yangjie MBR20150CT Schottky diode Datasheet

RoHS
MBR2090CT THRU MBR20200CT
COMPLIANT
肖特基二极管SCHOTTKY Diodes
■外形尺寸和印记
Features
耐正向浪涌电流能力高
High surge forward current capability
● 低功耗,大电流
Low Power loss, High efficiency
● Io
20.0A
90-200V
● VRRM
Outline Dimensions and Mark
B
A
0
2
2
O
T
■特征
●
.17(4.31)
.131(3.34)
.429(10.9)
MAX
.129(3.27)
.087(2.22)
.200(5.10)
.159(4.04)
.055(1.40)
.045(1.14)
.61(15.5)
.571(14.5)
PIN1 2
3
.126(3.19)
.084(2.14)
.176(4.46)
.124(3.16)
.576(14.62)
.514(13.06)
.037(0.94)
.027(0.68)
Applications
■用途
● 快速整流用
High speed switching
DIA
.121(3.07)
.079(2.01)
.025(0.64)
.011(0.28)
.121(3.07)
.079(2.01)
PIN1
PIN2
CASE
PIN3
■极限值(绝对最大额定值)
Dimensions in inches and (millimeters)
Limiting Values(Absolute Maximum Rating)
参数名称
Item
符号
单位
Symbol Unit
反向重复峰值电压
Repetitive Peak Reverse Voltage
平均整流输出电流
Average Rectified Output Current
正向(不重复)浪涌电流
Surge(Non-repetitive)Forward Current
正向浪涌电流的平方对电流浪涌持
续
时间的积分值
Current Squared Time
贮存温度
Storage Temperature
结温
Junction Temperature
VRRM
V
Io
A
IFSM
A
MBR
条件
Conditions
2090CT
20100CT
20150CT
20200CT
90
100
150
200
正弦半波60Hz,电阻负载,Tc(Fig.1)
60HZ Half-sine wave, Resistance load,
Tc(Fig.1)
60HZ正弦波,一个周期,Ta=25℃
60HZ sine wave, 1 cycle, Ta=25℃
20
150
1ms≤t<8.3ms Tj=25℃,单个二极管
A2s 1ms≤t<8.3ms Tj=25℃,Rating
of per diode
I2t
Tstg
Tj
94
-55 ~ +150
℃
℃
在正向直流条件下,没有施加反向压降,
通电≤1h(图示1)①
IN DC Forward Mode-Forward
Operations,without reverse bias, t ≤1 h
(Fig. 1)①
-55 ~ +150
■电特性 (Ta=25℃ 除非另有规定)
Electrical Characteristics(Ta=25℃ Unless otherwise specified)
参数名称
Item
正向峰值电压
Peak Forward Voltage
反向峰值电流
Peak Reverse Current
热阻
Thermal Resistance
符号
Symbol
VFM
单位
Unit
V
IRRM1
IRRM2
RθJ-C
mA
℃/W
MBR
测试条件
Test Condition
2090CT
I FM =10A
VRM =VRRM
20100CT
0.85
20150CT
20200CT
0.9
0.95
Ta=25℃
0.05
Ta=100℃
1
结和壳之间
Between junction and case
2.0
NOTE
■ 备注
①Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test.
S-B120
Rev.1.1, 29-Nov-14
扬州扬杰电子科技股份有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
MBR2090CT THRU MBR20200CT
■ 特性曲线(典型) Characteristics(Typical)
图2:耐正向浪涌电流曲线
FIG2:Surge Forward Current Capadility
IFSM(A)
Io(A)
图1:正向电流降额曲线
FIG1:Forward Current Derating Curve
28.0
24.0
175
150
20.0
125
16.0
TC measure point
IN DC
12.0
8.3ms Single
Half Since-Wave
JEDEC Method
100
8.0
75
4.0
50
0
50
0
150
Tc(℃)
100
25
1
2
5
10
20
50
100
Number of Cycles at 60Hz
60
IRRM(uA)
IF(A)
图3:正向电压曲线
FIG3:Instantaneous Forward Voltage
40
20
图4:反向电流曲线
FIG4:Typical Reverse Characteristics
1000
Tj=100 ℃
90~100V
100
10
5.0
150V
10
200V
1.0
1.0
0.5
Tj=25℃
0.2
0.1
Ta=25℃
0
0.1 0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9 1.0
1.1
1.2
VF(V)
0.1
0
20
40
60
80
100
V RRM (%)
S-B120
Rev.1.1, 29-Nov-14
扬州扬杰电子科技股份有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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