IRFHM831PbF HEXFET® Power MOSFET VDSS 30 V 7.8 m 7.3 nC Rg (typical) 0.5 ID (@TC (Bottom) = 25°C) 40 A RDS(on) max (@ VGS = 10V) Qg (typical) PQFN 3.3 x 3.3 mm Applications Control MOSFET for Buck Converters Features Low Charge (typical 7.3nC) Low Thermal Resistance to PCB (<4.7°C/W) 100% Rg tested Low Profile (< 1.0 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number Package Type IRFHM831TRPbF IRFHM831TR2PBF PQFN 3.3mm x 3.3mm PQFN 3.3mm x 3.3mm Benefits Lower Switching Losses Enable better thermal dissipation Increased Reliability results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note EOL notice # 259 Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 30 VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 14 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 11 ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 40 ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V 28 IDM Pulsed Drain Current 96 PD @TA = 25°C Power Dissipation 2.5 PD @TC(Bottom) = 25°C Power Dissipation 27 Linear Derating Factor TJ Operating Junction and TSTG Storage Temperature Range 0.02 -55 to + 150 Units V A W W/°C °C Notes through are on page 9 1 2016-2-26 IRFHM831PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS BVDSS/TJ RDS(on) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) VGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Min. 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 82 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.02 6.6 10.7 1.8 -6.8 ––– ––– ––– ––– ––– 16 7.3 1.7 0.9 2.5 2.2 3.4 5.1 0.5 6.9 12 6.2 4.7 1050 190 80 Max. ––– ––– 7.8 12.6 2.35 ––– 1 150 100 -100 ––– ––– 11 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Units Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 12A m VGS = 4.5V, ID = 12A V V = VGS, ID = 25µA mV/°C DS VDS = 24V, VGS = 0V µA VDS = 24V,VGS = 0V,TJ = 125°C VGS = 20V nA VGS = -20V S VDS = 15V, ID = 12A VGS = 10V, VDS = 15V, ID = 12A nC nC ns pF VDS = 15V VGS = 4.5V ID = 12A See Fig.17 & 18 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 12A RG= 1.8 See Fig.15 VGS = 0V VDS = 25V ƒ = 1.0MHz Avalanche Characteristics EAS (Thermally limited) Parameter Single Pulse Avalanche Energy Typ. ––– Max. 50 Units mJ IAR Avalanche Current ––– 12 A Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) Diode Forward Voltage VSD Reverse Recovery Time Reverse Recovery Charge trr Qrr Min. Typ. Max. ––– ––– 40 Units Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 12A, VGS = 0V D A ––– ––– 96 ––– ––– 1.0 V ––– ––– 15 16 22 24 ns nC G S TJ = 25°C, IF = 12A, VDD = 15V di/dt = 300A/µs Thermal Resistance Parameter RJC (Bottom) Junction-to-Case Typ. ––– RJC (Top) Junction-to-Case ––– 44 RJA Junction-to-Ambient ––– 50 RJA (<10s) Junction-to-Ambient ––– 32 2 Max. 4.7 Units °C/W 2016-2-26 IRFHM831PbF 1000 60µs PULSE WIDTH Tj = 25°C TOP 100 BOTTOM VGS 10V 8.0V 4.5V 3.8V 3.5V 3.3V 3.0V 2.8V 60µs PULSE WIDTH Tj = 150°C ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 1000 10 TOP 100 BOTTOM VGS 10V 8.0V 4.5V 3.8V 3.5V 3.3V 3.0V 2.8V 10 2.8V 2.8V 1 1 0.1 1 10 0.1 100 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics TJ = 150°C 10 TJ = 25°C 1 VDS = 15V 60µs PULSE WIDTH 0.1 ID = 12A VGS = 10V 1.5 1.0 0.5 2.0 3.0 4.0 5.0 -60 -40 -20 VGS, Gate-to-Source Voltage (V) 10000 40 60 80 100 120 140 160 14 VGS, Gate-to-Source Voltage (V) Coss = Cds + Cgd Ciss Coss Crss 100 20 Fig 4. Normalized On-Resistance vs. Temperature VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd 1000 0 T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics C, Capacitance (pF) 10 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) ID= 12A 12 VDS = 24V VDS = 15V VDS = 6.0V 10 8 6 4 2 0 10 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 1 0 5 10 15 20 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 2016-2-26 IRFHM831PbF 1000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 100.0 10.0 TJ = 150°C TJ = 25°C 1.0 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 10 1msec 1 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 100µsec 10msec 0.1 0.2 0.4 0.6 0.8 1.0 0.1 1 VSD , Source-to-Drain Voltage (V) 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 50 3.0 VGS(th) Gate threshold Voltage (V) LIMITED BY PACKAGE ID, Drain Current (A) 40 30 20 10 0 2.5 2.0 ID = 1.0A ID = 1.0mA ID = 250µA 1.5 ID = 25µA 1.0 0.5 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) TJ , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage Vs. Temperature 10 Thermal Response ( Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 2016-2-26 40 200 EAS, Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m) IRFHM831PbF ID = 12A 35 30 25 20 15 TJ = 125°C 10 5 TJ = 25°C 0 2 4 6 8 10 12 14 16 18 ID 3.1A 6.4A BOTTOM 12A TOP 160 120 80 40 0 20 25 VGS, Gate-to-Source Voltage (V) 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On– Resistance vs. Gate Voltage V(BR)DSS tp 15V L VDS DRIVER D.U.T RG IAS 20V tp + V - DD 0.01 Fig 14a. Unclamped Inductive Test Circuit Fig 15a. Switching Time Test Circuit 5 A I AS Fig 14b. Unclamped Inductive Waveforms Fig 15b. Switching Time Waveforms 2016-2-26 IRFHM831PbF Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 17. Gate Charge Test Circuit 6 Qgd Qgodr Fig 18. Gate Charge Waveform 2016-2-26 IRFHM831PbF PQFN 3.3 x 3.3 Outline “B” Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 3.3 x 3.3 Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX ?YWW? XXXXX PART NUMBER MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 2016-2-26 IRFHM831PbF PQFN 3.3 x 3.3 Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS CODE Ao Bo Ko DIMENSION (MM) MIN MAX 3.50 3.70 3.50 3.70 1.10 1.30 7.90 P1 11.80 W 12.30 W1 Qty Reel Diameter QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE CODE Ao Bo Ko W P1 DIMENSION (INCH) MIN MAX .138 .146 .138 .146 .043 .051 8.10 12.20 12.50 .311 .465 .484 .319 .480 .492 4000 13 Inches DESCRIPTION Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2016-2-26 IRFHM831PbF Qualification Information† Qualification Level Moisture Sensitivity Level RoHS Compliant Industrial (per JEDEC JESD47F†† guidelines) PQFN 3.3mm x 3.3mm MSL1 (per JEDEC J-STD-020D††) Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.69mH, RG = 50, IAS = 12A. Pulse width 400µs; duty cycle 2%. R is measured at TJ of approximately 90°C. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf Calculated continuous current based on maximum allowable junction temperature. Package is limited to 40A by production test capability. 9 2016-2-26 IRFHM831PbF Revision History Date Comments 5/14/2014 Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259) Updated package outline on page 7. Updated Tape and Reel on page 8. Updated data sheet with new IR corporate template. 6/5/2014 Updated schematic on page1 2/26/2016 Updated datasheet with corporate template Removed package outline “Punched Version” on page 7. Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 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Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 10 2016-2-26