CHENMKO ENTERPRISE CO.,LTD CHM3055ZPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 4.0 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-73/SOT-223 FEATURE * Small package. (SC-73/SOT-223 ) * High density cell design for extremely low RDS(ON). 1.65+0.15 6.50+0.20 * Rugged and reliable. 0.90+0.05 2.0+0.3 CONSTRUCTION * N-Channel Enhancement 0.70+0.10 0.70+0.10 2.30+0.1 0.70+0.10 7.0+0.3 3.5+0.2 3.00+0.10 2.0+0.3 0.9+0.2 0.27+0.05 0.01~0.10 4.60+0.1 1 1 Gate D (3) CIRCUIT 3 2 2 Source 3 Drain ( Heat Sink ) (1) G Dimensions in millimeters S (2) Absolute Maximum Ratings Symbol SC-73/SOT-223 TA = 25°C unless otherwise noted Parameter CHM3055ZPT Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V Maximum Drain Current - Continuous 4.0 ID A - Pulsed PD Maximum Power Dissipation TJ TSTG (Note 3) 25 3000 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 42 °C/W 2008-04 ELECTRICAL CHARACTERISTIC ( CHM3055ZPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min 60 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS VGS(th) 10 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA 4 V 100 mΩ (Note 2) Gate Threshold Voltage RDS(ON) g FS V VDS = VGS, ID = 250 µA 2 75 VGS=10V, ID=4.0A Forward Transconductance 3 VDS =15V , ID = 4.0A S 4 Dynamic Characteristics Ciss 335 Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0 MHz 150 pF 40 SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge 10 VDS=48V, ID=4.0A 13 nC 2.4 VGS=10V 4.0 t on Turn-On Time V DD= 25V 17 25 tr Rise Time I D = 1.2A , VGS = 10 V 24 50 t off Turn-Off Time RGEN= 50 Ω 41 65 tf Fall Time 33 60 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = 4.0A , VGS = 0 V (Note 1) (Note 2) 2.5 A 1.2 V