 Rev. C / MMBF170 Rev. D Typical Electrical Characteristics (continued) 10 ID , DRAIN CURRENT (A) 1 0.5 R ( DS ) ON Lim it 1m 3 2 0u 10 s 1 I D , DRAIN CURRENT (A) 3 2 s 10 ms 10 0m s 1s 0.1 10 0.05 s DC V GS = 10V SINGLE PULSE RD S( O it 1m 10 0.1 10 0.05 0.01 0m 0u s s ms s 1s 10 s DC V GS = 10V SINGLE PULSE T A = 25°C 0.01 0.5 Lim N) T A = 25°C 0.005 0.005 1 2 5 10 20 30 V DS , DRAIN-SOURCE VOLTAGE (V) Figure 13. BS170 Maximum Safe Operating Area. 60 80 1 2 5 10 20 30 V DS , DRAIN-SOURCE VOLTAGE (V) 60 80 Figure 14. MMBF170 Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.5 R θJA (t) = r(t) * R θJA θJA = (See Datasheet) 0.2 0.2 R 0.1 0.1 P(pk) 0.05 0.05 t1 0.02 JA (t) Single Pulse 0.02 0.01 0.0001 0.001 t2 TJ - T A = P * Rθ 0.01 Duty Cycle, D = t1 /t2 0.01 0.1 t 1, TIME (sec) 1 10 100 300 Figure 15. TO-92, BS170 Transient Thermal Response Curve. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0.2 0.1 0.05 R θJA (t) = r(t) * R θJA 0.1 R θJA = (See Datasheet) 0.05 0.02 P(pk) 0.01 t1 0.01 t2 Single Pulse TJ - T A = P * Rθ JA (t) Duty Cycle, D = t1 /t2 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 300 Figure 16. SOT-23, MMBF170 Transient Thermal Response Curve. BS170 Rev. C / MMBF170 Rev. D