http://www.fujielectric.com/products/semiconductor/ FGW50N60HD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Equivalent circuit Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC =25°C unless otherwise specified) Items Collector-Emitter Voltage Gate-Emitter Voltage Diode Pulsed Current Symbols VCES VGES I C@25 I C@100 I CP I F@25 I F@100 I FP Short Circuit Withstand Time t SC IGBT Max. Power Dissipation FWD Max. Power Dissipation Operating Junction Temperature Storage Temperature PD_IGBT PD_FWD Tj Tstg DC Collector Current Pulsed Collector Current Turn-Off Safe Operating Area Diode Forward Current Characteristics Units Remarks 600 V ±20 V 95 A TC =25°C,Tj =150°C 50 A TC =100°C,Tj =150°C 150 A Note *1 150 A VCE ≤600V,Tj ≤175°C 43 A 25 A 150 A Note *1 VCC ≤300V,VGE=12V 5 µs Tj ≤150°C 360 TC =25°C W 125 TC =25°C -40 ~ +175 °C -55 ~ +175 °C Collector Gate Emitter Note *1 : Pulse width limited by Tjmax. Electrical characteristics (at Tj = 25°C unless otherwise specified) Items Symbols Conditions Collector-Emitter Breakdown Voltage V(BR)CES IC = 250μA, VGE = 0V Tj =25°C Tj =175°C Zero Gate Voltage Collector Current ICES VCE = 600V, VGE = 0V Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage IGES VGE (th) VCE = 0V, VGE = ±20V VCE = +20V, IC = 50mA Collector-Emitter Saturation Voltage VCE (sat) VGE = +15V, IC = 50A Input Capacitance Output Capacitance Reverse Transfer Capacitance Cies Coes Cres Gate Charge QG Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy td(on) tr td(off) tf Eon Turn-Off Energy Eoff Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy td(on) tr td(off) tf Eon Turn-Off Energy Eoff VCE=25V VGE=0V f=1MHz VCC = 400V IC = 50A VGE = 15V Tj = 25°C VCC = 400V IC = 50A VGE = 15V RG = 10Ω L = 500μH Energy loss include “tail” and FWD reverse recovery. Tj = 175°C VCC = 400V IC = 50A VGE = 15V RG = 10Ω L = 500μH Energy loss include “tail” and FWD reverse recovery. 1 Tj =25°C Tj =175°C Characteristics min. typ. max. 600 250 10 200 4.0 5.0 6.0 1.50 1.95 1.80 4320 210 160 - 305 - - 35 75 310 60 1.4 - - 1.7 - - 40 85 335 72 2.4 - - 2.2 - Units V µA mA nA V V pF nC ns mJ ns mJ FGW50N60HD Discrete IGBT http://www.fujielectric.com/products/semiconductor/ FWD Characteristics Description Symbol Forward Voltage Drop VF Diode Reverse Recovery Time trr1 Diode Reverse Recovery Time trr2 Diode Reverse Recovery Charge Qrr Diode Reverse Recovery Time trr2 Diode Reverse Recovery Charge Qrr Conditions IF=25A VCC =30V,IF = 2.5A -di/dt=200A/μs VCC =400V IF=25A -diF /dt=200A/µs Tj =25°C VCC =400V IF=25A -diF/dt=200A/µs Tj =175°C Thermal resistance characteristics Items Symbols Conditions Thermal Resistance, Junction-Ambient Thermal Resistance, IGBT Junction to Case Thermal Resistance, FWD Junction to Case Rth(j-a) Rth(j-c)_IGBT Rth(j-c)_FWD - 2 Tj =25°C Tj =175°C Characteristics min. typ. max. 2.0 2.6 1.4 - Unit V V 25 33 ns 0.04 - μs - 0.08 - μC - 0.16 - μs - 0.75 - μC Characteristics min. typ. max. 50 0.417 1.191 Units °C/W FGW50N60HD Discrete IGBT http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) Graph.1 DC Collector Current vs T V ≥+15V, T ≤175ºC Graph.2 Collector Current vs. switching frequency V =+15V, T ≤175ºC, V =400V, D=0.5, R =10Ω, T =100ºC C GE j GE C G 120 140 120 100 80 Switching frequency fs [kHz] 100 Collector current IC [A] CC C Tj≤175℃ 60 40 80 60 40 20 20 0 0 25 50 75 100 125 150 175 0 20 40 60 80 100 Collector-Emitter corrent : ICE [A] Case Temperature [°C] Graph.3 Typical Output Characteristics (V -I ) T =25ºC CE Graph.4 Typical Output Characteristics (V -I ) T =175ºC C CE j C j 100 100 VGE=20V 12V 15V VGE=20V 8V 10V 80 15V 80 12V 10V 8V 60 IC [A] IC [A] 60 40 40 20 20 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 VCE [V] 2.0 2.5 3.0 3.5 4.0 VCE [V] Graph.6 Gate Threshold Voltage vs. T I =50mA, V =20V Graph.5 Typical Transfer Characteristics V =+15V j GE C 100 CE 8 7 Gate Threshold Voltage VGE(th) [V] 80 IC [A] 60 Tj=175℃ Tj=25℃ 40 20 max. 6 5 typ. 4 min. 3 2 1 0 0 0 2 4 6 8 10 -50 -25 0 25 50 Tj [℃] VGE [V] 3 75 100 125 150 175 FGW50N60HD Discrete IGBT http://www.fujielectric.com/products/semiconductor/ Graph.8 Typical Gate Charge V =400V,I =50A,T =25°C Graph.7 Typical Capacitance V =0V,f=1MHz,T =25°C GE CC j C j 20 4 10 Cies 15 VCC=400V 3 VGE [V] C [pF] 10 Coes 2 10 Cres 10 5 1 10 0 -2 -1 10 0 10 1 10 10 B 0 50 100 150 VCE [V] C j G CC 400 C 1000 td(off) Switching Times [nsec] td(off) 100 tf td(on) tr 10 tr tf 100 td(on) 10 1 1 0 20 40 60 80 100 0 10 Collector Current IC [A] C 40 50 60 G CC GE 30 Graph.12 Typical switching losses vs. R T =175°C,V =400V,I =50A,L=500µH V =15V Graph.11 Typical switching losses vs. I T =175°C,V =400V,L=500µH V =15V,R =10Ω j 20 Gate Resistor RG [Ω] j G CC C GE 8 8 Switching Energy Losses [mJ] Switching Times [nsec] 350 GE 1000 Switching Energy Losses [mJ] 300 G CC GE 250 Graph.10 Typical switching time vs. R T =175°C,V =400V,I =50A,L=500µH V =15V Graph.9 Typical switching time vs. I T =175°C,V =400V,L=500µH V =15V,R =10Ω j 200 QG [nC] 6 Eoff Eon 4 2 0 6 4 Eoff Eon 2 0 0 20 40 60 80 100 120 0 10 20 30 40 Gate Resistor RG [Ω] Collector Current IC [A] 4 50 60 FGW50N60HD Discrete IGBT http://www.fujielectric.com/products/semiconductor/ Graph.14 Typical reverse recovery characteristics vs. I T =175ºC, V =400V, L=500µH V =15V, R =10Ω Graph.13 FWD Forward voltage drop (V -I ) F F j CC GE 50 Tj=175℃ Reverse recovery Time [nsec] 40 Tj=25℃ IF [A] 30 20 10 G 250 2.5 200 2.0 150 1.5 Qrr 1.0 100 trr 0.5 50 0.0 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 10 20 VF [V] 50 Graph.16 Reverse biased Safe Operating Area T ≤175ºC, V =+15V/0V, R =10Ω F j CC GE 40 IF [A] Graph.15 Typical reverse recovery loss vs. I T =175ºC, V =400V, L=500µH V =15V, R =10Ω j 30 GE G G 350 300 250 Collector current IC [A] Reverse recovery loss [uJ] 300 200 150 100 200 100 50 0 0 0 10 20 30 40 50 0 200 400 600 Collector-Emitter voltage : VCE [V] IF [A] 5 800 Reverse Recovery Charge [uC] F FGW50N60HD Discrete IGBT http://www.fujielectric.com/products/semiconductor/ Graph.17 Transient thermal resistance of IGBT 101 Zth(j-c) [℃/W] 100 10-1 10-2 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 10-1 100 t [sec] Graph.18 Transient thermal resistance of FWD 101 Zth(j-c) [℃/W] 100 10-1 10-2 10-3 10-6 10-5 10-4 10-3 10-2 t [sec] 6 FGW50N60HD Discrete IGBT http://www.fujielectric.com/products/semiconductor/ Outline Drawings, mm Outview : TO-247 Package ① ② ③ CONNECTION ① GATE ② COLLECTOR ③ EMITTER ① ② DIMENSIONS ARE IN MILLIMETERS. ③ 7 FGW50N60HD Discrete IGBT http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7.Copyright ©1996-2011 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 8