ASI AM82731 Npn rf power transistor Datasheet

AM82731
NPN RF POWER TRANSISTOR
PACKAGE STYLE 400 2L FLG
DESCRIPTION:
The AM82731 is a Common Base
Device Designed for Pulsed S-Band
Radar Amplifier Applications.
FEATURES INCLUDE:
• Input/Output Matching
• Gold Metallization
• Emitter Ballasting
MAXIMUM RATINGS
IC
0.9 A
VCBO
50 V
PDISS
27 W @ TC = 25 OC
TJ
-55 OC to+200 OC
TSTG
-55 OC to+200 OC
θJC
6.5 OC/W
CHARACTERISTICS
1 = COLLECTOR
2 & 4 = BASE
3 = EMITTER
O
TC = 25 C
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
UNITS
BVCBO
IC = 2.0 mA
50
V
BVCER
IC = 2.0 mA
50
V
ICES
VCE = 2.0 mA
BVEBO
IE = 1.0 mA
2.0
hFE
VCE = 5 V
IC = 200 mA
PG
ηC
VCE = 30 V POUT = 3.0 W
Pulse Width = 100 µS
f = 2700 to 3100 MHz
Duty Cycle = 10%
mA
3.5
V
10
---
5.7
6.5
35
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
dB
%
REV. B
1/1
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