Chenmko CHM3055ZPT N-channel enhancement mode field effect transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
CHM3055ZPT
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts
CURRENT 4.0 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
SC-73/SOT-223
FEATURE
* Small package. (SC-73/SOT-223 )
* High density cell design for extremely low RDS(ON).
1.65+0.15
6.50+0.20
* Rugged and reliable.
0.90+0.05
2.0+0.3
CONSTRUCTION
* N-Channel Enhancement
0.70+0.10
0.70+0.10
2.30+0.1
0.70+0.10
7.0+0.3
3.5+0.2
3.00+0.10
2.0+0.3
0.9+0.2
0.27+0.05
0.01~0.10
4.60+0.1
1
1 Gate
D (3)
CIRCUIT
3
2
2 Source
3 Drain ( Heat Sink )
(1) G
Dimensions in millimeters
S (2)
Absolute Maximum Ratings
Symbol
SC-73/SOT-223
TA = 25°C unless otherwise noted
Parameter
CHM3055ZPT
Units
VDSS
Drain-Source Voltage
60
V
VGSS
Gate-Source Voltage
±20
V
Maximum Drain Current - Continuous
4.0
ID
A
- Pulsed
PD
Maximum Power Dissipation
TJ
TSTG
(Note 3)
25
3000
mW
Operating Temperature Range
-55 to 150
°C
Storage Temperature Range
-55 to 150
°C
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
42
°C/W
2008-04
ELECTRICAL CHARACTERISTIC ( CHM3055ZPT )
Electrical Characteristics T
Symbol
A
= 25°C unless otherwise noted
Parameter
Conditions
Min
60
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 48 V, VGS = 0 V
I GSSF
Gate-Body Leakage
I GSSR
Gate-Body Leakage
ON CHARACTERISTICS
VGS(th)
10
µA
VGS = 20V,VDS = 0 V
+100
nA
VGS = -20V, VDS = 0 V
-100
nA
4
V
100
mΩ
(Note 2)
Gate Threshold Voltage
RDS(ON)
g FS
V
VDS = VGS, ID = 250 µA
2
75
VGS=10V, ID=4.0A
Forward Transconductance
3
VDS =15V
, ID = 4.0A
S
4
Dynamic Characteristics
Ciss
335
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0 MHz
150
pF
40
SWITCHING CHARACTERISTICS (Note 4)
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
10
VDS=48V, ID=4.0A
13
nC
2.4
VGS=10V
4.0
t on
Turn-On Time
V DD= 25V
17
25
tr
Rise Time
I D = 1.2A , VGS = 10 V
24
50
t off
Turn-Off Time
RGEN= 50 Ω
41
65
tf
Fall Time
33
60
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
V SD
Drain-Source Diode Forward Voltage I S = 4.0A , VGS = 0 V
(Note 1)
(Note 2)
2.5
A
1.2
V
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