APT20GT60AR
600V
30A
Thunderbolt IGBT
TO-3
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior
ruggedness and ultrafast switching speed.
• Low Forward Voltage Drop
• High Freq. Switching to 150KHz
• Low Tail Current
• Ultra Low Leakage Current
• Avalanche Rated
• RBSOA and SCSOA Rated
(TO-204AE)
C
G
• Hermetic Package
E
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
UNIT
APT20GT60AR
Parameter
Y
R
A
N
I
M
I
L
E
R
P
V CES
Collector-Emitter Voltage
600
VCGR
Collector-Gate Voltage (RGE = 20KW)
600
V EC
Emitter-Collector Voltage
15
VGE
Gate-Emitter Voltage
I C1
Continuous Collector Current @ TC = 25°C
30
I C2
Continuous Collector Current @ TC = 100°C
20
I CM
Pulsed Collector Current
I LM
RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125°C
40
EAS
Single Pulse Avalanche Energy
2
40
mJ
PD
Total Power Dissipation
140
Watts
TJ,TSTG
TL
Volts
±20
1
60
@ TC = 25°C
Amps
-55 to 150
Operating and Storage Junction Temperature Range
300
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
STATIC ELECTRICAL CHARACTERISTICS
600
RBVCES
Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA)
-15
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
I GES
(VCE = VGE, I C = 500µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C)
MAX
UNIT
3
4
5
Volts
1.6
2.0
2.5
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 150°C)
2.8
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
40
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 150°C)
1000
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
±100
µA
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
6-2000
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA, Tj = -55°C)
BVCES
TYP
Rev -
MIN
050-5969
Characteristic / Test Conditions
Symbol
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller") Charge
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
APT20GT60AR
3
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
MIN
Capacitance
VGE = 0V
TYP
110
VCE = 25V
f = 1 MHz
65
Gate Charge
VGE = 15V
95
I C = I C2
8
Resistive Switching (25°C)
10
VGE = 15V
34
VCC = 0.8VCES
I C = I C2
Y
R
A
N
I
M
I
L
E
R
P
15
Turn-off Delay Time
15
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
Fall Time
30
I C = I C2
Eoff
Turn-off Switching Energy
0.45
Ets
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
mJ
1.0
15
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
18
VGE = 15V
I C = I C2
R G = 10W
25
Ets
Total Switching Losses
TJ = +25°C
0.60
gfe
Forward Transconductance
VCE = 20V, I C = I C2
ns
160
Fall Time
tf
ns
190
0.55
td(off)
ns
125
RG = 10W
R G = 10W
tr
nC
115
TJ = +150°C
td(on)
pF
40
VCC = 0.5VCES
Turn-on Delay Time
Rise Time
UNIT
1100
Turn-on Switching Energy
Eon
MAX
mJ
4
S
THERMAL CHARACTERISTICS
050-5969
Rev -
6-2000
Symbol
Characteristic
RQJC
Junction to Case
RQJA
Junction to Ambient
MIN
TYP
MAX
UNIT
0.90
°C/W
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
IC = IC2, RGE = 25W, L = 200µH, Tj = 25°C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
80