E-CMOS EC76P4KE13A Peak pulse 400w stand-off voltage 6.8 to 550v Datasheet

EC76P4KEXXX
Peak Pulse 400W
Stand-off Voltage 6.8 to 550V
Features
■ Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
EC76P4KE6.8 thru 550
■ Class passivated junction
■ 400W peak pulse power capability on 10/1000us
Waveform, repetition rate (duty cycle): 0.01%
■ Excellent clamping capability
■ Low incremental surge resistance
■ Very fast response soldering guaranteed: 265℃/10
Seconds, 0.375”(9.5mm) lead length, 5lbs. (2.3kg)
tension
Mechanical Date
■ Case : JEDEC DO-204AL(DO-41) molded plastic
Body over passivated junction
■ Terminals: Axial leads, solderable per MIL-STD-750,
Method 2026
■ Polarity: For unidirectional types the color band
denotes the cathode, which is positive with respect
to the anode under normal TVS operation
■ Mounting Position: Any
■ Weight : 0.012oz, 0.3g
Absolute Maximum Ratings
(Ratings at 25℃ambient temperature unless otherwise specified.)
Parameter
Symbol
Value
Unit
PPPM
400
W
IPPM
See Next Table
A
PM(AV)
1.0
W
IFSM
VF
40
3.5/5.0
A
V
Typical thermal resistance, junction to ambient, LLead =10mm
RθJA
100
℃/W
Typical thermal resistance, junction to lead
RθJL
60
℃/W
TJ,TSTG
-55 to +175
℃
Peak pulse power dissipation with a 10/1000 us waveform
Peak pulse current with a 10/1000 us waveform
Steady state power dissipation
(2)
at TL =75℃, lead lengths 0.375" (9.5mm)
(1,2)
(see Fig. 1)
(1)
Peak forward surge current 8.3ms single half sine-wave uni-directional only
(4)
Maximum instantaneous forward voltage @ 25A for unidirectional only
Operating junction and storage temperature range
(3)
Notes: 1. Non-repetitive current pulse, per Fig.3 and derated above TA=25℃ per Fig. 2.
2. Mounted on 1.6 x 1.6" (40 x 40 mm) per Fig. 5.
3. Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute
maximum
4. VF=3.5 V for devices of V(BR) < 220V, and VF=5.0 Volt max. for devices of V(BR)>220V
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 6
5A19N Rev.F001
EC76P4KEXXX
Peak Pulse 400W
Stand-off Voltage 6.8 to 550V
Electrical Characteristics
Device type
Breakdown
voltage
V (BR) (Volts)(1)
Min.
Max.
Test
current
at
IT (mA)
Stand-off
voltage
VWM
(Volts)
Maximum
reverse
leakage
at VWM
ID(3) (uA)
Maximum
peak
pulse
current
IPPM(2) (A)
Maximum
clamping
voltage
at IPPM
VC (Volts)
Maximum
temperature
coefficient
of VBR
(% /℃)
EC76P4KE6.8
6.12
7.48
10
5.50
1000
37.0
10.8
0.057
EC76P4KE6.8A
6.45
7.14
10
5.80
1000
38.1
10.5
0.057
EC76P4KE7.5
6.75
8.25
10
6.05
500
34.2
11.7
0.062
EC76P4KE7.5A
7.13
7.88
10
6.40
500
35.4
11.3
0.061
EC76P4KE8.2
7.38
9.02
10
6.63
200
32.0
12.5
0.065
EC76P4KE8.2A
7.79
8.61
10
7.02
200
33.1
12.1
0.065
EC76P4KE9.1
8.19
10.0
1.0
7.37
50
29.0
13.8
0.068
EC76P4KE9.1A
8.65
9.55
1.0
7.78
50
29.9
13.4
0.068
EC76P4KE10
9.00
11.0
1.0
8.10
10
26.7
15.0
0.073
EC76P4KE10A
9.50
10.5
1.0
8.55
10
27.6
14.5
0,073
EC76P4KE11
9.90
12.1
1.0
8.92
5.0
24.7
16.2
0.075
EC76P4KE11A
10.5
11.6
1.0
9.40
5.0
25.6
15.6
0.075
EC76P4KE12
10.8
13.2
1.0
9.72
1.0
23.1
17.3
0.076
EC76P4KE12A
11.4
12.6
1.0
10.2
1.0
24.0
16.7
0.078
EC76P4KE13
11.7
14.3
1.0
10.5
1.0
21.1
19.0
0.081
EC76P4KE13A
12.4
13.7
1.0
11.1
1.0
22.0
18.2
0.081
EC76P4KE15
13.5
16.5
1.0
12.1
1.0
18.2
22.0
0.084
EC76P4KE15A
14.3
15.8
1.0
12.8
1.0
18.9
21.2
0.084
EC76P4KE16
14.4
17.6
1.0
12.9
1.0
17.0
23.5
0.086
EC76P4KE16A
15.2
16.8
1.0
13.6
1.0
17.8
22.5
0.086
EC76P4KE18
16.2
19.8
1.0
14.5
1.0
15.1
26.5
0.088
EC76P4KE18A
17.1
18.9
1.0
15.3
1.0
15.9
25.2
0.088
EC76P4KE20
18.0
22.0
1.0
16.2
1.0
13.7
29.1
0.090
EC76P4KE20A
19.0
21.0
1.0
17.1
1.0
14.4
27.7
0.090
EC76P4KE22
19.8
24.2
1.0
17.8
1.0
12.5
31.9
0.092
EC76P4KE22A
20.9
23.1
1.0
18.8
1.0
13.1
30.6
0.092
EC76P4KE24
21.6
26.4
1.0
19.4
1.0
11.5
34.7
0.094
EC76P4KE24A
22.8
25.2
1.0
20.5
1.0
12.0
33.2
0.094
EC76P4KE27
24.3
29.7
1.0
21.8
1.0
10.2
39.1
0.096
EC76P4KE27A
25.7
28.4
1.0
23.1
1.0
10.7
37.5
0.096
EC76P4KE30
27.0
33.0
1.0
24.3
1.0
9.2
43.5
0.097
EC76P4KE30A
28.5
31.5
1.0
25.6
1.0
9.7
41.4
0.097
EC76P4KE33
29.7
36.3
1.0
26.8
1.0
8.4
47.7
0.098
EC76P4KE33A
31.4
34.7
1.0
28.2
1.0
8.8
45.7
0.098
EC76P4KE36
32.4
39.6
1.0
29.1
1.0
7.7
52.0
0.099
EC76P4KE36A
34.2
37.8
1.0
30.8
1.0
8.0
49.9
0.099
EC76P4KE39
35.1
42.9
1.0
31.6
1.0
7.1
56.4
0.100
EC76P4KE39A
37.1
41.0
1.0
33.3
1.0
7.4
53.9
0.100
EC76P4KE43
38.7
47.3
1.0
34.8
1.0
6.5
61.9
0.101
EC76P4KE43A
40.9
45.2
1.0
36.8
1.0
6.7
59.3
0.101
EC76P4KE47
42.3
51.7
1.0
38.1
1.0
5.9
67.8
0.101
EC76P4KE47A
44.7
49.4
1.0
40.2
1.0
6.2
64.8
0.101
E-CMOS Corp. (www.ecmos.com.tw)
Page 2 of 6
5A19N Rev.F001
EC76P4KEXXX
Peak Pulse 400W
Stand-off Voltage 6.8 to 550V
Device type
Breakdown
voltage
V (BR) (Volts)(1)
Min.
Max.
Test
current
at
IT (mA)
Stand-off
voltage
VWM
(Volts)
Maximum
reverse
leakage
at VWM
ID(3) (uA)
Maximum
peak
pulse
current
IPPM(2) (A)
Maximum
clamping
voltage
at IPPM
VC (Volts)
Maximum
temperature
coefficient
of VBR
(% /℃)
EC76P4KE51
45.9
56.1
1.0
41.3
1.0
5.4
73.5
0.102
EC76P4KE51A
48.5
53.6
1.0
43.6
1.0
5.7
70.1
0.102
EC76P4KE56
50.4
61.6
1.0
45.4
1.0
5.0
80.5
0.103
EC76P4KE56A
53.2
58.8
1.0
47.8
1.0
5.2
77.0
0.103
EC76P4KE62
55.8
68.2
1.0
50.2
1.0
4.5
89.0
0.104
EC76P4KE62A
58.9
65.1
1.0
53.0
1.0
4.7
85.0
0.104
EC76P4KE68
61.2
74.8
1.0
55.1
1.0
4.1
98.0
0.104
EC76P4KE68A
64.6
71.4
1.0
58.1
1.0
4.3
92.0
0.104
EC76P4KE75
67.5
82.5
1.0
60.7
1.0
3.7
108
0.105
EC76P4KE75A
71.3
78.8
1.0
64.1
1.0
3.9
103
0.105
EC76P4KE82
73.8
90.2
1.0
66.4
1.0
3.4
118
0.105
EC76P4KE82A
77.9
86.1
1.0
70.1
1.0
3.5
113
0.105
EC76P4KE91
81.9
100
1.0
73.7
1.0
3.1
131
0.106
EC76P4KE91A
86.5
95.5
1.0
77.8
1.0
3.2
125
0.106
EC76P4KE100
90.0
110
1.0
81.0
1.0
2.8
144
0.106
EC76P4KE100A
95.0
105
1.0
85.5
1.0
2.9
137
0.106
EC76P4KE110
99.0
121
1.0
89.2
1.0
2.5
158
0.107
EC76P4KE110A
105
116
1.0
94.0
1.0
2.6
152
0.107
EC76P4KE120
108
132
1.0
97.2
1.0
2.3
173
0.107
EC76P4KE120A
114
126
1.0
102
1.0
2.4
165
0.107
EC76P4KE130
117
143
1.0
105
1.0
2.1
187
0.107
EC76P4KE130A
124
137
1.0
111
1.0
2.2
179
0.107
EC76P4KE150
135
165
1.0
121
1.0
1.9
215
0.108
EC76P4KE150A
143
158
1.0
128
1.0
1.9
207
0.108
EC76P4KE160
144
176
1.0
130
1.0
1.7
230
0.108
EC76P4KE160A
152
168
1.0
136
1.0
1.8
219
0.108
EC76P4KE170
153
187
1.0
138
1.0
1.6
244
0.108
EC76P4KE170A
162
179
1.0
145
1.0
1.7
234
0.108
EC76P4KE180
162
198
1.0
146
1.0
1.6
258
0.108
EC76P4KE180A
171
189
1.0
154
1.0
1.6
246
0.108
EC76P4KE200
180
220
1.0
162
1.0
1.4
287
0.108
EC76P4KE200A
190
210
1.0
171
1.0
1.5
274
0.108
EC76P4KE220
198
242
1.0
175
1.0
1.2
344
0.108
EC76P4KE220A
209
231
1.0
185
1.0
1.2
328
0.108
EC76P4KE250
225
275
1.0
202
1.0
1.1
360
0.110
EC76P4KE250A
237
263
1.0
214
1.0
1.2
344
0.110
EC76P4KE300
270
330
1.0
243
1.0
0.93
430
0.110
EC76P4KE300A
285
315
1.0
256
1.0
1.0
414
0.110
EC76P4KE350
315
385
1.0
284
1.0
0.79
504
0.110
EC76P4KE350A
333
368
1.0
300
1.0
0.83
482
0.110
EC76P4KE400
360
440
1.0
324
1.0
0.70
574
0.110
EC76P4KE400A
380
420
1.0
342
1.0
0.73
548
0.110
E-CMOS Corp. (www.ecmos.com.tw)
Page 3 of 6
5A19N Rev.F001
EC76P4KEXXX
Peak Pulse 400W
Stand-off Voltage 6.8 to 550V
Breakdown
voltage
V (BR) (Volts)(1)
Device type
Min.
Test
current
at
IT (mA)
Stand-off
voltage
VWM
(Volts)
Maximum
reverse
leakage
at VWM
ID(3) (uA)
Maximum
peak
pulse
current
IPPM(2) (A)
Maximum
clamping
voltage
at IPPM
VC (Volts)
Maximum
temperature
coefficient
of VBR
(% /℃)
Max.
EC76P4KE480A
456
504
1.0
408
1.0
0.61
658
0.110
EC76P4KE510A
485
535
1.0
434
1.0
0.57
698
0.110
EC76P4KE530A
503.5
556.5
1.0
450
1.0
0.55
725
0.110
EC76P4KE540A
513
567
1.0
459
1.0
0.54
740
0.110
EC76P4KE550A
522.5
577.5
1.0
467
1.0
0.52
760
0.110
EC76P4KE480A
456
504
1.0
408
1.0
0.61
658
0.110
EC76P4KE510A
485
535
1.0
434
1.0
0.57
698
0.110
EC76P4KE530A
503.5
556.5
1.0
450
1.0
0.55
725
0.110
EC76P4KE540A
513
567
1.0
459
1.0
0.54
740
0.110
EC76P4KE550A
522.5
577.5
1.0
467
1.0
0.52
760
0.110
EC76P4KE480A
456
504
1.0
408
1.0
0.61
658
0.110
EC76P4KE510A
485
535
1.0
434
1.0
0.57
698
0.110
EC76P4KE530A
503.5
556.5
1.0
450
1.0
0.55
725
0.110
EC76P4KE540A
513
567
1.0
459
1.0
0.54
740
0.110
EC76P4KE550A
522.5
577.5
1.0
467
1.0
0.52
760
0.110
Notes: 1. V(BR) measured after IT applied for 300us square wave pulse or equivalent
2. Surge current waveform per Fig. 3 and derate per Fig. 2
3. For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled
4. All terms and symbols are consistent with ANSI/IEEE C62.35
5. For parts without A, the VBR is +10%
Typical Performance Curves
E-CMOS Corp. (www.ecmos.com.tw)
Page 4 of 6
5A19N Rev.F001
Peak Pulse 400W
Stand-off Voltage 6.8 to 550V
E-CMOS Corp. (www.ecmos.com.tw)
Page 5 of 6
EC76P4KEXXX
5A19N Rev.F001
EC76P4KEXXX
Peak Pulse 400W
Stand-off Voltage 6.8 to 550V
Order Information
EC76P4KE xxx C A
Stand off Voltage
5% Voltage Tolerance (without A, 5% Voltage tolerance)
Bi-directional (without C, Uni-direction)
Device
EC76P4KEXXXA
E-CMOS Corp. (www.ecmos.com.tw)
Package
DO-204AL(DO-41)
Net Weight
0.300g
Page 6 of 6
Carrier
Tape & Box
Quantity
3000pcs/reel
HSF Status
RoHS compliant
5A19N Rev.F001