HYR16xx49G 64MB & 128MB Rambus RIMM Modules Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) Overview The Direct Rambus™ RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required. The Direct Rambus RIMM module consists of 288 Mbit Direct Rambus DRAM (Direct RDRAM™) devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600 MHz to 800 MHz transfer rates while using conventional system and board design technologies. Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes). The RDRAM architecture enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed, memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The RDRAM's 32-bank architecture supports up to four simultaneous transactions per device. Form Factor These family of 64MByte and 128MByte Rambus RIMM modules are offered in a 184-pad 1 mm edge connector pad pitch form factor suitable for 184 contact RIMM connectors. The RIMM module is suitable for desktop and other system applications. The next figure shows an eight device Rambus RIMM module without heat spreader. Features • 64 MByte and 128 MByte non-ECC versions • Gold plated edge connector pad contacts • High speed 800 & 600 MHz RDRAM storage • Serial Presence Detect (SPD) support • 184 edge connector pads with 1 mm pad spacing • Operates from a 2.5 V supply (± 5%) • Low power and powerdown self refresh modes • Maximum module PCB size: 133.5 mm × 31.75 mm × 1.37 mm (5.25” × 1.25” × 0.05”) • Separate Row and Column buses for higher efficiency • Each RDRAM has 32 banks, for a total of 128 or 64 banks on each 128 MB or 64 MB module respectively. , INFINEON Technologies 1 9.01 HYR16xx49G 64MB & 128MB Rambus RIMM Modules Part Number Designators Organization Capacity I/O Frequency [MHz] Part Designator # of RDRAMs RDRAM Density 288 Mbit 64 MB 32 MB × 16 64 MB 600 HYR163249G-653 2 32 MB × 16 64 MB 800 HYR163249G-840 2 64 MB × 16 128 MB 600 HYR166449G-653 4 64 MB × 16 128 MB 800 HYR166449G-845 4 128 MB INFINEON Technologies 2 288 Mbit 9.01 HYR16xx49G 64MB & 128MB Rambus RIMM Modules Pin Configuration Pin Name PIN Pin Name PIN Pin Name PIN Pin Name A1 PIN GND B1 GND A47 N.C. B47 N.C. A2 LDQA8 B2 LDQA7 A48 N.C. B48 N.C. A3 GND B3 GND A48 N.C. B49 N.C. A4 LDQA6 B4 LDQA5 A50 N.C. B50 N.C. A5 GND B5 GND A51 VREF B51 VREF A6 LDQA4 B6 LDQA3 A52 GND B52 GND A7 GND B7 GND A53 SCL B53 SA0 A8 LDQA2 B8 LDQA1 A54 VDD B54 VDD A9 GND B9 GND A55 SDA B55 SA1 A10 LDQA0 B10 LCFM A56 SVdd B56 SVdd A11 GND B11 GND A57 SWP B57 SA2 A12 LCTMN B12 LCFMN A58 VDD B58 VDD A13 GND B13 GND A59 RSCK B59 RCMD A14 LCTM B14 N.C. A60 GND B60 GND A15 GND B15 GND A61 RDQB7 B61 RDQB8 A16 N.C. B16 LROW2 A62 GND B62 GND A17 GND B17 GND A63 RDQB5 B63 RDQB6 A18 LROW1 B18 LROW0 A64 GND B64 GND A19 GND B19 GND A65 RDQB3 B65 RDQB4 A20 LCOL4 B20 LCOL3 A66 GND B66 GND A21 GND B21 GND A67 RDQB1 B67 RDQB2 A22 LCOL2 B22 LCOL1 A68 GND B68 GND A23 GND B23 GND A69 RCOL0 B69 RDQB0 A24 LCOL0 B24 LDQB0 A70 GND B70 GND A25 GND B25 GND A71 RCOL2 B71 RCOL1 A26 LDQB1 B26 LDQB2 A72 GND B72 GND A27 GND B27 GND A73 RCOL4 B73 RCOL3 A28 LDQB3 B28 LDQB4 A74 GND B74 GND A29 GND B29 GND A75 RROW1 B75 RROW0 A30 LDQB5 B30 LDQB6 A76 GND B76 GND A31 GND B31 GND A77 N.C. B77 RROW2 A32 LDQB7 B32 LDQB8 A78 GND B78 GND A33 GND B33 GND A79 RCTM B79 N.C. INFINEON Technologies 3 9.01 HYR16xx49G 64MB & 128MB Rambus RIMM Modules Pin Configuration (cont’d) Pin Name PIN Pin Name PIN Pin Name PIN Pin Name A34 PIN LSCK B34 LCMD A80 GND B80 GND A35 VCMOS B35 VCMOS A81 RCTMN B81 RCFMN A36 SOUT B36 SIN A82 GND B82 GND A37 VCMOS B37 VCMOS A83 RDQA0 B83 RCFM A38 N.C. B38 N.C. A84 GND B84 GND A39 GND B39 GND A85 RDQA2 B85 RDQA1 A40 N.C. B40 N.C. A86 GND B86 GND A41 VDD B41 VDD A87 RDQA4 B87 RDQA3 A42 VDD B42 VDD A88 GND B88 GND A43 N.C. B43 N.C. A89 RDQA6 B89 RDQA5 A44 N.C. B44 N.C. A90 GND B90 GND A45 N.C. B45 N.C. A91 RDQA8 B91 RDQA7 A46 N.C. B46 N.C. A92 GND B92 GND INFINEON Technologies 4 9.01 HYR16xx49G 64MB & 128MB Rambus RIMM Modules Module Connector Pad Description Module Connector Pads I/O Type Description GND Signal A1, A3, A5, A7, A9, A11, A13, A15, A17, A19, A21, A23, A25, A27, A29, A31, A33, A39, A52, A60, A62, A64, A66, A68, A70, A72, A74, A76, A78, A80, A82, A84, A86, A88, A90, A92, B1, B3, B5, B7, B9, B11, B13, B15, B17, B19, B21, B23, B25, B27, B29, B31, B33, B39, B52, B60, B62, B64, B66, B68, B70, B72, B74, B76, B78, B80, B82, B84, B86, B88, B90, B92 – – Ground reference for RDRAM core and interface. 72 PCB connector pads. LCFM B10 I RSL Clock from master. Interface clock used for receiving RSL signals from the Channel. Positive polarity. LCFMN B12 I RSL Clock from master. Interface clock used for receiving RSL signals from the Channel. Negative polarity. LCMD B34 I VCMOS Serial Command used to read from and write to the control registers. Also used for power management. LCOL4 … LCOL0 A20, B20, A22, B22, A24 I RSL Column bus. 5-bit bus containing control and address information for column accesses. LCTM A14 I RSL Clock to master. Interface clock used for transmitting RSL signals to the Channel. Positive polarity. LCTMN A12 I RSL Clock to master. Interface clock used for transmitting RSL signals to the Channel. Negative polarity. LDQA8 … LDQA0 A2, B2, A4, B4, A6, B6, A8, B8, A10 I/O RSL Data bus A. A 9-bit bus carrying a byte of read or write data between the Channel and the RDRAM. LDQA8 is non-functional on modules with x16 RDRAM devices. INFINEON Technologies 5 9.01 HYR16xx49G 64MB & 128MB Rambus RIMM Modules Module Connector Pad Description (cont’d) Module Connector Pads I/O Type Description LDQB8 … LDQB0 Signal B32, A32, B30, A30, B28, A28, B26, A26, B24 I/O RSL Data bus B. A 9-bit bus carrying a byte of read or write data between the Channel and the RDRAM. LDQB8 is non-functional on modules with x16 RDRAM devices. LROW2 … LROW0 B16, A18, B18 I RSL Row bus. 3-bit bus containing control and address information for row accesses. LSCK A34 I VCMOS Serial Clock input. Clock source used to read from and write to the RDRAM control registers. N.C. A16, B14, A38, B38, A40, B40, A77, B79;A43, B43, A44, B44, A45, B45, A46, B46, A47, B47, A48, B48, A49, B49, A50, B50 – – These pads are not connected. These connector pads are reserved for future use. RCFM B83 I RSL Clock from master. Interface clock used for receiving RSL signals from the Channel. Positive polarity. RCFMN B81 I RSL Clock from master. Interface clock used for receiving RSL signals from the Channel. Negative polarity. RCMD B59 I VCMOS Serial Command Input used to read from and write to the control registers. Also used for power management. RCOL4 … RCOL0 A73, B73, A71, B71, A69 I RSL Column bus. 5-bit bus containing control and address information for column accesses. RCTM A79 I RSL Clock to master. Interface clock used for transmitting RSL signals to the Channel. Positive polarity. RCTMN A81 I RSL Clock to master. Interface clock used for transmitting RSL signals to the Channel. Negative polarity. RDQA8 … RDQA0 A91, B91, A89, B89, A87, B87, A85, B85, A83 I/O RSL Data bus A. A 9-bit bus carrying a byte of read or write data between the Channel and the RDRAM. RDQA8 is non-functional on modules with x16 RDRAM devices. INFINEON Technologies 6 9.01 HYR16xx49G 64MB & 128MB Rambus RIMM Modules Module Connector Pad Description (cont’d) Module Connector Pads I/O Type Description RDQB8 … RDQB0 Signal B61, A61, B63, A63, B65, A65, B67, A67, B69 I/O RSL Data bus B. A 9-bit bus carrying a byte of read or write data between the Channel and the RDRAM. RDQB8 is non-functional on modules with x16 RDRAM devices. RROW2 … RROW0 B77, A75, B75 I RSL Row bus. 3-bit bus containing control and address information for row accesses. RSCK A59 I VCMOS Serial Clock input. Clock source used to read from and write to the RDRAM control registers. SA0 B53 I SVDD Serial Presence Detect Address 0. SA1 B55 I SVDD Serial Presence Detect Address 1. SA2 B57 I SVDD Serial Presence Detect Address 2. SCL A53 I SVDD Serial Presence Detect Clock. SDA A55 I/O SVDD Serial Presence Detect Data (Open Collector I/O). SIN B36 I/O VCMOS Serial I/O for reading from and writing to the control registers. Attaches to SIO0 of the first RDRAM on the module. SOUT A36 I/O VCMOS Serial I/O for reading from and writing to the control registers. Attaches to SIO1 of the last RDRAM on the module. SVDD A56, B56 – – SPD Voltage. Used for signals SCL, SDA, SWE, SA0, SA1 and SA2. SWP A57 I SVDD Serial Presence Detect Write Protect (active high). When low, the SPD can be written as well as read. VCMOS A35, B35, A37, B37 – – CMOS I/O Voltage. Used for signals CMD, SCK, SIN, SOUT. VDD A41, A42, A54, A58, B41, B42, B54, B58 – – Supply voltage for the RDRAM core and interface logic. VREF A51, B51 – – Logic threshold reference voltage for RSL signals. INFINEON Technologies 7 9.01 HYR16xx49G 64MB & 128MB Rambus RIMM Modules LDQA8 LDQA7 LDQA6 LDQA5 LDQA4 LDQA3 LDQA2 LDQA1 LDQA0 LCFM LCFMN LCTM LCTMN LROW2 LROW1 LROW0 LCOL4 LCOL3 LCOL2 LCOL1 LCOL0 LDQB0 LDQB1 LDQB2 LDQB3 LDQB4 LDQB5 LDQB6 LDQB7 LDQB8 SIN LSCK LCMD VREF Vdd DQA8 DQA7 DQA6 DQA5 DQA4 DQA3 DQA2 DQA1 DQA0 CFM CFMN CTM CTMN ROW2 ROW1 ROW0 COL4 COL3 COL2 COL1 COL0 DQB0 DQB1 DQB2 DQB3 DQB4 DQB5 DQB6 DQB7 DQB8 DQA8 DQA7 DQA6 DQA5 DQA4 DQA3 DQA2 DQA1 DQA0 CFM CFMN CTM CTMN ROW2 ROW1 ROW0 COL4 COL3 COL2 COL1 COL0 DQB0 DQB1 DQB2 DQB3 DQB4 DQB5 DQB6 DQB7 DQB8 VCMOS DQA8 DQA7 DQA6 DQA5 DQA4 DQA3 DQA2 DQA1 DQA0 CFM CFMN CTM CTMN ROW2 ROW1 ROW0 COL4 COL3 COL2 COL1 COL0 DQB0 DQB1 DQB2 DQB3 DQB4 DQB5 DQB6 DQB7 DQB8 DQA8 DQA7 DQA6 DQA5 DQA4 DQA3 DQA2 DQA1 DQA0 CFM CFMN CTM CTMN ROW2 ROW1 ROW0 COL4 COL3 COL2 COL1 COL0 DQB0 DQB1 DQB2 DQB3 DQB4 DQB5 DQB6 DQB7 DQB8 2 128MB 4 RSCK SOUT RDQA8 RDQA7 RDQA6 RDQA5 RDQA4 RDQA3 RDQA2 RDQA1 RDQA0 RCFM RCFMN RCTM RCTMN RROW2 RROW1 RROW0 RCOL4 RCOL3 RCOL2 RCOL1 RCOL0 RDQB0 RDQB1 RDQB2 RDQB3 RDQB4 RDQB5 RDQB6 RDQB7 RDQB8 64MB RCMD Gnd A[0:2] 0.1µF U0 SWP SDA SVdd Vcc SDA SCL SCL Serial Presence Detect SVdd Note 1: Rambus Channel signals form a loop through the RIMM module, with the exception of the SIO chain. Note 2: See Serial Presence Detection Specification for information on the SPD device and its contents. U3 9.01 8 INFINEON Technologies Direct RDRAM (288 Mb) N Module Capacity Direct RDRAM (288 Mb) UN SIO1 SIO0 SCK CMD VREF GND . . . 1 per 2 RDRAMs 0.1 µF Direct RDRAM (288 Mb) SIO1 SIO0 SCK CMD VREF 1 per 2 RDRAMs puls one near Connector 0.1 µF U2 GND SIO1 SIO0 SCK CMD VREF GND Direct RDRAM (288 Mb) 2 per RDRAM 0.1 µF U1 SIO1 SIO0 SCK CMD VREF Vref SA[0:2] RIMM Module Functional Diagram HYR16xx49G 64MB & 128MB Rambus RIMM Modules Absolute Maximum Ratings Symbo Parameter l Limit Values min. max. – 0.3 VDD + 0.3 Unit VI,ABS Voltage applied to any RSL or CMOS signal pad with respect to GND VDD,ABS Voltage on V DD with respect to GND – 0.5 VDD + 1.0 V TSTORE Storage temperature – 50 100 °C V DC Recommended Electrical Conditions Symbol Parameter and Conditions Limit Values VDD Supply voltage VCMOS CMOS I/O power supply at pad for 2.5 V controllers: CMOS I/O power supply at pad for 1.8 V controllers: Unit min. max. 2.50 – 0.13 2.50 + 0.13 V 2.5 – 0.13 2.5 + 0.25 V 1.8 – 0.1 1.8 + 0.2 V VREF Reference voltage 1.4 – 0.2 1.4 + 0.2 V VIL RSL input low voltage VREF – 0.5 VREF – 0.2 V VIH RSL input high voltage VREF + 0.2 VREF + 0.5 V VIL,CMOS CMOS input low voltage – 0.3 0.5 VCMOS – 0.25 V VIH,CMOS CMOS input high voltage 0.5 V CMOS + 0.25 VCMOS + 0.7 V VOL,CMOS CMOS output low voltage @ IOL,CMOS = 1 mA – 0.3 V VOH,CMOS CMOS output high voltage @ IOH,CMOS = – 0.25 mA VCMOS – 0.3 – V IREF VREF current @ VREF,MAX – 10 × no. RDRAMs1) 10 × no. RDRAMs1) µA ISCK,CMD CMOS input leakage current @ (0 ≤ VCMOS ≤ VDD ) – 10 × no. RDRAMs1) 10 × no. RDRAMs1) µA ISIN,SOUT CMOS input leakage current @ (0 ≤ VCMOS ≤ VDD ) – 10.0 10.0 µA 1) The table below shows the number of 288 Mbit RDRAM devices contained in a RIMM module of listed memory storage capacity. RIMM Module Capacity 64MB 128 MB Number of 288 Mbit RDRAM devices 2 4 INFINEON Technologies 9 9.01 HYR16xx49G 64MB & 128MB Rambus RIMM Modules AC Electrical Specifications Symbol Parameter and Conditions Limit Values Unit min. typ. max. Z Module Impedance 25.2 28 30.8 Ω TPD Average clock delay from finger of all RSL clock nets (CTM, CTMN, CFM and CFMN) – – See Table1) ns ∆TPD Propagation delay variation of RSL signals with respect to TPD2)3 ) for 4 and 8 device modules – 21 – 21 ps Propagation delay variation of RSL signals with respect to TPD2)3 ) for 16 device modules – 24 – 24 ps ∆TPD-CMOS Propagation delay variation of SCK and CMD signals with respect to an average clock delay2) – 100 – 100 ps VA /VIN Attenuation Limit – – See Table1) % VXF/VIN Forward crosstalk coefficient (300 ps input rise time @ 20%-80%) – – See Table1) % VXB /VIN Backward crosstalk coefficient (300 ps input rise time @ 20%-80%) – – See Table1) % 1) Table below lists parameters and specifications for different storage capacity RIMM Modules that use 288 Mbit RDRAM devices. 2) Average clock delay is defined as the average delay from finger to finger of all RSL clock nets (CTM, CTMN, .....CFM and CFMN). 3.) If the RIMM module meets the folowwing specifications, then it is compliant to the specification. If the RIMM .....module does not meet these specifications, then the specification can be adjusted by the “Adjusted ∆TPD.....Specification” table. Adjusted ∆TPD Specfication Symbol ∆TPD Parameter and Conditions Adjusted Min/Max Absolute Min /Max Unit Propagation delay variation of RSL signals a with respect to TPD for 4 and 8 device modules +/-[17+(18*N*∆Z0)] -30 30 ps Propagation delay variation of RSL signals with respect to TPD for 16 device modules -50 50 ps +/-[24+(18*N*∆Z0)] a) Where: N = Nuber of RDRAM devices installed on the RIMm module DZ0 = delta Z0% =(max Z0 - minZ0)/(min Z0) (max Z= and min Z0 are obtained from the loaded (high impedance) impedance coupons of all RSL layers on the modules) INFINEON Technologies 10 9.01 HYR16xx49G 64MB & 128MB Rambus RIMM Modules 64 MB 2 128 MB 4 AC Electrical Specifications for RIMM Modules Parameter and Conditions for -800, 711& -600 RIMM Modules max. max. Propagation Delay, all RSL signals -800 1.28 1.28 ns Propagation Delay, all RSL signals -600 1.28 1.28 ns Attenuation Limit -800 12 12 % Attenuation Limit -600 10.5 10.5 % VXF/VIN Forward crosstalk coefficient (300 ps input rise time @ 20% - 80%) -800, -600 2 2 % VXB /VIN Backward crosstalk coefficient (300 ps input rise time @ 20%-80%) -800, -600 1.5 1.5 % RDC DC Resistance Limit -800, -600 0.6 0.6 Ω Symbo RIMM Module Capacity: No. of 288 Mbit RDRAMs: l TPD VA /VIN INFINEON Technologies 11 Unit 9.01 HYR16xx49G 64MB & 128MB Rambus RIMM Modules RIMM Module Capacity: No. of 288 Mbit RDRAMs: 128 MB 4 IDD 64 MB 2 RIMM Module Current Profile max. max. Unit RIMM Modules Power Conditionsa) Freq. IDD1 One RDRAM in Readb, balance in NAP mode -800 -600 794 812 mA IDD2 One RDRAM in Readb, balance in Standby mode -800 1038 1257 mA -600 764 974 mA One RDRAM in Read , balance in Active mode -800 1107 1465 mA -600 946 1258 mA One RDRAM in Write, balance in Active mode -800 932 940 mA -600 794 812 mA IDD5 One RDRAM in Write, balance in Standby mode -800 1038 1257 mA -600 764 974 mA IDD6 One RDRAM in Write, balance in Active mode -800 1107 1465 mA -600 946 1258 mA IDD3 IDD4 b 932 940 mA a) Actual power will depend on individual memory controller and usage pattern. Power does not include Refresh Current. b) I/O power is a function of the percentage of 1’s, to add I/O power for 50% 1’s for a x 16 need to add 257mA per module for the following: VDD = 2.5V, VTERM = 1.8V, VREF = 1.4V and VDIL = VREF = 0.5V. INFINEON Technologies 12 9.01 HYR16xx49G 64MB & 128MB Rambus RIMM Modules The following defines the RIMM module dimensions. All units are in millimeters. Fig.2 : RIMM Module PCB Physical Description RIMM Module PCB Physical Description Dimension Description Limit Values min. nom. max. Unit A PCB length 133.20 5.244 133.35 5.250 133.50 5.256 mm in B PCB height – – 31.75 1.25 mm in C Center-center pad width from pad A1 to A46, A47 to A92, B1 to B46 or B47 to B92 – – 45.00 1.770 mm in D Spacing from PCB left edge to connector key notch 55.10 2.169 55.175 2.172 55.25 2.175 mm in E Spacing from contact pad PCB edge to side edge retainer notch – – 17.78 0.700 mm in F PCB thickness 1.17 0.046 1.27 0.050 1.37 0.054 mm in G Heat spreader thickness from PCB surface (one side) to heat spreader top surface – – 3.02 0.119 mm in INFINEON Technologies 13 9.01 HYR16xx49G 64MB & 128MB Rambus RIMM Modules Standard RIMM Module Marking The RIMM modules available from INFINEON Technoligies will be marked per Figure 3 below. This marking will help OEMs and users identify the Rambus RIMM modules when used in specific system applications. This will assist OEMs or users to specify and correctly verify if the correct RIMM modules are installed in their systems. In the diagram, a label is shown attached to the RIMM module’s heat spreader. F G A B D E C Fig.3 Standard RIMM Module Marking Label Field Description A Module Memory Capacity Number of 8-bit MBytes of RDRAM storage in RIMM module B Number of RDRAMs Number of RDRAM devices contained in the RIMM module 4, 2 RDRAM devices C ECC Support Indicates whether the RIMM module supports 8-bit (no ECC) or 9-bit (ECC) Bytes blank = 8-bit Byte – D Memory Speed Data transfer speed for RDRAM RIMM module 800, 600 MHz E tRAC Row Access Time -45, -53 ns F Part Number INFINEON part number G Manufacturing Code Date Code etc. INFINEON Technologies Marked Text 14 128MB, 64MB Unit MB 9.01