UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 3 DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed. 2 1 SOT-23 FEATURES (JEDEC TO-236) * High Collector-Emitter Voltage: VCEO=160V * High current gain ORDERING INFORMATION Ordering Number Note: MMBT5551G-x-AE3-R Pin Assignment: E: Emitter B: Base Package SOT-23 C: Collector Pin Assignment 1 2 3 E B C Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-010. I MMBT5551 NPN SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (TA= 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector -Base Voltage VCBO 180 V Collector -Emitter Voltage VCEO 160 V Emitter -Base Voltage VEBO 6 V DC Collector Current IC 600 mA Power Dissipation PD 350 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 357 104 ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage VCBO IC=100A, IE=0 Collector-Emitter Breakdown Voltage VCEO IC=1mA, IB=0 Emitter-Base Breakdown Voltage VEBO IE=10μA, IC=0 Collector Cut-off Current ICBO VCB=120V, IE=0 Emitter Cut-off Current IEBO VBE=4V, IC =0 VCE=5V, IC =1mA DC Current Gain(note) hFE VCE=5V, IC =10mA VCE=5V, IC =50mA IC=10mA, IB=1mA Collector-Emitter Saturation Voltage VCE(SAT) IC=50mA, IB=5mA IC=10mA, IB=1mA Base-Emitter Saturation Voltage VBE(SAT) IC=50mA, IB=5mA Current Gain Bandwidth Product fT VCE=10V, IC =10mA, f=100MHz Output Capacitance Cob VCB=10V, IE=0, f=1MHz IC=0.25mA, VCE=5V Noise Figure NF RS=1kΩ, f=10Hz ~ 15.7kHz Note: Pulse test: PW<300μs, Duty Cycle<2% UNIT °C/W °C/W MIN 180 160 6 80 80 80 100 TYP MAX UNIT V V V 50 nA 50 nA 160 400 0.15 0.2 1 1 300 6.0 V V V V MHz pF 8 dB CLASSIFICATION OF hFE RANK RANGE A 80-170 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw B 150-240 C 200-400 2 of 4 QW-R206-010. I MMBT5551 NPN SILICON TRANSISTOR ■ TYPICAL CHARACTERICS Fig.1 Collector Output Capacitance Fig.2 DC Current Gain 3 10 VCE=5V 8 f=1MHz IE=0 DC current Gain, hFE Capacitance, Cob (pF) 10 6 4 2 0 0 10 1 10 2 10 2 10 1 10 0 10 -1 10 Collector-Base Voltage (V) Saturation Voltage (V) Collector Current, Ic (mA) 1 10 VCE=5V 2 10 1 10 0.6 0.8 VBE(SAT) 0 10 -1 10 VCE(SAT) -1 10 1.0 0 10 1 10 2 10 3 10 Collector Current, Ic (mA) Fig.5 Current Gain-Bandwidth Product VCE=10V 2 10 1 10 10 1 S m 10 COLLECTOR CURRENT, Ic (A) 3 10 SAFE OPERATING AREA 0.1 0S 1. Current Gain-Bandwidth Product, fT (MHz) Base-Emitter Voltage (V) 0 10 0 10 3 10 Ic=10*IB -2 10 0 10 0.4 2 10 Fig.4 Saturation Voltage 3 10 0.2 1 10 Collector Current, Ic (mA) Fig.3 Base-Emitter on Voltage 0 0 10 0.01 0.001 1 10 2 10 3 10 Collector Current, Ic (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1 10 100 1000 Forward Voltage-VCE(V) 3 of 4 QW-R206-010. I MMBT5551 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-010. I