Plastic-Encapsulate Transistors FEATURES C1815 (NPN) Complementary type the PNP transistor A1015 is recommended. MARKING: HF MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 150 mA Collector Power Dissipation PC 0.2 W Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 1. BASE 2. EMITTER SOT-23 3. COLLECTO unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage VCBO IC= 100uA, Collector-emitter breakdown voltage VCEO Emitter-base breakdown voltage VEBO IE=0 Min Typ Max Unit 60 V IC= 0.1mA, IB=0 50 V IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 uA Collector cut-off current ICE VCE=50V, IB=0 0.1 uA Emitter cut-off current O IEB VEB= 5V, IC=0 0.1 uA DC current gain O hFE VCE= 6V, IC= 2mA 130 400 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA 0.25 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 10mA 1 V fT Transition frequency CLASSIFICATION OF VCE=10V, IC= 1mA, f=30MHz 80 MHz hFE Rank L H Range 130-200 200-400 GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P2-P1 Plastic-Encapsulate Transistors C1815 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P2-P2